CN105874585B - 可旋转加热静电夹盘 - Google Patents
可旋转加热静电夹盘 Download PDFInfo
- Publication number
- CN105874585B CN105874585B CN201480067593.1A CN201480067593A CN105874585B CN 105874585 B CN105874585 B CN 105874585B CN 201480067593 A CN201480067593 A CN 201480067593A CN 105874585 B CN105874585 B CN 105874585B
- Authority
- CN
- China
- Prior art keywords
- dielectric disc
- shaft
- electrostatic chuck
- plate
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
一种静电夹盘包括:介电盘,具有支撑基板的支撑表面以及相对的第二表面,其中至少一个夹持电极设置于所述介电盘内;射频(RF)偏压板,设置在所述介电盘下方;多个灯,设置在所述射频偏压板下方以加热所述介电盘;金属板,设置在这些灯下方以吸收由这些灯产生的热;轴杆,在所述轴杆的第一端耦接至所述介电盘的所述第二表面以支撑所述介电盘而使所述介电盘与所述射频偏压板呈间隔开的关系,且所述轴杆延伸离开所述介电盘且延伸穿过所述射频偏压板和所述金属板;以及旋转组件,耦接至所述轴杆以使所述轴杆和所述介电盘相对于所述射频偏压板、灯、以及金属板旋转。
Description
技术领域
本公开案的实施方式大体涉及静电夹盘(electrostatic chuck),所述静电夹盘用于在微电子器件制造工艺中保持(retain)基板。
背景技术
在基板上形成一些器件(例如STT-RAM)需要多层薄膜,这些薄膜是在沉积腔室中沉积,所述沉积腔室比如物理气相沉积(PVD)腔室。在一些实施方式中,基板需要在沉积工艺期间旋转,以获得良好的膜均匀性。沉积一些层也可能需要基板受到加热。此外,沉积工艺需要高真空压力。静电夹盘经常用于在沉积工艺期间将基板静电保持在基板支撑件上。通常,静电夹盘包括陶瓷主体,所述陶瓷主体中设置有一或多个电极。一般的静电夹盘仅垂直向上及向下移动,以有助于基板的移送。然而,发明人已观察到,这样的移动限制会阻止使用这些习知的静电夹盘进行离轴(off-axis)沉积,所述离轴沉积是由于基板上有非均匀沉积。
因此,发明人已提供改良的可旋转(rotatable)加热静电夹盘的实施方式。
发明内容
本文提供可旋转加热静电夹盘的实施方式。在一些实施方式中,一种静电夹盘包括:介电盘,具有支撑基板的支撑表面以及相对的第二表面,其中至少一个夹持电极设置于所述介电盘内;射频(RF)偏压板,设置在所述介电盘下方;多个灯,设置在所述射频偏压板下方以加热所述介电盘;金属板,设置在所述多个灯下方以吸收由所述多个灯产生的热;轴杆,所述轴杆的第一端耦接至所述介电盘的所述第二表面以支撑所述介电盘而使所述介电盘与所述射频偏压板呈间隔开的关系,且所述轴杆延伸离开所述介电盘且延伸穿过所述射频偏压板和所述金属板;以及旋转组件,耦接至所述轴杆以使所述轴杆和所述介电盘相对于所述射频偏压板、所述多个灯、以及所述金属板旋转。
在一些实施方式中,一种静电夹盘包括:介电盘,具有支撑基板的支撑表面以及相对的第二表面,其中至少一个夹持电极设置于所述介电盘内;射频(RF)偏压板,设置在所述介电盘下方;电感滤波器(inductor filter),设置在耦接至所述至少一个夹持电极的导体周围,以将与所述至少一个夹持电极的射频干扰减至最小;多个灯,设置在所述射频偏压板下方以加热所述介电盘;金属板,设置在所述多个灯下方以吸收由所述多个灯产生的热;轴杆,在所述轴杆的第一端耦接至所述介电盘的所述第二表面以支撑所述介电盘而使所述介电盘与所述射频偏压板呈间隔开的关系,且所述轴杆延伸离开所述介电盘且延伸穿过所述射频偏压板和所述金属板;以及磁性旋转组件,耦接至所述轴杆以使所述轴杆和所述介电盘相对于所述射频偏压板、所述多个灯、以及所述金属板旋转,其中所述磁性旋转组件包括内磁体与外磁体,所述内磁体附接至所述轴杆的下部分而接近所述轴杆的第二端,所述第二端与所述第一端相对,所述外磁体设置在所述内磁体周围以驱动所述内磁体的旋转。
在一些实施方式中,一种静电夹盘包括:介电盘,具有支撑基板的支撑表面以及相对的第二表面,其中至少一个夹持电极设置于所述介电盘内;射频偏压板,设置在所述介电盘下方;多个灯,设置在所述射频偏压板下方以加热所述介电盘;金属板,设置在所述多个灯下方以吸收由所述多个灯产生的热;外壳,容纳所述射频偏压板、所述多个灯、和所述金属板;间隙,设置在所述金属板的外径与所述外壳的内表面之间,其中所述间隙的尺寸被设计成使得当所述金属板吸收来自所述多个灯的热时,所述金属板的热膨胀导致所述金属板的所述外径接触所述外壳的所述内表面;轴杆,在所述轴杆的第一端耦接至所述介电盘的所述第二表面以支撑所述介电盘而使所述介电盘与所述射频偏压板呈间隔开的关系,且所述轴杆延伸离开所述介电盘且延伸穿过所述射频偏压板和所述金属板;以及磁性旋转组件,耦接至所述轴杆以使所述轴杆和所述介电盘相对于所述射频偏压板、所述多个灯、以及所述金属板旋转。
本公开案的其他与进一步的实施方式描述于下文中。
附图说明
