JP6503157B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP6503157B2 JP6503157B2 JP2014054832A JP2014054832A JP6503157B2 JP 6503157 B2 JP6503157 B2 JP 6503157B2 JP 2014054832 A JP2014054832 A JP 2014054832A JP 2014054832 A JP2014054832 A JP 2014054832A JP 6503157 B2 JP6503157 B2 JP 6503157B2
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- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/133334—Electromagnetic shields
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Description
図1に、本発明の一態様に係る液晶表示装置の、画素の積層構造の一例を示す。
次いで、図1に示した液晶表示装置の、画素のより詳細な積層構造の一例を図2に示す。
次いで、液晶表示装置の画素部の回路構成例について説明する。
次いで、本発明の一態様に係る液晶表示装置の構成例について説明する。
次いで、図5(B)に示す画素31の、レイアウトの一例を図7に示す。なお、図7では、画素31のレイアウトを明確にするために、ゲート絶縁膜などの各種の絶縁膜や酸化物膜を省略している。また、図7に示す素子基板を用いて形成された液晶表示装置の断面図を、図8に示す。図8に示す液晶表示装置のうち、第1基板10を含む素子基板は、図7の破線A1−A2における断面図に相当する。
次いで、図7に示した素子基板の作製方法について、一例を挙げて説明する。なお、酸化物半導体膜にチャネル形成領域を有するトランジスタ35を例に挙げて素子基板の作製方法について説明するが、トランジスタ35は、非晶質、微結晶、多結晶または単結晶である、シリコン又はゲルマニウムなどの半導体膜を活性層に用いることもできる。
なお、電子供与体(ドナー)となる水分または水素などの不純物が低減され、なおかつ酸素欠損が低減されることにより高純度化された酸化物半導体(purified Oxide Semiconductor)は、i型(真性半導体)又はi型に限りなく近い。そのため、高純度化された酸化物半導体膜にチャネル形成領域を有するトランジスタは、オフ電流が著しく小さく、信頼性が高い。
本発明の一態様に係る液晶表示装置の外観について、図12を用いて説明する。図12は、第1基板4001と第2基板4006とを封止材4005によって接着させた液晶表示装置の上面図である。また、図13は、図12の破線B1−B2における断面図に相当する。なお、図12では、FFSモードの液晶表示装置を例示している。
本発明の一態様に係る液晶表示装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る液晶表示装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラなどのカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンター、プリンター複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図14に示す。
11 素子層
12 電極
13 絶縁膜
14 電極
15 トランジスタ
16 画素
20 第2基板
21 電極
21a 導電膜
21b 導電膜
21c 導電膜
21d 導電膜
22 絶縁膜
23 電極
24 樹脂膜
25 導電膜
26 容量
27 導電体
28 液晶層
30 画素部
31 画素
32 駆動回路
33 駆動回路
34 液晶素子
35 トランジスタ
36 容量素子
38 パネル
40 液晶表示装置
41 コントローラ
43 CPU
44 画像処理回路
45 画像メモリ
46 画像データ
51 導電膜
53 絶縁膜
54 半導体膜
55 導電膜
56 導電膜
57 酸化物膜
58 絶縁膜
59 絶縁膜
60 有機樹脂膜
61 導電膜
62 開口部
63 絶縁膜
64 導電膜
65 配向膜
66 絶縁膜
67 遮蔽膜
68 着色層
69 配向膜
4001 第1基板
4002 画素部
4003 駆動回路
4004 駆動回路
4005 封止材
4006 第2基板
4010 トランジスタ
4018 FPC
4020 絶縁膜
4021 画素電極
4022 絶縁膜
4023 液晶素子
4024 共通電極
4028 液晶層
4030 配線
4050 導電膜
4051 導電膜
4052 導電膜
4053 導電膜
4054 ゲート絶縁膜
4056 電極
4057 電極
4058 絶縁膜
4059 樹脂膜
4060 導電膜
4061 導電性粒子
4062 樹脂膜
5001 筐体
5002 筐体
5003 表示部
5004 表示部
5005 マイクロホン
5006 スピーカー
5007 操作キー
5008 スタイラス
5201 筐体
5202 表示部
5203 支持台
5401 筐体
5402 表示部
5403 キーボード
5404 ポインティングデバイス
5601 筐体
5602 筐体
5603 表示部
5604 表示部
5605 接続部
5606 操作キー
5801 筐体
5802 筐体
5803 表示部
5804 操作キー
5805 レンズ
5806 接続部
5901 筐体
5902 表示部
5903 カメラ
5904 スピーカー
5905 ボタン
5906 外部接続部
5907 マイク
