JP6392279B2 - 窒化膜の製造方法 - Google Patents
窒化膜の製造方法 Download PDFInfo
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- JP6392279B2 JP6392279B2 JP2016159402A JP2016159402A JP6392279B2 JP 6392279 B2 JP6392279 B2 JP 6392279B2 JP 2016159402 A JP2016159402 A JP 2016159402A JP 2016159402 A JP2016159402 A JP 2016159402A JP 6392279 B2 JP6392279 B2 JP 6392279B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Description
Claims (10)
- 窒素成分(N)及び水素成分(H)を含有する反応ガスを連続して供給し続ける単位サイクルを少なくとも1回以上行うが、
前記単位サイクルは、
基板上にソースガスを提供して、前記基板上に前記ソースガスの少なくとも一部が吸着される第1段階と、
前記基板上に第1パージガスを提供する第2段階と、
前記基板上に供給される前記反応ガスをプラズマの状態で提供することによって、前記基板上に単位蒸着膜を形成する第3段階と、
前記基板上に第2パージガスを提供する第4段階と、
前記単位蒸着膜の上に存在する不純物を除去するために、窒素ガス(N2)を含む後処理ガスをプラズマの状態で提供する第5段階と、
前記基板上に第3パージガスを提供する第6段階と、
を含む窒化膜の製造方法であって、
前記第3段階では、応力調節ガスが提供されない、
窒化膜の製造方法。 - 前記窒素成分(N)と水素成分(H)とを含有する反応ガスは、アンモニア(NH3)を含む請求項1に記載の窒化膜の製造方法。
- 前記後処理ガスは、窒素ガス(N2)であるか、または、窒素ガス(N2)とアルゴンガス(Ar)とからなる第2混合ガスである請求項1に記載の窒化膜の製造方法。
- 前記後処理ガスが窒素ガス(N2)であり、前記窒化膜の要求される圧縮応力が大きいほど、前記第5段階から前記単位蒸着膜の上に提供される前記窒素ガス(N2)の量を増やす請求項3に記載の窒化膜の製造方法。
- 前記後処理ガスが、窒素ガス(N2)とアルゴンガス(Ar)とからなる第2混合ガスであり、前記窒化膜の要求される圧縮応力が大きいほど、前記第5段階から前記単位蒸着膜の上に提供される前記アルゴンガス(Ar)に対する前記窒素ガス(N2)の相対的比率を高める請求項4に記載の窒化膜の製造方法。
- 前記後処理ガスは、前記第1パージガス、前記第2パージガス、及び前記第3パージガスのうち少なくとも何れか1つと同種の物質で構成されたガスである請求項1に記載の窒化膜の製造方法。
- 前記第5段階は、前記窒化膜の圧縮応力を追加的に調節するために、プラズマ発生電源のパワーまたは周波数を調節する段階を含む請求項1に記載の窒化膜の製造方法。
- 前記プラズマは、ダイレクトプラズマ方式またはリモートプラズマ方式によって形成される請求項1ないし請求項7のうち何れか一項に記載の窒化膜の製造方法。
- 前記プラズマは、前記基板上に配されたシャワーヘッド内に形成されて、前記シャワーヘッドの内部から活性化されたガスを前記基板上に提供することを特徴とする請求項1ないし請求項7のうち何れか一項に記載の窒化膜の製造方法。
- 前記第1パージガス、前記第2パージガスまたは前記第3パージガスが、前記第1段階ないし前記第6段階から持続的に供給される請求項1ないし請求項7のうち何れか一項に記載の窒化膜の製造方法。
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KR1020150133144A KR102080114B1 (ko) | 2015-09-21 | 2015-09-21 | 질화막의 제조방법 |
KR10-2015-0133144 | 2015-09-21 |
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JP2017063184A JP2017063184A (ja) | 2017-03-30 |
JP6392279B2 true JP6392279B2 (ja) | 2018-09-19 |
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JP (1) | JP6392279B2 (ja) |
KR (1) | KR102080114B1 (ja) |
CN (1) | CN106548923B (ja) |
TW (1) | TWI638903B (ja) |
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KR101793897B1 (ko) * | 2016-05-17 | 2017-11-06 | 주식회사 테스 | 발광소자의 보호막 증착방법 |
KR101967529B1 (ko) * | 2017-06-12 | 2019-04-09 | 에스케이머티리얼즈 주식회사 | 실리콘 질화막의 제조 방법 |
US11515151B2 (en) * | 2017-10-06 | 2022-11-29 | Applied Materials, Inc. | Methods and precursors for selective deposition of metal films |
CN114245832A (zh) * | 2019-06-07 | 2022-03-25 | 朗姆研究公司 | 原子层沉积期间的膜特性的原位控制 |
CN110218984B (zh) * | 2019-07-17 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 薄膜沉积方法 |
CN118103960A (zh) * | 2021-12-15 | 2024-05-28 | 株式会社国际电气 | 成膜方法、半导体器件的制造方法、成膜装置及程序 |
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JP4189386B2 (ja) * | 2005-01-27 | 2008-12-03 | ローム株式会社 | 窒化物半導体結晶層の成長方法および窒化物半導体発光素子の製法 |
JP6022166B2 (ja) * | 2011-02-28 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JP5922352B2 (ja) * | 2011-08-11 | 2016-05-24 | Sppテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
JP5712874B2 (ja) * | 2011-09-05 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP2013135126A (ja) * | 2011-12-27 | 2013-07-08 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法および基板処理装置 |
US8592328B2 (en) * | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
JP6078279B2 (ja) * | 2012-09-20 | 2017-02-08 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
JP6110420B2 (ja) * | 2014-02-28 | 2017-04-05 | ウォニク アイピーエス カンパニー リミテッド | 窒化膜の製造方法及び窒化膜の圧縮応力の制御方法 |
KR102179753B1 (ko) * | 2014-02-28 | 2020-11-17 | 주식회사 원익아이피에스 | 질화막의 제조방법 및 질화막의 압축 응력 제어방법 |
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2015
- 2015-09-21 KR KR1020150133144A patent/KR102080114B1/ko active IP Right Grant
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2016
- 2016-08-16 JP JP2016159402A patent/JP6392279B2/ja active Active
- 2016-08-31 CN CN201610791238.XA patent/CN106548923B/zh active Active
- 2016-09-09 TW TW105129358A patent/TWI638903B/zh active
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Publication number | Publication date |
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JP2017063184A (ja) | 2017-03-30 |
TW201712143A (zh) | 2017-04-01 |
CN106548923B (zh) | 2019-05-14 |
KR102080114B1 (ko) | 2020-02-24 |
KR20170034628A (ko) | 2017-03-29 |
TWI638903B (zh) | 2018-10-21 |
CN106548923A (zh) | 2017-03-29 |
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