通过参考附图中描绘的本公开案的说明性实施方式,可了解于上文简要概述且于下文中更详细论述的本公开案的实施方式。然而,应注意附图仅绘示本公开案的典型实施方式,因此不应被视为对本公开案的范围的限制,因为本公开案可容许其他等同有效的实施方式。
图1描绘适合与根据本公开案的一些实施方式的静电夹盘一并使用的处理腔室。
图2描绘根据本公开案的一些实施方式的静电夹盘的截面视图。
图3描绘根据本公开案的一些实施方式的静电夹盘的上部分的截面视图。
图4描绘根据本公开案的一些实施方式的射频(RF)偏压板与基板加热设备的俯视图。
为了助于了解,已尽可能使用相同的标号表示各图共用的相同元件。附图并未按比例尺绘制,且可为了清楚起见而经过简化。应考虑到一个实施方式的元件与特征可有利地并入其他实施方式而无需进一步记叙。
具体实施方式
本文提供可旋转加热静电夹盘的实施方式。本发明的静电夹盘可有利地快速加热与冷却(与设置在静电夹盘上的基板的快速加热与冷却同时),由此在基板处理中提供工艺的灵活性与增加的产量。本发明的静电夹盘的实施方式也可有利地减少或消除对基板的损坏,所述基板的损坏是由摩擦造成的,而所述摩擦是由于基板与静电夹盘在处理期间热膨胀的不同而导致。
图1是根据本公开案的一些实施方式的等离子体处理腔室的示意截面视图。在一些实施方式中,所述等离子体处理腔室是物理气相沉积(PVD)处理腔室。然而,也可使用或修改其他类型的处理腔室,以与本文描述的本发明的静电夹盘的实施方式一并使用。
腔室100是合适地适于在基板处理期间维持腔室内部空间120内的次大气压的真空腔室。腔室100包括腔室主体106,腔室主体106被盖104覆盖,盖104包围(enclose)位于腔室内部空间120的上半部的处理空间119。腔室100也可包括一或多个屏蔽件105,一或多个屏蔽件105环绕多个腔室部件以防止这些部件与离子化的工艺材料之间有不希望的反应。腔室主体106与盖104可由金属(比如铝)制成。腔室主体106可通过耦接至接地端115而接地。
基板支撑件124设置在腔室内部空间120内,以支撑及保持基板S,基板S比如半导体晶片,或例如其他可静电保持的此类基板。基板支撑件124可通常包括静电夹盘150(下文中关于图2至图4更详细地描述)以及用于支撑静电夹盘150的中空支撑轴杆112。中空支撑轴杆112提供导管,以提供例如工艺气体、流体、冷却剂、电力、或类似物至静电夹盘150。
在一些实施方式中,中空支撑轴杆112耦接至升降机构113,升降机构113提供静电夹盘150在上处理位置(如图1所示)与下移送位置(未图示)之间的垂直移动。波纹管组件110设置于中空支撑轴杆112周围,且耦接在静电夹盘150与腔室100的底表面126之间,以提供柔性密封(flexible seal),所述柔性密封容许静电夹盘150垂直运动同时防止真空从腔室100内损失。波纹管组件110还包括下波纹管凸缘164,下波纹管凸缘164接触O形环165或其他适合的密封元件,O形环165或其他适合的密封元件接触底表面126以有助于防止腔室真空的损失。
中空支撑轴杆112提供导管以用于将流体源142、气源141、夹持电源140、以及射频源(例如射频等离子体电源170与射频偏压电源117)耦接至静电夹盘150。在一些实施方式中,射频等离子体电源170与射频偏压电源117经由各别的射频匹配网络(图中仅显示射频匹配网络116)耦接至静电夹盘。
基板升降件130可包括升降销109,升降销109装设于平台108上,平台108连接至轴杆111,轴杆111耦接至第二升降机构132,以抬升及降下基板升降件130,使得基板“S”可放置在静电夹盘150上或从静电夹盘150移除。静电夹盘150包括穿孔(描述于下文)以接收升降销109。波纹管组件131耦接在基板升降件130与底表面126之间,以提供柔性密封,所述柔性密封在基板升降件130垂直运动期间维持腔室真空。
腔室100耦接至真空系统114且与真空系统114流体连通,真空系统114包括节流阀(未图示)与真空泵(未图示),所述节流阀与真空泵用于使腔室100排气。腔室100内的压力可通过调整节流阀和/或真空泵而调节。腔室100还耦接至工艺气体源118且与工艺气体源118流体连通,工艺气体源118可供应一或多种工艺气体至腔室100以用于处理设置在腔室100中的基板。
在操作中,举例而言,可在腔室内部空间120中产生等离子体102,以执行一或多个工艺。等离子体102可通过下述方式产生:将来自等离子体电源(例如射频等离子体电源170)的电力经由一或多个电极耦合于工艺气体,以引燃所述工艺气体且产生等离子体102,所述一或多个电极接近腔室内部空间120或在腔室内部空间120内。在一些实施方式中,也可从偏压电源(例如射频偏压电源117)经由电容耦合偏压板(描述于下文)提供偏压电力至设置在静电夹盘150内的一或多个电极(描述于下文),以从等离子体朝向基板S吸引离子。
在一些实施方式中(例如腔室100是PVD腔室的实施方式中),包括待沉积于基板S上的源材料的靶材166可设置在基板上方且设置于腔室内部空间120内。靶材166可由腔室100的接地导电部分支撑,所述接地导电部分例如为穿过介电隔绝件(isolator)的铝适配器。在其他实施方式中,腔室100可包括呈多阴极排列方式的多个靶材,以使用同一腔室沉积不同材料层。
