JP6524104B2 - 重量の削減されたガス排出プレートを備えたcvd反応炉のガス注入素子 - Google Patents
重量の削減されたガス排出プレートを備えたcvd反応炉のガス注入素子 Download PDFInfo
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- JP6524104B2 JP6524104B2 JP2016544797A JP2016544797A JP6524104B2 JP 6524104 B2 JP6524104 B2 JP 6524104B2 JP 2016544797 A JP2016544797 A JP 2016544797A JP 2016544797 A JP2016544797 A JP 2016544797A JP 6524104 B2 JP6524104 B2 JP 6524104B2
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- gas
- gas discharge
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
2…ガス注入素子
3…プロセスチャンバー
4…サセプタ
5…基板
6…ヒーター
7,7’…ガス分配ボリューム
8…ガス排出プレート
9,9’…ガス排出開口
10…広い面のコーティング
11…広い面のコーティング
12…コア
13…壁、(密封)層
14…スリーブ
15…供給ライン
16…接触端子
17…接触端子
18…接触エリア
19…接触エリア
20…冷却管
21…ガス分配経路
22…側壁
23…底面
24…パイプ
25…狭い壁
26…ガス分配経路
27…側壁
28…底面
29…パイプ
30,30’…供給ライン
31…外壁
UH…加熱電圧
Claims (13)
- 反応炉ハウジング(1)の中に配置されたガス注入素子(2)を含み、プロセスチャンバー(3)に面するガス排出プレート(8)を含み、当該ガス排出プレート(8)が多孔質材と多数のガス排出開口(9)を含み、当該ガス排出開口(9)が前記ガス注入素子(2)の中に配置されたガス分配ボリューム(7)からプロセスガスを供給され、
前記多孔質材が前記ガス排出プレート(8)のコア(12)を形成し、当該コア(12)の細孔が閉じられるように、お互いから離れて向く前記ガス排出プレート(8)の2つの広い面(10,11)と前記ガス排出開口(9)の壁(13)とが密封される、
ことを特徴とするCVDプロセスを実行するための装置。 - プロセスガスと接触する前記コア(12)の表面部分が、セラミックまたは金属層によって密封されることを特徴とする請求項1に記載の装置。
- 前記コア(12)の材料が固体発泡体であるか、または前記コア(12)が耐熱材料から作られることを特徴とする請求項1または2に記載の装置。
- 前記固体発泡体が、カーボン、グラファイトまたは炭化ケイ素または金属で作られた固体発泡体であることを特徴とする請求項3に記載の装置。
- 導電性の前記コア(12)が導電性材料で作られる接触エリア(10,11;18,19)を含み、当該接触エリア(10,11;18,19)が接触端子(16,17)に接続され、当該接触端子(16,17)に前記ガス注入素子(2)を加熱するために電気加熱電圧(UH)が印加されることができることを特徴とする請求項1ないし4のいずれか1項に記載の装置。
- 前記コア(12)がインチ当たり100個の細孔の多孔率を有する開口細孔の固体発泡体であることを特徴とする請求項1ないし5のいずれか1項に記載の装置。
- 前記ガス排出開口(9)の壁が穴に挿入されるスリーブ(14)によって構成されることを特徴とする請求項1ないし6のいずれか1項に記載の装置。
- 前記ガス排出プレート(8)の2つの密封された広い面において、下方を向く広い面(11)が前記プロセスチャンバー(3)の屋根を形成し、上方を向く広い面(10)が前記ガス分配ボリューム(7)の壁を形成することを特徴とする請求項1ないし7のいずれか1項に記載の装置。
- 前記ガス排出プレート(8)が、前記ガス排出開口(9)とは異なる多数のガス排出開口(9’)を含み、
前記ガス排出プレート(8)の中を走り、多数の前記ガス排出開口(9,9’)にプロセスガスを供給するガス分配経路(21、26)を有する、
ことを特徴とする請求項1ないし8のいずれか1項に記載の装置。 - 前記ガス分配ボリューム(7)と流れに関して接続されておらず、前記ガス排出開口(9’)にプロセスガスを供給するガス分配ボリューム(7’)を有し、
前記2つのガス分配ボリューム(7,7’)が別々の供給ライン(15,30)によってプロセスガスを供給される、
ことを特徴とする請求項9に記載の装置。 - 前記ガス注入素子(2)の全体の長さに渡って延びる前記ガス分配経路(21,26)が列の形でお互いのそばに並べられていることを特徴とする請求項9または10に記載の装置。
- お互いのそばに直接並べられた前記ガス分配経路(21,26)が異なる前記ガス分配ボリューム(7,7’)に割り当てられており、異なるプロセスガスが前記プロセスチャンバーの中にお互いから分離されて供給されることができることを特徴とする請求項10に記載の装置。
- 前記ガス分配ボリューム(7’)が、前記ガス排出プレート(8)の広い面(10,11)によって境界を形成される前記ガス排出プレート(8)のボリュームの内部に配置されることを特徴とする請求項10または12に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014100252.0 | 2014-01-10 | ||
DE102014100252 | 2014-01-10 | ||
DE102014118704.0A DE102014118704A1 (de) | 2014-01-10 | 2014-12-16 | Gaseinlassorgan eines CVD-Reaktors mit gewichtsverminderter Gasaustrittsplatte |
DE102014118704.0 | 2014-12-16 | ||
PCT/EP2014/078262 WO2015104155A1 (de) | 2014-01-10 | 2014-12-17 | Gaseinlassorgan eines cvd-reaktors mit gewichtsverminderter gasaustrittsplatte |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017503925A JP2017503925A (ja) | 2017-02-02 |
JP6524104B2 true JP6524104B2 (ja) | 2019-06-05 |
Family
