JP6386106B2 - ビア又はトレンチの中に層を堆積する方法、及び当該方法によって得られる製品 - Google Patents

ビア又はトレンチの中に層を堆積する方法、及び当該方法によって得られる製品 Download PDF

Info

Publication number
JP6386106B2
JP6386106B2 JP2016575144A JP2016575144A JP6386106B2 JP 6386106 B2 JP6386106 B2 JP 6386106B2 JP 2016575144 A JP2016575144 A JP 2016575144A JP 2016575144 A JP2016575144 A JP 2016575144A JP 6386106 B2 JP6386106 B2 JP 6386106B2
Authority
JP
Japan
Prior art keywords
layer
deposition
substrate
depositing
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016575144A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017520683A (ja
JP2017520683A5 (ja
Inventor
ダラム ゴサイン，
ダラム ゴサイン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2017520683A publication Critical patent/JP2017520683A/ja
Publication of JP2017520683A5 publication Critical patent/JP2017520683A5/ja
Application granted granted Critical
Publication of JP6386106B2 publication Critical patent/JP6386106B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2016575144A 2014-06-23 2014-06-23 ビア又はトレンチの中に層を堆積する方法、及び当該方法によって得られる製品 Expired - Fee Related JP6386106B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/043610 WO2015199640A1 (en) 2014-06-23 2014-06-23 Method of depositing a layer in a via or trench and products obtained thereby

Publications (3)

Publication Number Publication Date
JP2017520683A JP2017520683A (ja) 2017-07-27
JP2017520683A5 JP2017520683A5 (ja) 2017-09-07
JP6386106B2 true JP6386106B2 (ja) 2018-09-05

Family

ID=51211334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016575144A Expired - Fee Related JP6386106B2 (ja) 2014-06-23 2014-06-23 ビア又はトレンチの中に層を堆積する方法、及び当該方法によって得られる製品

Country Status (5)

Country Link
JP (1) JP6386106B2 (zh)
KR (2) KR20170018074A (zh)
CN (1) CN106460148B (zh)
TW (1) TWI649804B (zh)
WO (1) WO2015199640A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022223096A1 (en) * 2021-04-19 2022-10-27 Applied Materials, Inc. Sputter deposition source, magnetron sputter cathode, and method of depositing a material on a substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0211758A (ja) * 1988-06-28 1990-01-16 Nec Corp スパッタ装置
US6143140A (en) * 1999-08-16 2000-11-07 Applied Materials, Inc. Method and apparatus to improve the side wall and bottom coverage in IMP process by using magnetic field
US6242348B1 (en) * 1999-10-04 2001-06-05 National Semiconductor Corp. Method for the formation of a boron-doped silicon gate layer underlying a cobalt silicide layer
TWI242052B (en) * 2004-03-19 2005-10-21 Promos Technologies Inc Physical vapor deposition process and apparatus thereof
JP2006083408A (ja) * 2004-09-14 2006-03-30 Shin Meiwa Ind Co Ltd 真空成膜装置
US7994002B2 (en) * 2008-11-24 2011-08-09 Applied Materials, Inc. Method and apparatus for trench and via profile modification
EP2306489A1 (en) * 2009-10-02 2011-04-06 Applied Materials, Inc. Method for coating a substrate and coater
JP2011091242A (ja) * 2009-10-23 2011-05-06 Elpida Memory Inc 半導体装置の製造方法

Also Published As

Publication number Publication date
CN106460148A (zh) 2017-02-22
CN106460148B (zh) 2018-12-04
JP2017520683A (ja) 2017-07-27
TW201614726A (en) 2016-04-16
KR20170018074A (ko) 2017-02-15
WO2015199640A1 (en) 2015-12-30
TWI649804B (zh) 2019-02-01
KR20170127051A (ko) 2017-11-20

Similar Documents

Publication Publication Date Title
JP6526071B2 (ja) 層を堆積する方法、トランジスタを製造する方法、電子デバイスのための層スタック、及び電子デバイス
JP4892227B2 (ja) 大面積基板のため改良型マグネトロンスパッタリングシステム
US7977255B1 (en) Method and system for depositing a thin-film transistor
US20110263079A1 (en) Interface protection layaer used in a thin film transistor structure
US9105527B2 (en) High Productivity Combinatorial material screening for stable, high-mobility non-silicon thin film transistors
JP2006005115A (ja) 薄膜トランジスタ及びその製造方法
JP6386106B2 (ja) ビア又はトレンチの中に層を堆積する方法、及び当該方法によって得られる製品
US9105526B2 (en) High productivity combinatorial material screening for metal oxide films
US20150027876A1 (en) Sputtering system and method of fabricating display device using the same
CN109072400B (zh) 用于基板的真空处理的方法和用于基板的真空处理的设备
JP2011142174A (ja) 成膜方法および半導体装置
US20160181430A1 (en) IGZO Devices with Metallic Contacts and Methods for Forming the Same
JP2017520683A5 (ja) ビア又はトレンチの中に層を堆積する方法、及び当該方法によって得られる製品
KR102142002B1 (ko) 기판 상의 재료 증착을 위한 방법, 재료 증착 프로세스를 제어하기 위한 제어기, 및 기판 상의 층 증착을 위한 장치
EP2796589B1 (en) Method of manufacturing an organic light-emitting display
US20240102152A1 (en) Method of depositing layers of a thin-film transistor on a substrate and sputter deposition apparatus
TW201913824A (zh) 製程零件、半導體製造設備及半導體製造方法
US20140110714A1 (en) High mobility compound semiconductor material using multiple anions
KR20240042662A (ko) 기판 상에 재료를 증착하는 방법, 및 대향 스퍼터 타깃들을 사용하여 기판 상에 재료를 증착하도록 구성된 시스템
KR20210097867A (ko) 스퍼터링 장치 및 스퍼터링 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170623

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170623

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20170623

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20170707

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20170928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180104

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180320

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180710

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180808

R150 Certificate of patent or registration of utility model

Ref document number: 6386106

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees