JP6374169B2 - 研磨方法および研磨装置 - Google Patents

研磨方法および研磨装置 Download PDF

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Publication number
JP6374169B2
JP6374169B2 JP2014010800A JP2014010800A JP6374169B2 JP 6374169 B2 JP6374169 B2 JP 6374169B2 JP 2014010800 A JP2014010800 A JP 2014010800A JP 2014010800 A JP2014010800 A JP 2014010800A JP 6374169 B2 JP6374169 B2 JP 6374169B2
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JP
Japan
Prior art keywords
polishing
substrate
film thickness
measurement
wafer
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Active
Application number
JP2014010800A
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English (en)
Japanese (ja)
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JP2015136775A5 (enExample
JP2015136775A (ja
Inventor
恒男 鳥越
恒男 鳥越
裕史 大滝
裕史 大滝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2014010800A priority Critical patent/JP6374169B2/ja
Priority to KR1020150009142A priority patent/KR101998453B1/ko
Priority to US14/602,254 priority patent/US9524913B2/en
Priority to TW104101917A priority patent/TWI689373B/zh
Priority to SG10201500455QA priority patent/SG10201500455QA/en
Priority to CN201510032404.3A priority patent/CN104802069B/zh
Publication of JP2015136775A publication Critical patent/JP2015136775A/ja
Publication of JP2015136775A5 publication Critical patent/JP2015136775A5/ja
Application granted granted Critical
Publication of JP6374169B2 publication Critical patent/JP6374169B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2014010800A 2014-01-23 2014-01-23 研磨方法および研磨装置 Active JP6374169B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014010800A JP6374169B2 (ja) 2014-01-23 2014-01-23 研磨方法および研磨装置
KR1020150009142A KR101998453B1 (ko) 2014-01-23 2015-01-20 연마 방법 및 연마 장치
TW104101917A TWI689373B (zh) 2014-01-23 2015-01-21 研磨方法及研磨裝置
SG10201500455QA SG10201500455QA (en) 2014-01-23 2015-01-21 Polishing method and polishing apparatus
US14/602,254 US9524913B2 (en) 2014-01-23 2015-01-21 Polishing method and polishing apparatus
CN201510032404.3A CN104802069B (zh) 2014-01-23 2015-01-22 研磨方法及研磨装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014010800A JP6374169B2 (ja) 2014-01-23 2014-01-23 研磨方法および研磨装置

Publications (3)

Publication Number Publication Date
JP2015136775A JP2015136775A (ja) 2015-07-30
JP2015136775A5 JP2015136775A5 (enExample) 2016-12-15
JP6374169B2 true JP6374169B2 (ja) 2018-08-15

Family

ID=53687476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014010800A Active JP6374169B2 (ja) 2014-01-23 2014-01-23 研磨方法および研磨装置

Country Status (6)

Country Link
US (1) US9524913B2 (enExample)
JP (1) JP6374169B2 (enExample)
KR (1) KR101998453B1 (enExample)
CN (1) CN104802069B (enExample)
SG (1) SG10201500455QA (enExample)
TW (1) TWI689373B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9505101B1 (en) * 2015-06-24 2016-11-29 The Boeing Company Automated sanding system and method
US11400563B2 (en) * 2018-12-07 2022-08-02 Disco Corporation Processing method for disk-shaped workpiece
CN113195159B (zh) * 2018-12-19 2024-02-27 东京毅力科创株式会社 基板处理装置和基板处理方法
JP7349278B2 (ja) * 2019-07-11 2023-09-22 株式会社ディスコ 加工装置
KR102721977B1 (ko) * 2019-10-07 2024-10-28 삼성전자주식회사 반도체 기판 측정 장치, 이를 이용한 반도체 기판 처리 장치 및 반도체 소자 형성 방법
WO2022113795A1 (ja) * 2020-11-27 2022-06-02 東京エレクトロン株式会社 基板処理システム及び基板処理方法
CN116330162A (zh) * 2023-03-10 2023-06-27 华虹半导体(无锡)有限公司 一种cmp警报方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885138A (en) * 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
KR100253085B1 (ko) * 1997-07-10 2000-04-15 윤종용 측정장치를구비한웨이퍼폴리싱장치및폴리싱방법
US7097534B1 (en) * 2000-07-10 2006-08-29 Applied Materials, Inc. Closed-loop control of a chemical mechanical polisher
US6447370B1 (en) * 2001-04-17 2002-09-10 Speedfam-Ipec Corporation Inline metrology device
US6967715B2 (en) * 2002-12-06 2005-11-22 International Business Machines Corporation Method and apparatus for optical film measurements in a controlled environment
US7118451B2 (en) * 2004-02-27 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. CMP apparatus and process sequence method
JP2006093180A (ja) * 2004-09-21 2006-04-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2006231471A (ja) * 2005-02-25 2006-09-07 Speedfam Co Ltd 両面ポリッシュ加工機とその定寸制御方法
ITBO20070504A1 (it) * 2007-07-20 2009-01-21 Marposs Spa Apparecchiatura e metodo per il controllo dello spessore di un elemento in lavorazione
JP2009050944A (ja) * 2007-08-24 2009-03-12 Disco Abrasive Syst Ltd 基板の厚さ測定方法および基板の加工装置
JP5305729B2 (ja) * 2008-05-12 2013-10-02 株式会社荏原製作所 研磨方法及び研磨装置、並びに研磨装置制御用プログラム
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Also Published As

Publication number Publication date
SG10201500455QA (en) 2015-08-28
KR101998453B1 (ko) 2019-07-09
CN104802069A (zh) 2015-07-29
KR20150088193A (ko) 2015-07-31
JP2015136775A (ja) 2015-07-30
TW201536477A (zh) 2015-10-01
TWI689373B (zh) 2020-04-01
US9524913B2 (en) 2016-12-20
US20150221562A1 (en) 2015-08-06
CN104802069B (zh) 2018-09-28

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