JP6530871B1 - 端面入射型受光素子 - Google Patents
端面入射型受光素子 Download PDFInfo
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- JP6530871B1 JP6530871B1 JP2018558256A JP2018558256A JP6530871B1 JP 6530871 B1 JP6530871 B1 JP 6530871B1 JP 2018558256 A JP2018558256 A JP 2018558256A JP 2018558256 A JP2018558256 A JP 2018558256A JP 6530871 B1 JP6530871 B1 JP 6530871B1
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- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 230000001154 acute effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 17
- 230000031700 light absorption Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
図1〜図3に示すように、端面入射型受光素子1は、半導体基板10の(100)面を上面11(第1の面)として、上面11近傍にi−InGaAs層12からなる光吸収領域を備えた受光部2を有し、この半導体基板10の上面11に基板電極14(n電極)と、受光部2のp型拡散領域19の上面に受光部電極15(p電極)を備えている。半導体基板10は半絶縁性のInP基板であるが、端面入射型受光素子1の用途等に応じてSi基板等、適宜基板材料を選択可能である。InP基板は、波長が1μmより長い赤外光に対して透明であり、InP基板に入射した1μmより長波長の赤外光はInP基板内を進行する。
図4に示すように、(100)面を主面(上面11)とする清浄な半導体基板10(半絶縁性InP基板)上に、順に第1n−InP層16、第2n−InP層17、i−InGaAs層12、第3n−InP層18を気相成長法等により成膜する。そして、図示を省略するが、第3n−InP層18の所定の領域が露出するように開口したマスク層(例えばシリコン窒化膜)を形成し、選択拡散法により例えば亜鉛を拡散させたp型拡散領域19を形成する。第1n−InP層16、第2n−InP層17、i−InGaAs層12、第3n−InP層18の厚さは夫々5μm、2μm、1μm、2μm程度であり、p型拡散領域19の幅は20μm程度である。
図3において入射光の入射位置を高さ方向及び水平方向(奥行き方向)にずらした場合に、入射光の受光部2への到達率(受光部到達率)をシミュレーションした結果を図10に示す。受光部2は、平面視にて1辺が20μmの矩形又は外径20μmの円形に従来より小さい面積に形成されているが、入射位置を受光部2の中心に入射する位置から高さ方向又は水平方向に±20μmずらした場合でも90%以上の高い受光部到達率が得られる。従って、受光部2が小さくても、凹面反射部4により集光して確実に入射光を受光部2に導くことができるので、受光部2の縮小により端面入射型受光素子1を高速化でき、この端面入射型受光素子1を搭載した受信モジュールに光ファイバの出力端を固定する際の位置合わせが容易になる。
2 受光部
3 平面反射部
4 部分球面状凹面反射部
10 半導体基板
11 上面(第1の面)
21 下面(第2の面)
22 溝部
22a 第1傾斜面
23 凸状部
31 端面
42 V形溝部
42a 第3傾斜面
Claims (3)
- 端面入射型受光素子において、
半導体基板の第1の面の近傍に形成された受光部と、前記第1の面に対向する前記半導体基板の第2の面に前記第2の面と直交する方向から視た平面視で円形に形成された部分球面状凹面反射部と、前記第1の面と前記第2の面の間に形成された平面反射部とを備え、
前記平面反射部は、前記第1の面及び前記第2の面に垂直な前記半導体基板の端面に垂直に入射した入射光を前記部分球面状凹面反射部に向けて反射し、
前記部分球面状凹面反射部は、前記平面反射部で反射した入射光を前記受光部に集光するように反射することを特徴とする端面入射型受光素子。 - 前記平面反射部は、前記第2の面に鋭角に連なることを特徴とする請求項1に記載の端面入射型受光素子。
- 前記平面反射部は、前記第1の面に鈍角に連なることを特徴とする請求項1に記載の端面入射型受光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/026791 WO2019021362A1 (ja) | 2017-07-25 | 2017-07-25 | 端面入射型受光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6530871B1 true JP6530871B1 (ja) | 2019-06-19 |
JPWO2019021362A1 JPWO2019021362A1 (ja) | 2019-07-25 |
Family
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JP2018558256A Active JP6530871B1 (ja) | 2017-07-25 | 2017-07-25 | 端面入射型受光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20200168749A1 (ja) |
JP (1) | JP6530871B1 (ja) |
WO (1) | WO2019021362A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018156516A1 (en) * | 2017-02-21 | 2018-08-30 | Newport Corporation | High responsivity high bandwidth photodiode and method of manufacture |
US11276791B2 (en) | 2020-06-04 | 2022-03-15 | Kyoto Semiconductor Co., Ltd. | Edge incident type semiconductor light receiving device |
JP6795870B1 (ja) * | 2020-07-06 | 2020-12-02 | 株式会社京都セミコンダクター | 光給電コンバータ |
WO2022029841A1 (ja) * | 2020-08-03 | 2022-02-10 | 株式会社京都セミコンダクター | 受光素子ユニット |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08316506A (ja) * | 1995-05-12 | 1996-11-29 | Fujitsu Ltd | 半導体光検出装置およびその製造方法 |
US5600741A (en) * | 1994-05-11 | 1997-02-04 | Ant Nachrichtentechnik Gmbh | Arrangement for coupling optoelectronic components and optical waveguides to one another |
JP2003243674A (ja) * | 2002-02-19 | 2003-08-29 | Oki Electric Ind Co Ltd | 半導体受光素子 |
JP2006511933A (ja) * | 2002-10-10 | 2006-04-06 | イクスポーネント フォトニクス,インコーポレイティド | 内部リフレクターを備えた半導体光検出器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003115629A (ja) * | 2001-10-02 | 2003-04-18 | Rohm Co Ltd | 光半導体装置 |
WO2006088859A2 (en) * | 2005-02-16 | 2006-08-24 | Applied Materials, Inc. | Optical coupling to ic chip |
-
2017
- 2017-07-25 JP JP2018558256A patent/JP6530871B1/ja active Active
- 2017-07-25 WO PCT/JP2017/026791 patent/WO2019021362A1/ja active Application Filing
- 2017-07-25 US US16/611,283 patent/US20200168749A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5600741A (en) * | 1994-05-11 | 1997-02-04 | Ant Nachrichtentechnik Gmbh | Arrangement for coupling optoelectronic components and optical waveguides to one another |
JPH08316506A (ja) * | 1995-05-12 | 1996-11-29 | Fujitsu Ltd | 半導体光検出装置およびその製造方法 |
JP2003243674A (ja) * | 2002-02-19 | 2003-08-29 | Oki Electric Ind Co Ltd | 半導体受光素子 |
JP2006511933A (ja) * | 2002-10-10 | 2006-04-06 | イクスポーネント フォトニクス,インコーポレイティド | 内部リフレクターを備えた半導体光検出器 |
Also Published As
Publication number | Publication date |
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WO2019021362A1 (ja) | 2019-01-31 |
JPWO2019021362A1 (ja) | 2019-07-25 |
US20200168749A1 (en) | 2020-05-28 |
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