JP6540022B2 - 載置台及びプラズマ処理装置 - Google Patents

載置台及びプラズマ処理装置 Download PDF

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Publication number
JP6540022B2
JP6540022B2 JP2014265670A JP2014265670A JP6540022B2 JP 6540022 B2 JP6540022 B2 JP 6540022B2 JP 2014265670 A JP2014265670 A JP 2014265670A JP 2014265670 A JP2014265670 A JP 2014265670A JP 6540022 B2 JP6540022 B2 JP 6540022B2
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Japan
Prior art keywords
mounting table
main body
insulating member
peripheral surface
table main
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JP2014265670A
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English (en)
Japanese (ja)
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JP2016127090A5 (zh
JP2016127090A (ja
Inventor
雅人 南
雅人 南
芳彦 佐々木
芳彦 佐々木
篤 邊見
篤 邊見
均 齊藤
均 齊藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014265670A priority Critical patent/JP6540022B2/ja
Priority to KR1020150178938A priority patent/KR101850193B1/ko
Priority to TW104143399A priority patent/TWI692796B/zh
Priority to CN201510993810.6A priority patent/CN105742146B/zh
Publication of JP2016127090A publication Critical patent/JP2016127090A/ja
Publication of JP2016127090A5 publication Critical patent/JP2016127090A5/ja
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Publication of JP6540022B2 publication Critical patent/JP6540022B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014265670A 2014-12-26 2014-12-26 載置台及びプラズマ処理装置 Active JP6540022B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014265670A JP6540022B2 (ja) 2014-12-26 2014-12-26 載置台及びプラズマ処理装置
KR1020150178938A KR101850193B1 (ko) 2014-12-26 2015-12-15 탑재대 및 플라즈마 처리 장치
TW104143399A TWI692796B (zh) 2014-12-26 2015-12-23 載置台及電漿處理裝置
CN201510993810.6A CN105742146B (zh) 2014-12-26 2015-12-25 载置台和等离子体处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014265670A JP6540022B2 (ja) 2014-12-26 2014-12-26 載置台及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2016127090A JP2016127090A (ja) 2016-07-11
JP2016127090A5 JP2016127090A5 (zh) 2018-02-01
JP6540022B2 true JP6540022B2 (ja) 2019-07-10

Family

ID=56296091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014265670A Active JP6540022B2 (ja) 2014-12-26 2014-12-26 載置台及びプラズマ処理装置

Country Status (4)

Country Link
JP (1) JP6540022B2 (zh)
KR (1) KR101850193B1 (zh)
CN (1) CN105742146B (zh)
TW (1) TWI692796B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206385A (zh) * 2016-09-27 2016-12-07 上海华力微电子有限公司 一种降低腔体内金属污染含量的多晶硅刻蚀腔及方法
JP6794937B2 (ja) * 2017-06-22 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
JP7090465B2 (ja) * 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
JP7401266B2 (ja) * 2018-12-27 2023-12-19 東京エレクトロン株式会社 基板載置台、及び、基板処理装置
JP7274347B2 (ja) * 2019-05-21 2023-05-16 東京エレクトロン株式会社 プラズマ処理装置
KR20210056646A (ko) 2019-11-11 2021-05-20 삼성전자주식회사 플라즈마 처리 장비
CN111996590B (zh) * 2020-08-14 2021-10-15 北京北方华创微电子装备有限公司 一种工艺腔室
TW202232564A (zh) * 2020-10-15 2022-08-16 日商東京威力科創股份有限公司 緊固構造、電漿處理裝置以及緊固方法
CN113192876A (zh) * 2021-04-30 2021-07-30 北京北方华创微电子装备有限公司 半导体设备及其承载装置
JP2023067033A (ja) 2021-10-29 2023-05-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957719B2 (ja) * 2004-02-27 2007-08-15 川崎マイクロエレクトロニクス株式会社 プラズマ処理装置およびプラズマ処理方法
JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP2006016126A (ja) 2004-06-30 2006-01-19 Hitachi Building Systems Co Ltd エレベーターの制御装置
JP4992630B2 (ja) * 2007-09-19 2012-08-08 東京エレクトロン株式会社 載置台構造及び処理装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
WO2010062345A2 (en) * 2008-10-31 2010-06-03 Lam Research Corporation Lower electrode assembly of plasma processing chamber
JP5948026B2 (ja) * 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
JP6034156B2 (ja) * 2011-12-05 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5893516B2 (ja) * 2012-06-22 2016-03-23 東京エレクトロン株式会社 被処理体の処理装置及び被処理体の載置台
CN103715049B (zh) * 2012-09-29 2016-05-04 中微半导体设备(上海)有限公司 等离子体处理装置及调节基片边缘区域制程速率的方法
CN103794538B (zh) * 2012-10-31 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置
CN203503602U (zh) * 2013-10-18 2014-03-26 中芯国际集成电路制造(北京)有限公司 一种蚀刻结构

Also Published As

Publication number Publication date
TWI692796B (zh) 2020-05-01
KR20160079662A (ko) 2016-07-06
CN105742146A (zh) 2016-07-06
CN105742146B (zh) 2018-01-05
KR101850193B1 (ko) 2018-04-18
JP2016127090A (ja) 2016-07-11
TW201637065A (zh) 2016-10-16

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