JP6538974B2 - 円筒異方性熱伝導率を備える複合デバイス - Google Patents

円筒異方性熱伝導率を備える複合デバイス Download PDF

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Publication number
JP6538974B2
JP6538974B2 JP2018520156A JP2018520156A JP6538974B2 JP 6538974 B2 JP6538974 B2 JP 6538974B2 JP 2018520156 A JP2018520156 A JP 2018520156A JP 2018520156 A JP2018520156 A JP 2018520156A JP 6538974 B2 JP6538974 B2 JP 6538974B2
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base support
thermally conductive
thermal conductivity
heater
arcuate members
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Japanese (ja)
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JP2018533216A5 (enExample
JP2018533216A (ja
Inventor
ザング、サンホン
プタシエンスキ、ケビン
スミス、ケビン、アール
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ワットロー・エレクトリック・マニュファクチャリング・カンパニー
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/267—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an organic material, e.g. plastic

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
JP2018520156A 2015-10-19 2016-10-12 円筒異方性熱伝導率を備える複合デバイス Active JP6538974B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/886,783 2015-10-19
US14/886,783 US10154542B2 (en) 2015-10-19 2015-10-19 Composite device with cylindrical anisotropic thermal conductivity
PCT/US2016/056547 WO2017069977A1 (en) 2015-10-19 2016-10-12 Composite device with cylindrical anisotropic thermal conductivity

Publications (3)

Publication Number Publication Date
JP2018533216A JP2018533216A (ja) 2018-11-08
JP2018533216A5 JP2018533216A5 (enExample) 2018-12-20
JP6538974B2 true JP6538974B2 (ja) 2019-07-03

Family

ID=57227091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018520156A Active JP6538974B2 (ja) 2015-10-19 2016-10-12 円筒異方性熱伝導率を備える複合デバイス

Country Status (7)

Country Link
US (1) US10154542B2 (enExample)
EP (1) EP3365913B1 (enExample)
JP (1) JP6538974B2 (enExample)
KR (1) KR101975316B1 (enExample)
CN (1) CN108701628B (enExample)
TW (1) TWI654699B (enExample)
WO (1) WO2017069977A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020040725A1 (en) * 2018-08-20 2020-02-27 Comet Ag Multi-stack cooling structure for radiofrequency component
US11515190B2 (en) 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder
US12046502B2 (en) * 2019-09-09 2024-07-23 Watlow Electric Manufacturing Company Electrostatic puck and method of manufacture
KR102144079B1 (ko) * 2020-04-03 2020-08-13 (주)유진기업 Psc구조물에 긴장재를 삽입하는 방법 및 이를 이용하여 제작된 psc구조물
DE102020123546A1 (de) 2020-09-09 2022-03-10 Aixtron Se CVD-Reaktor mit einer Kühlfläche mit bereichsweise vergrößerter Emissivität
CN112382589A (zh) * 2020-11-10 2021-02-19 泉芯集成电路制造(济南)有限公司 一种去除芯片表面氧化硅的装置及方法
JP2023180522A (ja) * 2022-06-09 2023-12-21 新光電気工業株式会社 基板固定装置及び基板固定装置の製造方法
JP2023183628A (ja) * 2022-06-16 2023-12-28 新光電気工業株式会社 基板固定装置及び基板固定装置の製造方法
JP2024000905A (ja) * 2022-06-21 2024-01-09 新光電気工業株式会社 基板固定装置及び基板固定装置の製造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536918A (en) 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
US5302851A (en) * 1991-12-19 1994-04-12 International Business Machines Corporation Circuit assembly with polyimide insulator
US6410172B1 (en) 1999-11-23 2002-06-25 Advanced Ceramics Corporation Articles coated with aluminum nitride by chemical vapor deposition
US20040149718A1 (en) 2000-04-07 2004-08-05 Yasutaka Ito Ceramic heater
CN1299322C (zh) 2000-11-16 2007-02-07 麦特逊技术股份有限公司 电阻加热一热处理系统用的装置和方法
WO2002089531A1 (en) 2001-04-30 2002-11-07 Lam Research, Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6529686B2 (en) 2001-06-06 2003-03-04 Fsi International, Inc. Heating member for combination heating and chilling apparatus, and methods
KR100443122B1 (ko) 2001-10-19 2004-08-04 삼성전자주식회사 반도체 소자 제조장치용 히터 어셈블리
US20030089457A1 (en) 2001-11-13 2003-05-15 Applied Materials, Inc. Apparatus for controlling a thermal conductivity profile for a pedestal in a semiconductor wafer processing chamber
JP2006517740A (ja) 2003-01-17 2006-07-27 ゼネラル・エレクトリック・カンパニイ ウェーハ加工装置及びその製造方法
WO2005008749A1 (ja) 2003-07-16 2005-01-27 Ibiden Co., Ltd. セラミック接合体、セラミック接合体の製造方法、セラミック温調器およびセラミック温調ユニット
US7196295B2 (en) 2003-11-21 2007-03-27 Watlow Electric Manufacturing Company Two-wire layered heater system
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US20060096946A1 (en) 2004-11-10 2006-05-11 General Electric Company Encapsulated wafer processing device and process for making thereof
JP4749072B2 (ja) * 2005-07-26 2011-08-17 京セラ株式会社 ウェハ保持体
JP2007134088A (ja) 2005-11-08 2007-05-31 Shin Etsu Chem Co Ltd セラミックスヒーターおよびセラミックスヒーターの製造方法
US7901509B2 (en) 2006-09-19 2011-03-08 Momentive Performance Materials Inc. Heating apparatus with enhanced thermal uniformity and method for making thereof
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7425689B2 (en) * 2006-09-27 2008-09-16 Tokyo Electron Limited Inline physical shape profiling for predictive temperature correction during baking of wafers in a semiconductor photolithography process
JP5762798B2 (ja) 2011-03-31 2015-08-12 東京エレクトロン株式会社 天井電極板及び基板処理載置
JP6077301B2 (ja) * 2012-12-28 2017-02-08 日本特殊陶業株式会社 静電チャック
TWI609991B (zh) 2013-06-05 2018-01-01 維克儀器公司 具有熱一致性改善特色的晶圓舟盒
WO2015002326A1 (en) * 2013-07-05 2015-01-08 Nitto Denko Corporation Photocatalyst sheet
KR20180110213A (ko) * 2013-08-06 2018-10-08 어플라이드 머티어리얼스, 인코포레이티드 국부적으로 가열되는 다-구역 기판 지지부
US20150292815A1 (en) * 2014-04-10 2015-10-15 Applied Materials, Inc. Susceptor with radiation source compensation
TWI734668B (zh) * 2014-06-23 2021-08-01 美商應用材料股份有限公司 在ｅｐｉ腔室中的基材熱控制
KR20160015510A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법
US9872341B2 (en) * 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment

Also Published As

Publication number Publication date
KR101975316B1 (ko) 2019-05-07
CN108701628B (zh) 2019-10-08
US10154542B2 (en) 2018-12-11
WO2017069977A1 (en) 2017-04-27
CN108701628A (zh) 2018-10-23
EP3365913A1 (en) 2018-08-29
KR20180071307A (ko) 2018-06-27
EP3365913B1 (en) 2021-06-16
JP2018533216A (ja) 2018-11-08
TW201719792A (zh) 2017-06-01
TWI654699B (zh) 2019-03-21
US20170111958A1 (en) 2017-04-20

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