JP6535271B2 - 放射線検出器、及び放射線検出器の製造方法 - Google Patents
放射線検出器、及び放射線検出器の製造方法 Download PDFInfo
- Publication number
- JP6535271B2 JP6535271B2 JP2015219211A JP2015219211A JP6535271B2 JP 6535271 B2 JP6535271 B2 JP 6535271B2 JP 2015219211 A JP2015219211 A JP 2015219211A JP 2015219211 A JP2015219211 A JP 2015219211A JP 6535271 B2 JP6535271 B2 JP 6535271B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- layer
- radiation detector
- perovskite structure
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005855 radiation Effects 0.000 title claims description 194
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000002245 particle Substances 0.000 claims description 158
- 239000004065 semiconductor Substances 0.000 claims description 93
- 238000010521 absorption reaction Methods 0.000 claims description 78
- 229920005989 resin Polymers 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 46
- 239000011230 binding agent Substances 0.000 claims description 38
- 239000003960 organic solvent Substances 0.000 claims description 21
- 230000005525 hole transport Effects 0.000 claims description 16
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 165
- 239000000463 material Substances 0.000 description 30
- 238000002156 mixing Methods 0.000 description 17
- 230000007423 decrease Effects 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- -1 Methylammonium lead halide Chemical class 0.000 description 11
- 229910000480 nickel oxide Inorganic materials 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- BQVVSSAWECGTRN-UHFFFAOYSA-L copper;dithiocyanate Chemical compound [Cu+2].[S-]C#N.[S-]C#N BQVVSSAWECGTRN-UHFFFAOYSA-L 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2018—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte characterised by the ionic charge transport species, e.g. redox shuttles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/36—Devices specially adapted for detecting X-ray radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
図1に示されるように、放射線検出器1Aは、パネル(基板)10と、緻密層(半導体電荷収集層)2と、多孔質層(半導体電荷収集層)3と、放射線吸収層4と、正孔輸送層5と、電圧印加電極6と、を備えている。放射線検出器1Aでは、パネル10の一方の側の表面に、緻密層2、多孔質層3、放射線吸収層4、正孔輸送層5及び電圧印加電極6がこの順序で積層されている。放射線検出器1Aは、例えばX線透過画像を形成するために、放射線としてX線を検出する固体撮像装置である。
図3に示されるように、放射線検出器1Bは、放射線吸収層4の構成において、上述した放射線検出器1Aと相違している。放射線検出器1Bでは、放射線吸収層4は、ペロブスカイト構造体粒子4p及びバインダ樹脂4rに加えて、ペロブスカイト構造体粒子4p以外の無機半導体粒子4sを更に含んでいる。無機半導体粒子4sは、n型の半導体材料からなる。つまり、無機半導体粒子4sの導電型は、緻密層2及び多孔質層3の導電型と同じである。n型の半導体材料としては、チタン、ケイ素、亜鉛、ニオブ、スズ、アルミニウム等の酸化物、それらの硫化物、それらのハロゲン化物等が好適である。無機半導体粒子4sは、X線の吸収によって放射線吸収層4において生じた電荷の移動度を増大させる。
図4に示されるように、放射線検出器1Cは、放射線吸収層4の構成において、上述した放射線検出器1Aと相違している。放射線検出器1Cでは、放射線吸収層4は、ペロブスカイト構造体粒子4p及びバインダ樹脂4rに加えて無機半導体粒子4sを更に含んでいる。無機半導体粒子4sは、n型の半導体材料からなる。つまり、無機半導体粒子4sの導電型は、緻密層2及び多孔質層3の導電型と同じである。n型の半導体材料としては、チタン、ケイ素、亜鉛、ニオブ、スズ、アルミニウム等の酸化物、それらの硫化物、それらのハロゲン化物等が好適である。無機半導体粒子4sは、X線の吸収によって放射線吸収層4において生じた電荷の移動度を増大させる。
