CN110191975A - 用于处理基板的方法及设备 - Google Patents
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Abstract
本文揭露了用于使基板退火的方法及设备的实施方式。在一些实施方式中,基板支撑件包括:基板支撑底座,所述基板支撑底座具有支撑基板的上表面及相对的底表面,其中所述基板支撑底座由对辐射透明的材料形成;灯组件,所述灯组件设置在所述基板支撑底座下方且具有被配置成加热所述基板的多个灯;底座支撑件,所述底座支撑件延伸穿过所述灯组件以用与所述多个灯间隔开的关系来支撑所述基板支撑底座;轴,所述轴耦接至所述底座支撑件的与第一端相对的第二端;及旋转组件,所述旋转组件与所述底座支撑件相对而耦接至所述轴,以相对于所述灯组件旋转所述轴、所述底座支撑件及所述基板支撑底座。
Description
技术领域
本公开内容的实施方式大体涉及半导体基板处理。
背景技术
基板上的一些装置(例如,STT-RAM)的形成需要在诸如物理气相沉积(PVD)腔室之类的沉积腔室中沉积的多层薄膜。在一些实施方式中,在沉积处理期间需要旋转基板,以获得良好的膜均匀性。例如,当沉积处理使用相对于基板而离轴设置的多个阴极和靶来沉积不同材料时,需要旋转基板以确保良好的膜均匀性。一些层的沉积还可能需要基板处于低温并随后退火。然而,典型的基板支撑件包括当被加热到高温时保持温度的底座。因此,在进行任何进一步的低温处理之前,必须让底座冷却。结果,产量受到负面影响。
为了避免此种腔室停机时间,可将基板转移至单独的退火腔室,该退火腔室可耦接至与PVD腔室相同的群集工具。然而,本发明人已观察到需要原位退火以提高PVD腔室的产量。本发明人亦已观察到需要一种以比常规退火腔室更均匀的方式来加热基板的异位退火腔室。
因此,本发明人提供了用于处理基板的改进的方法及设备的实施方式。
发明内容
本文揭露了用于处理基板的方法及设备的实施方式。在一些实施方式中,一种基板支撑件包括:基板支撑底座,所述基板支撑底座具有支撑基板的上表面及相对的底表面,其中所述基板支撑底座由对辐射透明的材料形成;灯组件,所述灯组件设置在所述基板支撑底座下方且具有被配置成加热所述基板的多个灯,其中所述灯组件包括中心孔;底座支撑件,所述底座支撑件延伸穿过所述中心孔且在所述底座支撑件的第一端处耦接至所述基板支撑底座的所述底表面,以用与所述多个灯间隔开的关系来支撑所述基板支撑底座;轴,所述轴耦接至所述底座支撑件的与所述第一端相对的第二端;及旋转组件,所述旋转组件与所述底座支撑件相对而耦接至所述轴,以相对于所述灯组件旋转所述轴、所述底座支撑件及所述基板支撑底座。
在一些实施方式中,一种基板退火腔室包括:腔室主体,所述腔室主体具有腔室壁和内部容积;灯组件,所述灯组件设置在所述内部容积中且具有被配置成加热基板的多个灯,其中所述灯组件耦接至支撑所述灯组件的轴;多个升降销,所述多个升降销延伸穿过所述灯组件,以用与所述多个灯间隔开的关系来支撑所述基板;狭缝阀,所述狭缝阀被设置成穿过所述腔室主体的壁且在所述灯组件上方以允许所述基板进出所述内部容积;环形灯组件,所述环形灯组件具有设置在所述狭缝阀上方的所述基板退火腔室的上部分中的至少一个灯;及顶部反射器,所述顶部反射器设置在所述环形灯组件上方,以向下朝向所述灯组件反射辐射。
在一些实施方式中,一种处理基板的方法包括以下步骤:接收待处理的基板;将所述基板抬起至处理位置;溅射溅射靶以沉积材料于所述基板上;及快速加热所述基板以使沉积在所述基板上的所述材料退火。
下文描述了本公开内容的其他及进一步的实施方式。
附图说明
通过参考在附图中描绘的本公开内容的说明性实施方式,可理解上文简要概述并于下文更详细论述的本公开内容的实施方式。然而,附图仅示出了本公开内容的典型实施方式,因此不应被认为是对范围的限制,因为本公开内容可允许其他等效的实施方式。
