KR20150021891A - 피복층 형성용 스퍼터링 타깃재 및 그 제조 방법 - Google Patents
피복층 형성용 스퍼터링 타깃재 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20150021891A KR20150021891A KR20140106876A KR20140106876A KR20150021891A KR 20150021891 A KR20150021891 A KR 20150021891A KR 20140106876 A KR20140106876 A KR 20140106876A KR 20140106876 A KR20140106876 A KR 20140106876A KR 20150021891 A KR20150021891 A KR 20150021891A
- Authority
- KR
- South Korea
- Prior art keywords
- atomic
- coating layer
- sputtering target
- target material
- forming
- Prior art date
Links
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/005—Alloys based on nickel or cobalt with Manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013171072 | 2013-08-21 | ||
JPJP-P-2013-171072 | 2013-08-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20150021891A true KR20150021891A (ko) | 2015-03-03 |
Family
ID=52821353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20140106876A KR20150021891A (ko) | 2013-08-21 | 2014-08-18 | 피복층 형성용 스퍼터링 타깃재 및 그 제조 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6380837B2 (zh) |
KR (1) | KR20150021891A (zh) |
CN (1) | CN104419903B (zh) |
TW (1) | TWI539010B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190010701A (ko) * | 2015-10-01 | 2019-01-30 | 히타치 긴조쿠 가부시키가이샤 | 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019108571A (ja) * | 2017-12-15 | 2019-07-04 | 三菱マテリアル株式会社 | CuNi合金スパッタリングターゲットおよびCuNi合金粉末 |
CN115637412A (zh) * | 2022-09-27 | 2023-01-24 | 芜湖映日科技股份有限公司 | 一种钼合金靶材及其制作工艺 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4655281B2 (ja) * | 2005-03-29 | 2011-03-23 | 日立金属株式会社 | 薄膜配線層 |
WO2010013636A1 (ja) * | 2008-07-29 | 2010-02-04 | 株式会社アルバック | 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法 |
JP5203908B2 (ja) * | 2008-12-04 | 2013-06-05 | 新日鉄住金マテリアルズ株式会社 | Ni−Mo系合金スパッタリングターゲット板 |
JP2011014654A (ja) * | 2009-06-30 | 2011-01-20 | Jx Nippon Mining & Metals Corp | プリント配線板用銅箔 |
JP5532767B2 (ja) * | 2009-09-04 | 2014-06-25 | 大同特殊鋼株式会社 | Cu電極保護膜用NiCu合金ターゲット材 |
JP2012222166A (ja) * | 2011-04-08 | 2012-11-12 | Ulvac Japan Ltd | 配線膜、薄膜トランジスタ、ターゲット、配線膜の形成方法 |
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2014
- 2014-08-04 JP JP2014158424A patent/JP6380837B2/ja active Active
- 2014-08-18 KR KR20140106876A patent/KR20150021891A/ko active Search and Examination
- 2014-08-20 TW TW103128530A patent/TWI539010B/zh active
- 2014-08-21 CN CN201410415769.XA patent/CN104419903B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190010701A (ko) * | 2015-10-01 | 2019-01-30 | 히타치 긴조쿠 가부시키가이샤 | 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재 |
Also Published As
Publication number | Publication date |
---|---|
TW201510231A (zh) | 2015-03-16 |
JP2015061933A (ja) | 2015-04-02 |
CN104419903A (zh) | 2015-03-18 |
CN104419903B (zh) | 2017-09-19 |
TWI539010B (zh) | 2016-06-21 |
JP6380837B2 (ja) | 2018-08-29 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment |