JP6408270B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6408270B2
JP6408270B2 JP2014141330A JP2014141330A JP6408270B2 JP 6408270 B2 JP6408270 B2 JP 6408270B2 JP 2014141330 A JP2014141330 A JP 2014141330A JP 2014141330 A JP2014141330 A JP 2014141330A JP 6408270 B2 JP6408270 B2 JP 6408270B2
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plasma processing
processing apparatus
temperature sensor
disposed
sample stage
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Japanese (ja)
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JP2016018918A5 (enExample
JP2016018918A (ja
Inventor
宏治 永井
宏治 永井
恒彦 坪根
恒彦 坪根
和則 中本
和則 中本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2014141330A 2014-07-09 2014-07-09 プラズマ処理装置 Active JP6408270B2 (ja)

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JP2014141330A JP6408270B2 (ja) 2014-07-09 2014-07-09 プラズマ処理装置

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JP2014141330A JP6408270B2 (ja) 2014-07-09 2014-07-09 プラズマ処理装置

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JP2016018918A JP2016018918A (ja) 2016-02-01
JP2016018918A5 JP2016018918A5 (enExample) 2017-08-03
JP6408270B2 true JP6408270B2 (ja) 2018-10-17

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
KR102524258B1 (ko) * 2018-06-18 2023-04-21 삼성전자주식회사 온도 조절 유닛, 온도 측정 유닛 및 이들을 포함하는 플라즈마 처리 장치
KR102608957B1 (ko) * 2018-08-27 2023-12-01 삼성전자주식회사 플라즈마 처리 장치
KR102510306B1 (ko) 2020-04-21 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
WO2022201409A1 (ja) * 2021-03-25 2022-09-29 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155034U (enExample) * 1987-03-30 1988-10-12
JPH0281037U (enExample) * 1988-12-09 1990-06-22
JP2892787B2 (ja) * 1990-07-20 1999-05-17 東京エレクトロン株式会社 電気信号の抽出方法
JP3186008B2 (ja) * 1994-03-18 2001-07-11 株式会社日立製作所 ウエハ保持装置
JP3617294B2 (ja) * 1998-03-27 2005-02-02 Ｊｆｅスチール株式会社 金属体の温度を測定するシース熱電対の取付け方法
JP2000306883A (ja) * 1999-04-19 2000-11-02 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2002313900A (ja) * 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板保持構造体および基板処理装置
JP4071002B2 (ja) * 2002-01-25 2008-04-02 東京エレクトロン株式会社 真空処理装置
JP2007088411A (ja) * 2005-06-28 2007-04-05 Hitachi High-Technologies Corp 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法

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