JP6423893B2 - 加熱エレメントのための支持システム - Google Patents
加熱エレメントのための支持システム Download PDFInfo
- Publication number
- JP6423893B2 JP6423893B2 JP2016560655A JP2016560655A JP6423893B2 JP 6423893 B2 JP6423893 B2 JP 6423893B2 JP 2016560655 A JP2016560655 A JP 2016560655A JP 2016560655 A JP2016560655 A JP 2016560655A JP 6423893 B2 JP6423893 B2 JP 6423893B2
- Authority
- JP
- Japan
- Prior art keywords
- support
- heating element
- support system
- heating
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010438 heat treatment Methods 0.000 title claims description 147
- 239000000463 material Substances 0.000 claims description 14
- 239000003870 refractory metal Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16M—FRAMES, CASINGS OR BEDS OF ENGINES, MACHINES OR APPARATUS, NOT SPECIFIC TO ENGINES, MACHINES OR APPARATUS PROVIDED FOR ELSEWHERE; STANDS; SUPPORTS
- F16M13/00—Other supports for positioning apparatus or articles; Means for steadying hand-held apparatus or articles
- F16M13/02—Other supports for positioning apparatus or articles; Means for steadying hand-held apparatus or articles for supporting on, or attaching to, an object, e.g. tree, gate, window-frame, cycle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/06—Control, e.g. of temperature, of power
- H05B6/08—Control, e.g. of temperature, of power using compensating or balancing arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
111 支持メンバ
111a バー
111b バー
112 近位端部
113 遠位端部
121 ベースメンバ
131 ヒンジ
132 回転軸線
150 加熱エレメント
151 加熱エレメント
160 熱シールドシステム
Claims (10)
- 加熱エレメント(150、151)を支持するための支持システム(100)であって、
高さ方向に延びる主延在方向と、近位端部(113)と、遠位端部(112)を有する支持メンバ(111)であって、前記近位端部(113)が前記加熱エレメント(150,151)を支持するように構成された支持メンバ(111)と、
少なくとも1つのヒンジ(131)を介して、前記支持メンバ(111)の遠位部分に接続されたベースメンバ(121)であって、前記遠位部分が前記近位端部(113)から遠位に配置されたベースメンバ(121)と、を備え、
前記支持メンバ(111)が、前記ベースメンバ(121)に対して、実質的に剛性方向と平行な回転軸線(132)の周りに回動可能であることを特徴とする支持システム。 - 前記回転軸線(132)が、前記支持メンバの質量中心から離されて配置されていることを特徴とする請求項1記載の支持システム。
- 前記回転軸線(132)が、高さ方向及び可動方向の少なくとも一方に沿って、前記支持メンバの質量中心から離れて配置されていることを特徴とする請求項1又は2記載の支持システム。
- 前記ベースメンバが、高さ方向において前記遠位端部から前記近位端部(113)の方向に向かって、少なくとも部分的に延在していることを特徴とする請求項1〜3のいずれかに記載の支持システム。
- 前記支持メンバ(111)が、実質的に平行に配置された2以上のバー(111a、111b)を備えたことを特徴とする請求項1〜4のいずれかに記載の支持システム。
- 前記支持メンバ及び前記ベースメンバの少なくとも一方の材料が、少なくとも90重量%の高融点金属を含んでいることを特徴とする請求項1〜5のいずれかに記載の支持システム。
- 前記高融点金属が、タングステン、モリブデン、タンタル、レニウム、ニオビウム及びこれらの合金から選択されたものであることを特徴とする請求項6記載の支持システム。
- 少なくとも1つの加熱エレメント(150、151)と、請求項1〜7のいずれかに記載された少なくとも1つの支持システム(100)を有する加熱システム。
- 前記支持システム(100)は、異なる支持システムのそれぞれの可動方向が共通の中心点を始点とするように方向付けられていることを特徴とする請求項8記載の加熱システム。
- 前記加熱エレメント(150、151)の下方に、かつ前記ヒンジ(131)および前記ベースメンバ(121)の上方に配置されるとともに、前記支持システム(100)が挿通可能な開口を有する熱シールドシステム(160)を有することを特徴とする請求項8又は9記載の加熱システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/247,427 US9719629B2 (en) | 2014-04-08 | 2014-04-08 | Supporting system for a heating element and heating system |
US14/247,427 | 2014-04-08 | ||
PCT/EP2015/000144 WO2015154835A1 (en) | 2014-04-08 | 2015-01-27 | Supporting system for a heating element |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017516297A JP2017516297A (ja) | 2017-06-15 |
JP2017516297A5 JP2017516297A5 (ja) | 2018-01-18 |
JP6423893B2 true JP6423893B2 (ja) | 2018-11-14 |