可控制的直流电源168可耦接至腔室100以施加负电压(或偏压)至靶材166。射频偏压电源117可耦接至基板支撑件124以于基板S上感应负的直流偏压。此外,在一些实施方式中,于处理期间,负的直流自偏压可形成于基板S上。在一些实施方式中,射频等离子体电源170也可耦接至腔室100,以施加射频电力至靶材166而有助于控制基板S上沉积速率的径向分布。操作中,腔室100中所产生的等离子体102中的离子与来自靶材166的源材料反应。所述反应导致靶材166发射源材料的原子,而这些原子随后被引向基板S,从而沉积材料。
图2描绘根据本公开案的实施方式的静电夹盘(夹盘200)的截面视图。夹盘200包括盘202、轴杆204、以及外壳206,轴杆204从盘202的底部延伸,外壳206包围盘202、轴杆204、以及夹盘200的所有部件(描述于下文)。
盘202由介电材料形成,所述介电材料比如陶瓷材料,例如氮化铝、氧化铝、氮化硼、掺杂有氧化钛的氧化铝、及类似材料。盘202包括一或多个夹持电极208,夹持电极208设置在盘202的上表面附近。一或多个夹持电极208由适合的导电材料制造,比如钼、钛、或类似材料。一或多个夹持电极208可用会于处理期间将基板充分地紧固至盘的上表面的任何配置方式排列。例如,一或多个夹持电极208可被排列以提供单一电极静电夹盘、双极(bipolar)静电夹盘、或类似静电夹盘。
如前文所记载,盘202也可包括一或多个射频偏压电极210。一或多个射频偏压电极210电容地耦合至射频电力,以从等离子体朝向设置在盘202上的基板吸引离子。电力经由射频偏压板212被输送至射频偏压电极210,射频偏压板212设置于盘202下方,接收来自外部射频电源(例如射频偏压电源117)的电力。射频偏压板212电容地耦合至射频偏压电极210,从而移除导体上的任何直接电耦合。由此,在盘202正在旋转的同时,电力能输送至射频偏压电极210。
为了有助于加热盘202与基板(当基板设置于盘202上时),夹盘200包括灯外壳216,灯外壳216包括多个灯214且设置于射频偏压板212之下。灯外壳216由能够耐受多个灯214的热的材料形成。例如,灯外壳216可由陶瓷材料形成。多个灯214包括能够发射足够的热以通过辐射加热盘202的任何类型的灯。例如,多个灯214可包括卤素灯。为了容许多个灯214产生的热抵达盘202,射频偏压板212包括槽,这些槽所处的位置对应于多个灯214的位置,如图4中更详细所示。
夹盘200还可包括轴承218,轴承218位于盘202附近(例如,在盘202的约3英寸内),以于旋转期间提供夹盘200增加的刚性。轴承218可包括例如交叉滚子轴承或类似轴承。金属板220设置在灯外壳216之下,以将热传导离开轴承218,若不然,热会导致轴承膨胀且最终会卡住。金属板220可由任何工艺相容的金属或金属合金形成,例如铝。金属板220的尺寸被设计而使得间隙设置在金属板220的外边缘与外壳206的内表面之间。在操作夹盘200期间,多个灯214产生的热加热金属板220,而导致金属板220膨胀,使得金属板220的外径(或边缘)接触外壳206的内表面。一旦接触外壳206的内表面,金属板220容易通过传导而传送热至外壳206。流体通道(描述于下文)可设置于外壳206中,以使热传送流体(例如冷却剂)流动而冷却外壳206
夹盘200进一步包括磁性驱动组件222以使盘202旋转。磁性驱动组件222包括内磁体222A与外磁体222B。内磁体222A附接(或固定)至轴杆204。在一些实施方式中,内磁体222A附接至轴杆204的下部分而接近轴杆204的与盘202相对的一端。外磁体222B设置在外壳206外而接近内磁体222A。外磁体222B可由适合的机构驱动(例如由皮带驱动器或电机驱动),以驱动内磁体222A、和轴杆204及盘202。因为内磁体222A设置于外壳206内,所以内磁体222A处于真空压力下,且因为外磁体222B设置在外壳206的外部,所以外磁体222B处于大气压力下。然而,可取代上述方式,将内磁体222A与外磁体222B皆设置于外壳206内。因此,磁性驱动组件222使盘202与轴杆204相对于处理腔室与夹盘200的维持静态的其余部件旋转,所述维持静态的其余部件例如外壳206、灯外壳216、金属板220、射频偏压板212、及类似部件。或者,磁性驱动组件222可使用其他配置方式使盘202与轴杆204旋转。例如,在一些实施方式中,内磁体222A与外磁体222B可分别作用为转子与定子,其中导体缠绕于定子周围以电磁地驱动所述转子。
夹盘200还包括轴承组件224,轴承组件224位于轴杆204的与盘202相对的一端处。轴承组件224支撑轴杆204且有助于轴杆204旋转。此外,发明人已提供改良的方法以通过轴承组件224发送(route)电力至夹持电极208,而有助于在旋转夹盘200的同时提供电力给夹持电极208。电力从直流电源226被汲引通过外壳206中的连接件且发送至轴承组件224。电流流过轴承组件224,且接着经由夹持电力线228发送至夹持电极208,夹持电力线228设置在轴杆204的内部内。为了避免与夹持电源(例如直流电源226)的任何干扰,轴承组件可耦接至绝缘体230,绝缘体230耦接至外壳206的内部。
参考图3中的夹盘200的截面视图,多个灯214从多个导体304接收电力,这些导体304设置在介电板302中,介电板302比如为陶瓷板。导体304可接收来自直流电源226的电力或经由加热器电力线(例如导体)320接收来自另一电源(未图示)的电力。在一些实施方式中,介电层306可设置在介电板302顶上,以保护导体304且防止导体304与夹盘200的任何其他导电元件之间的不经意接触。提供介电层306中的开口以有助于使导体304耦接至各个的灯214。在一些实施方式中,多个灯可分成多个区块,例如,内灯阵列以及独立受控的外灯阵列,如图4所绘示。