图1描绘了根据本公开内容的一些实施方式的具有可旋转基板支撑件的处理腔室的示意图。
图2描绘了根据本公开内容的一些实施方式的可旋转基板支撑件的上部分的截面图。
图3描绘了根据本公开内容的一些实施方式的基板加热设备的俯视图。
图4描绘了根据本公开内容的一些实施方式的退火腔室的示意性截面图。
图4A至图4B描绘了根据本公开内容的一些实施方式的用于退火腔室中的环形灯的示意图。
图5为描绘根据本公开内容的一些实施方式的处理基板的方法的流程图。
为了便于理解,已尽可能地使用相同的参考符号来表示各图共有的相同元件。这些图未按比例绘制,且可能为了清晰起见而被简化。一个实施方式的元件及特征可有益地并入其他实施方式中而无需进一步详述。
具体实施方式
本文提供了用于处理基板的方法及设备的实施方式。在一些实施方式中,提供了有利地允许对基板进行原位退火的基板支撑底座,从而通过减少将基板传送至异位退火腔室所导致的停机时间来提高处理系统的产量。本公开内容的实施方式进一步提供了有利地提供更均匀的基板加热的退火腔室。本发明的方法及设备通过减少将基板传送至异位退火腔室所需的停机时间或通过减少退火时间来有利地提高产量。本发明的基板支撑底座可耦接至用作为静电吸盘的现有的基板支撑件,以有利地允许在具有吸附电极以吸附基板的底座与如本文所述的可用于使基板退火的底座之间进行容易的切换。
图1为根据本公开内容的一些实施方式的等离子体处理腔室的示意性截面图。在一些实施方式中,等离子体处理腔室为物理气相沉积(PVD)处理腔室。然而,其他类型的处理腔室亦可使用本文描述的本发明的基板支撑件的实施方式或被修改以与所述基板支撑件的实施方式一起使用。
腔室100为真空腔室,所述真空腔室经适当地调适以在基板处理期间于腔室内部容积120内维持低于大气压的压力。腔室100包括由盖104覆盖的腔室主体106,盖104包围位于腔室内部容积120的上半部分中的处理容积119。腔室100亦可包括一或多个屏蔽件105,一或多个屏蔽件105围绕各种腔室部件以防止在这些部件与离子化的处理材料之间的不希望的反应。腔室主体106及盖104可由金属(诸如铝)制成。腔室主体106可通过耦接至接地115而接地。
基板支撑件124设置在腔室内部容积120内,以支撑及保持基板S(诸如半导体晶片或举例而言其他此类基板)。基板支撑件124通常可包括基板支撑件150(下文参考图2更详细地描述)及用于支撑基板支撑件150的中空支撑轴112。中空支撑轴112提供导管以提供例如处理气体、流体、冷却剂、功率或类似物至基板支撑件150。
在一些实施方式中,中空支撑轴112耦接至作为旋转组件的马达113以旋转中空支撑轴112,及可选地耦接至垂直升降机以提供基板支撑件150在上部的处理位置(如图1所示)与下部的传送位置(未示出)之间的垂直移动。波纹管组件110围绕中空支撑轴112设置,且所述波纹管组件110耦接在基板支撑件150与腔室100的底表面126之间以提供柔性密封,所述柔性密封允许基板支撑件150的垂直运动,同时防止腔室100内的真空损失。波纹管组件110亦包括下部波纹管凸缘164,所述下部波纹管凸缘164与接触底表面126的O形环165或其他合适的密封元件接触,以帮助防止腔室真空的损失。
当需要时,中空支撑轴112提供用于将流体源142、气体供应源141、电源140及RF源(例如,RF偏压电源117)耦接至基板支撑件150的导管。在一些实施方式中,RF偏压电源117经由RF匹配网路116耦接至基板支撑件。然而,在一些实施方式中,且如从以下描述中将显而易见地,当基板支撑件使用于例如如下描述的退火处理时可省略延伸穿过中空支撑轴112的一些元件。
