JP6437173B1 - SiC単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 - Google Patents
SiC単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 Download PDFInfo
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- JP6437173B1 JP6437173B1 JP2018543181A JP2018543181A JP6437173B1 JP 6437173 B1 JP6437173 B1 JP 6437173B1 JP 2018543181 A JP2018543181 A JP 2018543181A JP 2018543181 A JP2018543181 A JP 2018543181A JP 6437173 B1 JP6437173 B1 JP 6437173B1
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- 239000013078 crystal Substances 0.000 title claims abstract description 243
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 179
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 178
- 238000005259 measurement Methods 0.000 claims abstract description 97
- 238000013441 quality evaluation Methods 0.000 claims abstract description 19
- 238000000859 sublimation Methods 0.000 claims abstract description 15
- 230000008022 sublimation Effects 0.000 claims abstract description 15
- 238000001953 recrystallisation Methods 0.000 claims abstract description 14
- 230000001066 destructive effect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 162
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 31
- 238000011156 evaluation Methods 0.000 description 22
- 238000005530 etching Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000004854 X-ray topography Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
- G01N23/2076—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions for spectrometry, i.e. using an analysing crystal, e.g. for measuring X-ray fluorescence spectrum of a sample with wavelength-dispersion, i.e. WDXFS
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2017069381 | 2017-03-30 | ||
JP2017069381 | 2017-03-30 | ||
PCT/JP2018/013390 WO2018181788A1 (ja) | 2017-03-30 | 2018-03-29 | SiC単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 |
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JP6437173B1 true JP6437173B1 (ja) | 2018-12-12 |
JPWO2018181788A1 JPWO2018181788A1 (ja) | 2019-04-04 |
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JP2018543181A Active JP6437173B1 (ja) | 2017-03-30 | 2018-03-29 | SiC単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 |
Country Status (5)
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US (1) | US11078596B2 (de) |
JP (1) | JP6437173B1 (de) |
CN (1) | CN109196146B (de) |
DE (1) | DE112018000035T5 (de) |
WO (1) | WO2018181788A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019224600A3 (en) * | 2018-05-22 | 2020-03-05 | Panasonic Intellectual Property Management Co. Ltd. | Power and spectral monitoring in wavelength beam combining laser systems |
Families Citing this family (4)
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KR102450776B1 (ko) * | 2017-10-27 | 2022-10-05 | 삼성전자주식회사 | 레이저 가공 방법, 기판 다이싱 방법 및 이를 수행하기 위한 기판 가공 장치 |
JP7239432B2 (ja) * | 2019-09-27 | 2023-03-14 | 東海カーボン株式会社 | 多結晶SiC成形体の製造方法 |
KR102340110B1 (ko) * | 2019-10-29 | 2021-12-17 | 주식회사 쎄닉 | 탄화규소 잉곳, 웨이퍼 및 이의 제조방법 |
CN113652749B (zh) * | 2021-08-18 | 2022-07-12 | 山东天岳先进科技股份有限公司 | 一种小角晶界少的碳化硅晶体、衬底及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011219296A (ja) * | 2010-04-07 | 2011-11-04 | Nippon Steel Corp | 炭化珪素単結晶ウェハ |
JP2015063435A (ja) * | 2013-09-26 | 2015-04-09 | 三菱電機株式会社 | 単結晶インゴットの製造方法、単結晶基板の製造方法、および半導体装置の製造方法 |
WO2016002708A1 (ja) * | 2014-06-30 | 2016-01-07 | 株式会社タムラ製作所 | β-Ga2O3系単結晶基板 |
Family Cites Families (9)
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CN107059116B (zh) * | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
JP2013089937A (ja) * | 2011-10-24 | 2013-05-13 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法および炭化珪素基板 |
JP2013096750A (ja) * | 2011-10-28 | 2013-05-20 | Hamamatsu Photonics Kk | X線分光検出装置 |
JP5750363B2 (ja) * | 2011-12-02 | 2015-07-22 | 株式会社豊田中央研究所 | SiC単結晶、SiCウェハ及び半導体デバイス |
JP6037673B2 (ja) * | 2012-06-20 | 2016-12-07 | 昭和電工株式会社 | SiC単結晶基板及びSiCエピタキシャルウェハの評価方法、SiC単結晶及びSiCエピタキシャルウェハの製造方法、並びに、SiC単結晶 |
JP5944873B2 (ja) * | 2013-09-20 | 2016-07-05 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 |
JP6197722B2 (ja) * | 2014-03-26 | 2017-09-20 | 新日鐵住金株式会社 | SiC板状体における転位の面内分布評価方法 |
US10048142B2 (en) * | 2014-05-30 | 2018-08-14 | Showa Denko K.K. | Evaluation method for bulk silicon carbide single crystals and reference silicon carbide single crystal used in said method |
US9870960B2 (en) * | 2014-12-18 | 2018-01-16 | International Business Machines Corporation | Capacitance monitoring using X-ray diffraction |
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2018
- 2018-03-29 DE DE112018000035.4T patent/DE112018000035T5/de active Pending
- 2018-03-29 JP JP2018543181A patent/JP6437173B1/ja active Active
- 2018-03-29 CN CN201880002188.XA patent/CN109196146B/zh active Active
- 2018-03-29 US US16/306,129 patent/US11078596B2/en active Active
- 2018-03-29 WO PCT/JP2018/013390 patent/WO2018181788A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011219296A (ja) * | 2010-04-07 | 2011-11-04 | Nippon Steel Corp | 炭化珪素単結晶ウェハ |
JP2015063435A (ja) * | 2013-09-26 | 2015-04-09 | 三菱電機株式会社 | 単結晶インゴットの製造方法、単結晶基板の製造方法、および半導体装置の製造方法 |
WO2016002708A1 (ja) * | 2014-06-30 | 2016-01-07 | 株式会社タムラ製作所 | β-Ga2O3系単結晶基板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019224600A3 (en) * | 2018-05-22 | 2020-03-05 | Panasonic Intellectual Property Management Co. Ltd. | Power and spectral monitoring in wavelength beam combining laser systems |
Also Published As
Publication number | Publication date |
---|---|
CN109196146A (zh) | 2019-01-11 |
JPWO2018181788A1 (ja) | 2019-04-04 |
CN109196146B (zh) | 2021-02-26 |
DE112018000035T5 (de) | 2019-02-28 |
US20200010974A1 (en) | 2020-01-09 |
WO2018181788A1 (ja) | 2018-10-04 |
US11078596B2 (en) | 2021-08-03 |
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