JP6375332B2 - 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法 - Google Patents
太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法 Download PDFInfo
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Description
Claims (8)
- 第1半導体ウェハ層を第2半導体ウェハ層に接続する接着層を含む多接合半導体構造であって、前記接着層がカーボンナノチューブ膜にバインダ成分を浸透させたものであり、前記バインダ成分は、アルミナ、ハフニア、シリカ、窒化珪素、及びこれらの組み合わせから成るグループから選択される、多接合半導体構造。
- 前記接着層は、少なくとも800ナノメートルの波長において少なくとも85パーセントの光透過率を有する、請求項1に記載の多接合半導体構造。
- 前記接着層は、10ナノメートル〜100ナノメートルの範囲の厚さを有する、請求項1に記載の多接合半導体構造。
- 前記第2半導体ウェハ層は、1つのスペクトル域の光を吸収し、前記接着層は、前記スペクトル域全体に渡って少なくとも85パーセントの光透過率を有する、請求項1に記載の多接合半導体構造。
- 前記接着層は、接着層の垂直方向における1cm 2 あたりの電気抵抗が最大1Ωである、請求項1に記載の多接合半導体構造。
- 少なくとも1つの下部サブセルに接着層によって接続される少なくとも1つの上部サブセルを含む多接合太陽電池セル構造であって、前記接着層がカーボンナノチューブ膜にバインダ成分を浸透させたものであり、前記下部サブセルが1つのスペクトル域で動作し、前記接着層が、前記スペクトル域全体に渡って少なくとも85パーセントの光透過率を有し、前記バインダ成分は、アルミナ、ハフニア、シリカ、窒化珪素、及びこれらの組み合わせから成るグループから選択される、多接合太陽電池セル構造。
- 前記カーボンナノチューブ膜のなかのカーボンナノチューブは、1〜2ナノメートルの範囲の断面平均厚さを有する、請求項6に記載の多接合太陽電池セル構造。
- 前記バインダ成分は、金属酸化物、金属窒化物、半導体酸化物、半導体窒化物、ポリマー、及びシリコーンのうちの少なくとも1つを含む、請求項6に記載の多接合太陽電池セル構造。
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US12/814,722 | 2010-06-14 | ||
US12/814,722 US8993879B2 (en) | 2010-06-14 | 2010-06-14 | Solar cell structure and composition and method for forming the same |
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JP2013515335A Division JP6005634B2 (ja) | 2010-06-14 | 2011-04-28 | 太陽電池セル構造を形成する方法 |
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JP2016076946A Active JP6375332B2 (ja) | 2010-06-14 | 2016-04-07 | 太陽電池セル構造、及び同太陽電池セル構造を形成する組成物及び方法 |
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EP (1) | EP2580789B1 (ja) |
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CN105190911B (zh) * | 2013-03-14 | 2018-04-20 | 株式会社理光 | 化合物半导体光伏电池和其制造方法 |
US20150007864A1 (en) * | 2013-07-08 | 2015-01-08 | The Boeing Company | Adhesive Bonded Solar Cell Assembly |
US9425331B2 (en) * | 2014-08-06 | 2016-08-23 | The Boeing Company | Solar cell wafer connecting system |
JP2016121883A (ja) * | 2014-12-24 | 2016-07-07 | 日本写真印刷株式会社 | 圧力センサ |
FR3047350B1 (fr) * | 2016-02-03 | 2018-03-09 | Soitec | Substrat avance a miroir integre |
WO2020209010A1 (ja) * | 2019-04-09 | 2020-10-15 | 信越半導体株式会社 | 電子デバイスの製造方法 |
CN112216759A (zh) * | 2020-09-22 | 2021-01-12 | 中国电子科技集团公司第十八研究所 | 一种三端双面叠层太阳电池及其制备工艺 |
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US5328549A (en) | 1980-04-10 | 1994-07-12 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
US6683783B1 (en) * | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
JP2000277779A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 半導体間接着方法、この方法を使用して製造した半導体および半導体装置 |
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US8993879B2 (en) | 2015-03-31 |
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US11081609B2 (en) | 2021-08-03 |
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