基板升降机130可包括安装在平台108上的升降销109,平台108连接至轴111,轴111耦接至第二升降机构132以用于升高及降低基板升降机130,使得基板“S”可放置在基板支撑件150上或可从基板支撑件150移除。基板支撑件150包括通孔(描述于下文)以接收升降销109。波纹管组件131耦接在基板升降机130与底表面126之间以提供柔性密封,所述柔性密封在基板升降机130的垂直运动期间维持腔室真空。
腔室100耦接至真空系统114,并与真空系统114流体连通,真空系统114包括用于将腔室100排气的节流阀(未示出)和真空泵(未示出)。可通过调整节流阀和/或真空泵来调节腔室100内的压力。腔室100亦耦接至处理气体供应源118并与处理气体供应源118流体连通,处理气体供应装置118可将一或多种处理气体供应至腔室100以用于处理设置在腔室100中的基板。
在操作中,例如,可在腔室内部容积120中产生等离子体102以执行一或多个处理。可通过将来自等离子体电源(例如,RF等离子体电源170)的功率经由靠近腔室内部容积120或在腔室内部容积120内的一或多个电极耦合至处理气体以点燃处理气体并产生等离子体102来产生等离子体102。在一些实施方式中,亦可经由电容耦合偏压板(描述于下文)从偏压电源(例如,RF偏压电源117)将偏压功率提供至设置在基板支撑件150内的一或多个电极(描述于下文)以朝向基板S吸引来自等离子体的离子。
在一些实施方式中,例如,在腔室100是PVD腔室的实施方式中,包括待沉积在基板S上的源材料的靶166可设置在基板上方及在腔室内部容积120内。靶166可由腔室100的接地导电部分(例如,穿过介电隔离器的铝配接器)支撑。在其他实施方式中,腔室100可包括多阴极布置中的多个靶,以使用同一腔室来沉积不同材料的层。
可控制的DC电源168可耦接至腔室100以向靶166施加负电压或偏压。RF偏压电源117可耦接至基板支撑件124以便在基板S上引起负DC偏压。此外,在一些实施方式中,在处理期间可在基板S上形成负DC自偏压。在一些实施方式中,RF等离子体电源170亦可耦接至腔室100,以将RF功率施加至靶166,以便于控制基板S上的沉积速率的径向分布。在操作中,在腔室100中所产生的等离子体102中的离子与来自靶166的源材料反应。此反应使靶166喷射源材料的原子,接着这些原子被引向基板S,从而沉积材料。
图2描绘了根据本公开内容的一些实施方式的基板支撑件200的顶部部分的截面图。基板支撑件200可用作为图1中所示的基板支撑件124。基板支撑件200包括基板支撑底座202、从基板支撑底座202的底部延伸的轴204及包围基板支撑底座202、轴204及基板支撑件200的所有部件(描述于下文)的外壳206。
基板支撑底座202由对辐射(所述辐射在处理期间用于加热基板)透明的材料形成,使得设置在基板支撑底座202的上表面225顶部上的基板可被加热而基板支撑底座202不会吸收大部分热。由于传统底座吸收大量热,故放置在之前加热的底座上的冷基板立即被底座加热。结果,可能不会执行需要低温的处理,直到底座冷却为止。然而,因本发明的底座允许热穿过底座,故可在已在本发明的底座上执行退火后立即执行低温处理。此外,基板退火的升温速率显着增大,且所述升温速率可在约22℃/秒与约35℃/秒之间。在一些实施方式中,基板支撑底座202可为石英板。在一些实施方式中,基板支撑底座202可具有在约5mm与约7mm之间的厚度T1。
基板支撑件200亦可包括位于基板支撑底座202附近(例如,在基板支撑底座202的约3英寸内)的轴承218,以在旋转期间为基板支撑件200提供增加的刚性。轴承218可包括例如交叉滚子轴承或类似轴承。
为了便于加热设置在基板支撑底座202上的基板,基板支撑件200包括灯组件278,灯组件278包括多个灯214。在一些实施方式中,灯组件278可包括反射板216,所述反射板216由反射材料形成或涂覆有反射材料,以朝着基板支撑底座202向上反射热。例如,反射板216可由抛光铝或不锈钢形成。多个灯214包括能经由辐射发射足够的热以加热基板支撑底座202的任何数量及类型的灯。例如,多个灯214可包括卤素灯。在一些实施方式中,多个灯214的总功率输出在约2.25千瓦(kW)与约9.5kW之间。
多个灯214从设置在介电板203(如陶瓷板)中的多个导体205接收电力。导体205可经由加热器电力线(例如,导体)223、224而从电源140或从另一电源(未示出)接收电力。在一些实施方式中,介电层213可设置在介电板203顶部上以保护导体205及防止导体205与基板支撑件200的任何其他导电元件之间的意外接触。介电层213中提供开口以助于将导体205耦接至相应的灯214。在一些实施方式中,可将多个灯分成多个区域,例如,内部灯阵列及可独立控制的外部灯阵列。
如上所述,在启动多个灯214时产生热且设置在基板支撑底座202上的物被加热。由于热沿每个方向发射,故在外壳206中形成多个流体通道215以保持外壳206冷却。任何合适的冷却剂(例如,水、丙二醇或类似物)可流过流体通道215以冷却外壳206。
为了便于基板在基板支撑底座202上的放置及移除,基板支撑件200亦可包括升降销组件,所述升降销组件包括多个升降销201以将基板举离基板支撑底座202及降低至基板支撑底座202上。在一些实施方式中,多个升降销201中的至少一者可包括用以测量基板支撑底座202的温度的高温计。然而,高温计可设置在任何其他适于测量基板温度的位置。
基板支撑件200进一步包括底座支撑件222,基板支撑底座202可移除地耦接至所述底座支撑件222。在一些实施方式中,底座支撑件222包括与多个吸附电力线228对应且耦接至所述多个吸附电力线228的多个电接头(图示两个电接头209、211)。多个电接头可耦接至用于静电吸附基板的底座中的吸附电极。然而,在基板支撑底座202中不存在吸附电极的实施方式中,多个电接头不与任何物耦接,因而不使用所述多个电接头。
在一些实施方式中,可围绕底座支撑件222设置金属套筒207,以保护多个电接头免受由多个灯214发射的辐射的影响。在一些实施方式中,金属套筒可由铝形成。在一些实施方式中,底座支撑件312可由氧化铝形成。
在一些实施方式中,底座支撑件222可包括中心通道220,中心通道220设置成从第一端217到第二端212而穿过底座支撑件222,以用于在需要背侧气体时提供背侧气体。然而,在图2所示的基板支撑底座202中,未使用背侧气体,因此基板支撑底座202不包括允许背侧气体从中心通道220穿过基板支撑底座202的开口。中心通道220流体耦接至导管221,导管221设置在轴204内并流体耦接至气体供应源141。在一些实施方式中,动态密封O形环226设置在导管221的外壁与中心通道220的内壁之间。动态密封O形环226提供动态密封以防止在底座支撑件222围绕静止导管221旋转期间任何背侧气体泄漏。在未使用的实施方式中,不需要提供中心通道220和导管221。然而,提供中心通道220和导管221有助于在基板支撑底座202与其他支撑件(如静电吸盘)之间的快速切换,而无需从处理腔室移除整个基板支撑件200。
底座支撑件222在第一端217处耦接至基板支撑底座202的底表面及在第二端212处耦接至轴204。底座支撑件222以与多个灯214间隔开的关系支撑基板支撑底座202。如上所述,基板支撑底座202可移除地耦接至基板支撑件,使得不同底座之间的切换相对简单。因此,在一些实施方式中,基板支撑底座202可包括延伸穿过基板支撑底座202的多个安装孔255以容纳多个相对应的固定元件(诸如螺栓、螺钉、夹具或类似物),以有利地助于以更容易可移除及可替换的方式将基板支撑底座202耦接至底座支撑件222。底座支撑件222包括与多个安装孔255相对应的多个盲孔219,以接收固定元件的端部以便于耦接。基板支撑底座202进一步包括多个升降销孔258,升降销201穿过所述多个升降销孔延伸以将基板提升离开基板支撑底座202或接收待处理的基板。
