JP6527304B2 - パターニングスリットシートフレーム・アセンブリ - Google Patents
パターニングスリットシートフレーム・アセンブリ Download PDFInfo
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- JP6527304B2 JP6527304B2 JP2013219956A JP2013219956A JP6527304B2 JP 6527304 B2 JP6527304 B2 JP 6527304B2 JP 2013219956 A JP2013219956 A JP 2013219956A JP 2013219956 A JP2013219956 A JP 2013219956A JP 6527304 B2 JP6527304 B2 JP 6527304B2
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- 238000000059 patterning Methods 0.000 title claims description 263
- 230000000630 rising effect Effects 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 3
- 230000004308 accommodation Effects 0.000 description 44
- 239000010410 layer Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 27
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 15
- 239000012044 organic layer Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
- B05C21/005—Masking devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
51,59 絶縁膜
52 活性層
52a チャネル領域
52b ソース領域
52c ドレイン領域
53 ゲート絶縁膜
54 ゲート電極
55 層間絶縁膜
56 ソース電極
57 ドレイン電極
58 保護膜
60 画素定義膜
61 第1電極
62 第2電極
63 有機層
100, 200, 200’, 300, 400, 400’, 500, 500’, 600, 600’ パターニングスリットシートフレーム・アセンブリ
110 パターニングスリットシート
110a パターニングスリット
110b パターニングリブ
111 中央部
112 外郭部
120,220,320,420, 420’,520,620 パターニングスリットシートフレーム
120a パターニングスリットシートフレームの内側面
121 貫通部
130,230,230’,330,430,430’,530,530’ 引張り力印加部
231,431,531,631 第1引張り力印加部
231a 第1引張り力印加部の内側
232,432,532,632 第2引張り力印加部
232a 第2引張り力印加部の内側
233,433,533,633 第3引張り力印加部
320a,520a 収容溝
420a,420’a 第1収容溝
420b,420’b 第2収容溝
430’c 第3収容溝
531a,532a 収容部
631a,631b,631c,632a,632b,632c 引張り力印加部材
634 第4引張り力印加部
Claims (8)
- パターンが形成されたパターニングスリットシートと、
前記パターニングスリットシートを支持するパターニングスリットシートフレームと、
前記パターニングスリットシートが、前記パターニングスリットシートフレームの上部面に配置されて溶接によって固定された後、前記パターニングスリットシートに引張り力を印加する引張り力印加部と、
を備え、
前記パターニングスリットシートは、パターニングスリットが形成された中央部と、パターンが形成されていない外郭部と、を有し、
前記パターニングスリットシートフレームは、前記中央部に対応する貫通部を有するピラー状であり、
前記引張り力印加部は、前記パターニングスリットシートフレームの内側面に配置され、その上部面が前記パターニングスリットシートの外郭部に接して、前記パターニングスリットシートフレームの内側面に沿って昇降することを特徴とするパターニングスリットシートフレーム・アセンブリ。 - 前記引張り力印加部は、前記パターニングスリットシートと前記パターニングスリットシートフレームとが溶接された位置より中央部に近く配置されることを特徴とする請求項1に記載のパターニングスリットシートフレーム・アセンブリ。
- 前記引張り力印加部は、前記パターニングスリットシートの中央部を取り囲むように、前記外郭部に接することを特徴とする請求項1に記載のパターニングスリットシートフレーム・アセンブリ。
- 前記引張り力印加部は、前記パターニングスリットシートと前記パターニングスリットシートフレームとが接合された状態で、前記パターニングスリットシートの上部に向けて移動することにより、前記パターニングスリットシートに引張り力を加えることを特徴とする請求項1に記載のパターニングスリットシートフレーム・アセンブリ。
- 前記パターニングスリットシートフレームは、その上部面が前記外郭部と接合され、前記中央部は、前記貫通部によって露出されることを特徴とする請求項1に記載のパターニングスリットシートフレーム・アセンブリ。
- 前記引張り力印加部は、前記パターニングスリットシートフレームの内側面に沿って上昇することにより、前記パターニングスリットシートに引張り力を加えることを特徴とする請求項1に記載のパターニングスリットシートフレーム・アセンブリ。
- 前記引張り力印加部は、(n+1)個(nは、自然数)の引張り力印加部からなり、
(n+1)番目の前記引張り力印加部は、n番目の前記引張り力印加部の内側面に配置されることを特徴とする請求項1に記載のパターニングスリットシートフレーム・アセンブリ。 - 前記引張り力印加部は、前記パターニングスリットシートフレームの内側面それぞれに、別途に形成されることを特徴とする請求項1に記載のパターニングスリットシートフレーム・アセンブリ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0129102 | 2012-11-14 | ||
KR1020120129102A KR101980232B1 (ko) | 2012-11-14 | 2012-11-14 | 패터닝 슬릿 시트 프레임 어셈블리 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014098208A JP2014098208A (ja) | 2014-05-29 |
JP2014098208A5 JP2014098208A5 (ja) | 2016-12-08 |
JP6527304B2 true JP6527304B2 (ja) | 2019-06-05 |
Family
ID=50680432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013219956A Active JP6527304B2 (ja) | 2012-11-14 | 2013-10-23 | パターニングスリットシートフレーム・アセンブリ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9163306B2 (ja) |
