JP6434837B2 - 結晶性シリコンウエハのテクスチャエッチング液組成物及びテクスチャエッチング方法 - Google Patents
結晶性シリコンウエハのテクスチャエッチング液組成物及びテクスチャエッチング方法 Download PDFInfo
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- JP6434837B2 JP6434837B2 JP2015058169A JP2015058169A JP6434837B2 JP 6434837 B2 JP6434837 B2 JP 6434837B2 JP 2015058169 A JP2015058169 A JP 2015058169A JP 2015058169 A JP2015058169 A JP 2015058169A JP 6434837 B2 JP6434837 B2 JP 6434837B2
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- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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| JP2020126997A (ja) * | 2019-02-05 | 2020-08-20 | 株式会社トクヤマ | シリコンエッチング液及び該エッチング液を用いたシリコンデバイスの製造方法 |
| KR102444014B1 (ko) | 2019-02-05 | 2022-09-15 | 가부시키가이샤 도쿠야마 | 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법 |
| CN111440613B (zh) * | 2019-12-09 | 2022-03-25 | 杭州格林达电子材料股份有限公司 | 一种tmah系各向异性硅蚀刻液及其制备方法 |
| KR20220033141A (ko) * | 2020-09-09 | 2022-03-16 | 동우 화인켐 주식회사 | 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판 |
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| US4137123A (en) | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
| KR0180621B1 (ko) | 1995-12-01 | 1999-04-15 | 이창세 | 실리콘 웨이퍼의 텍스쳐 에칭 방법 및 텍스쳐 용액 |
| DE19811878C2 (de) | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
| US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| KR100793241B1 (ko) * | 2006-06-19 | 2008-01-10 | 삼성전자주식회사 | 실리콘 고분자 및 포토레지스트 제거용 조성물, 이를이용한 막 제거 방법 및 패턴 형성 방법 |
| CN101162369A (zh) * | 2006-10-13 | 2008-04-16 | 安集微电子（上海）有限公司 | 一种低蚀刻性光刻胶清洗剂及其清洗方法 |
| JP5339880B2 (ja) * | 2008-12-11 | 2013-11-13 | 株式会社新菱 | シリコン基板のエッチング液およびシリコン基板の表面加工方法 |
| US7955989B2 (en) * | 2009-09-24 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Texturing semiconductor substrates |
| TWI510848B (zh) * | 2010-08-02 | 2015-12-01 | Dongwoo Fine Chem Co Ltd | 蝕刻劑組成物、蝕刻銅系金屬層之方法及用以製造液晶顯示裝置用之陣列基板的方法 |
| JP2012227304A (ja) * | 2011-04-19 | 2012-11-15 | Hayashi Junyaku Kogyo Kk | エッチング液組成物およびエッチング方法 |
| KR20130002258A (ko) * | 2011-06-28 | 2013-01-07 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
| KR101933527B1 (ko) * | 2011-10-19 | 2018-12-31 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
| JP2013168619A (ja) * | 2012-02-17 | 2013-08-29 | Tokuyama Corp | テクスチャー形成用組成物 |
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| JP7090908B2 (ja) | 2019-07-19 | 2022-06-27 | 株式会社フジキカイ | カートン取出し装置 |
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| CN104928680B (zh) | 2018-05-04 |
| KR20150109704A (ko) | 2015-10-02 |
| CN104928680A (zh) | 2015-09-23 |
| JP2015185849A (ja) | 2015-10-22 |
| TW201536896A (zh) | 2015-10-01 |
| KR101956352B1 (ko) | 2019-03-08 |
| TWI635161B (zh) | 2018-09-11 |
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