如前文所解释,一旦启动多个灯214,则产生热且盘202被加热。因为热沿每一方向发射而不仅只朝向盘202发射,所以将金属板220设置在灯外壳216下方以吸收热。在吸收过程期间,金属板220膨胀且开始延伸进入金属板220的外边缘与外壳206之间的间隙316。金属板220一旦接触外壳206,则将热传送至外壳206。为了保持外壳206冷却,在外壳206中形成多个流体通道308。任何适合的冷却剂(例如水、丙二醇、或类似物)可流过流体通道308而冷却外壳206。
射频偏压板212可从射频偏压电源117接收射频偏压板212的电力,或经由射频电力线(例如导体)310接收来自另一电源(未图示)的电力。为了防止射频波与夹持电源的干扰,夹盘200包括电感滤波器312。电感滤波器312围绕夹持电力线228以过滤射频波。
为了有助于将基板放置在盘202上及将基板从盘202移除,夹盘200也可包括升降销组件,所述升降销组件包括多个升降销314,以将基板抬升离开盘202及将基板降下到盘202上。在一些实施方式中,多个升降销314的至少之一可包括高温计,以测量盘202的温度。盘202的与升降销314相对设置的区域可被处理而具有非常高的发射率,以有助于通过高温计监测盘202的温度。
在一些实施方式中,轴杆204还可包括导管318,以在处理期间当基板设置于盘202上时提供背侧气体通过盘202而至基板背侧。导管318可流体地耦接至气源141,如上文针对图1描述的。
图4描绘根据本公开案的一些实施方式的射频偏压板与基板加热设备的俯视图。图4描绘包括多个开口404的射频偏压板212,这些开口404对应于多个灯214的位置。如前文所解释,多个开口404容许多个灯214产生的热对盘202进行加热。射频偏压板212与灯外壳216还包括中央孔402和多个孔406,中央孔402容许轴杆204通过中央孔402,多个孔406容许多个升降销314通过多个孔406。虽然图示为以特定配置方式排列的槽,但这些开口的形状与数目以及这些灯的形状与数目可有所变化,以提供盘202上的期望的热分布。
虽然前文涉及本公开案的实施方式,但可在不背离本公开案的基本范围的情况下设计出本公开案的其他与进一步的实施方式。
Claims (15)
1.一种静电夹盘,包括:
介电盘,所述介电盘具有支撑基板的支撑表面以及相对的第二表面,其中至少一个夹持电极设置于所述介电盘内;
射频(RF)偏压板,所述射频偏压板设置在所述介电盘下方;
多个灯,所述多个灯设置在所述射频偏压板下方以加热所述介电盘;
金属板,所述金属板设置在所述多个灯下方以吸收由所述多个灯产生的热;
轴杆,所述轴杆在所述轴杆的第一端耦接至所述介电盘的所述第二表面以支撑所述介电盘而使所述介电盘与所述射频偏压板呈间隔开的关系,且所述轴杆延伸离开所述介电盘且延伸穿过所述射频偏压板和所述金属板;以及
旋转组件,所述旋转组件耦接至所述轴杆以使所述轴杆和所述介电盘相对于所述射频偏压板、所述多个灯、以及所述金属板旋转。
2.如权利要求1所述的静电夹盘,其中所述静电夹盘是双极静电夹盘。
3.如权利要求1所述的静电夹盘,进一步包括:
外壳,所述外壳容纳所述射频偏压板、所述多个灯、以及所述金属板。
4.如权利要求3所述的静电夹盘,进一步包括:
间隙,所述间隙设置在所述金属板的外径与所述外壳的内表面之间,其中所述间隙的尺寸被设计成使得当所述金属板吸收来自所述多个灯的热时,所述金属板的热膨胀导致所述金属板的所述外径接触所述外壳的所述内表面。
5.如权利要求1所述的静电夹盘,其中所述射频偏压板设置在所述介电盘与所述多个灯之间。
6.如权利要求5所述的静电夹盘,其中所述偏压板包括多个开口,以容许从所述多个灯发射的热对所述介电盘进行加热。
7.如权利要求1至6的任一项所述的静电夹盘,其中所述多个灯包括卤素灯。
8.如权利要求1至6的任一项所述的静电夹盘,其中所述多个灯包括内灯阵列以及能独立受控的外灯阵列。
9.如权利要求1至6的任一项所述的静电夹盘,其中所述旋转组件是磁性旋转组件。
10.如权利要求9所述的静电夹盘,其中所述磁性旋转组件包括内磁体与外磁体,所述内磁体附接至所述轴杆的下部分而接近所述轴杆的第二端,所述第二端与所述第一端相对,所述外磁体设置在所述内磁体周围以驱动所述内磁体的旋转。
11.如权利要求1至6的任一项所述的静电夹盘,进一步包括:
轴承组件,所述轴承组件设置于所述轴杆周围。
12.如权利要求11所述的静电夹盘,其中所述轴承组件电耦接至所述夹持电极,使得能通过所述轴承组件馈送电力,以提供电力给所述至少一个夹持电极。
13.如权利要求1至6的任一项所述的静电夹盘,进一步包括:
电感滤波器,所述电感滤波器设置在耦接至所述至少一个夹持电极的导体周围,以将与所述至少一个夹持电极的射频干扰减至最小。
14.如权利要求1至6的任一项所述的静电夹盘,进一步包括:
升降销组件,所述升降销组件包括多个升降销,所述多个升降销设置成能移动地穿过所述介电盘的所述支撑表面。
15.如权利要求14所述的静电夹盘,其中所述多个升降销的至少之一包括高温计以测量所述介电盘的温度。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811152060.XA CN109585252B (zh) | 2013-12-18 | 2014-12-08 | 可旋转加热静电夹盘 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361917921P | 2013-12-18 | 2013-12-18 | |
