JP6486319B2 - アクティブ層、薄膜トランジスタアレイ基板及び表示装置 - Google Patents
アクティブ層、薄膜トランジスタアレイ基板及び表示装置 Download PDFInfo
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- JP6486319B2 JP6486319B2 JP2016243584A JP2016243584A JP6486319B2 JP 6486319 B2 JP6486319 B2 JP 6486319B2 JP 2016243584 A JP2016243584 A JP 2016243584A JP 2016243584 A JP2016243584 A JP 2016243584A JP 6486319 B2 JP6486319 B2 JP 6486319B2
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- semiconductor
- thin film
- film transistor
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Description
前記基板上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、半導体物質及び複数の炭素同素体を含むアクティブ層と、
前記アクティブ層に各々接触するソース電極及びドレイン電極と、
を備える薄膜トランジスタアレイ基板である。
前記薄膜トランジスタアレイ基板上の有機絶縁膜と、
前記有機絶縁膜上の画素電極と、
を備える表示装置である。
なお、明細書全体にわたって同じ参照符号は、実質的に同じ構成要素を意味する。以下の説明において、本発明と関連した公知技術あるいは構成に対する具体的な説明が本発明の要旨を不要に濁すと判断される場合、その詳細な説明を省略する。また、以下の説明において使用される構成要素の名称は、明細書作成の容易さを考慮して選択されたものに過ぎず、実際、製品の部品名称とは相違することがあり得る。
本発明は、炭素同素体と半導体物質とを含む薄膜トランジスタを開示し、具体的に、炭素同素体と半導体物質とを含むアクティブ層が形成された薄膜トランジスタを開示する。薄膜トランジスタは、表示装置のスイッチング素子または駆動素子として使用される。
本発明において開示する炭素同素体は、互いに共有結合された炭素原子の多環芳香族分子を表す。共有結合された炭素原子は、繰り返し単位として6個の構成要素からなる環を形成でき、また、5個の構成要素からなる環及び7個の構成要素からなる環のうちの1つ以上を含むこともできる。炭素同素体は、単一層であり得るし、または炭素同素体の他の層上に積層された複数の炭素同素体層を備えることもできる。炭素同素体は、1次元または2次元構造を有する。炭素同素体は、約100nmの最大厚みを有し、具体的に、約10nm〜約90nm、より具体的には、約20nm〜約80nmの厚みを有する。
本発明の半導体物質は、セラミック半導体、有機半導体物質、または遷移金属カルコゲン化合物であって、半導体特性を有した材料を使用することができる。
本発明において開示する薄膜トランジスタアレイ基板は、アクティブ層下部にゲート電極が位置するボトムゲート型(bottom−gate type)薄膜トランジスタを例として説明する。しかし、本発明は、これに限定されず、アクティブ層上部にゲート電極が位置するトップゲート型(top−gate type)薄膜トランジスタも適用可能である。
図9に示すように、ソース電極135a及びドレイン電極135bの上に有機絶縁膜140が位置する。有機絶縁膜140は、下部の段差を平坦化するものであって、フォトアクリル(photo acryl)、ポリイミド(polyimide)、ベンゾシクロブテン系樹脂(benzocyclobutene resin)、アクリレート系樹脂(acrylate)などの有機物からなることができる。有機絶縁膜140は、ドレイン電極135bを露出するビアホ―ル145を備える。図示していないが、ソース電極135a及びドレイン電極135bの上にシリコン酸化物(SiOx)、シリコン窒化物(SiNx)、またはこれらの多層からなるパッシベーション膜が位置することもできる。
<実施例1>
前述した図2に示されたように、ボトムゲート型薄膜トランジスタに半導体部と炭素同素体部とを備えるアクティブ層を形成して薄膜トランジスタを製造した。ここで、半導体部は、IGZOで形成した。製造された薄膜トランジスタの光学イメージを図11に示し、これにより、半導体部と炭素同素体部とを備える薄膜トランジスタが形成されたことが確認できた。
ボトムゲート型薄膜トランジスタにIGZOのみからなるアクティブ層を形成して薄膜トランジスタを製造した。
前述した図4に示されたように、ボトムゲート型薄膜トランジスタに半導体部と炭素同素体部とを備えるアクティブ層を形成して薄膜トランジスタを製造した。ここで、半導体部は、IGZOで形成した。
アクティブ層を純粋グラフェンのみで形成したことを以外は、前述した実施例2と同様に薄膜トランジスタを製造した。
Claims (11)
- 基板と、
前記基板上のゲート電極と、
前記ゲート電極上のゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、複数の炭素同素体を含む少なくとも1つの炭素同素体部及び半導体物質を含む1つの半導体部を含むアクティブ層と、
前記アクティブ層に各々接触するソース電極及びドレイン電極と、
を備え、
前記ソース電極は、前記少なくとも1つの炭素同素体部の1つ及び前記1つの半導体部に接触し、
前記ドレイン電極は、前記少なくとも1つの炭素同素体部の1つ及び前記1つの半導体部に接触する
薄膜トランジスタアレイ基板。 - 前記炭素同素体部は、前記複数の炭素同素体の炭素間化学的結合を介してなされた複数のドメインを含む請求項1に記載の薄膜トランジスタアレイ基板。
- 前記炭素同素体は、還元グラフェンオキサイド(rGO)、非酸化グラフェン、またはグラフェンナノリボンのうちのいずれか1つまたはこれらの混合物である請求項1または2に記載の薄膜トランジスタアレイ基板。
- 前記半導体物質は、セラミック半導体、有機半導体物質、または遷移金属カルコゲン化合物のうちのいずれか1つまたはこれらの混合物である請求項1〜3のいずれか一項に記載の薄膜トランジスタアレイ基板。
- 前記1つの半導体部は、少なくともチャネルに位置する請求項1〜4のいずれか一項に記載の薄膜トランジスタアレイ基板。
- 前記少なくとも1つの炭素同素体部は、少なくともチャネルに位置する請求項1〜5のいずれか一項に記載の薄膜トランジスタアレイ基板。
- 請求項1〜6のいずれか一項に記載の薄膜トランジスタアレイ基板と、
前記薄膜トランジスタアレイ基板上の有機絶縁膜と、
前記有機絶縁膜上の画素電極と、
を備える表示装置。 - 前記画素電極を含む有機発光ダイオードと、
前記有機発光ダイオード上の封止層と、
前記封止層上のカバーウィンドウと、
をさらに備える請求項7に記載の表示装置。 - 前記画素電極と同一平面上または下部で離間して位置する共通電極と、
前記共通電極上の液晶層と、
をさらに備える請求項7に記載の表示装置。 - 前記有機発光ダイオードは、
前記画素電極上に位置して、前記画素電極を露出するバンク層と、
前記バンク層及び露出された前記画素電極上に位置する有機膜層と、
前記有機膜層上に位置する対向電極と、
を含む請求項8に記載の表示装置。 - 前記同一平面上に位置する前記画素電極と前記共通電極は、互いに交互に配置される請求項9に記載の表示装置。
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JP2014032983A (ja) * | 2012-08-01 | 2014-02-20 | Sony Corp | 半導体装置、表示装置および電子機器 |
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WO2014100723A1 (en) * | 2012-12-21 | 2014-06-26 | The Regents Of The University Of California | Vertically stacked heterostructures including graphene |
KR101400723B1 (ko) | 2013-02-28 | 2014-05-30 | 포항공과대학교 산학협력단 | 그래핀의 패터닝 방법 |
JP6031650B2 (ja) * | 2013-03-29 | 2016-11-24 | 株式会社Joled | 表示装置およびその製造方法、並びに電子機器 |
CN104538453B (zh) | 2014-12-29 | 2018-10-19 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法和显示器件 |
KR102402547B1 (ko) * | 2015-08-18 | 2022-05-26 | 삼성전자주식회사 | 그래핀 아일랜드들을 포함하는 채널층을 구비한 그래핀 전자소자 및 그 제조방법 |
KR102459948B1 (ko) * | 2015-12-28 | 2022-10-31 | 엘지디스플레이 주식회사 | 액티브층, 이를 포함하는 박막트랜지스터 어레이 기판 및 표시장치 |
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JP2017120895A (ja) | 2017-07-06 |
EP3188252A1 (en) | 2017-07-05 |
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