JP6421357B2 - 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板 - Google Patents
酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板 Download PDFInfo
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- JP6421357B2 JP6421357B2 JP2014515578A JP2014515578A JP6421357B2 JP 6421357 B2 JP6421357 B2 JP 6421357B2 JP 2014515578 A JP2014515578 A JP 2014515578A JP 2014515578 A JP2014515578 A JP 2014515578A JP 6421357 B2 JP6421357 B2 JP 6421357B2
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- Prior art keywords
- gallium oxide
- single crystal
- oxide single
- substrate
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Description
透過型電子顕微鏡にて転位を濃淡模様として観察し、その数を計測することにより測定されるか、又はX線トポグラフ法により回折X線強度のマッピングを行うことにより、転位を濃淡模様として測定される転位密度が5.0×10 5 個/cm 2 以上、3.5×106個/cm2以下である、ことを特徴とする。
第1の観点にかかる酸化ガリウム単結晶からなる、ことを特徴とする。
また、少なくとも1インチサイズであることが好ましい。
また、それぞれの基板作製に用いた酸化ガリウム単結晶のネッキング条件(ネック径及びシードタッチ温度)を同様に表1に示した。
2 酸化ガリウム融液
3 ルツボ
4 支持台
5 ダイ
5A スリット
5B 開口
6 蓋
7 熱電対
8 断熱材
9 ヒータ部
10 種結晶
11 種結晶保持具
12 シャフト
13 酸化ガリウム単結晶
21 酸化ガリウム単結晶基板
Claims (3)
- 透過型電子顕微鏡にて転位を濃淡模様として観察し、その数を計測することにより測定されるか、又はX線トポグラフ法により回折X線強度のマッピングを行うことにより、転位を濃淡模様として測定される転位密度が5.0×10 5 個/cm 2 以上、3.5×106個/cm2以下である、ことを特徴とする酸化ガリウム単結晶。
- 請求項1に記載の酸化ガリウム単結晶からなる、ことを特徴とする酸化ガリウム単結晶基板。
- 少なくとも1インチサイズである、ことを特徴とする請求項2に記載の酸化ガリウム単結晶基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012112115 | 2012-05-16 | ||
JP2012112115 | 2012-05-16 | ||
PCT/JP2013/062905 WO2013172227A1 (ja) | 2012-05-16 | 2013-05-08 | 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013172227A1 JPWO2013172227A1 (ja) | 2016-01-12 |
JP6421357B2 true JP6421357B2 (ja) | 2018-11-14 |
Family
ID=49583634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014515578A Active JP6421357B2 (ja) | 2012-05-16 | 2013-05-08 | 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150125699A1 (ja) |
EP (1) | EP2851458A4 (ja) |
JP (1) | JP6421357B2 (ja) |
CN (1) | CN104220650A (ja) |
TW (1) | TWI516647B (ja) |
WO (1) | WO2013172227A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4219803A1 (en) | 2022-01-31 | 2023-08-02 | Siltronic AG | Method and apparatus for producing electrically conducting bulk beta-ga2o3 single crystals and electrically conducting bulk beta-ga2o3 single crystal |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5756075B2 (ja) * | 2012-11-07 | 2015-07-29 | 株式会社タムラ製作所 | β−Ga2O3系単結晶の育成方法 |
JP2015164162A (ja) * | 2014-02-28 | 2015-09-10 | 株式会社タムラ製作所 | 半導体積層構造体及び半導体素子 |
CN109898135B (zh) * | 2014-07-02 | 2021-05-28 | 株式会社田村制作所 | β-Ga2O3系单晶衬底的制造方法 |
JP6060403B1 (ja) * | 2015-11-11 | 2017-01-18 | 並木精密宝石株式会社 | サファイア部材製造装置およびサファイア部材の製造方法 |
CN105603528B (zh) * | 2016-03-04 | 2018-07-27 | 同济大学 | 一种具有热释光性能的氧化镓晶体及其制备方法 |
CN106521625B (zh) * | 2016-12-14 | 2018-12-28 | 山东大学 | 掺四价铬氧化镓晶体及制备方法与应用 |
JP7147213B2 (ja) * | 2018-03-23 | 2022-10-05 | Tdk株式会社 | Efg法による単結晶育成用のダイ、efg法による単結晶育成方法及びefg法による単結晶 |
CN110911270B (zh) * | 2019-12-11 | 2022-03-25 | 吉林大学 | 一种高质量氧化镓薄膜及其同质外延生长方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3679097B2 (ja) * | 2002-05-31 | 2005-08-03 | 株式会社光波 | 発光素子 |
JP4831940B2 (ja) * | 2004-05-24 | 2011-12-07 | 株式会社光波 | 半導体素子の製造方法 |
US20070134833A1 (en) * | 2005-12-14 | 2007-06-14 | Toyoda Gosei Co., Ltd. | Semiconductor element and method of making same |
JP4858019B2 (ja) * | 2006-09-05 | 2012-01-18 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP5493092B2 (ja) * | 2010-01-28 | 2014-05-14 | 並木精密宝石株式会社 | 酸化ガリウム単結晶の製造方法および酸化ガリウム単結晶 |
JP5618318B2 (ja) * | 2010-03-12 | 2014-11-05 | 並木精密宝石株式会社 | 酸化ガリウム単結晶の製造方法及び製造装置 |
-
2013
- 2013-05-08 US US14/400,320 patent/US20150125699A1/en not_active Abandoned
- 2013-05-08 CN CN201380019173.1A patent/CN104220650A/zh active Pending
- 2013-05-08 JP JP2014515578A patent/JP6421357B2/ja active Active
- 2013-05-08 EP EP13791694.6A patent/EP2851458A4/en not_active Withdrawn
- 2013-05-08 WO PCT/JP2013/062905 patent/WO2013172227A1/ja active Application Filing
- 2013-05-09 TW TW102116476A patent/TWI516647B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4219803A1 (en) | 2022-01-31 | 2023-08-02 | Siltronic AG | Method and apparatus for producing electrically conducting bulk beta-ga2o3 single crystals and electrically conducting bulk beta-ga2o3 single crystal |
WO2023144000A1 (en) | 2022-01-31 | 2023-08-03 | Siltronic Ag | METHOD AND APPARATUS FOR PRODUCING ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTALS AND ELECTRICALLY CONDUCTING BULK ß-GA2O3 SINGLE CRYSTAL |
Also Published As
Publication number | Publication date |
---|---|
JPWO2013172227A1 (ja) | 2016-01-12 |
CN104220650A (zh) | 2014-12-17 |
US20150125699A1 (en) | 2015-05-07 |
EP2851458A1 (en) | 2015-03-25 |
TW201348533A (zh) | 2013-12-01 |
EP2851458A4 (en) | 2015-12-09 |
TWI516647B (zh) | 2016-01-11 |
WO2013172227A1 (ja) | 2013-11-21 |
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