JP6438751B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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JP6438751B2
JP6438751B2 JP2014242904A JP2014242904A JP6438751B2 JP 6438751 B2 JP6438751 B2 JP 6438751B2 JP 2014242904 A JP2014242904 A JP 2014242904A JP 2014242904 A JP2014242904 A JP 2014242904A JP 6438751 B2 JP6438751 B2 JP 6438751B2
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gas
plasma processing
flow rate
period
gas flow
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JP2016105433A (ja
JP2016105433A5 (enExample
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一海 田中
一海 田中
基裕 田中
基裕 田中
北田　裕穂
裕穂 北田
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Hitachi High Tech Corp
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JP2014242904A 2014-12-01 2014-12-01 プラズマ処理装置およびプラズマ処理方法 Active JP6438751B2 (ja)

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JP2016105433A JP2016105433A (ja) 2016-06-09
JP2016105433A5 JP2016105433A5 (enExample) 2017-07-27
JP6438751B2 true JP6438751B2 (ja) 2018-12-19

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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
JP6759167B2 (ja) * 2017-09-05 2020-09-23 株式会社日立ハイテク プラズマ処理装置
JP6971805B2 (ja) * 2017-11-28 2021-11-24 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4512533B2 (ja) * 2005-07-27 2010-07-28 住友精密工業株式会社 エッチング方法及びエッチング装置
JP4928893B2 (ja) * 2006-10-03 2012-05-09 株式会社日立ハイテクノロジーズ プラズマエッチング方法。
JP5410882B2 (ja) * 2009-08-20 2014-02-05 東京エレクトロン株式会社 プラズマエッチング処理装置とプラズマエッチング処理方法
JP2011054764A (ja) * 2009-09-02 2011-03-17 Hitachi High-Technologies Corp プラズマ処理装置及びその運転方法
JP2012237026A (ja) * 2011-05-10 2012-12-06 Tokyo Electron Ltd 成膜装置
JP5887201B2 (ja) * 2012-05-14 2016-03-16 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体

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