US61/917,921 | 2013-12-18 | ||
US14/560,744 | 2014-12-04 | ||
US14/560,744 US9853579B2 (en) | 2013-12-18 | 2014-12-04 | Rotatable heated electrostatic chuck |
PCT/US2014/069040 WO2015094750A1 (en) | 2013-12-18 | 2014-12-08 | Rotatable heated electrostatic chuck |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811152060.XA Division CN109585252B (zh) | 2013-12-18 | 2014-12-08 | 可旋转加热静电夹盘 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105874585A CN105874585A (zh) | 2016-08-17 |
CN105874585B true CN105874585B (zh) | 2019-01-04 |
Family
ID=53369382
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480067593.1A Active CN105874585B (zh) | 2013-12-18 | 2014-12-08 | 可旋转加热静电夹盘 |
CN201811152060.XA Active CN109585252B (zh) | 2013-12-18 | 2014-12-08 | 可旋转加热静电夹盘 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811152060.XA Active CN109585252B (zh) | 2013-12-18 | 2014-12-08 | 可旋转加热静电夹盘 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9853579B2 (zh) |
EP (1) | EP3084819B1 (zh) |
JP (1) | JP6530755B2 (zh) |
KR (1) | KR102243410B1 (zh) |
CN (2) | CN105874585B (zh) |
SG (1) | SG11201604062WA (zh) |
TW (1) | TWI649833B (zh) |
WO (1) | WO2015094750A1 (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9888528B2 (en) | 2014-12-31 | 2018-02-06 | Applied Materials, Inc. | Substrate support with multiple heating zones |
JP6655310B2 (ja) * | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
TWI725067B (zh) * | 2015-10-28 | 2021-04-21 | 美商應用材料股份有限公司 | 可旋轉靜電夾盤 |
US10460969B2 (en) * | 2016-08-22 | 2019-10-29 | Applied Materials, Inc. | Bipolar electrostatic chuck and method for using the same |
US10784139B2 (en) * | 2016-12-16 | 2020-09-22 | Applied Materials, Inc. | Rotatable electrostatic chuck having backside gas supply |
US10573498B2 (en) * | 2017-01-09 | 2020-02-25 | Applied Materials, Inc. | Substrate processing apparatus including annular lamp assembly |
US20180213608A1 (en) * | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Electrostatic chuck with radio frequency isolated heaters |
KR102371870B1 (ko) * | 2017-03-09 | 2022-03-07 | 에베 그룹 에. 탈너 게엠베하 | 정전식 기판 홀더 |
JP6605061B2 (ja) * | 2017-07-07 | 2019-11-13 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
