JP6404580B2 - 電力制御モードのためのチャンバマッチング - Google Patents
電力制御モードのためのチャンバマッチング Download PDFInfo
- Publication number
- JP6404580B2 JP6404580B2 JP2014044455A JP2014044455A JP6404580B2 JP 6404580 B2 JP6404580 B2 JP 6404580B2 JP 2014044455 A JP2014044455 A JP 2014044455A JP 2014044455 A JP2014044455 A JP 2014044455A JP 6404580 B2 JP6404580 B2 JP 6404580B2
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- Prior art keywords
- plasma
- plasma chamber
- chamber
- free test
- power
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/26—Matching networks
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361784086P | 2013-03-14 | 2013-03-14 | |
| US61/784,086 | 2013-03-14 | ||
| US13/901,509 US9119283B2 (en) | 2013-03-14 | 2013-05-23 | Chamber matching for power control mode |
| US13/901,509 | 2013-05-23 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014197676A JP2014197676A (ja) | 2014-10-16 |
| JP2014197676A5 JP2014197676A5 (cg-RX-API-DMAC7.html) | 2017-04-06 |
| JP6404580B2 true JP6404580B2 (ja) | 2018-10-10 |
Family
ID=51524564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014044455A Active JP6404580B2 (ja) | 2013-03-14 | 2014-03-07 | 電力制御モードのためのチャンバマッチング |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9119283B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6404580B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102223834B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI609606B (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9337000B2 (en) | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
| US9401264B2 (en) * | 2013-10-01 | 2016-07-26 | Lam Research Corporation | Control of impedance of RF delivery path |
| US9412670B2 (en) * | 2013-05-23 | 2016-08-09 | Lam Research Corporation | System, method and apparatus for RF power compensation in plasma etch chamber |
| US9508529B2 (en) * | 2014-10-23 | 2016-11-29 | Lam Research Corporation | System, method and apparatus for RF power compensation in a plasma processing system |
| US10622217B2 (en) | 2016-02-04 | 2020-04-14 | Samsung Electronics Co., Ltd. | Method of plasma etching and method of fabricating semiconductor device using the same |
| US10020168B1 (en) * | 2017-07-20 | 2018-07-10 | Lam Research Corporation | Systems and methods for increasing efficiency of delivered power of a megahertz radio frequency generator in the presence of a kilohertz radio frequency generator |
| US10607815B2 (en) * | 2018-06-29 | 2020-03-31 | Applied Materials, Inc. | Methods and apparatuses for plasma chamber matching and fault identification |
| CN112017931B (zh) * | 2019-05-30 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 应用于等离子体系统的方法及相关等离子体系统 |
| CN113113282B (zh) * | 2021-04-01 | 2023-11-14 | 北京北方华创微电子装备有限公司 | 上电极电源功率调节方法、半导体工艺设备 |
| KR20240138176A (ko) * | 2023-03-10 | 2024-09-20 | 삼성전자주식회사 | Rf 전력 제공 장치 및 그것의 동작 방법 |
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2013
- 2013-05-23 US US13/901,509 patent/US9119283B2/en active Active
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2014
- 2014-03-07 JP JP2014044455A patent/JP6404580B2/ja active Active
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| Publication number | Publication date |
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| JP2014197676A (ja) | 2014-10-16 |
| TWI609606B (zh) | 2017-12-21 |
| US9119283B2 (en) | 2015-08-25 |
| KR102223834B1 (ko) | 2021-03-05 |
| KR20140113526A (ko) | 2014-09-24 |
| TW201503764A (zh) | 2015-01-16 |
| US20140265851A1 (en) | 2014-09-18 |
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