JP6530755B2 - 回転可能な被加熱静電チャック - Google Patents

回転可能な被加熱静電チャック Download PDF

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Publication number
JP6530755B2
JP6530755B2 JP2016541378A JP2016541378A JP6530755B2 JP 6530755 B2 JP6530755 B2 JP 6530755B2 JP 2016541378 A JP2016541378 A JP 2016541378A JP 2016541378 A JP2016541378 A JP 2016541378A JP 6530755 B2 JP6530755 B2 JP 6530755B2
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JP
Japan
Prior art keywords
electrostatic chuck
lamps
disposed
metal plate
dielectric disk
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JP2016541378A
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English (en)
Japanese (ja)
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JP2017502514A (ja
JP2017502514A5 (enExample
Inventor
アナンサ ケイ スブラマニ
アナンサ ケイ スブラマニ
アシシュ ゴール
アシシュ ゴール
ウェイ ダブリュー ワン
ウェイ ダブリュー ワン
バラス スワミナサン
バラス スワミナサン
ヴィジェイ ディー パーケ
ヴィジェイ ディー パーケ
シャオション ユエン
シャオション ユエン
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2017502514A5 publication Critical patent/JP2017502514A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016541378A 2013-12-18 2014-12-08 回転可能な被加熱静電チャック Active JP6530755B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361917921P 2013-12-18 2013-12-18
US61/917,921 2013-12-18
US14/560,744 2014-12-04
US14/560,744 US9853579B2 (en) 2013-12-18 2014-12-04 Rotatable heated electrostatic chuck
PCT/US2014/069040 WO2015094750A1 (en) 2013-12-18 2014-12-08 Rotatable heated electrostatic chuck

Publications (3)

Publication Number Publication Date
JP2017502514A JP2017502514A (ja) 2017-01-19
JP2017502514A5 JP2017502514A5 (enExample) 2018-01-25
JP6530755B2 true JP6530755B2 (ja) 2019-06-12

Family

ID=53369382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016541378A Active JP6530755B2 (ja) 2013-12-18 2014-12-08 回転可能な被加熱静電チャック

Country Status (8)

Country Link
US (1) US9853579B2 (enExample)
EP (1) EP3084819B1 (enExample)
JP (1) JP6530755B2 (enExample)
KR (1) KR102243410B1 (enExample)
CN (2) CN109585252B (enExample)
SG (1) SG11201604062WA (enExample)
TW (1) TWI649833B (enExample)
WO (1) WO2015094750A1 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9888528B2 (en) 2014-12-31 2018-02-06 Applied Materials, Inc. Substrate support with multiple heating zones
JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
TWI725067B (zh) * 2015-10-28 2021-04-21 美商應用材料股份有限公司 可旋轉靜電夾盤
US10460969B2 (en) * 2016-08-22 2019-10-29 Applied Materials, Inc. Bipolar electrostatic chuck and method for using the same
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
US10573498B2 (en) 2017-01-09 2020-02-25 Applied Materials, Inc. Substrate processing apparatus including annular lamp assembly
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
JP6985399B2 (ja) 2017-03-09 2021-12-22 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 静電式基板保持ユニット
JP6605061B2 (ja) * 2017-07-07 2019-11-13 東京エレクトロン株式会社 載置台構造及び処理装置
US10811296B2 (en) * 2017-09-20 2020-10-20 Applied Materials, Inc. Substrate support with dual embedded electrodes
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11149345B2 (en) * 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20250100790A (ko) 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
CN111564354B (zh) * 2019-02-14 2024-11-15 上海陛通半导体能源科技股份有限公司 用于晶圆等离子体刻蚀的方法和设备
KR102699383B1 (ko) 2019-04-18 2024-08-26 삼성전자주식회사 웨이퍼 클리닝 장치
USD893441S1 (en) 2019-06-28 2020-08-18 Applied Materials, Inc. Base plate for a processing chamber substrate support
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
KR102347145B1 (ko) * 2020-01-29 2022-01-04 무진전자 주식회사 회전 척에 내장된 광원을 이용한 기판 처리 장치
CN111477569B (zh) * 2020-04-10 2024-02-27 北京北方华创微电子装备有限公司 一种半导体设备中的加热装置及半导体设备
CN113832450A (zh) * 2020-06-24 2021-12-24 拓荆科技股份有限公司 用于晶圆自动升降旋转的方法及设备
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
USD947914S1 (en) 2020-11-23 2022-04-05 Applied Materials, Inc. Base plate for a processing chamber substrate support
CN112760609B (zh) * 2020-12-22 2022-10-21 北京北方华创微电子装备有限公司 磁控溅射设备
US11815816B2 (en) * 2021-02-15 2023-11-14 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
US12112972B2 (en) 2021-04-02 2024-10-08 Applied Materials, Inc. Rotating biasable pedestal and electrostatic chuck in semiconductor process chamber
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US20220384194A1 (en) * 2021-05-28 2022-12-01 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US12014906B2 (en) * 2021-11-19 2024-06-18 Applied Materials, Inc. High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber
US20250019832A1 (en) * 2021-11-22 2025-01-16 Cvd Equipment Corporation Improvements in chemical vapor deposition systems
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
CN114267625B (zh) * 2021-12-20 2025-06-24 北京北方华创微电子装备有限公司 半导体工艺设备及其承载装置
US20230282506A1 (en) * 2022-03-02 2023-09-07 Applied Materials, Inc. Biasable rotating pedestal
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US12449738B2 (en) * 2023-06-20 2025-10-21 Applied Materials, Inc. Rotary substrate support for aligning a substrate

