JP6485299B2 - 半導体装置およびその製造方法ならびに電力変換装置 - Google Patents

半導体装置およびその製造方法ならびに電力変換装置 Download PDF

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JP6485299B2
JP6485299B2 JP2015178990A JP2015178990A JP6485299B2 JP 6485299 B2 JP6485299 B2 JP 6485299B2 JP 2015178990 A JP2015178990 A JP 2015178990A JP 2015178990 A JP2015178990 A JP 2015178990A JP 6485299 B2 JP6485299 B2 JP 6485299B2
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semiconductor layer
type semiconductor
semiconductor device
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manufacturing
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JP2017005236A5 (enExample
JP2017005236A (ja
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隆弘 藤井
隆弘 藤井
正芳 小嵜
正芳 小嵜
隆樹 丹羽
隆樹 丹羽
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Toyoda Gosei Co Ltd
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JP2015178990A 2015-06-05 2015-09-11 半導体装置およびその製造方法ならびに電力変換装置 Active JP6485299B2 (ja)

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JP2017005236A5 JP2017005236A5 (enExample) 2017-12-28
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Publication number Priority date Publication date Assignee Title
JP6485383B2 (ja) * 2016-02-23 2019-03-20 株式会社デンソー 化合物半導体装置およびその製造方法
JP6927112B2 (ja) * 2018-03-27 2021-08-25 豊田合成株式会社 半導体装置の製造方法
JP6927116B2 (ja) * 2018-03-28 2021-08-25 豊田合成株式会社 半導体装置

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KR100225409B1 (ko) * 1997-03-27 1999-10-15 김덕중 트렌치 디-모오스 및 그의 제조 방법
KR100865600B1 (ko) * 2000-02-09 2008-10-27 노쓰 캐롤라이나 스테이트 유니버시티 갈륨 나이트라이드 반도체 구조물 및 그 제조 방법, 및 반도체 구조물 및 그 제조 방법
KR100473476B1 (ko) * 2002-07-04 2005-03-10 삼성전자주식회사 반도체 장치 및 그 제조방법
US7989882B2 (en) * 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
JP5721308B2 (ja) * 2008-03-26 2015-05-20 ローム株式会社 半導体装置
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法
JP5884617B2 (ja) * 2012-04-19 2016-03-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6107597B2 (ja) * 2013-03-26 2017-04-05 豊田合成株式会社 半導体装置およびその製造方法
JP6041726B2 (ja) * 2013-03-26 2016-12-14 三菱電機株式会社 電力変換装置及び空気調和装置
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
WO2015072052A1 (ja) * 2013-11-13 2015-05-21 三菱電機株式会社 半導体装置

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