JP6369436B2 - Penetration electrode substrate and method of manufacturing the penetration electrode substrate - Google Patents

Description

  The present invention relates to a through electrode substrate, a method for manufacturing the same, and a semiconductor device using the through electrode substrate.

  In recent years, development of a three-dimensional mounting technique in which semiconductor chips forming integrated circuits are vertically stacked has been advanced. The three-dimensional mounting technique is a technique for reducing the exclusive area in the planar direction of the semiconductor chip by stacking a plurality of semiconductor chips in the thickness direction of the semiconductor chip. In such a three-dimensional mounting technique, a through electrode is used as a three-dimensional wiring. For example, Patent Document 1 discloses a technique in which a through hole is formed in a semiconductor chip, a through electrode is formed by filling the inside of the through hole with a conductive layer, and both surfaces of the semiconductor chip are electrically connected. .

  However, the invention disclosed in Patent Document 1 that fills the inside of the through hole with the conductive layer (filling type) has a problem that it takes time to fill the inside of the through hole with the conductive layer. Thus, for example, Patent Document 2 discloses an invention (non-filling type) that shortens the process and improves productivity by forming a conductive layer only on the side wall of the through hole.

JP 2006-222138 A JP 2013-54213 A

  The unfilled through electrode disclosed in Patent Document 2 can shorten the process and improve the productivity as compared with the filled through electrode disclosed in Patent Document 1. However, in the unfilled through electrode, if the conductive layer is peeled off at the side wall of the through hole, a conduction failure occurs. Therefore, the adhesion between the side wall of the through hole and the conductive layer is important. In particular, in a through electrode having a high aspect ratio, it is difficult to ensure sufficient adhesion of the conductive layer formed on the side wall of the through hole, and further investigation is necessary.

  An object of this invention is to improve the adhesiveness of the conductive layer in the through-hole in a penetration electrode board | substrate.

  The manufacturing method of the penetration electrode substrate concerning one embodiment of the present invention has the 1st surface and the 2nd surface on the opposite side of the 1st surface, and the penetration hole which penetrates the 1st surface and the 2nd surface After preparing the formed substrate, forming a first conductive adhesive layer on the first surface and a part of the first surface side of the side wall of the through hole by sputtering, and forming the first conductive adhesive layer, A second conductive adhesion layer is formed by sputtering on a part of the second surface and the second surface side wall of the through hole, is in contact with the first conductive adhesion layer and the second conductive adhesion layer, and the first A seed layer disposed in contact with the side wall of the through hole exposed from the conductive adhesive layer and the second conductive adhesive layer is formed, and the conductive layer is formed on the seed layer by electrolytic plating that supplies power to the seed layer.

  According to the method for manufacturing the through electrode substrate, the adhesion of the conductive layer in the through hole in the through electrode substrate can be improved.

  The manufacturing method of the penetration electrode substrate concerning one embodiment of the present invention has the 1st surface and the 2nd surface on the opposite side of the 1st surface, and the penetration hole which penetrates the 1st surface and the 2nd surface After preparing the formed substrate, forming a first conductive adhesive layer on the first surface and a part of the first surface side of the side wall of the through hole by sputtering, and forming the first conductive adhesive layer, The second conductive adhesion layer is formed on the second surface and a part of the second surface side of the side wall of the through hole by sputtering, and the third conductive adhesion layer is formed on the first conductive adhesion layer. Forming a fourth conductive adhesive layer on the conductive adhesive layer, contacting the third conductive adhesive layer and the fourth conductive adhesive layer, and exposing the through-holes exposed from the first to fourth conductive adhesive layers; Forming a seed layer made of the same material as the third conductive adhesion layer and the fourth conductive adhesion layer in contact with the side wall, by electrolytic plating to supply power to the seed layer Forming a conductive layer on the seed layer.

  In another preferred embodiment, the third conductive adhesion layer and the fourth conductive adhesion layer may be formed by a sputtering method.

  According to the method for manufacturing the through electrode substrate, the adhesion of the conductive layer in the through hole in the through electrode substrate can be further improved.

  Moreover, in another preferable aspect, you may form an insulating filler in the through-hole in which the conductive layer was formed.

  According to the method for manufacturing the through electrode substrate, the sealing performance in the through hole can be improved.

  In another preferred embodiment, the seed layer may be formed by oblique vapor deposition.

  According to the method for manufacturing the through electrode substrate, the seed layer can be formed on the side wall of the through hole between the first conductive adhesion layer and the second conductive adhesion layer even in the through hole having a high aspect ratio. .

  Moreover, in another preferable aspect, the angle formed between the line parallel to the flight direction of the vapor deposition material and the perpendicular of the first surface may be 5 ° or more and 20 ° or less in the oblique vapor deposition.

  According to the method for manufacturing the through electrode substrate, the seed layer can be formed on the side wall of the through hole between the first conductive adhesion layer and the second conductive adhesion layer even in the through hole having a high aspect ratio. .

  A through electrode substrate according to an embodiment of the present invention has a first surface and a second surface opposite to the first surface, and is provided with a through hole penetrating the first surface and the second surface. A first conductive adhesion layer disposed on the first surface and a part of the first surface side of the side wall of the through hole, and a second surface and a part of the second surface side of the side wall of the through hole. A second conductive adhesion layer, a seed layer disposed in contact with the first conductive adhesion layer, the second conductive adhesion layer, and the side wall; and a conductive layer disposed on the seed layer.

  According to this through electrode substrate, the adhesion of the conductive layer in the through hole in the through electrode substrate can be enhanced.

  A through electrode substrate according to an embodiment of the present invention has a first surface and a second surface opposite to the first surface, and is provided with a through hole penetrating the first surface and the second surface. A first conductive adhesion layer disposed on the first surface and a part of the first surface side of the side wall of the through hole, and a second surface and a part of the second surface side of the side wall of the through hole. A second conductive adhesion layer, a third conductive adhesion layer disposed on the first conductive adhesion layer, a fourth conductive adhesion layer disposed on the second conductive adhesion layer, and a third A seed layer made of the same material as the third conductive adhesion layer and the fourth conductive adhesion layer, and a conductive layer arranged on the seed layer, disposed in contact with the conductive adhesion layer, the fourth conductive adhesion layer, and the side wall. And including.

