JP2015185849A - 結晶性シリコンウエハのテクスチャエッチング液組成物及びテクスチャエッチング方法 - Google Patents
結晶性シリコンウエハのテクスチャエッチング液組成物及びテクスチャエッチング方法 Download PDFInfo
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- JP2015185849A JP2015185849A JP2015058169A JP2015058169A JP2015185849A JP 2015185849 A JP2015185849 A JP 2015185849A JP 2015058169 A JP2015058169 A JP 2015058169A JP 2015058169 A JP2015058169 A JP 2015058169A JP 2015185849 A JP2015185849 A JP 2015185849A
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- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
下記表1に記載の成分及び条件で反応物(B)を製造した。製造例9及び10は反応なしの化合物(b−1)そのものを示す。
下記表2に記載の成分及び含量に、残量の水(H2O)を添加して結晶性シリコンウエハのテクスチャエッチング液組成物を製造した。
単結晶シリコンウエハ(156mm×156mm)を実施例及び比較例の結晶性シリコンウエハのテクスチャエッチング液組成物にそれぞれ浸漬させてエッチングした。この場合、テクスチャ条件は温度80℃、時間20分であった。
エッチング前後のウエハの重量変化を測定した。
エッチングした単結晶シリコンウエハの表面に、UV分光光度計を用いて600nmの波長帯を有する光を照射した際の反射率を測定し、その結果を表2に示した。
テクスチャの均一性は光学顕微鏡、SEMを用い、ピラミッドの大きさはSEMを用いて評価し、その結果を表2に示した。
○:ウエハ一部ピラミッド未形成
(ピラミッド構造未形成精度5%未満)
△:ウエハ一部ピラミッド未形成
(ピラミッド構造未形成精度5〜50%)
×:ウエハピラミッド未形成
(ピラミッド未形成精度90%以上)
Claims (11)
- アルカリ化合物(A)と、
水酸基を含有し、ハンセン溶解度パラメータ(δp)が8.0〜12.0[J/cm3]1/2である化合物(b−1)と、アルカリ金属(塩)(b−2)との反応物(B)と、
を含むことを特徴とする、結晶性シリコンウエハのテクスチャエッチング液組成物。 - 前記化合物(b−1)は、沸点が120℃以上であることを特徴とする、請求項1に記載の結晶性シリコンウエハのテクスチャエッチング液組成物。
- 前記化合物(b−1)は、ジプロピレングリコールメチルエーテル、トリプロピレングリコールメチルエーテル、ジプロピレングリコールプロピルエーテル、プロピレングリコールブチルエーテル、ジプロピレングリコールブチルエーテル、トリプロピレングリコールブチルエーテル、プロピレングリコールフェニルエーテル、ジエチレングリコールエチルエーテル、ジエチレングリコールメチルエーテル、ジエチレングリコールブチルエーテル、ジエチレングリコールヘキシルエーテル、エチレングリコールプロピルエーテル、エチレングリコールブチルエーテル、エチレングリコールヘキシルエーテル、トリエチレングリコールメチルエーテル、トリエチレングリコールエチルエーテル、トリエチレングリコールブチルエーテル及びエチレングリコールフェニルエーテルからなる群から選択された少なくとも1つであることを特徴とする、請求項1または2に記載の結晶性シリコンウエハのテクスチャエッチング液組成物。
- 前記アルカリ金属(塩)(b−2)は、アルカリ金属及びアルカリ金属の水酸化物からなる群から選択された少なくとも1つであることを特徴とする、請求項1ないし3のいずれかに記載の結晶性シリコンウエハのテクスチャエッチング液組成物。
- 前記アルカリ金属は、ナトリウム及びカリウムのうちの少なくとも1つであることを特徴とする、請求項4に記載の結晶性シリコンウエハのテクスチャエッチング液組成物。
- 前記化合物(b−1)と前記化合物(b−2)との反応モル比は、b−2/b−1が0.01〜0.50であることを特徴とする、請求項1ないし5のいずれかに記載の結晶性シリコンウエハのテクスチャエッチング液組成物。
- 前記アルカリ化合物(A)は、水酸化カリウム、水酸化ナトリウム、水酸化アンモニウム、テトラヒドロキシメチルアンモニウム及びテトラヒドロキシエチルアンモニウムからなる群から選択された少なくとも1つであることを特徴とする、請求項1ないし6のいずれかに記載の結晶性シリコンウエハのテクスチャエッチング液組成物。
- 前記アルカリ化合物(A)0.5〜5重量%、前記反応物(B)0.001〜5重量%及び残量の水を含むことを特徴とする、請求項1ないし7のいずれかに記載の結晶性シリコンウエハのテクスチャエッチング液組成物。
- 請求項1〜8のいずれか1項に記載の前記テクスチャエッチング液組成物により、結晶性シリコンウエハをテクスチャエッチングすることを特徴とする結晶性シリコンウエハのテクスチャエッチング方法。
- 前記テクスチャエッチング液組成物を50〜100℃の温度で30秒〜60分間、前記結晶性シリコンウエハに噴霧させることを含むことを特徴とする、請求項9に記載のテクスチャエッチング方法。
- 前記テクスチャエッチング液組成物に前記結晶性シリコンウエハを50〜100℃の温度で30秒〜60分間沈積させることを特徴とする、請求項9に記載のテクスチャエッチング方法。
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