Claims (4)
- 第1の基板と、
前記第1の基板上の素子層と、
前記素子層上の液晶素子と、
前記液晶素子上の導電膜と、
前記導電膜上の樹脂膜と、
前記樹脂膜上の第1の電極と
前記第1の電極と第1の絶縁膜を介して重なる領域を有する第2の電極と、
前記第2の電極上の第2の基板と、を有し、
前記素子層は、酸化物半導体をチャネル形成領域に含むトランジスタを有し、
前記トランジスタは、前記液晶素子への画像信号の供給を制御する機能を有し、
前記液晶素子は、画素電極と、共通電極と、前記画素電極及び前記共通電極から電界が加えられる液晶層と、を有し、
前記画素電極は、第2の絶縁膜を介して前記共通電極と重なる領域を有し、
前記画素電極は、前記共通電極上に位置し、
前記画素電極は、前記共通電極の開口部を介して前記トランジスタのソース又はドレインの一方と電気的に接続されており、
前記共通電極の開口部は、前記トランジスタのチャネル形成領域と重なっており、
前記トランジスタのチャネル形成領域は、前記共通電極と重なっておらず、
前記第1の電極は、前記第2の電極と交差しており、
前記導電膜には第1の電位が供給される液晶表示装置であって、
前記液晶表示装置は、前記第1の電極と前記第2の電極とを用いて位置情報の取得を行う機能を有する液晶表示装置。 - 第1の基板と、
前記第1の基板上の素子層と、
前記素子層上の液晶素子と、
前記液晶素子上の導電膜と、
前記導電膜上の樹脂膜と、
前記樹脂膜上の第1の電極と
前記第1の電極と第1の絶縁膜を介して重なる領域を有する第2の電極と、
前記第2の電極上の第2の基板と、を有し、
前記素子層は、酸化物半導体をチャネル形成領域に含むトランジスタを有し、
前記トランジスタは、前記液晶素子への画像信号の供給を制御する機能を有し、
前記液晶素子は、画素電極と、共通電極と、前記画素電極及び前記共通電極から電界が加えられる液晶層と、を有し、
前記画素電極は、第2の絶縁膜を介して前記共通電極と重なる領域を有し、
前記画素電極は、前記共通電極上に位置し、
前記画素電極は、前記共通電極の開口部を介して前記トランジスタのソース又はドレインの一方と電気的に接続されており、
前記共通電極の開口部は、前記トランジスタのチャネル形成領域と重なっており、
前記トランジスタのチャネル形成領域は、前記共通電極と重なっておらず、
前記第1の電極は、前記第2の電極と交差しており、
前記導電膜は、前記共通電極と電気的に接続される液晶表示装置であって、
前記液晶表示装置は、前記第1の電極と前記第2の電極とを用いて位置情報の取得を行う機能を有する液晶表示装置。 - 第1の基板と、
前記第1の基板上の素子層と、
前記素子層上の液晶素子と、
前記液晶素子上の導電膜と、
前記導電膜上の樹脂膜と、
前記樹脂膜上の第1の電極と
前記第1の電極と第1の絶縁膜を介して重なる領域を有する第2の電極と、
前記第2の電極上の第2の基板と、を有し、
前記素子層は、酸化物半導体をチャネル形成領域に含むトランジスタを有し、
前記トランジスタは、前記液晶素子への画像信号の書き込みを制御する機能を有し、
前記液晶素子は、画素電極と、共通電極と、前記画素電極及び前記共通電極から電界が加えられる液晶層と、を有し、
前記画素電極は、第2の絶縁膜を介して前記共通電極と重なる領域を有し、
前記画素電極は、前記共通電極上に位置し、
前記画素電極は、前記共通電極の開口部を介して前記トランジスタのソース又はドレインの一方と電気的に接続されており、
前記共通電極の開口部は、前記トランジスタのチャネル形成領域と重なっており、
前記トランジスタのチャネル形成領域は、前記共通電極と重なっておらず、
前記第1の電極は、前記第2の電極と交差しており、
前記導電膜には第1の電位が供給される液晶表示装置であって、
第1の期間と、第2の期間と、を有し、
前記第1の期間では静止画の表示を行い、
前記第2の期間では動画の表示を行い、
前記第1の期間における一定期間内の前記液晶素子への前記画像信号の書き込みの回数は、前記第2の期間における一定期間内の前記液晶素子への前記画像信号の書き込みの回数よりも少なく、
前記液晶表示装置は、前記第1の電極と前記第2の電極とを用いて位置情報の取得を行う機能を有する液晶表示装置。 - 第1の基板と、
前記第1の基板上の素子層と、
前記素子層上の液晶素子と、
前記液晶素子上の導電膜と、
前記導電膜上の樹脂膜と、
前記樹脂膜上の第1の電極と
前記第1の電極と第1の絶縁膜を介して重なる領域を有する第2の電極と、
前記第2の電極上の第2の基板と、を有し、
前記素子層は、酸化物半導体をチャネル形成領域に含むトランジスタを有し、
前記トランジスタは、前記液晶素子への画像信号の供給を制御する機能を有し、
前記液晶素子は、画素電極と、共通電極と、前記画素電極及び前記共通電極から電界が加えられる液晶層と、を有し、
前記画素電極は、第2の絶縁膜を介して前記共通電極と重なる領域を有し、
前記画素電極は、前記共通電極上に位置し、
前記画素電極は、前記共通電極の開口部を介して前記トランジスタのソース又はドレインの一方と電気的に接続されており、
前記共通電極の開口部は、前記トランジスタのチャネル形成領域と重なっており、
前記トランジスタのチャネル形成領域は、前記共通電極と重なっておらず、
前記第1の電極は、前記第2の電極と交差しており、
前記導電膜は、前記共通電極と電気的に接続される液晶表示装置であって、
第1の期間と、第2の期間と、を有し、
前記第1の期間では静止画の表示を行い、
前記第2の期間では動画の表示を行い、
前記第1の期間における一定期間内の前記液晶素子への前記画像信号の書き込みの回数は、前記第2の期間における一定期間内の前記液晶素子への前記画像信号の書き込みの回数よりも少なく、