Family
ID=52473857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016560655A Active JP6423893B2 (ja) | 2014-04-08 | 2015-01-27 | 加熱エレメントのための支持システム |
Country Status (8)
Country | Link |
---|---|
US (1) | US9719629B2 (ja) |
EP (1) | EP3130003B1 (ja) |
JP (1) | JP6423893B2 (ja) |
KR (1) | KR102276520B1 (ja) |
CN (1) | CN106165080B (ja) |
SG (1) | SG11201607804TA (ja) |
TW (1) | TWI623965B (ja) |
WO (1) | WO2015154835A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101749116B1 (ko) * | 2015-05-08 | 2017-06-20 | 엘지전자 주식회사 | 조리기기 |
JP1581406S (ja) * | 2016-10-14 | 2017-07-18 | ||
USD921431S1 (en) * | 2019-04-01 | 2021-06-08 | Veeco Instruments, Inc. | Multi-filament heater assembly |
JP1684469S (ja) * | 2020-09-24 | 2021-05-10 | 基板処理装置用天井ヒータ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354260A (ja) | 1998-06-11 | 1999-12-24 | Shin Etsu Chem Co Ltd | 複層セラミックスヒータ |
JP4398064B2 (ja) * | 2000-05-12 | 2010-01-13 | 日本発條株式会社 | 加熱装置 |
US6506252B2 (en) * | 2001-02-07 | 2003-01-14 | Emcore Corporation | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
US7645342B2 (en) * | 2004-11-15 | 2010-01-12 | Cree, Inc. | Restricted radiated heating assembly for high temperature processing |
US7573004B1 (en) * | 2006-02-21 | 2009-08-11 | Structured Materials Inc. | Filament support arrangement for substrate heating apparatus |
ES2343868T3 (es) * | 2007-12-18 | 2010-08-11 | Nestec S.A. | Dispositivo para preparar una bebida que comprende un mecanismo de cierre regulable. |
DE102009023472B4 (de) * | 2009-06-02 | 2014-10-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtungsanlage und Beschichtungsverfahren |
WO2011017060A2 (en) * | 2009-08-07 | 2011-02-10 | Applied Materials, Inc. | Dual temperature heater |
JP5480723B2 (ja) * | 2010-06-02 | 2014-04-23 | 助川電気工業株式会社 | 熱電子放出用フィラメントサポート |
US8785825B2 (en) * | 2010-06-25 | 2014-07-22 | Sandvik Thermal Process, Inc. | Support structure for heating element coil |
US9594724B2 (en) * | 2012-08-09 | 2017-03-14 | International Business Machines Corporation | Vector register file |
-
2014
- 2014-04-08 US US14/247,427 patent/US9719629B2/en active Active
-
2015
- 2015-01-21 TW TW104101883A patent/TWI623965B/zh active
- 2015-01-27 CN CN201580018462.9A patent/CN106165080B/zh active Active
- 2015-01-27 WO PCT/EP2015/000144 patent/WO2015154835A1/en active Application Filing
- 2015-01-27 KR KR1020167026884A patent/KR102276520B1/ko active IP Right Grant
- 2015-01-27 SG SG11201607804TA patent/SG11201607804TA/en unknown
- 2015-01-27 JP JP2016560655A patent/JP6423893B2/ja active Active
- 2015-01-27 EP EP15704707.7A patent/EP3130003B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201539530A (zh) | 2015-10-16 |
JP2017516297A (ja) | 2017-06-15 |
EP3130003B1 (en) | 2018-05-02 |
EP3130003A1 (en) | 2017-02-15 |
US9719629B2 (en) | 2017-08-01 |
CN106165080B (zh) | 2019-04-23 |
US20150289319A1 (en) | 2015-10-08 |
TWI623965B (zh) | 2018-05-11 |
CN106165080A (zh) | 2016-11-23 |
WO2015154835A1 (en) | 2015-10-15 |
SG11201607804TA (en) | 2016-10-28 |
KR102276520B1 (ko) | 2021-07-13 |
KR20160141722A (ko) | 2016-12-09 |
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