JP6616389B2 - 薄膜トランジスタアレイ基板及び表示装置 - Google Patents
薄膜トランジスタアレイ基板及び表示装置 Download PDFInfo
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- JP6616389B2 JP6616389B2 JP2017240622A JP2017240622A JP6616389B2 JP 6616389 B2 JP6616389 B2 JP 6616389B2 JP 2017240622 A JP2017240622 A JP 2017240622A JP 2017240622 A JP2017240622 A JP 2017240622A JP 6616389 B2 JP6616389 B2 JP 6616389B2
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- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Materials Engineering (AREA)
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- Thin Film Transistor (AREA)
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- Electroluminescent Light Sources (AREA)
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Description
120 ゲート電極
130 ゲート絶縁膜
140 アクティブ層
142 第1領域
146 第2領域
150a ソース電極
150b ドレン電極
Claims (13)
- 基板と、
前記基板上に位置するゲート電極と、
前記ゲート電極と対向し、厚さが互いに異なる第1領域及び第2領域を有し、少なくとも半導体物質を含むアクティブ層と、
前記ゲート電極と前記アクティブ層との間に介在するゲート絶縁膜と、
前記アクティブ層に各々接触するソース電極及びドレン電極と
を含み、
前記アクティブ層は、炭素同素体をさらに含み、前記炭素同素体は、前記半導体物質内に分散され、
前記第1領域は、前記ソース電極及び前記ドレン電極の一方に隣接し、前記第2領域は、前記ソース電極及び前記ドレン電極の他方に隣接し、
前記第1領域の厚さは、前記第2領域の厚さより小さく、
前記ソース電極と前記ドレン電極の間に位置するチャネル領域において、前記第2領域の長さは、前記第1領域の長さ以上である薄膜トランジスタアレイ基板。 - 前記アクティブ層は、前記チャネル領域を含み、
前記第1領域及び前記第2領域は、前記チャネル領域と完全に重なる請求項1に記載の薄膜トランジスタアレイ基板。 - 前記第1領域の厚さは、3nmから10nmの範囲内である請求項1に記載の薄膜トランジスタアレイ基板。
- 前記第2領域の厚さは、前記第1領域の厚さの1.5倍から3倍である請求項3に記載の薄膜トランジスタアレイ基板。
- 前記第2領域の長さは、前記チャネル領域の長さの50%から90%である請求項1に記載の薄膜トランジスタアレイ基板。
- 前記炭素同素体は、1次元または2次元構造を有する請求項1に記載の薄膜トランジスタアレイ基板。
- 前記炭素同素体は、還元型酸化グラフェン、非酸化グラフェン、グラフェンナノリボン及びカーボンナノチューブのうち、いずれか一つまたはこれらの混合物である請求項1に記載の薄膜トランジスタアレイ基板。
- 前記半導体物質は、セラミック半導体、有機半導体、遷移金属カルコゲン化合物及び酸化物半導体のうち、いずれか一つまたはこれらの混合物である請求項1に記載の薄膜トランジスタアレイ基板。
- 前記アクティブ層において前記炭素同素体は、前記半導体物質100重量%に対して0.01重量%から1重量%で含まれる請求項1に記載の薄膜トランジスタアレイ基板。
- 基板と、
前記基板上に位置するゲート電極と、
前記ゲート電極と対向し、厚さが互いに異なる第1領域及び第2領域を有し、少なくとも半導体物質を含むアクティブ層と、
前記ゲート電極と前記アクティブ層との間に介在するゲート絶縁膜と、
前記アクティブ層に各々接触するソース電極及びドレン電極と、
前記ソース電極及びドレン電極上に位置する有機絶縁膜と、
前記有機絶縁膜上に位置する画素電極と
を含み、
前記アクティブ層は、炭素同素体をさらに含み、前記炭素同素体は、前記半導体物質内に分散され、
前記第1領域は、前記ソース電極及び前記ドレン電極の一方に隣接し、前記第2領域は、前記ソース電極及び前記ドレン電極の他方に隣接し、
前記第1領域の厚さは、前記第2領域の厚さより小さく、
前記ソース電極と前記ドレン電極の間に位置するチャネル領域において、前記第2領域の長さは、前記第1領域の長さ以上である表示装置。 - 前記画素電極を含む有機発光ダイオードと、
前記有機発光ダイオード上に位置する封止層と、
前記封止層上に位置するカバーウィンドウと
をさらに含む請求項10に記載の表示装置。 - 前記画素電極の一部を露出することにより画素を画定するための前記画素電極上に配置されたバンク層と、
前記画素電極上の有機層と、
前記有機層及び前記バンク層上の対向電極又はカソード電極と
をさらに含む請求項10に記載の表示装置。 - 前記画素電極と同一平面上または下部で離隔して位置する共通電極と、
前記共通電極上に位置する液晶層と
をさらに含む請求項10に記載の表示装置。
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