JP6463755B2 - 半導体装置のためのシーリング溝の方法 - Google Patents

半導体装置のためのシーリング溝の方法 Download PDF

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Publication number
JP6463755B2
JP6463755B2 JP2016534611A JP2016534611A JP6463755B2 JP 6463755 B2 JP6463755 B2 JP 6463755B2 JP 2016534611 A JP2016534611 A JP 2016534611A JP 2016534611 A JP2016534611 A JP 2016534611A JP 6463755 B2 JP6463755 B2 JP 6463755B2
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Japan
Prior art keywords
sealing groove
wall
dovetail
vacuum processing
processing chamber
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JP2016534611A
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English (en)
Japanese (ja)
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JP2016534299A (ja
JP2016534299A5 (cg-RX-API-DMAC7.html
Inventor
ドミトリー ルボミルスキー，
ドミトリー ルボミルスキー，
チーウェイ リャン，
チーウェイ リャン，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2016534299A5 publication Critical patent/JP2016534299A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Gasket Seals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016534611A 2013-08-16 2014-08-06 半導体装置のためのシーリング溝の方法 Expired - Fee Related JP6463755B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361866802P 2013-08-16 2013-08-16
US61/866,802 2013-08-16
PCT/US2014/050008 WO2015023493A1 (en) 2013-08-16 2014-08-06 Sealing groove methods for semiconductor equipment

Publications (3)

Publication Number Publication Date
JP2016534299A JP2016534299A (ja) 2016-11-04
JP2016534299A5 JP2016534299A5 (cg-RX-API-DMAC7.html) 2017-09-14
JP6463755B2 true JP6463755B2 (ja) 2019-02-06

Family

ID=52465965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016534611A Expired - Fee Related JP6463755B2 (ja) 2013-08-16 2014-08-06 半導体装置のためのシーリング溝の方法

Country Status (6)

Country Link
US (1) US9646807B2 (cg-RX-API-DMAC7.html)
JP (1) JP6463755B2 (cg-RX-API-DMAC7.html)
KR (1) KR102178150B1 (cg-RX-API-DMAC7.html)
CN (1) CN105474373B (cg-RX-API-DMAC7.html)
TW (1) TWI641043B (cg-RX-API-DMAC7.html)
WO (1) WO2015023493A1 (cg-RX-API-DMAC7.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6339866B2 (ja) * 2014-06-05 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置およびクリーニング方法
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
KR20180112794A (ko) * 2016-01-22 2018-10-12 어플라이드 머티어리얼스, 인코포레이티드 전도성 층들이 매립된 세라믹 샤워헤드
US20190368610A1 (en) * 2016-12-08 2019-12-05 Harmonic Drive Systems Inc. Seal structure with o-ring
JP7077072B2 (ja) * 2018-03-08 2022-05-30 株式会社アルバック プラズマ処理装置、および、プラズマ処理方法
JP7281968B2 (ja) * 2019-05-30 2023-05-26 東京エレクトロン株式会社 アリ溝加工方法及び基板処理装置
US20210020484A1 (en) * 2019-07-15 2021-01-21 Applied Materials, Inc. Aperture design for uniformity control in selective physical vapor deposition
CN113309905B (zh) * 2021-06-22 2022-03-01 中国核动力研究设计院 一种热室用保温贯穿装置
US12421826B1 (en) 2024-08-30 2025-09-23 Schlumberger Technology Corporation Sealing device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1303090A (en) * 1919-05-06 Thomas mcceay
US2889183A (en) * 1955-12-07 1959-06-02 Renault Packing ring
US4264009A (en) * 1977-04-27 1981-04-28 Tattam Francis E Box having a security strip
US4400137A (en) * 1980-12-29 1983-08-23 Elliott Turbomachinery Co., Inc. Rotor assembly and methods for securing a rotor blade therewithin and removing a rotor blade therefrom
US4564732A (en) * 1982-05-19 1986-01-14 Hi-Tek Corporation Dovetail base assembly for keyswitches
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
US5050534A (en) * 1989-08-03 1991-09-24 Cryco Twenty-Two, Inc. Mobile injector system
JPH04127460A (ja) * 1990-09-18 1992-04-28 Nec Corp 混成集積回路装置
US5080556A (en) * 1990-09-28 1992-01-14 General Electric Company Thermal seal for a gas turbine spacer disc
US6138353A (en) * 1998-01-05 2000-10-31 Mpr Associates, Inc. Method for repairing vertical welds in a boiling water reactor shroud
US6189821B1 (en) * 1999-03-25 2001-02-20 Raymond James Apparatus for plastic particle reduction using dove-tailed blade
US6245149B1 (en) * 1999-07-01 2001-06-12 Applied Materials, Inc. Inert barrier for high purity epitaxial deposition systems
FR2807976B1 (fr) * 2000-04-20 2002-06-28 Plastic Omnium Cie Reservoir a carburant de vehicule automobile
JP3590794B2 (ja) 2002-02-21 2004-11-17 益岡産業株式会社 アリ溝用シール材
JP3988557B2 (ja) * 2002-07-17 2007-10-10 株式会社ジェイテクト 転がり軸受装置
JP4962687B2 (ja) * 2005-08-30 2012-06-27 Ｎｏｋ株式会社 密封構造
GB0721383D0 (en) * 2007-10-31 2007-12-12 Aes Eng Ltd Bearing plate
KR101389247B1 (ko) * 2010-03-31 2014-04-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US9349621B2 (en) * 2011-05-23 2016-05-24 Lam Research Corporation Vacuum seal arrangement useful in plasma processing chamber
KR101248382B1 (ko) * 2012-06-27 2013-04-02 시스템디엔디(주) 다단 밀봉구조를 갖는 밸브장치

Also Published As

Publication number Publication date
WO2015023493A1 (en) 2015-02-19
TW201513216A (zh) 2015-04-01
US20150047786A1 (en) 2015-02-19
TWI641043B (zh) 2018-11-11
KR102178150B1 (ko) 2020-11-12
JP2016534299A (ja) 2016-11-04
CN105474373B (zh) 2019-04-05
KR20160044011A (ko) 2016-04-22
US9646807B2 (en) 2017-05-09
CN105474373A (zh) 2016-04-06

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