US10811296B2 (en) * | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
US11149345B2 (en) | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN113169026B (zh) | 2019-01-22 | 2024-04-26 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
KR20200122486A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 웨이퍼 클리닝 장치 |
USD893441S1 (en) | 2019-06-28 | 2020-08-18 | Applied Materials, Inc. | Base plate for a processing chamber substrate support |
KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
CN113832450A (zh) * | 2020-06-24 | 2021-12-24 | 拓荆科技股份有限公司 | 用于晶圆自动升降旋转的方法及设备 |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
USD947914S1 (en) | 2020-11-23 | 2022-04-05 | Applied Materials, Inc. | Base plate for a processing chamber substrate support |
US11815816B2 (en) * | 2021-02-15 | 2023-11-14 | Applied Materials, Inc. | Apparatus for post exposure bake of photoresist |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US20220384194A1 (en) * | 2021-05-28 | 2022-12-01 | Applied Materials, Inc. | Apparatus for generating magnetic fields on substrates during semiconductor processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
WO2023091629A2 (en) * | 2021-11-22 | 2023-05-25 | Cvd Equipment Corporation | Improvements in chemical vapor deposition systems |
US20230282506A1 (en) * | 2022-03-02 | 2023-09-07 | Applied Materials, Inc. | Biasable rotating pedestal |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US6462928B1 (en) * | 1999-05-07 | 2002-10-08 | Applied Materials, Inc. | Electrostatic chuck having improved electrical connector and method |
JP2003133233A (ja) * | 2001-10-23 | 2003-05-09 | Hitachi Kokusai Electric Inc | 基板処理装置 |
TW200807606A (en) * | 2006-04-27 | 2008-02-01 | Applied Materials Inc | Substrate support with electrostatic chuck having dual temperature zones |
CN102105253A (zh) * | 2008-07-23 | 2011-06-22 | 东京毅力科创株式会社 | 高温静电卡盘和使用方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0478133A (ja) * | 1990-07-20 | 1992-03-12 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH05198390A (ja) * | 1992-01-22 | 1993-08-06 | Jeol Ltd | 高周波プラズマ装置 |
JP3186008B2 (ja) * | 1994-03-18 | 2001-07-11 | 株式会社日立製作所 | ウエハ保持装置 |
JP3089150B2 (ja) * | 1993-10-19 | 2000-09-18 | キヤノン株式会社 | 位置決めステージ装置 |
JP4335981B2 (ja) * | 1998-01-16 | 2009-09-30 | キヤノンアネルバ株式会社 | 高温リフロースパッタリング方法及び高温リフロースパッタリング装置 |
US6081414A (en) * | 1998-05-01 | 2000-06-27 | Applied Materials, Inc. | Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system |
JP2000150394A (ja) * | 1998-11-17 | 2000-05-30 | Toshiba Corp | 基板処理装置及び基板位置合わせ装置 |
JP4493756B2 (ja) * | 1999-08-20 | 2010-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US6554905B1 (en) | 2000-04-17 | 2003-04-29 | Asm America, Inc. | Rotating semiconductor processing apparatus |
JP4554065B2 (ja) * | 2000-12-19 | 2010-09-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR100427459B1 (ko) * | 2001-09-05 | 2004-04-30 | 주성엔지니어링(주) | 아크 방지용 정전척 |
US20030154922A1 (en) * | 2002-02-19 | 2003-08-21 | Nathan House | C-chuck insulator strip |
US6875927B2 (en) * | 2002-03-08 | 2005-04-05 | Applied Materials, Inc. | High temperature DC chucking and RF biasing cable with high voltage isolation for biasable electrostatic chuck applications |
JP4031691B2 (ja) * | 2002-09-20 | 2008-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
US20080084650A1 (en) * | 2006-10-04 | 2008-04-10 | Applied Materials, Inc. | Apparatus and method for substrate clamping in a plasma chamber |
WO2008069259A1 (en) * | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device |
US8941037B2 (en) * | 2006-12-25 | 2015-01-27 | Tokyo Electron Limited | Substrate processing apparatus, focus ring heating method, and substrate processing method |
JP4833143B2 (ja) * | 2007-04-19 | 2011-12-07 | 株式会社日立国際電気 | 基板処理装置 |
JP5280459B2 (ja) * | 2008-12-25 | 2013-09-04 | キヤノンアネルバ株式会社 | スパッタリング装置 |
JP5451895B2 (ja) * | 2010-10-07 | 2014-03-26 | キヤノンアネルバ株式会社 | 基板処理装置 |
US20120222618A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Dual plasma source, lamp heated plasma chamber |
JP2012186245A (ja) * | 2011-03-04 | 2012-09-27 | Tokyo Electron Ltd | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
US9793144B2 (en) | 2011-08-30 | 2017-10-17 | Evatec Ag | Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer |
KR20140108267A (ko) * | 2011-12-15 | 2014-09-05 | 캐논 아네르바 가부시키가이샤 | 기판 홀더 장치 및 진공 처리 장치 |
WO2013111363A1 (ja) * | 2012-01-26 | 2013-08-01 | 京セラ株式会社 | 静電チャック |
US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
US8906810B2 (en) * | 2013-05-07 | 2014-12-09 | Lam Research Corporation | Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization |
JP6088346B2 (ja) * | 2013-05-09 | 2017-03-01 | 新光電気工業株式会社 | 静電チャック及び半導体製造装置 |
-
2014
- 2014-12-04 US US14/560,744 patent/US9853579B2/en active Active
- 2014-12-08 TW TW103142630A patent/TWI649833B/zh active
- 2014-12-08 CN CN201480067593.1A patent/CN105874585B/zh active Active
- 2014-12-08 CN CN201811152060.XA patent/CN109585252B/zh active Active
- 2014-12-08 KR KR1020167018839A patent/KR102243410B1/ko active IP Right Grant
- 2014-12-08 SG SG11201604062WA patent/SG11201604062WA/en unknown
- 2014-12-08 WO PCT/US2014/069040 patent/WO2015094750A1/en active Application Filing
- 2014-12-08 EP EP14872752.2A patent/EP3084819B1/en active Active
- 2014-12-08 JP JP2016541378A patent/JP6530755B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
US6462928B1 (en) * | 1999-05-07 | 2002-10-08 | Applied Materials, Inc. | Electrostatic chuck having improved electrical connector and method |
JP2003133233A (ja) * | 2001-10-23 | 2003-05-09 | Hitachi Kokusai Electric Inc | 基板処理装置 |
TW200807606A (en) * | 2006-04-27 | 2008-02-01 | Applied Materials Inc | Substrate support with electrostatic chuck having dual temperature zones |
CN102105253A (zh) * | 2008-07-23 | 2011-06-22 | 东京毅力科创株式会社 | 高温静电卡盘和使用方法 |
Also Published As
Publication number | Publication date |
---|---|
SG11201604062WA (en) | 2016-07-28 |
CN109585252A (zh) | 2019-04-05 |
US20150170952A1 (en) | 2015-06-18 |
KR102243410B1 (ko) | 2021-04-21 |
US9853579B2 (en) | 2017-12-26 |
TWI649833B (zh) | 2019-02-01 |
EP3084819B1 (en) | 2018-08-15 |
JP2017502514A (ja) | 2017-01-19 |
CN109585252B (zh) | 2021-05-07 |
EP3084819A4 (en) | 2017-05-17 |
KR20160098388A (ko) | 2016-08-18 |
WO2015094750A1 (en) | 2015-06-25 |
EP3084819A1 (en) | 2016-10-26 |
CN105874585A (zh) | 2016-08-17 |
TW201528424A (zh) | 2015-07-16 |
JP6530755B2 (ja) | 2019-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105874585B (zh) | 可旋转加热静电夹盘 | |
EP3369109B1 (en) | Biasable rotatable electrostatic chuck | |
CN103081088B (zh) | 静电夹盘和使用静电夹盘的方法 | |
EP3555910B1 (en) | Rotatable electrostatic chuck having backside gas supply | |
KR102498784B1 (ko) | 고온 rf 애플리케이션들을 위한 정전 척 | |
US9947559B2 (en) | Thermal management of edge ring in semiconductor processing | |
CN110191975A (zh) | 用于处理基板的方法及设备 | |
KR101344220B1 (ko) | 스퍼터 장치 | |
CN107004628B (zh) | 用于高温rf应用的静电吸盘 | |
CN116490964A (zh) | 用于半导体加工的高热量损失加热器与静电卡盘 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |