JP6538974B2 - 円筒異方性熱伝導率を備える複合デバイス - Google Patents
円筒異方性熱伝導率を備える複合デバイス Download PDFInfo
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- JP6538974B2 JP6538974B2 JP2018520156A JP2018520156A JP6538974B2 JP 6538974 B2 JP6538974 B2 JP 6538974B2 JP 2018520156 A JP2018520156 A JP 2018520156A JP 2018520156 A JP2018520156 A JP 2018520156A JP 6538974 B2 JP6538974 B2 JP 6538974B2
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- 239000002131 composite material Substances 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 24
- 239000000835 fiber Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 229910002804 graphite Inorganic materials 0.000 claims description 18
- 239000010439 graphite Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000003949 imides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 4
- UGQZLDXDWSPAOM-UHFFFAOYSA-N pyrrolo[3,4-f]isoindole-1,3,5,7-tetrone Chemical compound C1=C2C(=O)NC(=O)C2=CC2=C1C(=O)NC2=O UGQZLDXDWSPAOM-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010284 wire arc spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/267—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an organic material, e.g. plastic
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (16)
- 処理チャンバ内で基板を支持し、前記基板の表面温度を調節する装置であって、
前記基板を支持するために適用される表面を含むベース支持部と、
前記ベース支持部に近接して配置され、前記基板を加熱するためのヒータと、
を具備し、
前記ベース支持部は、マトリックス内に埋め込まれた複数の熱伝導性弧状部材を含む複合材で作られており、前記複数の熱伝導性弧状部材は、同心状に配置され、前記ベース支持部の周方向(φ)における熱伝導率が前記ベース支持部の半径方向(ρ)における熱伝導率及び軸方向(z)における熱伝導率よりも高くなるように、及び、前記ヒータからの熱が前記ベース支持部の前記周方向にそって均等に分布するように、半径方向の間隔で所定の間隔を定め、
前記複数の熱伝導性弧状部材は、前記ヒータの電気回路から分離され、前記ヒータからの熱伝導によって加熱される、
装置。 - 前記複数の熱伝導性弧状部材は、連続するリングを定める、請求項1の装置。
- 前記複数の熱伝導性弧状部材は、ゾーン内に配置された対称的なセグメントを定める、請求項1の装置。
- 前記複数の熱伝導性弧状部材は、異なる長さを定める、請求項1の装置。
- 前記複数の熱伝導性弧状部材は、異なる材料を定める、請求項1の装置。
- 前記複数の熱伝導性弧状部材のうちの少なくとも1つは、変化する幅を定める、請求項1の装置。
- 前記複数の熱伝導性弧状部材のうちの少なくとも1つは、変化するトレース形状を定める、請求項1の装置。
- 前記マトリックスは、ポリイミド材である、請求項1の装置。
- 前記ポリイミド材は、ポリ−オキシジフェニレン−ピロメリットイミド材である、請求項8の装置。
- 前記熱伝導性弧状部材は、グラファイトファイバーである、請求項1の装置。
- 前記半径方向及び前記軸方向の前記ベース支持部の前記熱伝導率は、前記ベース支持部の約10重量%が前記グラファイトファイバーを含む場合に、少なくとも0.4W/mKである、請求項10の装置。
- 前記半径方向及び前記軸方向の前記ベース支持部の前記熱伝導率は、前記ベース支持部の約88重量%が前記グラファイトファイバーを含む場合に、6.0W/mK未満である、請求項10の装置。
- 前記ベース支持部の約8重量%が前記グラファイトファイバーを含む場合、前記ベース支持部の前記周方向における熱伝導率は、少なくとも80W/mKである、請求項10の装置。
- 前記ベース支持部の約90重量%が前記グラファイトファイバーを含む場合、前記ベース支持部の前記周方向における熱伝導率は、900W/mK未満である、請求項10の装置。
- 前記ヒータは、層状ヒータである、請求項1の装置。
- ターゲット部分に熱を提供する方法であって、
マトリックス内に埋め込まれた複数の熱伝導性弧状部材を含む複合材で作られているベース支持部を提供し、前記複数の熱伝導性弧状部材は、同心状に配置され、前記ベース支持部の半径方向(ρ)の間隔で所定の間隔を定める、ことと、
隣接する構成要素を介して前記ベース支持部に熱を加えることと、
を具備し、
前記ベース支持部の周方向(φ)における熱伝導率は、前記ベース支持部の前記半径方向(ρ)における熱伝導率及び前記ベース支持部の軸方向(z)における熱伝導率よりも高く、前記ベース支持部へ加えられる前記熱は、前記ベース支持部の前記周方向にそって均等に分布し、
前記複数の熱伝導性弧状部材は、ヒータの電気回路から分離され、前記ヒータからの熱伝導によって加熱される、
