JP6475318B2 - 弾性波フィルタ、デュプレクサ、モジュール及び通信機器 - Google Patents
弾性波フィルタ、デュプレクサ、モジュール及び通信機器 Download PDFInfo
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- 238000004891 communication Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 46
- 230000005540 biological transmission Effects 0.000 claims description 15
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 11
- 239000010408 film Substances 0.000 description 90
- 230000008859 change Effects 0.000 description 18
- 230000008878 coupling Effects 0.000 description 17
- 238000010168 coupling process Methods 0.000 description 17
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- 238000010586 diagram Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
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- 238000003780 insertion Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
Description
本願は、米国特許法第119条及び特許協力条約第8条の、2014年7月31日に出願された同時係属中の特願2014−155796に基づく優先権の利益を主張する。その全体が参照により、すべての目的のために、ここに組み入れられる。
Claims (16)
- 弾性波フィルタであって、
基板と、
前記基板に配置されて第1信号端子を第2信号端子に接続する信号線と、
前記第1信号端子及び前記第2信号端子間において前記信号線に直列接続された第1直列共振器及び第2直列共振器と、
前記信号線及び少なくとも一つのグランド端子間に並列接続された複数の並列共振器と
を含み、
前記第1直列共振器及び前記第2直列共振器は、それぞれがインターデジタルトランスデューサ(IDT)電極及び前記IDT電極を覆う誘電体膜を有し、
前記第1直列共振器の反共振周波数は、前記第2直列共振器の反共振周波数よりも前記弾性波フィルタの通過帯域に近く、
前記第1直列共振器のIDT電極を覆う誘電体膜の膜厚は、前記第2直列共振器のIDT電極を覆う誘電体膜の膜厚よりも大きく、
前記複数の並列共振器は、それぞれがIDT電極及び前記IDT電極を覆う誘電体膜を有する第1並列共振器及び第2並列共振器を含み、
前記第1並列共振器の共振周波数は、前記第2並列共振器の共振周波数よりも前記弾性波フィルタの通過帯域に近く、
前記第1並列共振器のIDT電極を覆う誘電体膜の膜厚は、前記第2並列共振器のIDT電極を覆う誘電体膜の膜厚よりも大きい弾性波フィルタ。 - 前記第1並列共振器は2つの第1並列共振器を含む請求項1の弾性波フィルタ。
- 前記2つの第1並列共振器の一方の共振周波数は、前記複数の並列共振器のうちで最も前記弾性波フィルタの通過帯域に近く、
前記2つの第1並列共振器の他方の共振周波数は、前記複数の並列共振器のうちで2番目に前記弾性波フィルタの通過帯域に近い請求項2の弾性波フィルタ。 - 前記基板はニオブ酸リチウム圧電基板である請求項1〜3のいずれか一項の弾性波フィルタ。
- 前記ニオブ酸リチウム圧電基板は、オイラー角(φ,θ,ψ)が−5°≦φ≦5°、213°≦θ≦223°、−5°≦ψ≦5°を満たす請求項4の弾性波フィルタ。
- 前記第1並列共振器のIDT電極を覆う誘電体膜の膜厚は1850nmであり、
前記第2並列共振器のIDT電極を覆う誘電体膜の膜厚は1600nmである請求項1〜5のいずれか一項の弾性波フィルタ。 - 前記複数の並列共振器は、IDT電極及び前記IDT電極を覆う誘電体膜を有する第3並列共振器を含み、
前記第3並列共振器の共振周波数は、前記第2並列共振器の共振周波数よりも前記弾性波フィルタの通過帯域に近く、
前記第3並列共振器のIDT電極を覆う誘電体膜の膜厚は、前記第2並列共振器のIDT電極を覆う誘電体膜の膜厚よりも大きい請求項1の弾性波フィルタ。 - 請求項1の弾性波フィルタを含むモジュール。
- デュプレクサであって、
送信フィルタと、
受信フィルタと
を含み、
前記受信フィルタ及び前記送信フィルタの少なくとも一方が、請求項1の弾性波フィルタを含むデュプレクサ。 - 請求項9のデュプレクサを含むモジュール。
- 請求項9のデュプレクサを含む通信機器。
- 弾性波フィルタであって、
基板と、
前記基板に配置されて第1信号端子を第2信号端子に接続する信号線と、
前記信号線及び少なくとも一つのグランド端子間において並列接続された複数の並列共振器と、
前記第1信号端子及び前記第2信号端子間において前記信号線に直列接続された複数の直列共振器と
を含み、
前記複数の並列共振器は、それぞれがインターデジタルトランスデューサ(IDT)電極及び前記IDT電極を覆う誘電体膜を有し、
前記複数の並列共振器の第1並列共振器の共振周波数は、前記複数の並列共振器のうちで最も前記弾性波フィルタの通過帯域に近く、
前記第1並列共振器のIDT電極を覆う誘電体膜の第1膜厚は、前記複数の並列共振器の第2並列共振器のIDT電極を覆う誘電体膜の第2膜厚よりも大きく、
前記複数の直列共振器は、それぞれがIDT電極及び前記IDT電極を覆う誘電体膜を有する第1直列共振器及び第2直列共振器を含み、
前記第1直列共振器の反共振周波数は、前記第2直列共振器の反共振周波数よりも前記弾性波フィルタの通過帯域に近く、
前記第1直列共振器のIDT電極を覆う誘電体膜の膜厚は、前記第2直列共振器のIDT電極を覆う誘電体膜の膜厚よりも大きい弾性波フィルタ。 - 前記基板はニオブ酸リチウム圧電基板である請求項12の弾性波フィルタ。
- 前記ニオブ酸リチウム圧電基板は、オイラー角(φ,θ,ψ)が−5°≦φ≦5°、213°≦θ≦223°、−5°≦ψ≦5°を満たす請求項13の弾性波フィルタ。
- 前記複数の並列共振器は、共振周波数が前記複数の並列共振器のうちで第2番目に前記弾性波フィルタの通過帯域に近い第3並列共振器を含み、
前記第3並列共振器のIDT電極を覆う誘電体膜が前記第1膜厚を有する請求項12の弾性波フィルタ。 - 前記第1直列共振器のIDT電極を覆う誘電体膜の膜厚は1850nmであり、
前記第2直列共振器のIDT電極を覆う誘電体膜の膜厚は1600nmである請求項12の弾性波フィルタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014155796 | 2014-07-31 | ||
JP2014155796 | 2014-07-31 | ||
PCT/JP2015/003605 WO2016017104A1 (en) | 2014-07-31 | 2015-07-17 | Acoustic wave filters and duplexers using same |
Publications (3)
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JP2017526254A JP2017526254A (ja) | 2017-09-07 |
JP2017526254A5 JP2017526254A5 (ja) | 2018-08-16 |
JP6475318B2 true JP6475318B2 (ja) | 2019-02-27 |
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JP2017502744A Active JP6475318B2 (ja) | 2014-07-31 | 2015-07-17 | 弾性波フィルタ、デュプレクサ、モジュール及び通信機器 |
Country Status (4)
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JP (1) | JP6475318B2 (ja) |
KR (1) | KR20170034389A (ja) |
CN (1) | CN106664072A (ja) |
WO (1) | WO2016017104A1 (ja) |
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