Claims (8)
- 電荷収集電極を有する基板と、
前記基板に対して一方の側に配置され、ペロブスカイト構造体粒子及びバインダ樹脂を含む放射線吸収層と、
前記放射線吸収層に対して前記一方の側に配置され、前記電荷収集電極との間に電位差が生じるようにバイアス電圧が印加される電圧印加電極と、を備える、放射線検出器。 - 前記放射線吸収層は、前記ペロブスカイト構造体粒子以外の無機半導体粒子を更に含む、請求項1記載の放射線検出器。
- 前記ペロブスカイト構造体粒子の平均粒径は、前記無機半導体粒子の平均粒径よりも大きい、請求項2記載の放射線検出器。
- 前記基板と前記放射線吸収層との間に配置された半導体電荷収集層を更に備える、請求項2又は3記載の放射線検出器。
- 前記無機半導体粒子の導電型と前記半導体電荷収集層の導電型とは、同じである、請求項4記載の放射線検出器。
- 前記放射線吸収層と前記電圧印加電極との間に配置された正孔輸送層を更に備える、請求項1〜5のいずれか一項記載の放射線検出器。
- ペロブスカイト構造体粒子、バインダ樹脂及び有機溶媒を含む塗布液を調製する第1工程と、
前記第1工程の後に、前記塗布液を用いたスクリーン印刷によって、電荷収集電極を有する基板に対して一方の側に、前記ペロブスカイト構造体粒子及び前記バインダ樹脂を含む放射線吸収層を形成する第2工程と、
前記第2工程の後に、前記放射線吸収層に対して前記一方の側に、前記電荷収集電極との間に電位差が生じるようにバイアス電圧が印加される電圧印加電極を形成する第3工程と、を含む、放射線検出器の製造方法。 - 前記第1工程の前に、ペロブスカイト構造体結晶ブロックを粉砕して前記ペロブスカイト構造体粒子を得る工程を更に含む、請求項7記載の放射線検出器の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015219211A JP6535271B2 (ja) | 2015-11-09 | 2015-11-09 | 放射線検出器、及び放射線検出器の製造方法 |
PCT/JP2016/082051 WO2017082081A1 (ja) | 2015-11-09 | 2016-10-28 | 放射線検出器、及び放射線検出器の製造方法 |
US15/773,618 US10816681B2 (en) | 2015-11-09 | 2016-10-28 | Radiation detector and manufacturing method for radiation detector |
KR1020187014557A KR102480425B1 (ko) | 2015-11-09 | 2016-10-28 | 방사선 검출기, 및 방사선 검출기의 제조 방법 |
EP16864044.9A EP3376260B1 (en) | 2015-11-09 | 2016-10-28 | Radiation detector and manufacturing method for radiation detector |
CN201680065192.1A CN108351428B (zh) | 2015-11-09 | 2016-10-28 | 放射线检测器和放射线检测器的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015219211A JP6535271B2 (ja) | 2015-11-09 | 2015-11-09 | 放射線検出器、及び放射線検出器の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017090186A JP2017090186A (ja) | 2017-05-25 |
JP6535271B2 true JP6535271B2 (ja) | 2019-06-26 |
Family
ID=58696117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015219211A Active JP6535271B2 (ja) | 2015-11-09 | 2015-11-09 | 放射線検出器、及び放射線検出器の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10816681B2 (ja) |
EP (1) | EP3376260B1 (ja) |
JP (1) | JP6535271B2 (ja) |
KR (1) | KR102480425B1 (ja) |
CN (1) | CN108351428B (ja) |
WO (1) | WO2017082081A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109285846B (zh) * | 2017-07-20 | 2023-10-13 | 松下知识产权经营株式会社 | 光传感器及使用它的光检测装置 |
EP3474339A1 (en) | 2017-10-20 | 2019-04-24 | Siemens Healthcare GmbH | X-ray image sensor with adhesion promotive interlayer and soft-sintered perovskite active layer |
CN108318907B (zh) * | 2018-02-01 | 2019-10-01 | 北京京东方光电科技有限公司 | X射线探测面板及其制造方法和x射线探测装置 |
DE112019003191T5 (de) | 2018-06-26 | 2021-04-29 | Hamamatsu Photonics K.K. | Strahlungsdetektor und Verfahren zum Herstellen von Strahlungsdetektor |
CN109206449B (zh) * | 2018-08-01 | 2020-05-15 | 南京航空航天大学 | 一种有机-无机钙钛矿晶体材料及其制备方法与应用 |
EP3863054A1 (de) | 2020-02-04 | 2021-08-11 | Siemens Healthcare GmbH | Multiple spektrale detektoren mittels strukturierter perowskite |
EP3863059A1 (de) * | 2020-02-04 | 2021-08-11 | Siemens Healthcare GmbH | Perowskit-basierte detektoren mit erhöhter adhäsion |
CN111286252A (zh) * | 2020-03-09 | 2020-06-16 | 长沙而道新能源科技有限公司 | 一种抗辐射防腐涂料及其制备方法 |
EP3916819A1 (en) * | 2020-05-29 | 2021-12-01 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO | Perovskite layer |
JP2023127003A (ja) * | 2020-08-06 | 2023-09-13 | パナソニックIpマネジメント株式会社 | 電離放射線変換デバイスおよび電離放射線の検出方法 |
KR102474979B1 (ko) * | 2021-01-12 | 2022-12-06 | 주식회사 파프리카랩 | 피부 부착형 방사선 측정 장치를 이용한 방사선 피폭 모니터링 시스템 |
CN113035900B (zh) * | 2021-02-26 | 2023-02-10 | 深圳先进技术研究院 | 一种直接型电磁辐射探测器及制备方法 |
EP4068363B1 (en) | 2021-03-30 | 2023-06-07 | Siemens Healthcare GmbH | Radiation detector with butted absorber tiles without dead areas |
CN113970779A (zh) * | 2021-10-12 | 2022-01-25 | 华北电力大学 | 一种钙钛矿填充微孔面板形成的微结构闪烁屏及制备方法 |
EP4180845A1 (en) | 2021-11-11 | 2023-05-17 | Siemens Healthcare GmbH | Radiation detector with laser cut absorber tiles |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3669860B2 (ja) * | 1999-03-10 | 2005-07-13 | Tdk株式会社 | 積層薄膜 |
JP3779604B2 (ja) | 2001-01-15 | 2006-05-31 | 独立行政法人科学技術振興機構 | 放射線検出装置 |
JP3714918B2 (ja) | 2001-07-31 | 2005-11-09 | 独立行政法人科学技術振興機構 | 放射線検出装置 |
JP4269859B2 (ja) * | 2003-09-10 | 2009-05-27 | 株式会社島津製作所 | 放射線検出器 |
CN102888652B (zh) * | 2004-11-08 | 2016-09-21 | 东北泰克诺亚奇股份有限公司 | 含Pr的闪烁体用单晶及其制造方法和放射线检测器以及检查装置 |
WO2006068130A1 (ja) * | 2004-12-21 | 2006-06-29 | Hitachi Metals, Ltd. | 蛍光材料およびその製造方法、蛍光材料を用いた放射線検出器、並びにx線ct装置 |
JPWO2007096967A1 (ja) * | 2006-02-23 | 2009-07-09 | 株式会社島津製作所 | 放射線検出器 |
JP2008039548A (ja) * | 2006-08-04 | 2008-02-21 | Ohyo Koken Kogyo Co Ltd | シンチレーション検出器 |
JP5521412B2 (ja) * | 2008-07-31 | 2014-06-11 | 日立金属株式会社 | 蛍光材料およびそれを用いたシンチレータ並びに放射線検出器 |
JP2011054638A (ja) * | 2009-08-31 | 2011-03-17 | Fujifilm Corp | 光導電層の製造方法 |
JP6066608B2 (ja) * | 2011-07-27 | 2017-01-25 | キヤノン株式会社 | 相分離構造を有するシンチレータおよびそれを用いた放射線検出器 |
US9812660B2 (en) * | 2013-12-19 | 2017-11-07 | Nutech Ventures | Method for single crystal growth of photovoltaic perovskite material and devices |
DE102015225145A1 (de) * | 2015-12-14 | 2017-06-14 | Siemens Healthcare Gmbh | Perowskitpartikel für die Herstellung von Röntgendetektoren mittels Abscheidung aus der Trockenphase |
DE102016205818A1 (de) * | 2016-04-07 | 2017-10-12 | Siemens Healthcare Gmbh | Vorrichtung und Verfahren zum Detektieren von Röntgenstrahlung |
-
2015
- 2015-11-09 JP JP2015219211A patent/JP6535271B2/ja active Active
-
2016
- 2016-10-28 US US15/773,618 patent/US10816681B2/en active Active
- 2016-10-28 KR KR1020187014557A patent/KR102480425B1/ko active IP Right Grant
