CN111925199B - 一种低温烧结微波介质陶瓷材料及其制备方法 - Google Patents
一种低温烧结微波介质陶瓷材料及其制备方法 Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 23
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- 238000009766 low-temperature sintering Methods 0.000 claims abstract description 19
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- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 15
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- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 4
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- 239000011777 magnesium Substances 0.000 claims description 2
- 238000010791 quenching Methods 0.000 claims description 2
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- 231100000331 toxic Toxicity 0.000 description 1
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Abstract
本发明属于电子陶瓷材料技术领域,提供了一种低温烧结微波介质陶瓷材料及其制备方法。该低温烧结微波介质陶瓷材料原料包括主晶相和Zn‑B‑Si‑Al玻璃粉;主晶相的化学式为CaxBa1‑x(SiO3)y(Al2O4)1‑y,其中0.95≤x≤0.975,0.965≤y≤0.983。该低温烧结微波介质陶瓷材的烧结温度低,具有优异的介电性能,应用范围广泛,性能稳定,可用于制造谐振器、滤波器、介质陶瓷基板等微波元器件。该制备方法通过分别采用研磨煅烧制得主晶相和Zn‑B‑Si‑Al玻璃粉,再低温烧结制得低温烧结微波介质陶瓷材料。工艺简单,绿色环保,可实现产业化批量生产。
Description
技术领域
本发明属于电子陶瓷材料技术领域,具体地说,涉及一种低温烧结微波介质陶瓷材料及其制备方法。
背景技术
微波介质陶瓷为现代移动通讯、卫星通讯和军用雷达等谐振器、滤波器、介质陶瓷基板等微波元器件的关键材料。
近年来,随着电子技术的不断发展,为了满足元器件的小型化、微型化、集成化和模块化,对制备元器件的微波介质陶瓷也提出了更高的要求。对微波介质陶瓷的介电性能的要求也越来越高。
微波介质陶瓷的介电性能主要包括介电常数、介电损耗和容量温度系数。近年来,对于微波介质陶瓷制备的能耗要求也越来越高。制备一种能耗低且具有优异介电性能的微波介质陶瓷成为了当前的热点。
发明内容
针对现有技术中上述的不足,本发明的第一目的在于提供了一种低温烧结微波介质陶瓷材料,该低温烧结微波介质陶瓷材料的烧结温度显著降低,能耗减少,且介电性能提高,具有优异的介电性能,应用范围广泛,性能稳定,可用于制造谐振器、滤波器、介质陶瓷基板等微波元器件。
针对现有技术中上述的不足,本发明的第二目的在于提供了一种低温烧结微波介质陶瓷材料的制备方法,该制备方法工艺简单,绿色环保,可实现产业化批量生产。
为了达到上述目的,本发明采用的解决方案是:
一种低温烧结微波介质陶瓷材料,其原料包括主晶相和Zn-B-Si-Al玻璃粉;主晶相的化学式为CaxBa1-x(SiO3)y(Al2O4)1-y,其中0.95≤x≤0.975,0.965≤y≤0.983。
一种如上述低温烧结微波介质陶瓷材料的制备方法,包括:(1)将CaCO3、BaCO3、SiO2和Al2O3按照主晶相的化学式进行配料得到混合料后进行球磨、烘干、过筛,再于1180-1200℃进行预烧3-5h后粉碎,得到主晶相粉;(2)将ZnO、H3BO3、Al2O3和SiO2进行配料,干磨混合,于1250-1350℃熔融后水淬,磨细烘干过320目筛,得到Zn-B-Si-Al玻璃粉;(3)将主晶相粉和Zn-B-Si-Al玻璃粉进行配料,球磨、过筛、烘干、压制,并于960-1050℃烧结2-3h,制得低温烧结微波介质陶瓷材料。
本发明提供的一种低温烧结微波介质陶瓷材料及其制备方法的有益效果是:
(1)本发明提供的该种低温烧结微波介质陶瓷材料,通过在主晶相CaxBa1-x(SiO3)y(Al2O4)1-y中加入可助烧的Zn-B-Si-Al玻璃粉末。该Zn-B-Si-Al玻璃粉末在较低的温度下会发生相变,随着温度升高该Zn-B-Si-Al玻璃粉末首先会生成粘性液相,并开始润湿和包覆粉体颗粒。
