JP6513285B2 - 基板処理装置及び半導体装置の製造方法 - Google Patents
基板処理装置及び半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 296
- 238000012545 processing Methods 0.000 title claims description 84
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 230000007723 transport mechanism Effects 0.000 claims 1
- 238000009529 body temperature measurement Methods 0.000 description 53
- 238000003860 storage Methods 0.000 description 32
- 238000000034 method Methods 0.000 description 17
- 239000002184 metal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 238000005259 measurement Methods 0.000 description 11
- 238000003672 processing method Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005489 elastic deformation Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
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- H01L21/67248—Temperature monitoring
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Description
図1及び図2に示されるように、本実施の形態に係る基板処理装置10は、大気搬送室(EFEM:Equipment Front End Module)12と、ロードロック室14、16と、搬送室18と、処理室20及び22とを備えている。これらの大気搬送室12、ロードロック室14、16、搬送室18、処理室20及び22は、矢印Y方向に向かって順次配設されている。
次に、上記処理室20、22について、詳しく説明する。図1、図3及び図4に示されるように、一方の処理室20には、反応室本体200に平面視において半円形状に形成され、側面視において凹形状に形成された反応室201が配設されている。反応室201の矢印Y方向中間部には、矢印X方向に横切る角柱形状の仕切部204が着脱自在に配置されている。反応室201では仕切部204を中心として両側のそれぞれに基板載置部202、203が配設されている。仕切部204は、ここではアルミニウムにより形成されている。また、仕切部204は、石英、酸化アルミニウム等により形成されてもよい。基板載置部202において1枚の基板24を処理することができ、基板載置部203において他の1枚の基板24を処理することができる。従って、処理室20では2枚の基板24を処理することができる。
図5〜図7に示されるように、処理室20、22のそれぞれにおいて、基板載置部202の収納部225及び基板載置部203の収納部225には、温度測定部(温度測定ユニット)40が配設されている。温度測定部40は、基板載置部202に少なくとも1個、基板載置部203に少なくとも1個配設されている。なお、基板載置部202、基板載置部203にはそれぞれ3個の温度測定部40が配設可能である。詳しく説明すると、温度測定部40は、載置面202A上、載置面203A上に温度検出部(温感部)である先端部42Aが突出し、かつ、弾性変形可能な温度センサ42と、この温度センサ42を取付けて収納部225に固定する取付部材(土台)44とを含んで構成されている。
δ=PL3/3EI …(1)
I=πD4/64 …(2)
算出条件は、温度センサ42の耐熱金属管の材料を例えばステンレス鋼材とし、基板24の直径を300mmとし、先端部42Aにかかる基板24からの作用力Pを基板24の質量の1/5とする。撓み量δは0.5[mm]、作用力Pは0.27[N]、ヤング係数Eは200×103[N/mm2]、耐熱金属管の直径Dは0.25[mm]とすると、長さLは5[mm]となる。許容範囲を考慮し、長さLは4[mm]〜6[mm]に設定される。
次に、上記基板処理装置10を用いた基板処理方法を説明し、併せて半導体装置の製造方法並びに基板処理プログラムを説明する。基板処理装置10では、図1に示される大気搬送室12のキャリア26から大気ロボット28を用いてロードロック室14、16に基板24が搬送される。基板24は半導体装置を製造するために用いられる半導体ウェーハである。例えば基板24の面上に半導体装置が形成される。搬送された基板24は、図2に示される基板支持体140に搬送され、かつ、収納される。
なお、載置面202A上に基板24を載置する場合と同様に、基板載置部203に設けられた基板保持ピン224を用いて、基板24を載置面203A上に載置させるようにしてもよい。この場合も、フィンガー223の支持部位223Aは、基板載置部203に設けられた収納部225内に収容される。
本実施の形態に係る基板処理装置10は、図5〜図8に示されるように、載置面202A上に突出して基板載置部202に設けられた弾性変形可能な温度センサ42を有する温度測定部40を備える。温度センサ42の先端部42Aは載置面202A上に基板24を載置するだけで基板24の裏面に接触し、弾性変形により撓むことにより先端部42Aと基板24の裏面との接触が確実なものとなる。同様に、基板処理装置10は、載置面203A上に突出して基板載置部203に設けられた弾性変形可能な温度センサ42を有する温度測定部40を備える。温度センサ42の先端部42Aは載置面203A上に基板24を載置するだけで基板24の裏面に接触し、弾性変形により撓むことにより先端部42Aと基板24の裏面との接触が確実なものとなる。このため、基板24の成膜状態にかかわらず、基板24の温度測定の精度を簡易に向上させることができる。
本発明は、上記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲において、種々変形可能である。例えば、本発明は、温度測定部の温度センサの先端部を変形し難い高い剛性により形成し、先端部を回動可能とし、ばね等の弾性部材を用いて載置面上に先端部の突出状態を維持するように構成してもよい。この場合、先端部の上に基板が載置されると、基板の自重により弾性部材が撓むことにより、先端部が基板裏面に接触した状態が維持される。
Claims (9)
- 載置面を有し、当該載置面に基板が載置される基板載置部と、
前記基板を保持可能なアームを備え、前記アームにより保持された前記基板を前記載置面上に搬送することができるように構成された基板搬送機構と、
前記載置面に載置される前記基板を加熱する加熱部と、
シース熱電対により構成され、先端が温度検出部を構成する弾性変形可能な温度センサと、を備え、
前記基板載置部は、前記アームの少なくとも一部が収容されるように構成される凹部又は切欠部を備えており、
前記温度センサは前記載置面の下から前記載置面の上まで延びており、前記先端が、前記凹部又は切欠部の内側から前記載置面の上に突出している、
基板処理装置。 - 前記温度センサは、前記載置面に前記基板が載置されると、前記先端が前記基板の裏面に接触するとともに、前記載置面から突出する部分が前記載置面の下に収まるように弾性変形するように構成されている、請求項1記載の基板処理装置。
- 前記温度センサは、前記載置面に前記基板が載置されると、前記基板の自重のみによって弾性変形して前記載置面から突出する部分が前記載置面の下に収まるように構成されている、請求項2記載の基板処理装置。
- 前記温度センサは、前記シース熱電対自体が弾性変形するように構成されている、請求項1記載の基板処理装置。
- 前記シース熱電対の直径は0.5mm以下である、請求項1記載の基板処理装置。
- 前記シース熱電対の前記載置面から突出する部分は、前記載置面に対して傾斜するように設けられる、請求項1記載の基板処理装置。
- 前記凹部又は切欠部の内側には、前記温度センサが固定されるように構成される取付部材が設けられ、
前記取付部材は、突起状の支持部を備え、前記取付部材は前記支持部を介して前記基板載置部に対して固定されるように構成される、請求項1記載の基板処理装置。 - 前記加熱部は前記基板載置部内に設けられている、請求項7記載の基板処理装置。
- 載置面を有し、当該載置面に基板が載置される基板載置部と、前記基板を保持可能なアームを備え、前記アームにより保持された前記基板を前記載置面上に搬送することができるように構成された基板搬送機構と、前記載置面に載置される前記基板を加熱する加熱部と、 シース熱電対により構成され、先端が温度検出部を構成する弾性変形可能な温度センサと、を備え、前記基板載置部は、前記アームの少なくとも一部が収容されるように構成される凹部又は切欠部を備えており、前記温度センサは前記載置面の下から前記載置面の上まで延びており、前記先端が、前記凹部又は切欠部の内側から前記載置面の上に突出している、基板処理装置の前記載置面に基板を載置する工程と、
前記基板を加熱する工程と、
前記温度センサを用いて前記基板の温度を測定する工程と、
を備えた半導体装置の製造方法。
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