前記液晶表示装置は、前記第1の電極と前記第2の電極とを用いて位置情報の取得を行う機能を有する液晶表示装置。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019117405A (ja) * | 2013-03-22 | 2019-07-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8562770B2 (en) | 2008-05-21 | 2013-10-22 | Manufacturing Resources International, Inc. | Frame seal methods for LCD |
US9573346B2 (en) | 2008-05-21 | 2017-02-21 | Manufacturing Resources International, Inc. | Photoinitiated optical adhesive and method for using same |
US9881528B2 (en) | 2011-10-13 | 2018-01-30 | Manufacturing Resources International, Inc. | Transparent liquid crystal display on display case |
JP6518133B2 (ja) | 2014-05-30 | 2019-05-22 | 株式会社半導体エネルギー研究所 | 入力装置 |
US9526352B2 (en) * | 2014-06-16 | 2016-12-27 | Manufacturing Resources International, Inc. | Wireless video transmission system for liquid crystal display |
US9633366B2 (en) | 2014-06-16 | 2017-04-25 | Manufacturing Resources International, Inc. | System for tracking and analyzing display case usage |
US9500896B2 (en) | 2014-06-16 | 2016-11-22 | Manufacturing Resources International, Inc. | Cooling system for liquid crystal display |
US9535293B2 (en) | 2014-06-16 | 2017-01-03 | Manufacturing Resources International, Inc. | Sealed transparent liquid crystal display assembly |
US9500801B2 (en) * | 2014-06-16 | 2016-11-22 | Manufacturing Resources International, Inc. | LED assembly for transparent liquid crystal display |
US10649273B2 (en) | 2014-10-08 | 2020-05-12 | Manufacturing Resources International, Inc. | LED assembly for transparent liquid crystal display and static graphic |
US9832847B2 (en) | 2014-10-09 | 2017-11-28 | Manufacturing Resources International, Inc. | System for decreasing energy usage of a transparent LCD display case |
US10182665B2 (en) | 2014-10-15 | 2019-01-22 | Manufacturing Resources International, Inc. | System and method for preventing damage to products |
KR102500994B1 (ko) | 2014-10-17 | 2023-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 |
US9933872B2 (en) | 2014-12-01 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
JP6698321B2 (ja) | 2014-12-02 | 2020-05-27 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP6765199B2 (ja) | 2015-03-17 | 2020-10-07 | 株式会社半導体エネルギー研究所 | タッチパネル |
WO2016147074A1 (en) * | 2015-03-17 | 2016-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
KR20160114510A (ko) * | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 |
US10372274B2 (en) | 2015-04-13 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
US10671204B2 (en) | 2015-05-04 | 2020-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and data processor |
