JP6437173B1 - ＳｉＣ単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 - Google Patents

ＳｉＣ単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 Download PDF

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JP6437173B1
JP6437173B1 JP2018543181A JP2018543181A JP6437173B1 JP 6437173 B1 JP6437173 B1 JP 6437173B1 JP 2018543181 A JP2018543181 A JP 2018543181A JP 2018543181 A JP2018543181 A JP 2018543181A JP 6437173 B1 JP6437173 B1 JP 6437173B1
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single crystal
sic single
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JPWO2018181788A1 (ja
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正史 中林
正史 中林
昌史 牛尾
昌史 牛尾
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Showa Denko KK
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
    • G01N23/2076—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions for spectrometry, i.e. using an analysing crystal, e.g. for measuring X-ray fluorescence spectrum of a sample with wavelength-dispersion, i.e. WDXFS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2018543181A 2017-03-30 2018-03-29 ＳｉＣ単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 Active JP6437173B1 (ja)

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JP2017069381 2017-03-30
JP2017069381 2017-03-30
PCT/JP2018/013390 WO2018181788A1 (ja) 2017-03-30 2018-03-29 ＳｉＣ単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法

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US (1) US11078596B2 (de)
JP (1) JP6437173B1 (de)
CN (1) CN109196146B (de)
DE (1) DE112018000035T5 (de)
WO (1) WO2018181788A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019224600A3 (en) * 2018-05-22 2020-03-05 Panasonic Intellectual Property Management Co. Ltd. Power and spectral monitoring in wavelength beam combining laser systems

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KR102450776B1 (ko) * 2017-10-27 2022-10-05 삼성전자주식회사 레이저 가공 방법, 기판 다이싱 방법 및 이를 수행하기 위한 기판 가공 장치
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
KR102340110B1 (ko) * 2019-10-29 2021-12-17 주식회사 쎄닉 탄화규소 잉곳, 웨이퍼 및 이의 제조방법
CN113652749B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 一种小角晶界少的碳化硅晶体、衬底及其制备方法

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JP2011219296A (ja) * 2010-04-07 2011-11-04 Nippon Steel Corp 炭化珪素単結晶ウェハ
JP2015063435A (ja) * 2013-09-26 2015-04-09 三菱電機株式会社 単結晶インゴットの製造方法、単結晶基板の製造方法、および半導体装置の製造方法
WO2016002708A1 (ja) * 2014-06-30 2016-01-07 株式会社タムラ製作所 β－Ｇａ２Ｏ３系単結晶基板

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WO2008088838A1 (en) * 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
JP2013089937A (ja) * 2011-10-24 2013-05-13 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法および炭化珪素基板
JP2013096750A (ja) * 2011-10-28 2013-05-20 Hamamatsu Photonics Kk Ｘ線分光検出装置
JP5750363B2 (ja) * 2011-12-02 2015-07-22 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP6037673B2 (ja) 2012-06-20 2016-12-07 昭和電工株式会社 ＳｉＣ単結晶基板及びＳｉＣエピタキシャルウェハの評価方法、ＳｉＣ単結晶及びＳｉＣエピタキシャルウェハの製造方法、並びに、ＳｉＣ単結晶
JP5944873B2 (ja) * 2013-09-20 2016-07-05 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法
JP6197722B2 (ja) * 2014-03-26 2017-09-20 新日鐵住金株式会社 ＳｉＣ板状体における転位の面内分布評価方法
KR20170012272A (ko) * 2014-05-30 2017-02-02 신닛테츠스미킹 마테리알즈 가부시키가이샤 벌크상 탄화 규소 단결정의 평가 방법, 및 그 방법에 사용되는 참조용 탄화 규소 단결정
US9870960B2 (en) * 2014-12-18 2018-01-16 International Business Machines Corporation Capacitance monitoring using X-ray diffraction

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JP2011219296A (ja) * 2010-04-07 2011-11-04 Nippon Steel Corp 炭化珪素単結晶ウェハ
JP2015063435A (ja) * 2013-09-26 2015-04-09 三菱電機株式会社 単結晶インゴットの製造方法、単結晶基板の製造方法、および半導体装置の製造方法
WO2016002708A1 (ja) * 2014-06-30 2016-01-07 株式会社タムラ製作所 β－Ｇａ２Ｏ３系単結晶基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019224600A3 (en) * 2018-05-22 2020-03-05 Panasonic Intellectual Property Management Co. Ltd. Power and spectral monitoring in wavelength beam combining laser systems

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US11078596B2 (en) 2021-08-03
DE112018000035T5 (de) 2019-02-28
JPWO2018181788A1 (ja) 2019-04-04
CN109196146B (zh) 2021-02-26
US20200010974A1 (en) 2020-01-09
CN109196146A (zh) 2019-01-11
WO2018181788A1 (ja) 2018-10-04

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