  According to this through electrode substrate, the adhesion of the conductive layer in the through hole in the through electrode substrate can be further improved.

  In another preferred embodiment, an insulating filler may be disposed in the through hole in which the conductive layer is formed.

  According to this through electrode substrate, the sealing performance in the through hole can be improved.

  A semiconductor device according to an embodiment of the present invention includes the above-described through electrode substrate and the other two substrates or chips that are stacked and electrically connected to each other so that the through electrode substrate is disposed therebetween.

  A semiconductor device according to an embodiment of the present invention includes the above-described through electrode substrate and another substrate or a chip arranged side by side with the through electrode substrate.

  According to the present invention, the adhesion of the conductive layer in the through hole in the through electrode substrate can be enhanced.

It is a top view explaining the penetration electrode of the penetration electrode substrate concerning a 1st embodiment of the present invention. It is a flowchart explaining the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate provided with the penetration hole. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the insulating layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the 1st conductive adhesion layer was formed from one side. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the 2nd conductive adhesion layer was formed from the other side. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the seed layer was formed from one side. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the seed layer was formed from the other side. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the conductive layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate by which the conductive layer was patterned. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the 1st photosensitive resin layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the 2nd photosensitive resin layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate by which the 1st and 2nd photosensitive resin layers were patterned. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the wiring layer was formed. It is a figure which shows another example of the through-hole of the through-electrode board | substrate which concerns on 1st Embodiment of this invention. It is a figure which shows another example of the through-hole of the through-electrode board | substrate which concerns on 1st Embodiment of this invention. It is a figure which shows another example of the through-hole of the through-electrode board | substrate which concerns on 1st Embodiment of this invention. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a schematic diagram of a film deposition system by oblique vapor deposition. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing a sectional view of a penetration electrode substrate in which a conductive layer was formed by slant vapor deposition. In the manufacturing method of the penetration electrode substrate concerning a 2nd embodiment of the present invention, it is a mimetic diagram showing the section of the substrate in which the conductive layer was formed. It is a figure which shows the semiconductor device which concerns on 3rd Embodiment of this invention. It is a figure which shows another example of the semiconductor device which concerns on 3rd Embodiment of this invention. It is a figure which shows another example of the semiconductor device which concerns on 3rd Embodiment of this invention.

<First Embodiment>
Hereinafter, the manufacturing method of the through-hole board | substrate which concerns on 1st Embodiment of this invention is demonstrated in detail, referring drawings. In addition, embodiment shown below is an example of embodiment of this invention, This invention is limited to these embodiment, and is not interpreted. Note that in the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference symbols or similar symbols, and repeated description thereof may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

[Configuration of Through Electrode Substrate 1]
FIG. 1 is a top view illustrating a through electrode of a through electrode substrate according to the first embodiment of the present invention. In FIG. 13, the schematic diagram of the cross section along the AB line of FIG. 1 is shown. FIG. 1 is a view of the substrate 100 as viewed from the first surface 101 side. First, the configuration of the through electrode substrate 1 will be described with reference to FIGS. 1 and 13.

  The through electrode substrate 1 is configured such that, in the substrate 100 in which the through hole 90 is formed, the first surface 101 side of the substrate 100 and the second surface 102 side opposite to the first surface are electrically connected through the through hole 90. Conductive layers 61, 62, and 65 are formed to connect to the insulating layers 71, 72, and 75, the first conductive adhesion layers 11, 15, and the second between the conductive layers 61, 62, and 65 and the substrate 100. Conductive adhesion layers 22 and 25 and seed layers 31, 32 and 35 are formed.

  In the following description, the insulating layers 71, 72, and 75 are used when referring to those located on the first surface 101, the second surface 102, and the side wall of the through hole 90, respectively. Is sometimes referred to as an insulating layer 70. The first conductive adhesion layers 11 and 15 are used when referring to those located on the first surface 101 and on the side wall of the through-hole 90, respectively. There is a case. The second conductive adhesion layers 22 and 25 are used when referring to those located on the second surface 102 and on the side wall of the through-hole 90, respectively. Sometimes referred to as layer 20.

  The first conductive adhesion layer 10 and the second conductive adhesion layer 20 may be formed directly on the insulating layer 70 or may be formed via another intermediate layer (not shown). The seed layers 31, 32, and 35 are used when referring to those located on the first surface 101, the second surface 102, and the side wall of the through hole 90, respectively. Sometimes referred to as layer 30. The first conductive adhesion layer 10 and the second conductive adhesion layer 20 and the seed layer 30 may be provided so as to be in direct contact with each other, or may be formed via another intermediate layer (not shown). Also good. Further, the conductive layers 61, 62, 65 are used when referring to those located on the first surface 101, the second surface 102, and the side wall of the through hole 90, respectively. Sometimes referred to as layer 60.

  Insulating layers 71, 72, and 75 are formed on the first surface 101, the second surface 102, and the side walls of the through hole 90 according to the material of the substrate 100. Further, on the insulating layer 75, the first conductive adhesion layer 15 is formed on a part of the side surface of the through hole on the first surface side. A second conductive adhesion layer 25 is formed on a part of the side surface of the through hole on the second surface side. The first conductive adhesion layer 15 and the second conductive adhesion layer 25 are separated in the vicinity of the center of the through hole in the illustrated example. Here, in FIG. 13, the end portions of the first conductive adhesion layer 15 and the second conductive adhesion layer 25 are clear, but the end portions of the first conductive adhesion layer 15 and the second conductive adhesion layer 25 are clear. Instead, for example, a shape in which the film thickness gradually decreases may be used.

  The first conductive adhesion layer 15 and the second conductive adhesion layer 25 separated in the vicinity of the center of the through hole are electrically connected by a seed layer 35 formed thereon. The seed layer 35 includes the first conductive adhesion layer 15, the second conductive adhesion layer 25, and the insulating layer 75 on the side wall of the through hole exposed from the first conductive adhesion layer 15 and the second conductive adhesion layer 25. It is formed in contact with a part. Further, a conductive layer 65 is formed on the seed layer 35. The conductive layer 65 conducts the first surface 101 and the second surface 102 of the substrate 100. The conductive layers 61 and 62 may serve as wirings, lands, electrodes, or the like. The remaining portion (inside the conductive layer 65) in the through hole 90 is filled with an insulating filling member 85. The insulating filling member 85 can be typically made of an organic insulating material.