US10684500B2 (en) | 2015-05-27 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
WO2016189426A1 (ja) | 2015-05-28 | 2016-12-01 | 株式会社半導体エネルギー研究所 | タッチパネル |
CN106249493B (zh) * | 2015-06-05 | 2019-10-11 | 群创光电股份有限公司 | 显示装置 |
KR102619052B1 (ko) | 2015-06-15 | 2023-12-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US10325131B2 (en) * | 2015-06-30 | 2019-06-18 | Synaptics Incorporated | Active matrix capacitive fingerprint sensor for display integration based on charge sensing by a 2-TFT pixel architecture |
US11043543B2 (en) | 2015-07-07 | 2021-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor and touch panel |
CN105116589A (zh) * | 2015-09-25 | 2015-12-02 | 深圳市华星光电技术有限公司 | 阵列基板、透光钝化膜及液晶显示面板的制造方法 |
JP2019513251A (ja) | 2016-03-02 | 2019-05-23 | マニュファクチャリング・リソーシズ・インターナショナル・インコーポレーテッド | 透明ディスプレイを備える自動販売機 |
TWI769995B (zh) | 2016-06-24 | 2022-07-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置、電子裝置 |
KR20190026850A (ko) | 2016-07-08 | 2019-03-13 | 매뉴팩처링 리소시스 인터내셔널 인코포레이티드 | 통합형 전자 디스플레이를 갖는 미러 |
KR102365490B1 (ko) | 2016-07-13 | 2022-02-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 입출력 패널, 입출력 장치, 반도체 장치 |
KR102517810B1 (ko) | 2016-08-17 | 2023-04-05 | 엘지디스플레이 주식회사 | 표시장치 |
US20180145096A1 (en) * | 2016-11-23 | 2018-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TWI622911B (zh) * | 2017-02-14 | 2018-05-01 | 宏碁股份有限公司 | 觸控裝置 |
CN114384715B (zh) * | 2021-12-29 | 2023-06-06 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
Family Cites Families (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5837549U (ja) | 1981-09-08 | 1983-03-11 | 日本ゼオン株式会社 | 粘着テ−プ等の保持力測定装置 |
JP3963974B2 (ja) | 1995-12-20 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 液晶電気光学装置 |
US6346932B1 (en) * | 1996-03-14 | 2002-02-12 | Seiko Epson Corporation | Liquid crystal device and electronic equipment |
US6184946B1 (en) * | 1996-11-27 | 2001-02-06 | Hitachi, Ltd. | Active matrix liquid crystal display |
JP4117148B2 (ja) | 2002-05-24 | 2008-07-16 | 日本電気株式会社 | 半透過型液晶表示装置 |
JP2005292709A (ja) | 2004-04-05 | 2005-10-20 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示素子 |
KR20060115427A (ko) | 2005-05-04 | 2006-11-09 | 삼성전자주식회사 | 액정 표시 장치 |
EP1958019B1 (en) | 2005-12-05 | 2017-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2007212498A (ja) * | 2006-02-07 | 2007-08-23 | Epson Imaging Devices Corp | 液晶表示装置、液晶表示装置の製造方法及び電子機器 |
WO2007102238A1 (ja) | 2006-03-08 | 2007-09-13 | Sharp Kabushiki Kaisha | 表示装置 |
JP4466596B2 (ja) | 2006-03-29 | 2010-05-26 | カシオ計算機株式会社 | 配向転移方法 |