JP (1) | JP6527304B2 (ja) |
KR (1) | KR101980232B1 (ja) |
CN (1) | CN103805959B (ja) |
TW (1) | TWI625853B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102079170B1 (ko) * | 2013-04-09 | 2020-02-20 | 삼성디스플레이 주식회사 | 증착 장치 및 그에 적용되는 마스크 조립체 |
JP2015069806A (ja) * | 2013-09-27 | 2015-04-13 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置の製造方法 |
CN104561892B (zh) * | 2014-12-04 | 2016-11-23 | 深圳市华星光电技术有限公司 | Oled材料真空热蒸镀用掩膜板 |
Family Cites Families (20)
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JPS5441157Y2 (ja) * | 1975-07-30 | 1979-12-03 | ||
US4721488A (en) * | 1986-02-21 | 1988-01-26 | Zenith Electronics Corporation | Apparatus for tensing a shadow mask foil |
FR2610139B1 (fr) * | 1987-01-27 | 1996-07-12 | Videocolor | Procede de montage d'un masque d'ombre dans un tube cathodique trichrome et tube cathodique comportant un masque d'ombre monte selon ce procede |
KR100322065B1 (ko) * | 1999-01-22 | 2002-02-04 | 김순택 | 평면형 음극선관의 마스크 프레임 조립체 |
KR20010046478A (ko) * | 1999-11-12 | 2001-06-15 | 구자홍 | 수직형 대면적 노광장치 |
KR100848972B1 (ko) * | 2001-08-24 | 2008-07-30 | 다이니폰 인사츠 가부시키가이샤 | 진공증착용 다면부착 마스크장치 |
KR100490534B1 (ko) | 2001-12-05 | 2005-05-17 | 삼성에스디아이 주식회사 | 유기 전자 발광 소자의 박막 증착용 마스크 프레임 조립체 |
KR100813832B1 (ko) | 2002-05-31 | 2008-03-17 | 삼성에스디아이 주식회사 | 증착용 마스크 프레임 조립체와 이의 제조방법 |
US6955726B2 (en) | 2002-06-03 | 2005-10-18 | Samsung Sdi Co., Ltd. | Mask and mask frame assembly for evaporation |
JP4072422B2 (ja) * | 2002-11-22 | 2008-04-09 | 三星エスディアイ株式会社 | 蒸着用マスク構造体とその製造方法、及びこれを用いた有機el素子の製造方法 |
JP4173722B2 (ja) | 2002-11-29 | 2008-10-29 | 三星エスディアイ株式会社 | 蒸着マスク、これを利用した有機el素子の製造方法及び有機el素子 |
US20040163592A1 (en) * | 2003-02-20 | 2004-08-26 | Tohoku Poineer Corporation | Mask for vacuum deposition and organic EL display panel manufactured by using the same |
KR100659057B1 (ko) | 2004-07-15 | 2006-12-21 | 삼성에스디아이 주식회사 | 박막 증착용 마스크 프레임 조립체 및 유기 전계 발광표시장치 |
KR100615536B1 (ko) | 2004-11-19 | 2006-08-25 | 알투스주식회사 | 열 인가 스트레칭 마스크 제조 방법 및 장치 |
JP5151004B2 (ja) * | 2004-12-09 | 2013-02-27 | 大日本印刷株式会社 | メタルマスクユニット及びその製造方法 |
KR101081180B1 (ko) | 2005-12-13 | 2011-11-07 | 사천홍시현시기건유한공사 | 새도우 마스크 및 그 제작 장치 |
KR20070063307A (ko) * | 2005-12-14 | 2007-06-19 | 주성엔지니어링(주) | 마스크 어셈블리 |
KR100947442B1 (ko) | 2007-11-20 | 2010-03-12 | 삼성모바일디스플레이주식회사 | 수직 증착형 마스크 제조장치 및 이를 이용한 수직 증착형마스크의 제조방법 |
EP2110455A1 (en) * | 2008-04-18 | 2009-10-21 | Applied Materials, Inc. | Mask support, mask assembly, and assembly comprising a mask support and a mask |
KR101156442B1 (ko) | 2010-04-29 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 마스크 프레임 조립체 |
-
2012
- 2012-11-14 KR KR1020120129102A patent/KR101980232B1/ko active IP Right Grant
-
2013
- 2013-03-15 US US13/834,721 patent/US9163306B2/en active Active
- 2013-04-10 TW TW102112677A patent/TWI625853B/zh active
- 2013-06-08 CN CN201310228379.7A patent/CN103805959B/zh active Active
- 2013-10-23 JP JP2013219956A patent/JP6527304B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014098208A (ja) | 2014-05-29 |
TW201419514A (zh) | 2014-05-16 |
CN103805959B (zh) | 2018-04-03 |
CN103805959A (zh) | 2014-05-21 |
TWI625853B (zh) | 2018-06-01 |
KR20140061911A (ko) | 2014-05-22 |
KR101980232B1 (ko) | 2019-05-21 |
US20140130733A1 (en) | 2014-05-15 |
US9163306B2 (en) | 2015-10-20 |
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