JP6544171B2 - 表面処理状況モニタリング装置 - Google Patents

表面処理状況モニタリング装置 Download PDF

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Publication number
JP6544171B2
JP6544171B2 JP2015182433A JP2015182433A JP6544171B2 JP 6544171 B2 JP6544171 B2 JP 6544171B2 JP 2015182433 A JP2015182433 A JP 2015182433A JP 2015182433 A JP2015182433 A JP 2015182433A JP 6544171 B2 JP6544171 B2 JP 6544171B2
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light
measurement
surface treatment
size
spectrum
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Japanese (ja)
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JP2017058217A5 (enExample
JP2017058217A (ja
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塁 加藤
塁 加藤
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Shimadzu Corp
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Shimadzu Corp
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  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2015182433A 2015-09-16 2015-09-16 表面処理状況モニタリング装置 Expired - Fee Related JP6544171B2 (ja)

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JP2015182433A JP6544171B2 (ja) 2015-09-16 2015-09-16 表面処理状況モニタリング装置

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JP2015182433A JP6544171B2 (ja) 2015-09-16 2015-09-16 表面処理状況モニタリング装置

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JP2017058217A JP2017058217A (ja) 2017-03-23
JP2017058217A5 JP2017058217A5 (enExample) 2018-03-08
JP6544171B2 true JP6544171B2 (ja) 2019-07-17

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7103906B2 (ja) * 2018-09-28 2022-07-20 株式会社ディスコ 厚み計測装置
KR102659131B1 (ko) * 2024-02-01 2024-04-23 ㈜넥센서 간섭계와 fpm을 이용한 미세홈 측정시스템
CN119618063B (zh) * 2024-12-18 2025-09-12 佛山易事达电容材料有限公司 一种基于光学测量的金属薄膜尺寸测量方法及系统

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JP4460659B2 (ja) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
JP3946470B2 (ja) * 2001-03-12 2007-07-18 株式会社デンソー 半導体層の膜厚測定方法及び半導体基板の製造方法
JP6107353B2 (ja) * 2013-04-12 2017-04-05 株式会社島津製作所 表面処理状況モニタリング装置

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