KR20090028627A (ko) | 2006-06-09 | 2009-03-18 | 애플 인크. | 터치 스크린 액정 디스플레이 |
CN101467119B (zh) | 2006-06-09 | 2013-02-13 | 苹果公司 | 触摸屏液晶显示器 |
KR101295943B1 (ko) * | 2006-06-09 | 2013-08-13 | 애플 인크. | 터치 스크린 액정 디스플레이 |
US8243027B2 (en) | 2006-06-09 | 2012-08-14 | Apple Inc. | Touch screen liquid crystal display |
CN104965621B (zh) | 2006-06-09 | 2018-06-12 | 苹果公司 | 触摸屏液晶显示器及其操作方法 |
KR101264693B1 (ko) | 2006-06-30 | 2013-05-16 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치 및 그 구동방법 |
US20080167526A1 (en) | 2007-01-08 | 2008-07-10 | Crank Justin M | Non-Occlusive, Laterally-Constrained Injection Device |
KR100851207B1 (ko) | 2007-01-16 | 2008-08-07 | 삼성에스디아이 주식회사 | 2차원 및 3차원 영상 선택 가능 디스플레이 장치 |
JP5008026B2 (ja) * | 2007-01-30 | 2012-08-22 | ソニーモバイルディスプレイ株式会社 | 入力機能付表示装置 |
JP5051690B2 (ja) | 2007-01-30 | 2012-10-17 | 株式会社ジャパンディスプレイウェスト | 入力機能付表示装置 |
KR20080073573A (ko) * | 2007-02-06 | 2008-08-11 | 엘지디스플레이 주식회사 | 액정패널과 이의 제조방법 |
JP2008299312A (ja) * | 2007-05-01 | 2008-12-11 | Epson Imaging Devices Corp | 液晶表示装置および電子機器 |
KR101304411B1 (ko) | 2007-05-03 | 2013-09-05 | 삼성디스플레이 주식회사 | 표시 장치 |
CN100472290C (zh) | 2007-08-30 | 2009-03-25 | 深圳和而泰智能控制股份有限公司 | 电容式触摸屏及制作方法 |
KR20090023117A (ko) | 2007-08-31 | 2009-03-04 | 세이코 엡슨 가부시키가이샤 | 액정 장치, 액정 장치의 구동 방법, 액정 장치 구동용 집적회로 장치 및 전자 기기 |
KR101374108B1 (ko) | 2007-10-30 | 2014-03-13 | 엘지디스플레이 주식회사 | 액정 표시 패널과 그 제조 방법 |
TW200921483A (en) * | 2007-11-09 | 2009-05-16 | Tpk Touch Solutions Inc | Touch-control display panel with an electric-field shielding layer |
US20090190077A1 (en) | 2007-12-21 | 2009-07-30 | Chung Yuan Christian University | Bistable SmA liquid-crystal display |
JP4678031B2 (ja) * | 2008-01-11 | 2011-04-27 | ソニー株式会社 | 液晶装置および電子機器 |
JP4816668B2 (ja) | 2008-03-28 | 2011-11-16 | ソニー株式会社 | タッチセンサ付き表示装置 |
TW200949649A (en) * | 2008-05-16 | 2009-12-01 | Emerging Display Tech Corp | A LCD panel with built-in capacitive-type touch-control panel |
JP5483143B2 (ja) * | 2008-09-22 | 2014-05-07 | 大日本印刷株式会社 | カラーフィルタ、表示装置、および、カラーフィルタの製造方法 |
US20100091231A1 (en) * | 2008-10-14 | 2010-04-15 | Seiko Epson Corporation | Liquid crystal display device and electronic apparatus |
JP5512138B2 (ja) * | 2009-01-30 | 2014-06-04 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP2010191287A (ja) * | 2009-02-19 | 2010-09-02 | Hitachi Displays Ltd | 表示装置 |
TWI403946B (zh) * | 2009-06-15 | 2013-08-01 | Au Optronics Corp | 顯示裝置及其應用方法 |
TWI497157B (zh) * | 2009-06-19 | 2015-08-21 | Tpk Touch Solutions Inc | 具觸控功能的平面轉換式液晶顯示器 |
JP5297927B2 (ja) * | 2009-07-22 | 2013-09-25 | 株式会社ジャパンディスプレイウェスト | 液晶表示パネル |
CN101963713A (zh) * | 2009-07-24 | 2011-02-02 | 宸鸿光电科技股份有限公司 | 具有触控功能的平面转换式液晶显示器 |
US20120223308A1 (en) * | 2009-10-16 | 2012-09-06 | Sharp Kabushiki Kaisha | Thin-film transistor, process for production of same, and display device equipped with same |
TWI390291B (zh) | 2009-12-15 | 2013-03-21 | Au Optronics Corp | 液晶顯示裝置 |
JP5377279B2 (ja) * | 2009-12-28 | 2013-12-25 | 株式会社ジャパンディスプレイ | 静電容量型入力装置および入力機能付き電気光学装置 |
TW201124766A (en) * | 2010-01-08 | 2011-07-16 | Wintek Corp | Display device with touch panel |
US20120242923A1 (en) * | 2010-02-25 | 2012-09-27 | Sharp Kabushiki Kaisha | Thin film transistor substrate, method for manufacturing the same, and display device |
KR101305378B1 (ko) | 2010-03-19 | 2013-09-06 | 엘지디스플레이 주식회사 | 터치인식 횡전계형 액정표시장치 및 이의 제조 방법 |
JP5013554B2 (ja) * | 2010-03-31 | 2012-08-29 | 株式会社ジャパンディスプレイセントラル | 液晶表示装置 |
KR20220005640A (ko) * | 2010-04-28 | 2022-01-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
JP5458443B2 (ja) | 2010-09-14 | 2014-04-02 | 株式会社ジャパンディスプレイ | タッチ検出機能付き表示装置、および電子機器 |
KR101729682B1 (ko) | 2010-11-04 | 2017-04-25 | 삼성디스플레이 주식회사 | 광학 유닛 및 이를 포함하는 표시 장치 |
JP5134676B2 (ja) * | 2010-11-24 | 2013-01-30 | 株式会社ジャパンディスプレイイースト | 液晶表示装置およびその製造方法 |
JP5090553B2 (ja) * | 2011-03-30 | 2012-12-05 | アルプス電気株式会社 | 表面パネルおよびその製造方法 |
JP2012220670A (ja) * | 2011-04-07 | 2012-11-12 | Toppan Printing Co Ltd | タッチパネル電極付きカラーフィルタとその製造方法 |
US8988624B2 (en) * | 2011-06-23 | 2015-03-24 | Apple Inc. | Display pixel having oxide thin-film transistor (TFT) with reduced loading |
KR20130005660A (ko) * | 2011-07-07 | 2013-01-16 | 삼성전자주식회사 | 터치스크린패널 액정디스플레이장치 |
US9405330B2 (en) | 2011-07-29 | 2016-08-02 | Sharp Kabushiki Kaisha | Touch panel substrate and display panel |
US9470941B2 (en) * | 2011-08-19 | 2016-10-18 | Apple Inc. | In-cell or on-cell touch sensor with color filter on array |
JP5647955B2 (ja) * | 2011-08-24 | 2015-01-07 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP2013080185A (ja) * | 2011-10-05 | 2013-05-02 | Japan Display East Co Ltd | 液晶表示装置 |
US9417746B2 (en) * | 2012-02-09 | 2016-08-16 | Sharp Kabushiki Kaisha | Touch-panel substrate |
TWM442547U (en) * | 2012-05-02 | 2012-12-01 | Apex Material Technology Corp | Electrode layer for use in touch panel |
KR20130127848A (ko) * | 2012-05-15 | 2013-11-25 | 삼성전기주식회사 | 터치센서 및 그 제조방법 |
JP2015148637A (ja) | 2012-05-23 | 2015-08-20 | シャープ株式会社 | 液晶表示装置 |
TWM440479U (en) * | 2012-06-06 | 2012-11-01 | J Touch Corp | Capacitive touch sensor |
JP2015163908A (ja) | 2012-06-21 | 2015-09-10 | シャープ株式会社 | 液晶表示装置 |
KR101975930B1 (ko) | 2012-07-04 | 2019-05-07 | 엘지디스플레이 주식회사 | 듀얼모드 액정표시장치의 구동방법 |
JP2015179100A (ja) | 2012-07-23 | 2015-10-08 | シャープ株式会社 | 液晶表示装置 |
CN102841716B (zh) * | 2012-08-21 | 2015-08-05 | 北京京东方光电科技有限公司 | 一种电容式内嵌触摸屏及显示装置 |
CN102841466B (zh) * | 2012-09-20 | 2015-08-26 | 昆山龙腾光电有限公司 | 液晶显示装置 |
US20140152922A1 (en) | 2012-12-05 | 2014-06-05 | Samsung Display Co., Ltd. | Liquid crystal display and method of manufacturing the same |
CN102998840A (zh) | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | 显示面板以及具有该显示面板的显示装置 |
US9552785B2 (en) | 2012-12-19 | 2017-01-24 | Sharp Kabushiki Kaisha | Liquid crystal display device |
JP2014186724A (ja) * | 2013-02-22 | 2014-10-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
KR102141459B1 (ko) | 2013-03-22 | 2020-08-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
TWI545373B (zh) | 2013-09-25 | 2016-08-11 | 群創光電股份有限公司 | 自發光顯示元件 |
EP2983040B1 (en) | 2014-07-25 | 2019-05-22 | LG Display Co., Ltd. | Transparent display based on a guest-host cholesteric liquid crystal device |
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- 2014-03-06 TW TW111136050A patent/TW202321793A/zh unknown
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019117405A (ja) * | 2013-03-22 | 2019-07-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US10901255B2 (en) | 2013-03-22 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
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KR20220008375A (ko) | 2022-01-20 |
TW201441743A (zh) | 2014-11-01 |
TWI621899B (zh) | 2018-04-21 |
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JP2019117405A (ja) | 2019-07-18 |
JP6714744B2 (ja) | 2020-06-24 |
KR102354348B1 (ko) | 2022-01-20 |
JP2014209204A (ja) | 2014-11-06 |
US10317717B2 (en) | 2019-06-11 |
US9581849B2 (en) | 2017-02-28 |
US10901255B2 (en) | 2021-01-26 |
TW202138890A (zh) | 2021-10-16 |
KR20140115972A (ko) | 2014-10-01 |
KR102479009B1 (ko) | 2022-12-16 |
KR102141459B1 (ko) | 2020-08-05 |
JP2022063283A (ja) | 2022-04-21 |
JP2020149069A (ja) | 2020-09-17 |
KR102414062B1 (ko) | 2022-06-27 |
TW202321793A (zh) | 2023-06-01 |
US20170160576A1 (en) | 2017-06-08 |
TW201827904A (zh) | 2018-08-01 |
JP2023115339A (ja) | 2023-08-18 |
JP7021294B2 (ja) | 2022-02-16 |
KR20220092835A (ko) | 2022-07-04 |
TWI732991B (zh) | 2021-07-11 |
KR20200093506A (ko) | 2020-08-05 |
US20140285732A1 (en) | 2014-09-25 |
US20180164625A1 (en) | 2018-06-14 |
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