图3描绘了具有多个灯214的灯组件278的俯视图。如上所述,多个灯214加热设置在基板支撑底座202顶上的基板。灯组件278亦包括中心孔302(底座支撑件222延伸穿过所述中心孔302)及多个孔270以允许多个升降销201穿过灯组件278。虽然以特定配置示出,但灯的形状及数量可变化以在基板支撑底座202上提供期望的热分布。在一些实施方式中,多个灯214包括内部灯阵列306及可独立控制的外部灯阵列304。
图4描绘了根据本公开内容的一些实施方式的基板退火腔室400的截面图。基板退火腔室400可被配置成安装至群集工具,且在一些实施方式中,基板退火腔室400可安装至具有亦安装到其上的另一个处理腔室(诸如物理气相沉积腔室)的群集工具,以有利地助于将基板从沉积腔室快速传送至退火腔室且不暴露于大气。
在一些实施方式中,基板退火腔室400包括具有腔室壁405、设置在腔室壁405顶部上的上部加热组件460及内部容积407的腔室主体404。支撑组件480设置在内部容积407内。在一些实施方式中,支撑组件480包括设置在轴410上的灯组件470,灯组件470具有多个灯417。为了便于基板传送进出基板退火腔室400,狭缝阀412形成在灯组件470上方的腔室壁405中。多个升降销414延伸穿过灯组件470以用与多个灯417间隔开的关系支撑基板。
在一些实施方式中,上部加热组件460包括设置在狭缝阀412上方的基板退火腔室400的上部分中的环形灯组件430。环形灯组件430包括设置在上部环形反射器434与下部环形反射器436之间的至少一个灯432。在一些实施方式中,上部环形反射器434设置在由腔室壁405支撑的下部环形反射器436上。在使用中,由至少一个灯432在每个方向上发射辐射。朝向下部环形反射器436发射的辐射朝上部环形反射器434向上反射,上部环形反射器434朝向设置在多个升降销414顶部上的基板向下反射辐射。
在一些实施方式中,使用从上部环形反射器434延伸的多个钩形臂438来支撑至少一个灯432。上部环形反射器434及下部环形反射器436被配置成朝向设置在多个升降销414顶部上的基板反射来自至少一个灯432的辐射。为了促进环形反射器的反射率,上部环形反射器及下部环形反射器可由抛光材料(诸如例如不锈钢)形成。在基板退火腔室400的操作温度低于600℃的实施方式中,环形反射器可替代地由铝形成。在一些实施方式中,下部环形反射器可包括环形冷却剂通道440,冷却剂流经所述环形冷却剂通道440以将下部环形反射器的温度维持在期望温度或低于期望温度。在一些实施方式中,基板退火腔室可包括至少一个高温计448,所述至少一个高温计448被配置成测量设置在多个升降销414顶部上的基板的温度,以提供反馈以控制退火处理。
在一些实施方式中,上部加热组件460进一步包括顶部反射器444,所述顶部反射器444设置在环形灯组件430上方且被配置成朝向设置在多个升降销414顶部上的基板(即,朝向灯组件470)向下反射辐射。顶部反射器444和腔室壁405限定基板退火腔室400的内部容积407。帽446可设置在上部加热组件460顶部上以用作为上部加热组件460的潜在高温部件与周围环境之间的阻障物。多个O形环450可设置在各种部件的界面处(例如,在上部加热组件460与腔室壁405之间、在帽446与上部加热组件460之间等),以确保部件之间的适当密封。
