JP6382653B2 - 温度補償用誘電体材料及びその製造方法 - Google Patents
温度補償用誘電体材料及びその製造方法 Download PDFInfo
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
Description
TCC(ppm/℃)=106×(CT−C25/C25)/(T−25)
(Tは温度であり、CT及びC25は、それぞれ温度T及び25℃における静電容量である。)
特許文献2は、BaTiO3−CaZrO3−ZnO−SiO3系の材料で、温度係数−5000乃至−15000ppm/℃程度の組成物を開示しているが、この材料の比誘電率は700乃至1100程度に止まっている。
特許文献4は、CaTiO3−PbTiO3−La2O3−TiO2系で、温度係数−8700ppm/℃である組成物を開示しているが、比誘電率が1000以下であり、またPbを含有している。
[化1]
(Ba1−a−b−3c/2SraMgbLac)(Ti1−xSnx)O3
(前記[化1]において、aは0≦a<0.20、bは0<b<0.05、cは0<c<0.01、及びxは0<x<0.20である。)
[数式1]
誘電率の温度係数(TCC)(ppm/℃)=106×(CT−C25/C25)/(T−25)
(数式1において、Tは温度であり、CT及びC25はそれぞれ温度T及び25℃における静電容量である。)
[数式2]
比誘電率(K)=ε/ε0
(前記数式2において、εは温度補償用誘電体材料の誘電率であり、ε0は真空の誘電率である。)
[化1]
(Ba1−a−b−3c/2SraMgbLac)(Ti1−xSnx)O3
(前記[化1]において、aは0≦a<0.20、bは0<b<0.05、cは0<c<0.01、及びxは0<x<0.20である。)
[数式1]
誘電率の温度係数(TCC)(ppm/℃)=106×(CT−C25/C25)/(T−25)
(前記数式1において、Tは温度であり、CT及びC25はそれぞれ温度T及び25℃における静電容量である。)
[数式2]
比誘電率(K)=ε/ε0
(前記数式2において、εは温度補償用誘電体材料の誘電率であり、ε0は真空の誘電率である。)
Laの添加は、焼結時に粒成長を抑制し、Tcを下げながらも急激な誘電率の低下を防止することができる。Laが添加された時のLaの含量、つまり、cが0.01以上になると焼結性が急激に低くなり、誘電損失が大きくなり過ぎて適用が難しくなる。しかし、焼結のために焼結温度を上げると、Laが全部粒子内に固溶されて添加効果が微々たるものとなる。これにより、本発明の一実施形態では、Laの含量、cの範囲を0<c<0.01と制限した。
基礎原料として、BaCO3、TiO2、SnO2、La2O3、及びMgOと選択的にSrCO3を使用することができ、この基礎原料を前記化学式1の組成比範囲内で混合することができる。混合して得られた混合物を乾燥及びか焼して合成粉末を製造した後、成形及び焼結して製造することができる。この時、焼結は、1280乃至1360℃の温度で1乃至3時間行うことができる。
基礎原料として、BaCO3、TiO2、SnO2、SrCO3、La2O3、及びMgOを下記表1にある組成により計量した後、軽量した原料をアトリションミルで脱イオン水及び分散剤を添加して均一に混合し、真空フィルタリングした後、80乃至120℃で乾燥した。
Claims (5)
- 下記の化学式1で表されることを特徴とする温度補償用誘電体材料。
[化学式1]
(Ba1−a−b−3c/2SraMgbLac)(Ti1−xSnx)O3
(前記[化学式1]において、aは0≦a<0.20、bは0<b<0.05、cは0<c<0.01、及びxは0<x<0.20である。) - 前記温度補償用誘電体材料は、下記数式1で得られる誘電率の温度係数が−40乃至25℃の温度範囲と25乃至80℃の温度範囲とで、負(−)の値を有することを特徴とする請求項1に記載の温度補償用誘電体材料。
[数式1]
誘電率の温度係数(TCC)(ppm/℃)=106×(CT−C25/C25)/(T−25)
(前記数式1において、Tは温度であり、CT及びC25はそれぞれ温度T及び25℃における静電容量である。) - 前記温度補償用誘電体材料は、下記数式1で得られる誘電率の温度係数が−40乃至25℃の温度範囲と25乃至80℃の温度範囲とで−5000乃至−30000ppm/℃の値を有することを特徴とする請求項1に記載の温度補償用誘電体材料。