方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/886,783 | 2015-10-19 | ||
US14/886,783 US10154542B2 (en) | 2015-10-19 | 2015-10-19 | Composite device with cylindrical anisotropic thermal conductivity |
PCT/US2016/056547 WO2017069977A1 (en) | 2015-10-19 | 2016-10-12 | Composite device with cylindrical anisotropic thermal conductivity |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018533216A JP2018533216A (ja) | 2018-11-08 |
JP2018533216A5 JP2018533216A5 (ja) | 2018-12-20 |
JP6538974B2 true JP6538974B2 (ja) | 2019-07-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018520156A Active JP6538974B2 (ja) | 2015-10-19 | 2016-10-12 | 円筒異方性熱伝導率を備える複合デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US10154542B2 (ja) |
EP (1) | EP3365913B1 (ja) |
JP (1) | JP6538974B2 (ja) |
KR (1) | KR101975316B1 (ja) |
CN (1) | CN108701628B (ja) |
TW (1) | TWI654699B (ja) |
WO (1) | WO2017069977A1 (ja) |
Families Citing this family (5)
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WO2020040725A1 (en) * | 2018-08-20 | 2020-02-27 | Comet Ag | Multi-stack cooling structure for radiofrequency component |
US11515190B2 (en) | 2019-08-27 | 2022-11-29 | Watlow Electric Manufacturing Company | Thermal diffuser for a semiconductor wafer holder |
KR102144079B1 (ko) * | 2020-04-03 | 2020-08-13 | (주)유진기업 | Psc구조물에 긴장재를 삽입하는 방법 및 이를 이용하여 제작된 psc구조물 |
DE102020123546A1 (de) | 2020-09-09 | 2022-03-10 | Aixtron Se | CVD-Reaktor mit einer Kühlfläche mit bereichsweise vergrößerter Emissivität |
CN112382589A (zh) * | 2020-11-10 | 2021-02-19 | 泉芯集成电路制造(济南)有限公司 | 一种去除芯片表面氧化硅的装置及方法 |
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-
2015
- 2015-10-19 US US14/886,783 patent/US10154542B2/en active Active
-
2016
- 2016-10-12 JP JP2018520156A patent/JP6538974B2/ja active Active
- 2016-10-12 EP EP16790781.5A patent/EP3365913B1/en active Active
- 2016-10-12 CN CN201680072098.9A patent/CN108701628B/zh active Active
- 2016-10-12 WO PCT/US2016/056547 patent/WO2017069977A1/en active Application Filing
- 2016-10-12 KR KR1020187013853A patent/KR101975316B1/ko active IP Right Grant
- 2016-10-18 TW TW105133513A patent/TWI654699B/zh active
Also Published As
Publication number | Publication date |
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KR20180071307A (ko) | 2018-06-27 |
CN108701628B (zh) | 2019-10-08 |
JP2018533216A (ja) | 2018-11-08 |
TW201719792A (zh) | 2017-06-01 |
CN108701628A (zh) | 2018-10-23 |
KR101975316B1 (ko) | 2019-05-07 |
TWI654699B (zh) | 2019-03-21 |
WO2017069977A1 (en) | 2017-04-27 |
US20170111958A1 (en) | 2017-04-20 |
EP3365913A1 (en) | 2018-08-29 |
EP3365913B1 (en) | 2021-06-16 |
US10154542B2 (en) | 2018-12-11 |
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