  As shown in FIG. 13, an interlayer insulating layer 81 is formed on the first surface 101 of the substrate 100, and an interlayer insulating layer 82 is formed on the second surface 102 of the substrate 100. Two or more of the interlayer insulating layers 81 and 82 and the insulating filling member 85 may be made of the same material, or may be made of different materials. In the following description, when the interlayer insulating layers 81 and 82 are not distinguished from each other, they may be referred to as interlayer insulating layers 80. In this example, the interlayer insulating layer 80 is directly formed on the first surface 101 and the second surface 102 of the substrate 100, but another structure (wiring, transistor, capacitor, coil, etc.) is interposed between them. It may be included. In addition, although the structure which has the conductive layers 61 and 62 and the interlayer insulation layer 80 one layer is shown, not only this but the structure which laminated | stacked two or more layers may be sufficient.

  The interlayer insulating layer 80 can be composed of an organic insulating material, an inorganic insulating material, or the like. Alternatively, an organic insulating material and an inorganic insulating material may be stacked. The opening 111 is formed on the first surface 101 side of the substrate 100, and the opening 112 is formed on the second surface 102 side of the substrate 100. When the openings 111 and 112 are not distinguished from each other, they may be referred to as openings 110.

[Process flow of through electrode substrate 1]
FIG. 2 is a flowchart illustrating a method for manufacturing the through electrode substrate according to the first embodiment of the present invention. The through electrode substrate manufacturing method includes a step of forming a through hole 90 penetrating the first surface 101 of the substrate 100 and the second surface 102 opposite to the first surface 101 (step S201), and the first surface 101. Forming the first conductive adhesion layer 10 from the side (step S202), forming the second conductive adhesion layer 20 from the second surface 102 side (step S203), the first conductive adhesion layer 10, Step of forming the seed layer 30 disposed in contact with the two conductive adhesion layer 20 and in contact with the first conductive adhesion layer 10 and the side wall of the through hole 90 exposed from the second conductive adhesion layer 20 (step S204) ), A step of forming the conductive layer 60 on the seed layer 30 (step S205), a step of etching the first conductive adhesive layer, the second conductive adhesive layer, the seed layer, and the conductive layer to form a desired pattern. (Step S It is equipped with a 06). Hereinafter, each process is demonstrated in order using a figure. In addition, this manufacturing method of a penetration electrode substrate does not prevent other processes being included between each process.

[Method of Manufacturing Penetration Electrode Substrate 1]
First, step S201 shown in FIG. 2 will be described with reference to FIGS. FIG. 3 is a schematic view showing a cross section of a substrate provided with through holes in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. First, a through hole 90 that penetrates the first surface 101 and the second surface 102 is formed in the substrate 100.

  In this example, the substrate 100 is a silicon substrate. In addition to silicon, the substrate 100 may be made of a silicon compound such as silicon carbide, a semiconductor such as gallium arsenide, quartz, glass, sapphire, or the like, or may be a laminate of these. Although there is no restriction | limiting in particular in the thickness of the board | substrate 100, For example, they are 100 micrometers-800 micrometers.

  The through-hole 90 forms a mask (not shown) on one surface (for example, the first surface 101) of the substrate 100, and performs RIE (Reactive Ion Etching), DRIE (Deep RIE: deep digging reactivity). It can be formed by dry etching processing such as ion etching), sand blast processing, laser processing or the like. The through-hole 90 is formed by forming a bottomed hole that does not penetrate in the thickness direction in the substrate and then polishing and opening a surface opposite to one surface (for example, the second surface 102). Also good. There is no restriction | limiting in particular in the magnitude | size of the opening of the through-hole 90, For example, it can be set as 10 micrometers-100 micrometers. Moreover, there is no restriction | limiting about the shape of the through-hole 90, Although it is typically circular, A rectangle and a polygon may be sufficient other than circular. Although depending on the use of the through electrode substrate 1, for example, the aspect ratio of the through hole 90 is 5 or more, preferably 8 or more. The aspect ratio refers to a value obtained by dividing the depth value of the through hole 90 by the size of the opening of the through hole. One or more such through holes 90 are disposed in the substrate 100.

  In each drawing, the through-hole 90 shows a straight shape in the thickness direction of the through-electrode substrate 1, but the present invention is not limited to this. For example, the opening on the first surface 101 side as shown in FIG. The taper shape may be larger than the opening on the side. Further, the shape is not limited to the tapered shape, and may be a concave shape in which the central portion of the through hole 90 as shown in FIG. 16 is concave, or a convex shape in which the central portion of the through hole 90 is convex as shown in FIG. .

  FIG. 4 is a schematic view showing a cross section of the substrate on which the insulating layer is formed in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. As shown in FIG. 4, an insulating layer 70 (insulating layers 71, 72, 75) is formed on the substrate 100 shown in FIG. This insulating layer 70 may be formed at least on the side wall of the through hole 90.

  The insulating layer 70 is, for example, a single layer film made of one material selected from inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride, and organic insulating materials such as polyimide and benzocyclobutene, or 2 It may be a laminated film made of the above materials. The insulating layer 70 is formed by a CVD method (plasma CVD method, thermal CVD method, etc.), a PVD method (evaporation method, sputtering method, etc.), a thermal oxidation method, a spray coating method, or the like. The thickness of the insulating layer 70 is not particularly limited as long as desired insulating properties can be obtained, but may be 0.5 μm to 5 μm, for example. Note that another structure may exist between the first surface 101 of the substrate 100 and the insulating layer 71. In the case where the substrate is a substrate having insulating properties such as quartz, glass, sapphire, etc., the presence of the insulating layer 70 is arbitrary.

  Next, step S202 shown in FIG. 2 will be described with reference to FIG. FIG. 5 is a schematic view showing a cross section of a substrate on which a first conductive adhesion layer is formed from one side surface in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. A first conductive adhesion layer 10 is formed on the substrate 100 shown in FIG. The first conductive adhesion layer 10 is formed on the insulating layer 70 from the first surface 101 side. The first conductive adhesion layer 10 is formed by a sputtering method.

  The sputtering method is a film-forming method in which film-forming atoms reach the substrate with high energy, but in order to stabilize the discharge, for example, 0.1 to 1.0 Pa of Ar gas is introduced into the chamber. To introduce. The deposition source cluster sputtered by Ar gas ions has a high probability of colliding with Ar atoms during flight, the traveling direction is changed, and the directivity of the cluster is lowered. As a result, when a film is formed from the first surface side on a through hole having a high aspect ratio with an aspect ratio exceeding 5, as shown in FIG. 5, the first film formed on the side wall of the through hole is formed. The position of the end portion of the conductive adhesion layer 15 is a position that is not more than half of the depth of the through hole with respect to the first surface 101 side.

  In the present invention, since the film-forming atoms that have reached the substrate react with the base film with surplus energy by a sputtering method in which the film-forming atoms reach the substrate with high energy, good adhesion can be obtained. . When film formation is performed by the sputtering method, a mixing layer in which the base atoms and film formation atoms are mixed is formed at the interface between the base film and the sputtering film, and the base film and the sputtering film have good adhesion due to this mixing layer. Can be obtained.

  Next, step S203 shown in FIG. 2 will be described with reference to FIG. FIG. 6 is a schematic view showing a cross section of the substrate on which the second conductive adhesion layer is formed from the other side in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. A second conductive adhesion layer 20 (second conductive adhesion layers 22 and 25) is formed on the substrate 100 shown in FIG. The second conductive adhesion layer 20 is formed on the insulating layer 70 from the second surface 102 side opposite to the first surface 101. The second conductive adhesion layer 20 is formed by a sputtering method in the same manner as the first conductive adhesion layer 10. As a result, as shown in FIG. 6, the position of the end portion of the second conductive adhesion layer 25 formed on the side wall of the through hole is less than half the depth of the through hole with respect to the second surface 102 side. The first conductive adhesion layer 15 and the second conductive adhesion layer 25 are formed separately on the side wall of the through hole. At this time, in the side wall of the through hole, the insulating layer 75 on the side wall of the through hole is exposed in the vicinity of the center between the first surface 101 and the second surface 102 in the depth direction of the through hole.

  The first conductive adhesion layer 15 and the second conductive adhesion layer 25 have good adhesion to the underlying insulating layer 75, for example, titanium (Ti), chromium (Cr), aluminum (Al), a compound thereof, or These alloys can be used. The thicknesses of the first conductive adhesion layer 15 and the second conductive adhesion layer 25 are not particularly limited, but may be, for example, 50 nm to 400 nm. The first conductive adhesion layer 15 and the second conductive adhesion layer 25 may be the same material or different materials.

  Although 1st Embodiment demonstrated the example which formed the film | membrane with high adhesiveness by sputtering method, it is not limited to this. For example, good adhesion can be obtained by using a material utilizing reactivity with the base film. For example, when the base film is silicon oxide, good adhesion can be obtained by using a material whose oxide enthalpy is lower than that of silicon. For example, when titanium having a lower oxide formation enthalpy than silicon is deposited on silicon oxide, oxygen atoms near the interface between silicon oxide and titanium tend to be titanium oxide, which is more stable than silicon oxide. Bonds with titanium using the energy of the film. That is, since the interface between silicon oxide and titanium is scientifically bonded, good adhesion can be obtained. That is, as a material used for the conductive layer, good adhesion can be obtained by using a material in which the oxide or nitride of the conductive layer has a lower generation enthalpy than the oxide or nitride of the base film. It is considered possible.

  Next, step S204 shown in FIG. 2 will be described with reference to FIGS. FIG. 7 is a schematic view showing a cross section of a substrate on which a seed layer is formed from one side surface in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. The seed layer 30 (seed layers 31 and 35) is formed by oblique deposition. A detailed method of oblique deposition will be described later (see FIGS. 19 and 20).

  FIG. 8 is a schematic view showing a cross section of the substrate on which the seed layer is formed from the other side in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. Here again, the seed layer 30 (seed layers 32 and 35) is formed by oblique deposition from the second surface side of the substrate in the same manner as in FIG. Subsequently, by performing oblique deposition also from the second surface side, a seed layer 35 having a substantially uniform film thickness is formed inside the through hole in the depth direction of the through hole. Here, in the first embodiment, an example in which the seed layer 30 is formed by oblique vapor deposition has been shown, but the present invention is not limited to this, and for example, electroless plating may be used. Thereby, most of the seed layer 30 formed by a method other than the sputtering method is formed on the first conductive adhesion layer 15 and the second conductive adhesion layer 25 in the side wall of the through hole 90, so that the lower layer is formed. Improved adhesion. Here, the seed layer 35 is formed so as to get over the stepped portions of the first conductive adhesive layer 15 and the second conductive adhesive layer 25. It is considered that the seed layer 35 and the first conductive adhesion layer 15 or the second conductive adhesion layer 25 are in contact with each other at the step portion, whereby an anchor effect is obtained and peeling of the seed layer 30 can be suppressed.

  Here, the seed layer 30 functions as a layer that supplies power by electrolytic plating when a conductive layer is formed in a later step. The seed layer 30 is preferably made of the same material as the conductive layer, and copper (Cu), silver (Ag), gold (Au), or the like can be used. Although there is no restriction | limiting in particular in the film thickness of the seed layer 30, For example, it is good to set it as the range of 0.1 micrometer or more and 1.0 micrometer or less. Preferably, it is 600 nm or more and 900 nm or less. By setting it as such a range, the film thickness of the conductive layer formed in the through-hole 90 can be controlled uniformly.