[数式1]
誘電率の温度係数(TCC)(ppm/℃)=106×(CT−C25/C25)/(T−25)
(前記数式1において、Tは温度であり、CT及びC25はそれぞれ温度T及び25℃における静電容量である。) - 前記温度補償用誘電体材料は、下記数式2で得られる比誘電率(25℃基準)が1000乃至3000の値を有することを特徴とする請求項1に記載の温度補償用誘電体材料。
[数式2]
比誘電率(K)=ε/ε0
(前記数式2において、εは温度補償用誘電体材料の誘電率であり、ε0は真空の誘電率である。) - BaCO3、TiO2、SnO2、La2O3及びMgOと選択的にSrCO3を含む原料を化学式1の組成比により混合して混合物を得るステップと、
前記混合物を1280乃至1360℃の温度で1乃至3時間焼結するステップと、
を含むことを特徴とする温度補償用誘電体材料の製造方法。
[化1]
(Ba1−a−b−3c/2SraMgbLac)(Ti1−xSnx)O3
(前記[化1]において、aは0≦a<0.20、bは0<b<0.05、cは0<c<0.01、及びxは0<x<0.20である。)
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JP2021191197A (ja) * | 2020-06-04 | 2021-12-13 | 株式会社ニコン | 振動体および振動波モータ |
CN111925199B (zh) * | 2020-07-03 | 2022-07-01 | 成都宏科电子科技有限公司 | 一种低温烧结微波介质陶瓷材料及其制备方法 |
CN112979314B (zh) * | 2021-04-19 | 2022-05-10 | 清华大学 | 一种中等介电常数高q微波介质陶瓷材料及其制备方法 |
CN114478007A (zh) * | 2022-02-17 | 2022-05-13 | 同济大学 | 一种具有良好工艺容忍性的高压电及高介电性能的铌酸钠基陶瓷材料及其制备方法与应用 |
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JPS6469514A (en) * | 1987-09-11 | 1989-03-15 | Ube Industries | Preparation of starting powder for condenser material |
JPH0340962A (ja) * | 1989-05-02 | 1991-02-21 | Japan Metals & Chem Co Ltd | 誘電体磁器組成物 |
JP3087657B2 (ja) | 1996-07-26 | 2000-09-11 | 株式会社村田製作所 | 誘電体磁器組成物 |
US6268054B1 (en) | 1997-02-18 | 2001-07-31 | Cabot Corporation | Dispersible, metal oxide-coated, barium titanate materials |
JP2000264724A (ja) * | 1999-03-18 | 2000-09-26 | Murata Mfg Co Ltd | 誘電体セラミック組成物及びセラミック多層基板 |
KR100646680B1 (ko) | 2004-06-04 | 2006-11-23 | 익스팬테크주식회사 | 유전체 자기 조성물 |
FR2900148B1 (fr) * | 2006-04-19 | 2008-07-11 | Centre Nat Rech Scient | Ceramiques a base de titanate de baryum dope au lanthane, nouveau procede de preparation et utilisations. |
JP4949220B2 (ja) * | 2007-12-25 | 2012-06-06 | 京セラ株式会社 | 誘電体磁器および積層セラミックコンデンサ |
KR101575244B1 (ko) | 2013-12-09 | 2015-12-08 | 현대자동차 주식회사 | 온도보상용 유전체 재료 및 이의 제조 방법 |
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