- 2016-10-28 EP EP16864044.9A patent/EP3376260B1/en active Active
- 2016-10-28 CN CN201680065192.1A patent/CN108351428B/zh active Active
- 2016-10-28 WO PCT/JP2016/082051 patent/WO2017082081A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR102480425B1 (ko) | 2022-12-23 |
KR20180081742A (ko) | 2018-07-17 |
WO2017082081A1 (ja) | 2017-05-18 |
CN108351428B (zh) | 2021-08-17 |
US20200257006A1 (en) | 2020-08-13 |
JP2017090186A (ja) | 2017-05-25 |
US10816681B2 (en) | 2020-10-27 |
EP3376260A1 (en) | 2018-09-19 |
EP3376260B1 (en) | 2020-06-03 |
CN108351428A (zh) | 2018-07-31 |
EP3376260A4 (en) | 2019-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6535271B2 (ja) | 放射線検出器、及び放射線検出器の製造方法 | |
Mescher et al. | Flexible inkjet-printed triple cation perovskite X-ray detectors | |
CN102401906B (zh) | 辐射探测器及其成像装置、电极结构和获取图像的方法 | |
US8735839B2 (en) | Pastes for photoelectric conversion layers of X-ray detectors, X-ray detectors and methods of manufacturing the same | |
US7122803B2 (en) | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging | |
US7233005B2 (en) | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging | |
US7304308B2 (en) | Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging | |
Li et al. | Evaporated perovskite thick junctions for X-ray detection | |
Kabir et al. | Photoconductors for x-ray image detectors | |
CN107425020A (zh) | 辐射传感器 | |
US20130161772A1 (en) | Flexible radiation detectors | |
CN109585477B (zh) | 平板探测器结构及其制备方法 | |
Jayawardena et al. | Millimeter-scale unipolar transport in high sensitivity organic–inorganic semiconductor X-ray detectors | |
KR102669620B1 (ko) | 고해상도 하이브리드 방사선 디텍터 | |
CN201852941U (zh) | 辐射探测器及其成像装置和电极结构 | |
WO2015186657A1 (ja) | 半導体装置およびその製造方法 | |
US7632539B2 (en) | Method for manufacturing photoconductive layers that constitute radiation imaging panels | |
US9348037B2 (en) | X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels | |
DE102015225134A1 (de) | Hybride Röntgendetektoren realisiert mittels Soft-sintern von zwei oder mehreren durchmischten Pulvern | |
US10502842B2 (en) | Radiation detector | |
CN115084176A (zh) | 直接型多能平板探测器及其制备方法 | |
JP6708493B2 (ja) | 放射線検出器及びその製造方法 | |
Shrestha et al. | A perspective on the device physics of lead halide perovskite semiconducting detector for gamma and x-ray sensing | |
WO2022030156A1 (ja) | 電離放射線変換デバイス、電離放射線の検出方法、及び電離放射線変換デバイスの製造方法 | |
JP2002168958A (ja) | 放射線検出器及び医用画像診断装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180619 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190507 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190531 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6535271 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |