JP6527997B2 - 蒸着マスクの製造方法 - Google Patents
蒸着マスクの製造方法 Download PDFInfo
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- JP6527997B2 JP6527997B2 JP2018175944A JP2018175944A JP6527997B2 JP 6527997 B2 JP6527997 B2 JP 6527997B2 JP 2018175944 A JP2018175944 A JP 2018175944A JP 2018175944 A JP2018175944 A JP 2018175944A JP 6527997 B2 JP6527997 B2 JP 6527997B2
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- 238000007740 vapor deposition Methods 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000002131 composite material Substances 0.000 claims description 82
- 239000007787 solid Substances 0.000 claims description 63
- 238000000151 deposition Methods 0.000 claims description 42
- 229920005989 resin Polymers 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 42
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- 229910001035 Soft ferrite Inorganic materials 0.000 claims description 37
- 239000004642 Polyimide Substances 0.000 claims description 28
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- 239000000843 powder Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 239000000696 magnetic material Substances 0.000 claims description 20
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- 238000001704 evaporation Methods 0.000 description 6
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- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
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- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
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- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
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- 229910009369 Zn Mg Inorganic materials 0.000 description 1
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- 230000000996 additive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 239000000428 dust Substances 0.000 description 1
- 239000003733 fiber-reinforced composite Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
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- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
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- -1 polyparaxylene Polymers 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M7/00—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock
- B41M7/0072—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock using mechanical wave energy, e.g. ultrasonics; using magnetic or electric fields, e.g. electric discharge, plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0027—Thick magnetic films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/16—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates the magnetic material being applied in the form of particles, e.g. by serigraphy, to form thick magnetic films or precursors therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
- G11B5/70626—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material containing non-metallic substances
- G11B5/70642—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material containing non-metallic substances iron oxides
- G11B5/70678—Ferrites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/714—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the dimension of the magnetic particles
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Soft Magnetic Materials (AREA)
Description
12A 中実部
13A 第1開口部(非中実部)
20A 複合磁性体層
22A 中実部
23A 非中実部(第2開口部)
40A フレーム
100A 蒸着マスク
UA 単位領域
Claims (13)
- 複数の第1開口部を有する高分子を含むベースフィルムと、
前記ベースフィルム上に形成された、中実部と非中実部とを有する複合磁性体層と、
前記ベースフィルムの周縁部に接合されたフレームとを有し、
前記複数の第1開口部は、前記非中実部に対応する領域に形成されており、前記複合磁性体層は、平均粒径が500nm未満のソフトフェライトの粉末と樹脂とを含む、蒸着マスクを製造する方法であって、
高分子を含むベースフィルムおよびフレームを用意する工程Aと、
前記ベースフィルムを前記フレームに固定する工程Bと、
前記工程Bの後に、前記ベースフィルムに複数の第1開口部を形成する工程Cと、
前記工程Cの後に、前記ベースフィルム上に、平均粒径が500nm未満のソフトフェライトの粉末と樹脂とを含む複合磁性体層を形成する工程Dと
を包含する、蒸着マスクの製造方法。 - 前記非中実部は、少なくとも1つの第2開口部を含む、請求項1に記載の蒸着マスクの製造方法。
- 前記少なくとも1つの第2開口部は、複数の第2開口部を含み、前記複数の第2開口部のそれぞれの内側に、前記複数の第1開口部のうちの2以上の第1開口部が形成されている、請求項2に記載の蒸着マスクの製造方法。
- 前記ソフトフェライトの粉末の平均粒径は300nm以下、最小粒径は1nm以上、かつ、最大粒径は500nm未満である、請求項1から3のいずれかに記載の蒸着マスクの製造方法。
- 前記ソフトフェライトの保磁力は100A/m以下である、請求項1から4のいずれかに記載の蒸着マスクの製造方法。
- 前記ソフトフェライトのキュリー温度は250℃未満である、請求項1から5のいずれかに記載の蒸着マスクの製造方法。
- 前記複合磁性体層における前記ソフトフェライトの粉末の体積分率は、15体積%以上80体積%以下である、請求項1から6のいずれかに記載の蒸着マスクの製造方法。
- 前記樹脂は、熱硬化性樹脂を含む、請求項1から7のいずれかに記載の蒸着マスクの製造方法。
- 前記ベースフィルムはポリイミドを含み、前記樹脂は、前記ベースフィルムに含まれるポリイミドと同じ種類のポリイミドを含む、請求項1から8のいずれかに記載の蒸着マスクの製造方法。
- 前記フレームは、非磁性材料で形成されている、請求項1から9のいずれかに記載の蒸着マスクの製造方法。
- 前記工程Bは、前記ベースフィルムを架張する工程を包含する、請求項1から10のいずれかに記載の蒸着マスクの製造方法。
- 前記工程Cと前記工程Dとの間に、前記ベースフィルムを洗浄する工程をさらに包含する、請求項1から11のいずれかに記載の蒸着マスクの製造方法。
- 前記工程Dは、インクジェット法で行われる、請求項1から12のいずれかに記載の蒸着マスクの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016055003 | 2016-03-18 | ||
JP2016055003 | 2016-03-18 |
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JP2018505219A Division JP6461423B2 (ja) | 2016-03-18 | 2016-07-22 | 蒸着マスク、蒸着マスクの製造方法、および有機半導体素子の製造方法 |
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JP2019031737A JP2019031737A (ja) | 2019-02-28 |
JP6527997B2 true JP6527997B2 (ja) | 2019-06-12 |
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JP2018175944A Active JP6527997B2 (ja) | 2016-03-18 | 2018-09-20 | 蒸着マスクの製造方法 |
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Country Status (5)
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US (1) | US20200299821A1 (ja) |
JP (2) | JP6461423B2 (ja) |
CN (1) | CN108779549B (ja) |
TW (1) | TW201734236A (ja) |
WO (1) | WO2017158858A1 (ja) |
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CN112030102B (zh) * | 2016-02-10 | 2022-12-06 | 鸿海精密工业股份有限公司 | 蒸镀掩模的制造方法 |
WO2019130388A1 (ja) * | 2017-12-25 | 2019-07-04 | 堺ディスプレイプロダクト株式会社 | 蒸着マスク、蒸着方法及び有機el表示装置の製造方法 |
KR20210091382A (ko) * | 2020-01-13 | 2021-07-22 | 삼성디스플레이 주식회사 | 마스크, 이의 제조 방법, 및 표시 패널 제조 방법 |
TWI773461B (zh) * | 2021-07-27 | 2022-08-01 | 凌嘉科技股份有限公司 | 鍍膜後之毛邊去除裝置及方法 |
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EP1582753A1 (de) * | 2004-03-29 | 2005-10-05 | Sika Technology AG | Befestigungselement zur Befestigung an einem Grundkörper sowie Verfahren zur Befestigung eines Befestigungselement |
JP2005302457A (ja) * | 2004-04-09 | 2005-10-27 | Toray Ind Inc | 蒸着マスクおよびその製造方法並びに有機電界発光装置の製造方法 |
JP2006233286A (ja) * | 2005-02-25 | 2006-09-07 | Seiko Epson Corp | マスク、マスクの製造方法、パターン形成装置、パターン形成方法 |
JP2007173107A (ja) * | 2005-12-22 | 2007-07-05 | Kyocera Corp | マスク、マスク固定装置、及びマスクを使用して製造するディスプレイの製造方法 |
CN105336855B (zh) * | 2012-01-12 | 2020-08-04 | 大日本印刷株式会社 | 蒸镀掩模装置准备体 |
JP6194493B2 (ja) * | 2012-03-30 | 2017-09-13 | 株式会社ブイ・テクノロジー | 薄膜パターン形成方法 |
JP5958824B2 (ja) * | 2012-11-15 | 2016-08-02 | 株式会社ブイ・テクノロジー | 蒸着マスクの製造方法 |
US10597766B2 (en) * | 2013-03-26 | 2020-03-24 | Dai Nippon Printing Co., Ltd. | Vapor deposition mask, vapor deposition mask preparation body, method for producing vapor deposition mask, and method for producing organic semiconductor element |
JP6142388B2 (ja) * | 2013-04-09 | 2017-06-07 | 株式会社ブイ・テクノロジー | 蒸着マスク及び蒸着マスクの製造方法 |
JP6035548B2 (ja) * | 2013-04-11 | 2016-11-30 | 株式会社ブイ・テクノロジー | 蒸着マスク |
KR20150143433A (ko) * | 2013-04-12 | 2015-12-23 | 다이니폰 인사츠 가부시키가이샤 | 증착 마스크, 증착 마스크 준비체, 증착 마스크의 제조 방법 및 유기 반도체 소자의 제조 방법 |
JP2014206469A (ja) * | 2013-04-12 | 2014-10-30 | デクセリアルズ株式会社 | 磁気分離用磁性複合粒子 |
US10090467B2 (en) * | 2014-10-15 | 2018-10-02 | Sharp Kabushiki Kaisha | Deposition mask, deposition device, deposition method, and deposition mask manufacturing method |
CN104561895B (zh) * | 2014-12-25 | 2017-03-22 | 昆山国显光电有限公司 | 一种复合掩膜板及其制作方法 |
-
2016
- 2016-07-22 US US16/085,597 patent/US20200299821A1/en not_active Abandoned
- 2016-07-22 WO PCT/JP2016/071634 patent/WO2017158858A1/ja active Application Filing
- 2016-07-22 JP JP2018505219A patent/JP6461423B2/ja active Active
- 2016-07-22 CN CN201680083684.3A patent/CN108779549B/zh active Active
- 2016-07-27 TW TW105123730A patent/TW201734236A/zh unknown
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2018
- 2018-09-20 JP JP2018175944A patent/JP6527997B2/ja active Active
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JPWO2017158858A1 (ja) | 2019-02-28 |
CN108779549A (zh) | 2018-11-09 |
CN108779549B (zh) | 2021-04-06 |
JP2019031737A (ja) | 2019-02-28 |
US20200299821A1 (en) | 2020-09-24 |
WO2017158858A1 (ja) | 2017-09-21 |
TW201734236A (zh) | 2017-10-01 |
JP6461423B2 (ja) | 2019-01-30 |
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