在烧结过程中,玻璃中Zn2+同时与两个O2-联结,使玻璃结构网络连续,使烧结温度降低;同时Zn2+进入主晶相晶格内,与Ca2+、Ba2+进行置换,引起晶格畸变,Zn2+能够将Zn-B-Si-Al形成玻璃体系带入晶格内,由于B-Si-Al是降温材料,进一步地引起降温。此时一部分Zn-B-Si-Al玻璃体系被带入主晶相的晶格中并填系在主晶格粒子之间,当液相完全填充到颗粒间后,毛细管压力形成,它既可促使颗粒重新排布,达到更紧密的空间堆集,又可使小的颗粒溶解在液相中,并通过液相扩散在大颗粒表面凝析,从而促进晶粒的均匀分布,加快烧结速度,实现降低烧结温度。而另一部分Zn-B-Si-Al玻璃体系包裹于主晶相晶格,从而起到进一步地降温的作用。
除了烧结温度下降,该低温烧结微波介质陶瓷材料的综合介电性能得以提高;应用范围广泛,性能稳定,可用于制造谐振器、滤波器、介质陶瓷基板等微波元器件。
(2)本发明提供的该种低温烧结微波介质陶瓷材料的制备方法,通过分别采用研磨煅烧制得主晶相和Zn-B-Si-Al玻璃,再通过研磨后低温烧结制得低温烧结微波介质陶瓷材料。该制备方法工艺简单,制备过程中均采用国产原材料,无铅、镉等有毒有害物质,绿色环保,可实现产业化批量生产。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将对本发明实施例中的技术方案进行清楚、完整地描述。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。
下面对本发明实施例提供的一种低温烧结微波介质陶瓷材料及其制备方法进行具体说明。
本发明实施例提供的一种低温烧结微波介质陶瓷材料,其原料包括主晶相、Zn-B-Si-Al玻璃粉和SrTiO3。其中,主晶相的化学式为CaxBa1-x(SiO3)y(Al2O4)1-y,其中0.95≤x≤0.975,0.965≤y≤0.983。
SrTiO3的加入能够使得锶离子进入主晶相取代钙离子、钛进入主晶相取代铝离子,从而引起晶格畸变,不仅能够进一步地降低烧结温度,还能够大大提升介电常数并调节容量温度系数。
进一步地,在本实施例中,按重量份数计,主晶相为74.77-93.02份,Zn-B-Si-Al玻璃粉为6.98-9.8份以及SrTiO3小于或等于16.82份。按照上述重量份数制备得到的低温烧结微波介质陶瓷材料,能够在960-1050℃之间进行烧结制得,烧结温度显著降低,且介电常数在7.8-12.6之间可调,1MHz下介质损耗2.3-3.8×10-4,容量温度系数0±30ppm/℃,介电性能显著提升。
本发明实施例提供的一种低温烧结微波介质陶瓷材料的制备方法,包括:(1)将CaCO3、BaCO3、SiO2和Al2O3按照主晶相的化学式进行配料,并同时加入金属氧化物得到混合料;在本实施例中,金属氧化物包括镁、锆和钛的氧化物中的至少一种,且金属氧化物的质量百分比为0.05-0.7%。上述金属氧化物的加入能够进一步起到调节损耗的作用。以二氧化锆球作为研磨介质,水为溶剂;按照料:球:水重量比为1:5-6:1.5-2.5进行研磨混合5-8h,得到第一混合浆料;将第一混合浆料在140℃下烘干并过40目筛,1180-1200℃进行预烧3-5h后粉碎,得到主晶相粉。
(2)将ZnO、H3BO3、Al2O3和SiO2进行配料,干磨混合,于1250-1350℃熔融后水淬,磨细烘干过320目筛,得到Zn-B-Si-Al玻璃粉。在本实施例中,ZnO、H3BO3、Al2O3和SiO2的质量比为28.46-31.72:36.13-38.08:17.81-18.86:14.10-15.42。在上述各原料的配比范围和熔融的温度范围内,Zn-B-Si-Al玻璃粉中的各元素能够紧密地连接并形成连续的玻璃结构网络。
(3)将SrCO3、TiO2按摩尔比为1:1进行配料,二氧化锆球为研磨介质,以水为溶剂;按照料:球:水重量比为1:5-6:1.5-2.5进行研磨混合5-8h,得到第三混合浆料;将第三混合浆料于140℃下烘干并过40目筛,于1280-1340℃进行预烧3-5h后粉碎,得到SrTiO3粉。
(4)将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉进行配料,以二氧化锆球为研磨介质,以水为溶剂;按照料:球:水重量比为1:5-6:1.5-2.5进行研磨混合18-45h,过320目筛,得到第二混合浆料,将第二混合浆料于140℃下烘干并过80目筛,得到干燥粉体;将干燥粉加入质量百分数为8-12%的石蜡后压制成圆片生坯,于960-1050℃烧结2-3h,制得低温烧结微波介质陶瓷材料。
上述制备方法每一步中均采用了研磨和煅烧,制备工艺简单,最终产品的烧结温度低,能耗小,制得的最终产品的介电性能优异。
以下结合实施例对本发明的特征和性能作进一步的详细描述。
实施例1
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,包括:(1)取x=0.95,y=0.983,将CaCO3、BaCO3、SiO2和Al2O3按照主晶相的化学式进行配料,并同时加入质量百分比为0.05%的镁氧化物;以二氧化锆球作为研磨介质,水为溶剂;按照料:球:水重量比为1:5-6:1.5-2.5进行研磨混合5-8h,得到第一混合浆料;将第一混合浆料在140℃下烘干并过40目筛,1180-1200℃进行预烧3-5h后粉碎,得到主晶相粉;(2)将ZnO、H3BO3、Al2O3和SiO2按照质量比为28.46:38.08:18.86:14.6进行配料,干磨混合,于1250-1350℃熔融后水淬,磨细烘干过320目筛,得到Zn-B-Si-Al玻璃粉;(3)将主晶相粉、Zn-B-Si-Al玻璃粉按照质量比为93.02:6.98进行配料,以二氧化锆球为研磨介质,以水为溶剂;按照料:球:水重量比为1:5-6:1.5-2.5进行研磨混合18-45h,过320目筛,得到第二混合浆料,将第二混合浆料于140℃下烘干并过80目筛,得到干燥粉体;将干燥粉加入质量百分数为8-12%的石蜡后压制成圆片生坯,于960-1050℃烧结2-3h,制得低温烧结微波介质陶瓷材料。
实施例2
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例1,不同之处在于步骤(2)与步骤(3)之间还包括:将SrCO3、TiO2按摩尔比为1:1进行配料,二氧化锆球为研磨介质,以水为溶剂;按照料:球:水重量比为1:5-6:1.5-2.5进行研磨混合5-8h,得到第三混合浆料;将第三混合浆料于140℃下烘干并过40目筛,于1280-1340℃进行预烧3-5h后粉碎,得到SrTiO3粉;以及步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为74.77:8.41:16.82进行配料。
实施例3
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例2,不同之处在于:步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为77.67:8.73:13.5进行配料。
实施例4
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例2,不同之处在于:步骤(1)中,取x=0.975,y=0.965,且加入质量百分比为0.7%的镁氧化物、锆氧化物和钛氧化物;步骤(2)中,ZnO、H3BO3、Al2O3和SiO2按照质量比为31.72:36.13:17.81:14.34进行配料;步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为78.43:9.8:11.77进行配料。
实施例5
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例4,不同之处在于:步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为78.74:5.91:15.35进行配料。
实施例6
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例4,不同之处在于:步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为76.92:9.61:13.47进行配料。
实施例7
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例2,不同之处在于:步骤(1)中,取x=0.96,y=0.975,且加入质量百分比为0.1%的锆氧化物和钛氧化物;步骤(2)中,ZnO、H3BO3、Al2O3和SiO2按照质量比为29.52:37.25:17.81:15.42进行配料;步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为77.97:9.74:12.29进行配料。
实施例8
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例7,不同之处在于:步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为76.92:7.69:15.39进行配料。
实施例9
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例7,不同之处在于:步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为76.62:8.05:15.33进行配料。
实施例10
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,具体方法可参照实施例7,不同之处在于:步骤(3)中,将主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉按照质量比为80.83:7.52:11.65进行配料。
对比例1