ID=53484815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016544797A Expired - Fee Related JP6524104B2 (ja) | 2014-01-10 | 2014-12-17 | 重量の削減されたガス排出プレートを備えたcvd反応炉のガス注入素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10323322B2 (ja) |
JP (1) | JP6524104B2 (ja) |
KR (1) | KR20160106169A (ja) |
CN (1) | CN105899709B (ja) |
DE (1) | DE102014118704A1 (ja) |
TW (1) | TWI652371B (ja) |
WO (1) | WO2015104155A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6855958B2 (ja) * | 2017-06-23 | 2021-04-07 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板およびプラズマ処理装置用電極板の製造方法 |
CN111167683A (zh) * | 2018-11-13 | 2020-05-19 | 耿晋 | 一种进气装置及干燥单元 |
DE102020117669A1 (de) | 2020-07-03 | 2022-01-05 | Aixtron Se | CVD-Reaktor mit aus einem Graphitschaum bestehenden gasleitenden Bauteilen |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US4123989A (en) * | 1977-09-12 | 1978-11-07 | Mobil Tyco Solar Energy Corp. | Manufacture of silicon on the inside of a tube |
US5248253A (en) * | 1992-01-28 | 1993-09-28 | Digital Equipment Corporation | Thermal processing furnace with improved plug flow |
JPH10298763A (ja) * | 1997-04-25 | 1998-11-10 | Ulvac Japan Ltd | Cvd装置用ガス導入ノズル |
JP4371543B2 (ja) * | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
DE10211442A1 (de) | 2002-03-15 | 2003-09-25 | Aixtron Ag | Vorrichtung zum Abscheiden von dünnen Schichten auf einem Substrat |
CN101151702B (zh) | 2005-04-05 | 2010-05-19 | 松下电器产业株式会社 | 用于等离子体处理设备的气体喷头盘 |
DE102006018515A1 (de) | 2006-04-21 | 2007-10-25 | Aixtron Ag | CVD-Reaktor mit absenkbarer Prozesskammerdecke |
JP2008205219A (ja) | 2007-02-20 | 2008-09-04 | Masato Toshima | シャワーヘッドおよびこれを用いたcvd装置 |
US20090226614A1 (en) * | 2008-03-04 | 2009-09-10 | Tokyo Electron Limited | Porous gas heating device for a vapor deposition system |
US7816200B2 (en) * | 2008-04-22 | 2010-10-19 | Applied Materials, Inc. | Hardware set for growth of high k and capping material films |
JP5264938B2 (ja) * | 2011-01-13 | 2013-08-14 | 株式会社半導体理工学研究センター | 中性粒子照射型cvd装置 |
WO2012175124A1 (en) | 2011-06-22 | 2012-12-27 | Aixtron Se | Vapor deposition material source and method for making same |
-
2014
- 2014-12-16 DE DE102014118704.0A patent/DE102014118704A1/de not_active Withdrawn
- 2014-12-17 WO PCT/EP2014/078262 patent/WO2015104155A1/de active Application Filing
- 2014-12-17 CN CN201480072849.8A patent/CN105899709B/zh not_active Expired - Fee Related
- 2014-12-17 US US15/109,793 patent/US10323322B2/en not_active Expired - Fee Related
- 2014-12-17 KR KR1020167021734A patent/KR20160106169A/ko active IP Right Grant
- 2014-12-17 JP JP2016544797A patent/JP6524104B2/ja not_active Expired - Fee Related
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2015
- 2015-01-05 TW TW104100041A patent/TWI652371B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20160326644A1 (en) | 2016-11-10 |
US10323322B2 (en) | 2019-06-18 |
TWI652371B (zh) | 2019-03-01 |
CN105899709A (zh) | 2016-08-24 |
TW201533264A (zh) | 2015-09-01 |
WO2015104155A1 (de) | 2015-07-16 |
JP2017503925A (ja) | 2017-02-02 |
KR20160106169A (ko) | 2016-09-09 |
CN105899709B (zh) | 2019-12-24 |
DE102014118704A1 (de) | 2015-07-16 |
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