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
JPH05198390A (ja) * 1992-01-22 1993-08-06 Jeol Ltd 高周波プラズマ装置
JP3186008B2 (ja) * 1994-03-18 2001-07-11 株式会社日立製作所 ウエハ保持装置
JP3089150B2 (ja) * 1993-10-19 2000-09-18 キヤノン株式会社 位置決めステージ装置
JP4335981B2 (ja) * 1998-01-16 2009-09-30 キヤノンアネルバ株式会社 高温リフロースパッタリング方法及び高温リフロースパッタリング装置
US6081414A (en) * 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
JP2000150394A (ja) * 1998-11-17 2000-05-30 Toshiba Corp 基板処理装置及び基板位置合わせ装置
US6462928B1 (en) * 1999-05-07 2002-10-08 Applied Materials, Inc. Electrostatic chuck having improved electrical connector and method
JP4493756B2 (ja) * 1999-08-20 2010-06-30 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6554905B1 (en) 2000-04-17 2003-04-29 Asm America, Inc. Rotating semiconductor processing apparatus
JP4554065B2 (ja) * 2000-12-19 2010-09-29 東京エレクトロン株式会社 プラズマ処理装置
KR100427459B1 (ko) * 2001-09-05 2004-04-30 주성엔지니어링(주) 아크 방지용 정전척
JP2003133233A (ja) 2001-10-23 2003-05-09 Hitachi Kokusai Electric Inc 基板処理装置
US20030154922A1 (en) * 2002-02-19 2003-08-21 Nathan House C-chuck insulator strip
US6875927B2 (en) * 2002-03-08 2005-04-05 Applied Materials, Inc. High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications
JP4031691B2 (ja) * 2002-09-20 2008-01-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US20080084650A1 (en) * 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
WO2008069259A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
JP4833143B2 (ja) * 2007-04-19 2011-12-07 株式会社日立国際電気 基板処理装置
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
JP5280459B2 (ja) * 2008-12-25 2013-09-04 キヤノンアネルバ株式会社 スパッタリング装置
WO2012046397A1 (ja) * 2010-10-07 2012-04-12 キヤノンアネルバ株式会社 基板処理装置
US20120222618A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Dual plasma source, lamp heated plasma chamber
JP2012186245A (ja) * 2011-03-04 2012-09-27 Tokyo Electron Ltd 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
US9793144B2 (en) 2011-08-30 2017-10-17 Evatec Ag Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer
JPWO2013088598A1 (ja) * 2011-12-15 2015-04-27 キヤノンアネルバ株式会社 基板ホルダ装置および真空処理装置
CN104067382B (zh) * 2012-01-26 2017-04-26 京瓷株式会社 静电夹头
US9048190B2 (en) * 2012-10-09 2015-06-02 Applied Materials, Inc. Methods and apparatus for processing substrates using an ion shield
US8906810B2 (en) * 2013-05-07 2014-12-09 Lam Research Corporation Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization
JP6088346B2 (ja) * 2013-05-09 2017-03-01 新光電気工業株式会社 静電チャック及び半導体製造装置

Also Published As

Publication number Publication date
EP3084819A1 (en) 2016-10-26
CN109585252B (zh) 2021-05-07
KR102243410B1 (ko) 2021-04-21
SG11201604062WA (en) 2016-07-28
TW201528424A (zh) 2015-07-16
CN109585252A (zh) 2019-04-05
TWI649833B (zh) 2019-02-01
EP3084819A4 (en) 2017-05-17
US20150170952A1 (en) 2015-06-18
CN105874585B (zh) 2019-01-04
KR20160098388A (ko) 2016-08-18
US9853579B2 (en) 2017-12-26
CN105874585A (zh) 2016-08-17
EP3084819B1 (en) 2018-08-15
JP2017502514A (ja) 2017-01-19
WO2015094750A1 (en) 2015-06-25

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