  Next, step S205 shown in FIG. 2 will be described with reference to FIG. FIG. 9 is a schematic view showing a cross section of the substrate on which the conductive layer 60 is formed in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. Although not shown, in order to obtain the structure shown in FIG. 9, first, a film-like resist called a photosensitive dry film resist is formed on both surfaces of the substrate 100 on which the seed layer 30 is formed, and the conductive layer is formed by photolithography. A mask in which a region to be formed is opened is formed. Next, in a masked state, power is supplied to the seed layer 30 and electrolytic plating is performed, thereby forming a conductive layer 60 (conductive layers 61, 62, 65) as shown in FIG. For example, Cu, Ag, Au, or the like can be used as the material of the conductive layer. Among these, Cu is preferable because of its low material cost. By forming the thin film along the side wall of the through hole 90, the production efficiency is improved. Although there is no restriction | limiting in particular in the film thickness of the conductive layer 60, For example, it is good to set it as the range of 1 micrometer or more and 20 micrometers or less. The thickness is preferably 3 μm or more and 15 μm or less. By setting it as such a range, the penetration electrode with favorable electroconductivity can be obtained.

  The formation of the conductive layer 60 on the side wall of the through-hole 90 and the first surface or the second surface of the substrate may be performed in separate steps, but the production efficiency is improved by performing the electrolytic plating step capable of forming the above simultaneously. improves. In addition, since a conductive layer is formed on the side wall of the through-hole 90 and the first surface or the second surface of the substrate in the electrolytic plating process, the film thickness of the conductive layer at each location is substantially the same value. Thereafter, the mask is removed from the substrate 100. Through the above steps, the structure shown in FIG. 9 can be obtained.

  Next, step S206 shown in FIG. 2 will be described with reference to FIG. FIG. 10 is a schematic view showing a cross section of a substrate on which a conductive layer is patterned in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. The structure shown in FIG. 10 is obtained by etching the structure shown in FIG. 9 from the first surface side and the second surface side. Etching may be dry etching or wet etching. Dry etching has the advantage of shortening the process because the first conductive adhesion layer, the second conductive adhesion layer, and the seed layer can be etched at once, and the conductive layer 65 formed on the side wall of the through-hole is formed. Since the etching is hardly performed, the shape change of the conductive layer 65 can be suppressed. Also, wet etching has the advantage of shortening the process because the first surface and the second surface can be etched simultaneously.

  In the first embodiment, the method for forming the conductive layer after patterning has been described. However, when the conductive layer 60 is not used, the patterning may be performed after the seed layer 30 is formed.

  FIG. 11 is a schematic view showing a cross section of the substrate on which the first photosensitive resin layer is formed in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. A first photosensitive resin layer 89 is formed on the second surface 102 side of the substrate 100 shown in FIG. The first photosensitive resin layer 89 is formed by a laminating apparatus or the like using, for example, a negative dry film resist. A part of the first photosensitive resin layer 89 is partially introduced into the through hole 90. The dry film resist to be used is not limited to the negative type but may be a positive type.

  At this time, the opening on the second surface 102 side of the through hole 90 is closed by the first photosensitive resin layer 89. The first photosensitive resin layer 89 may be formed using a material other than the dry film resist as long as the opening on the second surface 102 side of the through hole 90 is closed. It may be a liquid resist having a high viscosity (for example, 20 cp or more).

  FIG. 12 is a schematic view showing a cross section of the substrate on which the second photosensitive resin layer is formed in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. As shown in FIG. 12, a second photosensitive resin layer 88 is formed on the first surface 101 side of the substrate 100. The second photosensitive resin layer 88 is formed by a laminating apparatus or the like using, for example, a negative dry film resist. The dry film resist to be used is not limited to the negative type but may be a positive type.

  At this time, the surrounding environment of the substrate 100 is laminated in a reduced pressure state (pressure lower than atmospheric pressure). Thereby, the dry film resist of the second photosensitive resin layer 88 is introduced into the through hole 90 and comes into contact with the first photosensitive resin layer 89. Thereby, the photosensitive resin layer is filled in the through hole 90, that is, the insulating filling member 85 is formed. In the state shown in FIG. 10, the first photosensitive resin layer 89 and the second photosensitive resin layer 88 are filled in a portion remaining as a space in the through hole 90 (a portion surrounded by the conductive layer 65). Is done. Since the second photosensitive resin layer 88 is laminated while the gas in the through hole 90 is exhausted under a reduced pressure state, it is possible to suppress the generation of voids or the like in the through hole 90. In this specification, the term “filling” is not limited to the case where the space (void or the like) is completely eliminated, but does not exclude the case where a slight space remains inside the through hole 90.

  In the case of forming the second photosensitive resin layer 88, it is desirable that the pressure in the surrounding environment of the substrate 100 when laminating the dry film resist is as close to a vacuum as possible. Thereby, it becomes easy to introduce the dry film resist into the through hole 90. The method is not limited to the above method, and the photosensitive resin layer may be formed on the first surface and the second surface after the through hole 90 is filled with an insulating material.

  FIG. 13 is a schematic view showing a cross section of the substrate on which the first and second photosensitive resin layers are patterned in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. Patterning by photolithography is performed on the first photosensitive resin layer 89 and the second photosensitive resin layer 88 formed on the substrate 100 in FIG. Thereby, as shown in FIG. 13, an opening 111 reaching the conductive layer 61 and an opening 112 reaching the conductive layer 62 are formed. Thereafter, the photosensitive resin layer may be baked. FIG. 13 shows the interlayer insulating layer 80 (interlayer insulating layers 81 and 82) and the insulating filling member 85 thus obtained from the photosensitive resin layer. Note that the thickness of the interlayer insulating layer 80 on the first surface 101 and the second surface 102 of the substrate 100 is, for example, 10 μm to 100 μm, but may be thinner or thicker.

  The through electrode substrate 1 manufactured as described above has a conductive layer (first conductive adhesive layer 15, second conductive adhesive layer 25, seed layer 35, conductive layer) formed along the side wall of the through hole 90. 65), the first surface 101 side and the second surface 102 side of the substrate 100 can be electrically connected. Further, by filling the inside of the through hole 90 with the insulating resin as described above, the manufacturing process can be shortened compared to filling with a metal material by an electrolytic plating method, and voids are formed inside the through hole 90. Occurrence can also be suppressed.

  FIG. 14 is a schematic view showing a cross section of the substrate on which the wiring layer is formed in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. Using the through electrode substrate 1 manufactured as shown in FIG. 13, the wiring layers 121 and 122 may be formed as shown in FIG. A wiring layer is formed on the through electrode substrate 1 shown in FIG. 13, and the wiring layers 121 and 122 are obtained by patterning the wiring layer by photolithography. Such a wiring layer may be multilayered through an interlayer insulating film.

