JP2017502514A5 - - Google Patents
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- Publication number
- JP2017502514A5 JP2017502514A5 JP2016541378A JP2016541378A JP2017502514A5 JP 2017502514 A5 JP2017502514 A5 JP 2017502514A5 JP 2016541378 A JP2016541378 A JP 2016541378A JP 2016541378 A JP2016541378 A JP 2016541378A JP 2017502514 A5 JP2017502514 A5 JP 2017502514A5
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- lamps
- dielectric disk
- metal plate
- chuck according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361917921P | 2013-12-18 | 2013-12-18 | |
| US61/917,921 | 2013-12-18 | ||
| US14/560,744 | 2014-12-04 | ||
| US14/560,744 US9853579B2 (en) | 2013-12-18 | 2014-12-04 | Rotatable heated electrostatic chuck |
| PCT/US2014/069040 WO2015094750A1 (en) | 2013-12-18 | 2014-12-08 | Rotatable heated electrostatic chuck |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017502514A JP2017502514A (ja) | 2017-01-19 |
| JP2017502514A5 true JP2017502514A5 (enExample) | 2018-01-25 |
| JP6530755B2 JP6530755B2 (ja) | 2019-06-12 |
Family
ID=53369382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016541378A Active JP6530755B2 (ja) | 2013-12-18 | 2014-12-08 | 回転可能な被加熱静電チャック |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9853579B2 (enExample) |
| EP (1) | EP3084819B1 (enExample) |
| JP (1) | JP6530755B2 (enExample) |
| KR (1) | KR102243410B1 (enExample) |
| CN (2) | CN109585252B (enExample) |
| SG (1) | SG11201604062WA (enExample) |
| TW (1) | TWI649833B (enExample) |
| WO (1) | WO2015094750A1 (enExample) |
Families Citing this family (51)
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|---|---|---|---|---|
| US9888528B2 (en) | 2014-12-31 | 2018-02-06 | Applied Materials, Inc. | Substrate support with multiple heating zones |
| JP6655310B2 (ja) * | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| TWI725067B (zh) * | 2015-10-28 | 2021-04-21 | 美商應用材料股份有限公司 | 可旋轉靜電夾盤 |
| US10460969B2 (en) * | 2016-08-22 | 2019-10-29 | Applied Materials, Inc. | Bipolar electrostatic chuck and method for using the same |
| US10784139B2 (en) * | 2016-12-16 | 2020-09-22 | Applied Materials, Inc. | Rotatable electrostatic chuck having backside gas supply |
| US10573498B2 (en) | 2017-01-09 | 2020-02-25 | Applied Materials, Inc. | Substrate processing apparatus including annular lamp assembly |
| US20180213608A1 (en) * | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Electrostatic chuck with radio frequency isolated heaters |
| JP6985399B2 (ja) | 2017-03-09 | 2021-12-22 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 静電式基板保持ユニット |
| JP6605061B2 (ja) * | 2017-07-07 | 2019-11-13 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
| US10811296B2 (en) * | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US11149345B2 (en) * | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| KR20250100790A (ko) | 2019-01-22 | 2025-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| CN111564354B (zh) * | 2019-02-14 | 2024-11-15 | 上海陛通半导体能源科技股份有限公司 | 用于晶圆等离子体刻蚀的方法和设备 |
| KR102699383B1 (ko) | 2019-04-18 | 2024-08-26 | 삼성전자주식회사 | 웨이퍼 클리닝 장치 |
| USD893441S1 (en) | 2019-06-28 | 2020-08-18 | Applied Materials, Inc. | Base plate for a processing chamber substrate support |
| KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
| KR102347145B1 (ko) * | 2020-01-29 | 2022-01-04 | 무진전자 주식회사 | 회전 척에 내장된 광원을 이용한 기판 처리 장치 |
| CN111477569B (zh) * | 2020-04-10 | 2024-02-27 | 北京北方华创微电子装备有限公司 | 一种半导体设备中的加热装置及半导体设备 |
| CN113832450A (zh) * | 2020-06-24 | 2021-12-24 | 拓荆科技股份有限公司 | 用于晶圆自动升降旋转的方法及设备 |
| US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| USD947914S1 (en) | 2020-11-23 | 2022-04-05 | Applied Materials, Inc. | Base plate for a processing chamber substrate support |
| CN112760609B (zh) * | 2020-12-22 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 磁控溅射设备 |
| US11815816B2 (en) * | 2021-02-15 | 2023-11-14 | Applied Materials, Inc. | Apparatus for post exposure bake of photoresist |
| US12112972B2 (en) | 2021-04-02 | 2024-10-08 | Applied Materials, Inc. | Rotating biasable pedestal and electrostatic chuck in semiconductor process chamber |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US20220384194A1 (en) * | 2021-05-28 | 2022-12-01 | Applied Materials, Inc. | Apparatus for generating magnetic fields on substrates during semiconductor processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US12014906B2 (en) * | 2021-11-19 | 2024-06-18 | Applied Materials, Inc. | High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber |
| US20250019832A1 (en) * | 2021-11-22 | 2025-01-16 | Cvd Equipment Corporation | Improvements in chemical vapor deposition systems |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| CN114267625B (zh) * | 2021-12-20 | 2025-06-24 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其承载装置 |
| US20230282506A1 (en) * | 2022-03-02 | 2023-09-07 | Applied Materials, Inc. | Biasable rotating pedestal |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| US12449738B2 (en) * | 2023-06-20 | 2025-10-21 | Applied Materials, Inc. | Rotary substrate support for aligning a substrate |
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|---|---|---|---|---|
| JPH0478133A (ja) * | 1990-07-20 | 1992-03-12 | Tokyo Electron Ltd | プラズマ処理装置 |
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| JPH05198390A (ja) * | 1992-01-22 | 1993-08-06 | Jeol Ltd | 高周波プラズマ装置 |
| JP3186008B2 (ja) * | 1994-03-18 | 2001-07-11 | 株式会社日立製作所 | ウエハ保持装置 |
| JP3089150B2 (ja) * | 1993-10-19 | 2000-09-18 | キヤノン株式会社 | 位置決めステージ装置 |
| JP4335981B2 (ja) * | 1998-01-16 | 2009-09-30 | キヤノンアネルバ株式会社 | 高温リフロースパッタリング方法及び高温リフロースパッタリング装置 |
| US6081414A (en) * | 1998-05-01 | 2000-06-27 | Applied Materials, Inc. | Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system |
| JP2000150394A (ja) * | 1998-11-17 | 2000-05-30 | Toshiba Corp | 基板処理装置及び基板位置合わせ装置 |
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| JP4493756B2 (ja) * | 1999-08-20 | 2010-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
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| JP4554065B2 (ja) * | 2000-12-19 | 2010-09-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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| JP2003133233A (ja) | 2001-10-23 | 2003-05-09 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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| JP4031691B2 (ja) * | 2002-09-20 | 2008-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| JP5069452B2 (ja) * | 2006-04-27 | 2012-11-07 | アプライド マテリアルズ インコーポレイテッド | 二重温度帯を有する静電チャックをもつ基板支持体 |
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| WO2008069259A1 (en) * | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device |
| US8941037B2 (en) * | 2006-12-25 | 2015-01-27 | Tokyo Electron Limited | Substrate processing apparatus, focus ring heating method, and substrate processing method |
| JP4833143B2 (ja) * | 2007-04-19 | 2011-12-07 | 株式会社日立国際電気 | 基板処理装置 |
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| JP5280459B2 (ja) * | 2008-12-25 | 2013-09-04 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| WO2012046397A1 (ja) * | 2010-10-07 | 2012-04-12 | キヤノンアネルバ株式会社 | 基板処理装置 |
| US20120222618A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Dual plasma source, lamp heated plasma chamber |
| JP2012186245A (ja) * | 2011-03-04 | 2012-09-27 | Tokyo Electron Ltd | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
| US9793144B2 (en) | 2011-08-30 | 2017-10-17 | Evatec Ag | Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer |
| JPWO2013088598A1 (ja) * | 2011-12-15 | 2015-04-27 | キヤノンアネルバ株式会社 | 基板ホルダ装置および真空処理装置 |
| CN104067382B (zh) * | 2012-01-26 | 2017-04-26 | 京瓷株式会社 | 静电夹头 |
| US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
| US8906810B2 (en) * | 2013-05-07 | 2014-12-09 | Lam Research Corporation | Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization |
| JP6088346B2 (ja) * | 2013-05-09 | 2017-03-01 | 新光電気工業株式会社 | 静電チャック及び半導体製造装置 |
-
2014
- 2014-12-04 US US14/560,744 patent/US9853579B2/en active Active
- 2014-12-08 WO PCT/US2014/069040 patent/WO2015094750A1/en not_active Ceased
- 2014-12-08 SG SG11201604062WA patent/SG11201604062WA/en unknown
- 2014-12-08 EP EP14872752.2A patent/EP3084819B1/en active Active
- 2014-12-08 CN CN201811152060.XA patent/CN109585252B/zh active Active
- 2014-12-08 CN CN201480067593.1A patent/CN105874585B/zh active Active
- 2014-12-08 KR KR1020167018839A patent/KR102243410B1/ko active Active
- 2014-12-08 TW TW103142630A patent/TWI649833B/zh active
- 2014-12-08 JP JP2016541378A patent/JP6530755B2/ja active Active
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