JP6380837B2 - 被覆層形成用スパッタリングターゲット材およびその製造方法 - Google Patents

被覆層形成用スパッタリングターゲット材およびその製造方法 Download PDF

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Publication number
JP6380837B2
JP6380837B2 JP2014158424A JP2014158424A JP6380837B2 JP 6380837 B2 JP6380837 B2 JP 6380837B2 JP 2014158424 A JP2014158424 A JP 2014158424A JP 2014158424 A JP2014158424 A JP 2014158424A JP 6380837 B2 JP6380837 B2 JP 6380837B2
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JP
Japan
Prior art keywords
atomic
coating layer
target material
sputtering target
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
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JP2014158424A
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English (en)
Japanese (ja)
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JP2015061933A (ja
Inventor
村田 英夫
英夫 村田
真史 上灘
真史 上灘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Metals Ltd
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Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to JP2014158424A priority Critical patent/JP6380837B2/ja
Publication of JP2015061933A publication Critical patent/JP2015061933A/ja
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Publication of JP6380837B2 publication Critical patent/JP6380837B2/ja
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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • B22F3/15Hot isostatic pressing
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/005Alloys based on nickel or cobalt with Manganese as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/03Alloys based on nickel or cobalt based on nickel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
JP2014158424A 2013-08-21 2014-08-04 被覆層形成用スパッタリングターゲット材およびその製造方法 Active JP6380837B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014158424A JP6380837B2 (ja) 2013-08-21 2014-08-04 被覆層形成用スパッタリングターゲット材およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013171072 2013-08-21
JP2013171072 2013-08-21
JP2014158424A JP6380837B2 (ja) 2013-08-21 2014-08-04 被覆層形成用スパッタリングターゲット材およびその製造方法

Publications (2)

Publication Number Publication Date
JP2015061933A JP2015061933A (ja) 2015-04-02
JP6380837B2 true JP6380837B2 (ja) 2018-08-29

Family

ID=52821353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014158424A Active JP6380837B2 (ja) 2013-08-21 2014-08-04 被覆層形成用スパッタリングターゲット材およびその製造方法

Country Status (4)

Country Link
JP (1) JP6380837B2 (zh)
KR (1) KR20150021891A (zh)
CN (1) CN104419903B (zh)
TW (1) TWI539010B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6823799B2 (ja) * 2015-10-01 2021-02-03 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP2019108571A (ja) * 2017-12-15 2019-07-04 三菱マテリアル株式会社 CuNi合金スパッタリングターゲットおよびCuNi合金粉末
CN115637412A (zh) * 2022-09-27 2023-01-24 芜湖映日科技股份有限公司 一种钼合金靶材及其制作工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4655281B2 (ja) * 2005-03-29 2011-03-23 日立金属株式会社 薄膜配線層
WO2010013636A1 (ja) * 2008-07-29 2010-02-04 株式会社アルバック 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法
JP5203908B2 (ja) * 2008-12-04 2013-06-05 新日鉄住金マテリアルズ株式会社 Ni−Mo系合金スパッタリングターゲット板
JP2011014654A (ja) * 2009-06-30 2011-01-20 Jx Nippon Mining & Metals Corp プリント配線板用銅箔
JP5532767B2 (ja) * 2009-09-04 2014-06-25 大同特殊鋼株式会社 Cu電極保護膜用NiCu合金ターゲット材
JP2012222166A (ja) * 2011-04-08 2012-11-12 Ulvac Japan Ltd 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法

Also Published As

Publication number Publication date
KR20150021891A (ko) 2015-03-03
CN104419903B (zh) 2017-09-19
CN104419903A (zh) 2015-03-18
TW201510231A (zh) 2015-03-16
JP2015061933A (ja) 2015-04-02
TWI539010B (zh) 2016-06-21

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