  The wiring layers 121 and 122 thus obtained (usually the outermost wiring layer in the case of multiple layers) are used as connection terminals when connecting to another through electrode substrate 1 or the like.

[Method of forming seed layer 30]
Here, a method for forming the seed layer 30 shown in FIGS. 7 and 8 will be described in detail. In the process of forming the seed layer 30, it is necessary to form a conductive layer inside a through hole having a high aspect ratio with an aspect ratio exceeding 5, so a film forming method with good film adhesion is required. is there. As a method with good film throwing power, for example, a method in which film growth occurs isotropically with respect to a growth surface such as an electroless plating method, a film formation source and a substrate having high anisotropy such as oblique deposition There can be mentioned a method of forming a film with good adhesion by positioning. Here, as an example, a film forming method by oblique deposition will be described in detail. Note that the oblique vapor deposition is vapor deposition that is set such that the vapor deposition material flying from the vapor deposition source reaches the surface of the substrate tilted with respect to the normal to the surface of the substrate to be formed.

  FIG. 18 is a schematic view of a film forming apparatus using oblique deposition in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. The film forming apparatus shown in FIG. 18 includes a vacuum chamber 150 that achieves a high vacuum for vapor deposition, a turbo molecular pump (TMP) 220, and a gate valve 222. The vacuum chamber 150 fixes the holder 141 and the holder 141 for fixing the substrate in a state including a line parallel to the flight direction of the vapor deposition material and the perpendicular line 130 of the substrate with an angle 132 formed by both the lines inclined at a constant angle. A rotation support column 140 that rotates the holder 141 while maintaining a constant angle 132, a crucible 210 that holds the evaporation source 212, and an electron gun 200 that generates an electron beam 201 that evaporates the evaporation source 212.

During vapor deposition, it is desirable to use TMP in a high vacuum state of, for example, 10 ⁻³ to 10 ⁻⁶ Pa in order to improve the straightness of the evaporated vapor deposition material 214. When vapor deposition is performed in such a high vacuum state, the probability of collision of vaporized vapor deposition material 214 with gas molecules in the chamber decreases, so that the change in the traveling direction due to scattering is reduced. As a result, since the vapor deposition material 214 reaches the substrate with very high straightness, sufficient coverage can be obtained even for through holes having a high aspect ratio such as an aspect ratio exceeding 5. . Further, by performing vapor deposition while rotating the rotary support column 140 with the holder 141 tilted, it is possible to form a film uniformly in the circumferential direction of the through hole.

  FIG. 19 is a schematic view showing a cross-sectional view of a through electrode substrate on which a conductive layer is formed by oblique vapor deposition in the through electrode substrate manufacturing method according to the first embodiment of the present invention. The vapor deposition material 214 evaporated by the electron beam 201 is incident on the substrate at a certain angle 132 with respect to the normal 130 of the substrate. The angle 132 may be determined by the aspect ratio of the through hole in which the vapor deposition film is to be formed. For example, at least the end 79 of the space where the first conductive adhesive layer 15 and the second conductive adhesive layer 25 are separated from each other. The angle may be set so as to reach. Preferably, for example, the angle may be set so as to reach the conductive layer end portion 29 inside the through hole formed on the opposite side of the surface to be deposited. Specifically, when oblique vapor deposition is performed on a through-hole having an aspect ratio of 5, an angle formed with a perpendicular to the first surface or the second surface of the substrate is 5 ° or more and 20 ° or less, so that the coating is performed. A deposited film can be formed with good performance.

Second Embodiment
In the first embodiment, only one layer of the first conductive adhesion layer 10 or the second conductive adhesion layer 20 is sandwiched between the insulating layer 70 on the side wall of the through hole and the seed layer 30. In the second embodiment, a structure in which a plurality of layers are sandwiched between the insulating layer 70 on the side wall of the through hole and the seed layer 30 will be described.

  FIG. 20 is a schematic view showing a cross section of a substrate on which a conductive layer is formed in the method for manufacturing a through electrode substrate according to the second embodiment of the present invention. The difference from FIG. 13 is that a third conductive adhesion layer 40 (third conductive adhesion layers 41, 42, 45) is formed between the first conductive adhesion layer 10 and the seed layer 30, The second conductive adhesive layer 50 (fourth conductive adhesive layers 51, 52, 55) is formed between the two conductive adhesive layers 20 and the seed layer 30.

  The third conductive adhesion layer 40 and the fourth conductive adhesion layer 50 may be made of a material having good adhesion to the seed layer 30, and preferably the same material as the seed layer 30. In this case, it can be considered that the third conductive adhesion layer 40 and the fourth conductive adhesion layer 50 also serve as part of the seed layer. Further, it is desirable that the third conductive adhesion layer 40 has good adhesion with the first conductive adhesion layer 10, and the fourth conductive adhesion layer 50 has good adhesion with the second conductive adhesion layer 20. In the second embodiment, since the third conductive adhesion layer 40 and the fourth conductive adhesion layer 50 are formed by sputtering, at the interface between the first conductive adhesion layer 10 and the third conductive adhesion layer 40, Good adhesion is obtained. Similarly, good adhesion can be obtained at the interface between the second conductive adhesion layer 20 and the fourth conductive adhesion layer 50. This is a mixing layer that is in contact with the interface between the first conductive adhesion layer 10 and the third conductive adhesion layer 40 and the interface between the second conductive adhesion layer 20 and the fourth conductive adhesion layer 50. It is thought that is formed. Further, when the third conductive adhesion layer 40, the fourth conductive adhesion layer 50, and the seed layer 30 are made of the same material, good adhesion can be obtained even at these interfaces.

<Third Embodiment>
In the third embodiment, a semiconductor device manufactured using the through electrode substrate 1 in the first or second embodiment will be described.

  FIG. 21 is a diagram showing a semiconductor device according to the third embodiment of the present invention. In the semiconductor device 1000, three through electrode substrates 300 (310, 320, 330) are stacked and connected to the LSI substrate 400. The through electrode substrate 310 is formed with a semiconductor element such as a DRAM, and includes connection terminals 511 and 512 formed of wiring layers 121 and 122, for example. One or more of these through electrode substrates 300 may be a through electrode substrate made of a substrate formed of glass, sapphire, or the like. The connection terminals 512 are connected to the connection terminals 500 of the LSI substrate 400 by bumps 610. The connection terminal 511 is connected to the connection terminal 522 of the through electrode substrate 320 by the bump 620. The connection terminals of the connection terminals 521 of the through electrode substrate 320 and the connection terminals 532 of the through electrode substrate 330 are also connected by the bumps 630. For the bump 600 (610, 620, 630), for example, a metal such as indium, copper, or gold is used.

  In addition, when laminating | stacking the penetration electrode board | substrate 1, not only three layers but two layers may be sufficient, and also four or more layers may be sufficient. In addition, the connection between the through-electrode substrate 1 and another substrate is not limited to using bumps, and other bonding techniques such as eutectic bonding may be used. Alternatively, polyimide, epoxy resin, or the like may be applied and baked to bond the through electrode substrate 1 and another substrate.

  FIG. 22 is a diagram showing another example of the semiconductor device according to the third embodiment of the present invention. In the semiconductor device 1000 shown in FIG. 22, semiconductor chips (LSI chips) 410 and 420 such as a MEMS device, a CPU, and a memory, and a through electrode substrate 300 are stacked and connected to the LSI substrate 400.

  The through electrode substrate 300 is disposed between the semiconductor chip 410 and the semiconductor chip 420 and connected by bumps 640 and 650. A semiconductor chip 410 is placed on the LSI substrate 400, and the LSI substrate 400 and the semiconductor chip 420 are connected by a wire 700. In this example, the through electrode substrate 300 is used as an interposer for stacking a plurality of semiconductor chips and three-dimensionally mounting them, and manufacturing a multifunctional semiconductor device by stacking a plurality of semiconductor chips having different functions. can do. For example, by using the semiconductor chip 410 as a 3-axis acceleration sensor and the semiconductor chip 420 as a 2-axis magnetic sensor, it is possible to manufacture a semiconductor device in which a 5-axis motion sensor is realized by one module.

  When the semiconductor chip is a sensor formed by a MEMS device, the sensing result may be output as an analog signal. In this case, a low-pass filter, an amplifier, and the like may also be formed on the semiconductor chip or the through electrode substrate 300.

  FIG. 23 is a diagram showing another example of the semiconductor device according to the third embodiment of the present invention. Although the above two examples (FIGS. 21 and 22) are three-dimensional mounting, this example is an example applied to the combined mounting of two dimensions and three dimensions. In the example shown in FIG. 23, six through electrode substrates 300 (310 to 360) are stacked and connected to the LSI substrate 400. However, all the through electrode substrates 300 are not only stacked and arranged, but are also arranged side by side in the in-plane direction of the substrate. One or more of these through electrode substrates 300 (310 to 360) may be a through electrode substrate made of a substrate formed of glass, sapphire, or the like.

  In the example of FIG. 23, the through electrode substrates 310 and 350 are connected to the LSI substrate 400, the through electrode substrates 320 and 340 are connected to the through electrode substrate 310, and the through electrode substrate 330 is connected to the through electrode substrate 320. The through electrode substrate 360 is connected to the through electrode substrate 350. In addition, even when the through electrode substrate 300 is used as an interposer for connecting a plurality of semiconductor chips as in the example shown in FIG. 22, such two-dimensional and three-dimensional mounting is possible. For example, the through electrode substrates 330, 340, 360, etc. may be replaced with semiconductor chips.

  The semiconductor device 1000 manufactured as described above includes various devices such as portable terminals (mobile phones, smartphones, notebook personal computers, etc.), information processing devices (desktop personal computers, servers, car navigations, etc.), home appliances, and the like. Installed in electrical equipment.

  EXAMPLES Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited only to these Examples.

  Example 1 will be described with reference to FIG. 20 of the second embodiment. First, a 400 μm thick silicon substrate was prepared as the substrate 100. Next, a resist pattern is formed on one surface (here, the first surface 101) of the silicon substrate by photolithography, and the silicon substrate is etched in the thickness direction by DRIE through the resist pattern to form a large number of through holes having a diameter of 50 μm. did. The aspect ratio of the through hole was 8.

  After the through hole was formed and the resist pattern was removed, a silicon oxide film was formed on the surface of the silicon substrate and the side wall of the through hole by thermal oxidation. Here, thermal oxidation was performed at 1050 ° C. in an oxygen atmosphere to form a 500 nm silicon oxide film.

Next, 100 nm of Ti having good adhesion to the silicon oxide film formed on the silicon substrate was formed as the first conductive adhesion layer 10 from the first surface 101 side of the silicon substrate by sputtering. Subsequently, 100 nm of Ti was formed as the second conductive adhesion layer 20 from the second surface 102 side of the silicon substrate by the sputtering method in the same manner as described above. Here, the sputtering method was performed by the DC magnetron sputtering method under the following conditions.
-Target-substrate distance = 100 mm
-Argon gas flow rate = 30 sccm
・ Chamber pressure = 0.5Pa
・ Power = 3kW
・ Film formation temperature = room temperature

Next, 100 nm of Cu was formed as the third conductive adhesion layer 40 by sputtering from the first surface 101 side of the silicon substrate. Subsequently, from the second surface 102 side of the silicon substrate, as the fourth conductive adhesion layer 50, Cu was deposited in a thickness of 100 nm by a sputtering method in the same manner as described above, thereby forming a sputter seed layer. Here, the sputtering method was performed by the DC magnetron sputtering method under the following conditions.
-Target-substrate distance = 100 mm
-Argon gas flow rate = 30 sccm
・ Chamber pressure = 0.3Pa
・ Power = 5kW
・ Film formation temperature = room temperature

Next, Cu was deposited as a seed layer 30 with a thickness of 800 nm on the Cu formed by sputtering from the first surface 101 side of the silicon substrate, thereby forming a vapor deposition seed layer. Furthermore, a Cu film having a thickness of 800 nm was similarly formed from the second surface 102 side of the silicon substrate by oblique vapor deposition. At this time, the tilt of the silicon substrate was adjusted so that the angle formed by the line parallel to the flight direction of the vapor deposition material and the perpendicular of the silicon substrate was 8 °. The vapor deposition method was performed under the following conditions.
・ Distance between deposition source and substrate = 100mm
・ Vacuum ultimate pressure = 5 × 10 ⁻⁴ Pa
・ An angle between a line parallel to the flight direction of the vapor deposition material and the perpendicular of the substrate = 8 °

  Next, a resist pattern for plating was formed on both sides of the silicon substrate so as to cover a region where formation of a conductive film should be avoided in electrolytic plating described later. And Cu was formed into a film with a thickness of 10 μm on the portion exposed from the resist pattern for plating by electrolytic plating to form a conductive film.

