CN109585252B - 可旋转加热静电夹盘 - Google Patents

可旋转加热静电夹盘 Download PDF

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Publication number
CN109585252B
CN109585252B CN201811152060.XA CN201811152060A CN109585252B CN 109585252 B CN109585252 B CN 109585252B CN 201811152060 A CN201811152060 A CN 201811152060A CN 109585252 B CN109585252 B CN 109585252B
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China
Prior art keywords
electrostatic chuck
shaft
dielectric disk
plate
disposed
Prior art date
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CN201811152060.XA
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English (en)
Chinese (zh)
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CN109585252A (zh
Inventor
阿纳塔·K·苏比玛尼
阿希什·戈埃尔
伟·W·王
比哈瑞斯·斯里尼瓦桑
维贾伊·D·帕克赫
袁晓雄
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN201811152060.XA 2013-12-18 2014-12-08 可旋转加热静电夹盘 Active CN109585252B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361917921P 2013-12-18 2013-12-18
US61/917,921 2013-12-18
US14/560,744 2014-12-04
US14/560,744 US9853579B2 (en) 2013-12-18 2014-12-04 Rotatable heated electrostatic chuck
CN201480067593.1A CN105874585B (zh) 2013-12-18 2014-12-08 可旋转加热静电夹盘

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480067593.1A Division CN105874585B (zh) 2013-12-18 2014-12-08 可旋转加热静电夹盘

Publications (2)

Publication Number Publication Date
CN109585252A CN109585252A (zh) 2019-04-05
CN109585252B true CN109585252B (zh) 2021-05-07

Family

ID=53369382

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201811152060.XA Active CN109585252B (zh) 2013-12-18 2014-12-08 可旋转加热静电夹盘
CN201480067593.1A Active CN105874585B (zh) 2013-12-18 2014-12-08 可旋转加热静电夹盘

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201480067593.1A Active CN105874585B (zh) 2013-12-18 2014-12-08 可旋转加热静电夹盘

Country Status (8)

Country Link
US (1) US9853579B2 (enExample)
EP (1) EP3084819B1 (enExample)
JP (1) JP6530755B2 (enExample)
KR (1) KR102243410B1 (enExample)
CN (2) CN109585252B (enExample)
SG (1) SG11201604062WA (enExample)
TW (1) TWI649833B (enExample)
WO (1) WO2015094750A1 (enExample)

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US9888528B2 (en) 2014-12-31 2018-02-06 Applied Materials, Inc. Substrate support with multiple heating zones
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US10460969B2 (en) * 2016-08-22 2019-10-29 Applied Materials, Inc. Bipolar electrostatic chuck and method for using the same
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
US10573498B2 (en) 2017-01-09 2020-02-25 Applied Materials, Inc. Substrate processing apparatus including annular lamp assembly
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
EP3593379B1 (de) * 2017-03-09 2023-08-16 EV Group E. Thallner GmbH Elektrostatische substrathalterung
JP6605061B2 (ja) * 2017-07-07 2019-11-13 東京エレクトロン株式会社 載置台構造及び処理装置
US10811296B2 (en) * 2017-09-20 2020-10-20 Applied Materials, Inc. Substrate support with dual embedded electrodes
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11149345B2 (en) * 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
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KR102347145B1 (ko) * 2020-01-29 2022-01-04 무진전자 주식회사 회전 척에 내장된 광원을 이용한 기판 처리 장치
CN111477569B (zh) * 2020-04-10 2024-02-27 北京北方华创微电子装备有限公司 一种半导体设备中的加热装置及半导体设备
CN113832450A (zh) * 2020-06-24 2021-12-24 拓荆科技股份有限公司 用于晶圆自动升降旋转的方法及设备
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USD947914S1 (en) 2020-11-23 2022-04-05 Applied Materials, Inc. Base plate for a processing chamber substrate support
CN112760609B (zh) * 2020-12-22 2022-10-21 北京北方华创微电子装备有限公司 磁控溅射设备
US11815816B2 (en) * 2021-02-15 2023-11-14 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
US12112972B2 (en) 2021-04-02 2024-10-08 Applied Materials, Inc. Rotating biasable pedestal and electrostatic chuck in semiconductor process chamber
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US20220384194A1 (en) * 2021-05-28 2022-12-01 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
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US12014906B2 (en) * 2021-11-19 2024-06-18 Applied Materials, Inc. High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber
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Also Published As

Publication number Publication date
US20150170952A1 (en) 2015-06-18
TW201528424A (zh) 2015-07-16
KR20160098388A (ko) 2016-08-18
KR102243410B1 (ko) 2021-04-21
WO2015094750A1 (en) 2015-06-25
JP2017502514A (ja) 2017-01-19
CN109585252A (zh) 2019-04-05
EP3084819B1 (en) 2018-08-15
EP3084819A4 (en) 2017-05-17
US9853579B2 (en) 2017-12-26
EP3084819A1 (en) 2016-10-26
TWI649833B (zh) 2019-02-01
SG11201604062WA (en) 2016-07-28
JP6530755B2 (ja) 2019-06-12
CN105874585A (zh) 2016-08-17
CN105874585B (zh) 2019-01-04

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