支撑组件480的其余部分类似于上述的基板支撑件200。例如,在一些实施方式中,多个灯417从设置在介电板402(如陶瓷板)中的多个导体403接收电力。导体403可经由加热器电力线(例如导体)420、424而从电源(未示出,但类似于电源140)或从另一电源(未示出)接收电力。在一些实施方式中,介电层422可设置在介电板402顶部上以保护导体403,及防止导体403与支撑组件480的任何其他导电元件之间的意外接触。支撑组件480亦可包括冷却剂通道425,冷却剂流经所述冷却剂通道425以将支撑组件480的温度保持在期望的温度。
灯组件470基本上类似于上文论述的且在图3中示出的灯组件278。因此,为了简洁起见,在此将省略对灯组件470的进一步论述。
图4A及4B描绘了根据本公开内容的一些实施方式的至少一个灯432的示意图。在一些实施方式中,且如图4A所示,至少一个灯432可包括一个环形灯,所述环形灯具有要耦接至电源(未示出)的相应正极端和负极端的正极引线433和负极引线435。在一些实施方式中,且如图4B所示,至少一个灯可替代地包括具有相对应的正极引线433A、433B和负极引线435A、435B的两个半圆形灯432A和432B。
图5为描绘根据本公开内容的一些实施方式的处理基板的方法500的流程图。在502处,待处理的基板被接收在处理腔室(例如腔室100)中的基板支撑件上。在504处,基板被抬起至处理位置。在506处,溅射至少一个溅射靶以在基板上沉积材料。在508处,快速加热基板以使沉积在基板上的材料退火。
在一些实施方式中,在同一腔室中执行溅射及快速加热。例如,如上文关于基板支撑件200所解释的,基板支撑底座202由对辐射透明的材料(例如石英)形成,且基板通过设置在基板支撑底座202下方的多个灯214加热。因此,即使处理温度低(例如,处于室温或接近室温),仍可处理基板并接着在同一腔室中使所述基板退火。
在一些实施方式中,溅射及快速加热在不同腔室中进行。例如,且如上文关于基板退火腔室400所解释的,将基板传送至基板退火腔室400,并使用设置在基板上方的环形灯组件430自上方及使用设置在基板下方的多个灯417自下方加热所述基板。多个反射器(例如,上部环形反射器434、下部环形反射器436、顶部反射器444及灯组件反射板)被配置成朝向基板反射辐射。
虽然前述内容针对本公开内容的实施方式,但可在不背离本公开内容的基本范围的情况下设计本公开内容的其他及进一步的实施方式。
Claims (15)
1.一种基板支撑件,包括:
基板支撑底座,所述基板支撑底座具有支撑基板的上表面及相对的底表面,其中所述基板支撑底座由对辐射透明的材料形成;
灯组件,所述灯组件设置在所述基板支撑底座下方且具有被配置成加热所述基板的多个灯,其中所述灯组件包括中心孔;
底座支撑件,所述底座支撑件延伸穿过所述中心孔且在所述底座支撑件的第一端处耦接至所述基板支撑底座的所述底表面,以用与所述多个灯间隔开的关系来支撑所述基板支撑底座;
轴,所述轴耦接至所述底座支撑件的与所述第一端相对的第二端;及
旋转组件,所述旋转组件与所述底座支撑件相对而耦接至所述轴,以相对于所述灯组件旋转所述轴、所述底座支撑件及所述基板支撑底座。
2.如权利要求1所述的基板支撑件,其中所述基板支撑底座由石英形成。
3.如权利要求1所述的基板支撑件,其中基板支撑底座具有约5mm与约7mm之间的厚度。
4.如权利要求1至3中任一项所述的基板支撑件,其中所述多个灯包括卤素灯且具有在约2.25kW与约9.5kW之间的总功率输出。
5.如权利要求1至3中任一项所述的基板支撑件,其中所述多个灯包括内部灯阵列及能独立控制的外部灯阵列。
6.如权利要求1至3中任一项所述的基板支撑件,其中所述灯组件包括反射板,所述反射板设置在所述多个灯下方且被配置成朝向所述基板支撑底座反射来自所述多个灯的辐射。
7.一种基板退火腔室,包括:
腔室主体,所述腔室主体具有腔室壁和内部容积;
灯组件,所述灯组件设置在所述内部容积中且具有被配置成加热基板的多个灯,其中所述灯组件耦接至支撑所述灯组件的轴;
多个升降销,所述多个升降销延伸穿过所述灯组件,以用与所述多个灯间隔开的关系来支撑所述基板;
狭缝阀,所述狭缝阀被设置成穿过所述腔室主体的壁且在所述灯组件上方以允许所述基板进出所述内部容积;
环形灯组件,所述环形灯组件具有设置在所述狭缝阀上方的所述基板退火腔室的上部分中的至少一个灯;及
顶部反射器,所述顶部反射器设置在所述环形灯组件上方,以向下朝向所述灯组件反射辐射。
8.如权利要求7所述的基板退火腔室,其中所述至少一个灯包括以下至少之一:
一个环形灯;或
沿着圆布置的两个半圆形灯。
9.如权利要求7所述的基板退火腔室,其中所述环形灯组件包括设置在所述至少一个灯上方的上部环形反射器和设置在所述至少一个灯下方的下部环形反射器,并且其中所述上部环形反射器和所述下部环形反射器被配置成朝向设置在所述多个升降销顶部上的基板反射来自所述至少一个灯的辐射。
10.如权利要求9所述的基板退火腔室,其中所述下部环形反射器包括环形冷却剂通道。
11.如权利要求7至10中任一项所述的基板退火腔室,其中所述顶部反射器和所述腔室壁限定所述内部容积。
12.如权利要求7至10中任一项所述的基板退火腔室,其中所述多个灯包括卤素灯且具有在约2.25kW与约9.5kW之间的总功率输出。
13.如权利要求12所述的基板退火腔室,其中所述多个灯包括内部灯阵列及能独立控制的外部灯阵列。
14.如权利要求7至10中任一项所述的基板退火腔室,其中所述灯组件包括反射板,所述反射板设置在所述多个灯下方且被配置成朝向所述基板反射来自所述多个灯的辐射。
15.一种处理基板的方法,包括以下步骤:
接收待处理的基板;
将所述基板抬起至处理位置;
溅射溅射靶以在所述基板上沉积材料;及
快速加热所述基板以使沉积在所述基板上的所述材料退火,
其中:
快速加热的步骤与所述溅射的步骤在同一腔室中执行,并且其中所述基板设置在石英板上且通过设置在所述石英板下方的多个灯而被快速加热;或者
快速加热的步骤与所述溅射的步骤在不同腔室中执行,并且快速加热的步骤进一步包括将所述基板传送至退火腔室以快速加热所述基板,所述退火腔室具有设置在所述基板上方的环形灯组件、设置在所述基板下方的多个灯及被配置成朝向所述基板反射辐射的多个反射器。
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US15/402,142 US10573498B2 (en) | 2017-01-09 | 2017-01-09 | Substrate processing apparatus including annular lamp assembly |
PCT/US2018/012191 WO2018129049A1 (en) | 2017-01-09 | 2018-01-03 | Method and apparatus for processing a substrate |
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KR (1) | KR20190097294A (zh) |
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US20200161095A1 (en) | 2020-05-21 |
US20180197721A1 (en) | 2018-07-12 |
US10573498B2 (en) | 2020-02-25 |
WO2018129049A1 (en) | 2018-07-12 |
US10978276B2 (en) | 2021-04-13 |
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