  Thereafter, after removing the plating resist pattern, unnecessary deposition seeds and sputter seed layers present on both sides of the silicon substrate were sequentially removed. Thereby, the through electrode substrate shown in FIG. 20 was obtained.

  When a conduction test was performed on the through electrode substrate obtained as described above, it was confirmed that conduction was appropriately ensured in a chip including 1024 through electrodes.

  As described above, according to Example 1, in the through electrode substrate having a through hole with a high aspect ratio, it is possible to obtain a through electrode substrate in which the conductive layer in the through hole has high adhesion.

1: through electrode substrate 10, 11, 15: first conductive adhesion layers 20, 22, 25, 29: second conductive adhesion layers 30, 31, 32, 35: seed layers 40, 41, 42, 45: first 3 conductive adhesive layers 50, 51, 52, 55: fourth conductive adhesive layers 60, 61, 62, 65: conductive layers 70, 71, 72, 85: insulating layer 79: end portions 80, 81, 82: interlayer Insulating layer 85: insulating filling member 88: second photosensitive resin layer 89: first photosensitive resin layer 90: through hole 100: substrate 101: first surface 102: second surface 110, 111, 112: opening Units 121 and 122: Wiring layer 130: Vertical line 132: Angle formed by the vertical line of the substrate and the deposition direction 140: Rotating support column 141: Holder 150: Vacuum chamber 200: Electron gun 201: Electron beam 210: Crucible 212: Deposition source 214 : Vapor deposition material 222: Gate bar 300, 310, 320, 330, 340, 350, 360: Through electrode substrate 400: LSI substrate 410, 420: Semiconductor chips 500, 511, 512, 521, 522, 531: Connection terminals 600, 610, 620, 630, 640, 650: Bump 700: Wire 1000: Semiconductor device

Claims (15)

A substrate having a through hole penetrating the first surface and the second surface;
A through electrode disposed along a side wall of the through hole;
Have
The through hole is continuously Ri diameter is smaller from the first surface and the second surface towards the interior of the substrate,
The through electrode has a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer,
The first conductive layer is disposed on a part of the side surface of the through hole on the first surface side,
The second conductive layer is disposed on a part of the side surface of the through hole on the second surface side,
The third conductive layer is disposed in contact with the first conductive layer, the second conductive layer, and a side wall of the through hole exposed from the first conductive layer and the second conductive layer,
It said fourth conductive layer, the through electrode substrate, characterized in Rukoto disposed in said third conductive layer.   The through electrode substrate according to claim 1, wherein the substrate is a glass substrate or a quartz substrate.   2. The through electrode substrate according to claim 1, wherein a cavity connected from the first surface side to the second surface side is provided inside the through electrode in the through hole.   2. The through electrode substrate according to claim 1, further comprising an insulating material arranged continuously from the first surface side to the second surface side inside the through electrode in the through hole. The adhesion between the first conductive layer and the second conductive layer and the substrate, and the adhesion between the first conductive layer, the second conductive layer and the third conductive layer are determined by the third conductive layer and the third conductive layer. The penetration electrode substrate according to claim 1 , wherein the penetration electrode substrate is stronger than adhesion to the substrate. The through electrode substrate according to claim 1 , further comprising a base insulating layer disposed between the substrate and the through electrode. The adhesion between the first conductive layer and the second conductive layer and the base insulating layer, and the adhesion between the first conductive layer, the second conductive layer and the third conductive layer are determined by the third conductive layer. The penetration electrode substrate according to claim 6 , wherein the penetration electrode substrate is stronger than adhesion between the substrate insulating layer and the base insulating layer. The through electrode substrate according to claim 1 , wherein the first conductive layer and the second conductive layer contain argon. Forming a through-hole that penetrates the first surface and the second surface of the substrate and continuously decreases from the first surface and the second surface toward the inside of the substrate;
A method of manufacturing a penetrations electrode substrate that form a through electrode along a side wall of the through hole,
The through electrode is
Forming a first conductive layer on a part of the side surface of the through hole on the first surface side by a sputtering method;
Forming a second conductive layer on a part of the side surface of the through hole on the second surface side by a sputtering method;
Forming a third conductive layer so as to contact the side wall of the through hole exposed from the first conductive layer, the second conductive layer, and the first conductive layer and the second conductive layer;
A method of manufacturing a through electrode substrate formed by forming a fourth conductive layer on the third conductive layer by a plating method . The method for manufacturing a through electrode substrate according to claim 9 , wherein the substrate is a glass substrate or a quartz substrate. 10. The through electrode substrate according to claim 9 , wherein the through electrode is formed so that a cavity is formed inside the through electrode in the through hole from the first surface side to the second surface side. Manufacturing method. The method for manufacturing a through electrode substrate according to claim 9 , further comprising: forming an insulating material continuous from the first surface side to the second surface side inside the through electrode. The method for manufacturing a through electrode substrate according to claim 9 , wherein the third conductive layer is formed by an oblique deposition method. The oblique deposition is in claim 13, characterized in that normal to the first surface or the second surface of the substrate is carried out in an inclined state 5 ° or 20 ° or less with respect to the flight direction of the vapor deposition material The manufacturing method of the penetration electrode substrate of description. Further forming a base insulating layer between the substrate and the through electrode,
The method for manufacturing a through electrode substrate according to claim 9 , wherein the first conductive layer and the second conductive layer are formed on the base insulating layer.

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