本实施例提供了一种低温烧结微波介质陶瓷材料的制备方法,包括:(1)取x=0.95,y=0.983,将CaCO3、BaCO3、SiO2和Al2O3按照CaxBa1-x(SiO3)y(Al2O4)1-y的化学式进行配料;以二氧化锆球作为研磨介质,水为溶剂;按照料:球:水重量比为1:5-6:1.5-2.5进行研磨混合5-8h,得到第一混合浆料;将第一混合浆料在140℃下烘干并过40目筛,1180-1200℃进行预烧3-5h后粉碎,得到CaxBa1-x(SiO3)y(Al2O4)1-y。
实施例1-10和对比例1的配方对比如表1:
表1
实验例1
实验方法:将实施例1-10制备得到的低温烧结微波介质陶瓷材料,以及对比例1提供的CaxBa1-x(SiO3)y(Al2O4)1-y,采用Agilient8722ET网络分析仪测试其介电常数(εr)、介质损耗因数(tgδ)和容量温度系数(αc),测试结果见表2:
表2
由表2数据可知,对比实施例1和对比例10可以看出,在主晶相CaxBa1-x(SiO3)y(Al2O4)1-y添加了Zn-B-Si-Al玻璃粉共同烧结制备得到的低温烧结微波介质陶瓷材料,虽然其介电损耗稍有增加,但其综合介电性能相较于单独的CaxBa1-x(SiO3)y(Al2O4)1-y有显著提升,尤其是烧结温度有显著下降,其介电常数增加,容量温度系数在0±30ppm/℃内。对比实施例2-10和对比例1可以看出,SrTiO3的加入能够提高介电性能。尤其是在本实施例中,主晶相粉、Zn-B-Si-Al玻璃粉和SrTiO3粉三者的配比范围内,能够在960-1050℃之间进行烧结制得低温烧结微波介质陶瓷材料,烧结温度显著降低,且介电常数提高至9.4-12.6,1MHz下介质损耗2.3-3.8×10-4,容量温度系数0±30ppm/℃,介电性能显著提升。
综上所述,采用本发明提供的低温烧结微波介质陶瓷材料及其制备方法;该低温烧结微波介质陶瓷材料的烧结温度显著降低,能耗减少,且介电性能显著提高,具有优异的介电性能,应用范围广泛,性能稳定,可用于制造制造谐振器、滤波器、介质陶瓷基板等微波元器件;该制备方法工艺简单,绿色环保,可实现产业化批量生产。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (6)
1.一种低温烧结微波介质陶瓷材料,其特征在于:其原料包括主晶相和Zn-B-Si-Al玻璃粉;所述主晶相的化学式为CaxBa1-x(SiO3)y(Al2O4)1-y,其中0.95≤x≤0.975,0.965≤y≤0.983;
按重量份数计,所述主晶相为74.77-93.02份,所述Zn-B-Si-Al玻璃粉为6.98-9.8份;
所述Zn-B-Si-Al玻璃粉的原料包括质量比为28.46-31.72:36.13-38.08:17.81-18.86:14.10-15.42的ZnO、H3BO3、Al2O3和SiO2。
2.根据权利要求1所述的低温烧结微波介质陶瓷材料,其特征在于:所述原料还包括SrTiO3;按重量份数计,所述SrTiO3小于或等于16.82份。
3.一种如权利要求1所述的低温烧结微波介质陶瓷材料的制备方法,其特征在于:包括:
(1)将CaCO3、BaCO3、SiO2和Al2O3按照所述主晶相的化学式进行配料得到混合料后进行球磨、烘干、过筛,再于1180-1200℃进行预烧3-5h后粉碎,得到主晶相粉;
(2)将所述ZnO、所述H3BO3、所述Al2O3和所述SiO2进行配料,干磨混合,于1250-1350℃熔融后水淬,磨细烘干过320目筛,得到所述Zn-B-Si-Al玻璃粉;
(3)将所述主晶相粉和所述Zn-B-Si-Al玻璃粉进行配料,球磨、过筛、烘干、压制,并于960-1050℃烧结2-3h,制得所述低温烧结微波介质陶瓷材料。
4.根据权利要求3所述的低温烧结微波介质陶瓷材料的制备方法,其特征在于:步骤(1)中,在球磨前,还包括向所述混合料中加入金属氧化物;所述金属氧化物包括镁、锆和钛的氧化物中的至少一种。
5.根据权利要求4所述的低温烧结微波介质陶瓷材料的制备方法,其特征在于:步骤(1)中,所述金属氧化物的质量百分比为0.05-0.7%。
6.一种如权利要求3所述的低温烧结微波介质陶瓷材料的制备方法,其特征在于:包括:
(1)将CaCO3、BaCO3、SiO2和Al2O3按照所述主晶相的化学式进行配料得到混合料后进行球磨、烘干、过筛,再于1180-1200℃进行预烧3-5h后粉碎,得到主晶相粉;
(2)将所述ZnO、所述H3BO3、所述Al2O3和所述SiO2进行配料,干磨混合,于1250-1350℃熔融后水淬,磨细烘干过320目筛,得到所述Zn-B-Si-Al玻璃粉;
(3)将SrCO3、TiO2按摩尔比为1:1进行配料,接着进行球磨、烘干、过筛,于1280-1340℃进行预烧3-5h后粉碎,得到SrTiO3粉;
(4)将所述主晶相粉、所述Zn-B-Si-Al玻璃粉和所述SrTiO3粉进行配料,球磨、过筛、烘干、压制,并于960-1050℃烧结2-3h,制得所述低温烧结微波介质陶瓷材料。
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