JP6430694B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6430694B2 JP6430694B2 JP2013173920A JP2013173920A JP6430694B2 JP 6430694 B2 JP6430694 B2 JP 6430694B2 JP 2013173920 A JP2013173920 A JP 2013173920A JP 2013173920 A JP2013173920 A JP 2013173920A JP 6430694 B2 JP6430694 B2 JP 6430694B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- wiring
- component
- substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Microwave Amplifiers (AREA)
- Networks Using Active Elements (AREA)
- Amplifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013173920A JP6430694B2 (ja) | 2013-08-23 | 2013-08-23 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013173920A JP6430694B2 (ja) | 2013-08-23 | 2013-08-23 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015042001A JP2015042001A (ja) | 2015-03-02 |
| JP2015042001A5 JP2015042001A5 (cg-RX-API-DMAC7.html) | 2016-10-13 |
| JP6430694B2 true JP6430694B2 (ja) | 2018-11-28 |
Family
ID=52695891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013173920A Active JP6430694B2 (ja) | 2013-08-23 | 2013-08-23 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6430694B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017033334A1 (ja) * | 2015-08-27 | 2017-03-02 | 三菱電機株式会社 | 整合回路及び高周波増幅器 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55102292A (en) * | 1979-01-29 | 1980-08-05 | Nippon Electric Co | High frequency high output transistor amplifier |
| JPS593958A (ja) * | 1982-06-29 | 1984-01-10 | Elna Co Ltd | 角形チツプ部品とその取付装置 |
| JPS59166510U (ja) * | 1984-03-29 | 1984-11-08 | 日本電気株式会社 | 高周波高出力トランジスタ増幅器 |
| EP0506122A3 (en) * | 1991-03-29 | 1994-09-14 | Matsushita Electric Industrial Co Ltd | Power module |
| JP4635326B2 (ja) * | 2000-10-31 | 2011-02-23 | 株式会社村田製作所 | アンテナの実装構造およびそれを備えた無線装置 |
| JP2005184343A (ja) * | 2003-12-18 | 2005-07-07 | Murata Mfg Co Ltd | 積層セラミック電子部品 |
| JP2011217357A (ja) * | 2010-03-31 | 2011-10-27 | Ngk Insulators Ltd | バイアス回路 |
-
2013
- 2013-08-23 JP JP2013173920A patent/JP6430694B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015042001A (ja) | 2015-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108206677B (zh) | 用于具有增强视频带宽的rf功率放大器的多基带终端组件 | |
| CN107644852B (zh) | 用于rf功率放大器封装件的集成无源器件 | |
| US10003311B1 (en) | Compact class-F chip and wire matching topology | |
| JP5623622B2 (ja) | 半導体装置 | |
| CN110034736B (zh) | 封装式射频功率放大器 | |
| TWI629757B (zh) | High frequency semiconductor amplifier | |
| US9972588B2 (en) | Semiconductor device | |
| US10236833B2 (en) | RF amplifier with dual frequency response capacitor | |
| US12094840B2 (en) | Semiconductor device capable of realizing a wide band impedance matching | |
| US10332847B2 (en) | Semiconductor package with integrated harmonic termination feature | |
| JP2015035554A (ja) | 半導体装置 | |
| JP6430694B2 (ja) | 半導体装置 | |
| US10475777B2 (en) | Semiconductor apparatus installing passive device | |
| JP6164721B2 (ja) | 半導体装置 | |
| JP2021069068A (ja) | 半導体装置 | |
| JP2012099609A (ja) | 高周波半導体装置 | |
| US11469192B2 (en) | Semiconductor device capable of realizing a wide band impedance matching | |
| US11979117B2 (en) | High frequency semiconductor amplifier | |
| JP6909837B2 (ja) | 高周波低雑音増幅器 | |
| JP6560287B2 (ja) | マイクロ波半導体装置 | |
| JP6494474B2 (ja) | 高周波半導体装置 | |
| JP2015041757A (ja) | 半導体装置 | |
| JP2017046297A (ja) | 高周波低雑音増幅器 | |
| JP6557561B2 (ja) | 高周波半導体装置 | |
| JP2017055224A (ja) | 高周波半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160822 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160822 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170728 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170829 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170921 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180327 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180427 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181002 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181101 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6430694 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |