JP2019016733A - Through electrode substrate, method of manufacturing the same, and semiconductor device using through electrode substrate - Google Patents

Abstract

To provide a through electrode substrate capable of suppressing drop-off of a resin provided inside a conductive layer arranged on an inner wall where a through-hole of a substrate exists without clogging a one-side opening by a metal.SOLUTION: A through electrode substrate according to one embodiment comprises: a substrate that has a through-hole penetrating through a first surface and a second surface opposite to the first surface; a through electrode arranged on an inner wall where the through-hole of the substrate exists, and in which a thickness at both end parts is thicker than a thickness at the other portion; and a resin layer arranged inside the through electrode.SELECTED DRAWING: Figure 2

Description

  The present disclosure relates to a through electrode substrate, a method for manufacturing the through electrode substrate, and a semiconductor device using the through electrode substrate.

  In recent years, three-dimensional mounting technology in which semiconductor chips are stacked vertically has become indispensable for higher integration and higher functionality of LSI systems. In this technique, it is necessary to efficiently connect the upper and lower semiconductor chips. Therefore, there is a through electrode technique in which a through hole is provided in a semiconductor chip, a conductive layer is provided on the inner wall of the substrate having a through hole, the inside of the conductive layer is filled with resin, and both sides of the semiconductor chip are electrically connected. It is attracting attention (for example, Patent Document 1).

  However, in the technique disclosed in Patent Document 1, the inside of the conductive layer (through electrode) disposed on the inner wall with the through hole of the substrate is filled with resin, but the inside of the conductive layer filled with resin has a large volume, When the resin is cured and shrunk, there is a problem that the resin falls off if a gap is generated between the resin and the conductive layer provided on the inner wall having the through hole of the substrate.

  On the other hand, conventionally, in order to shorten the time required for manufacturing the through electrode, a technique of closing the opening on one side of the through electrode with metal and filling the resin from the opening on the opposite side has been disclosed (for example, Patent Document 2). According to the technique disclosed in Patent Document 2, by closing the opening on one side with metal, as a result, the filled resin does not fall out, and the problem of the technique disclosed in Patent Document 1 can be solved. It will be possible.

JP-A-11-26892 JP 2015-211077 A

  However, in the technique disclosed in Patent Document 2, since the opening on one side of the through electrode is closed with metal, in the configuration in which the organic insulating layer is provided immediately above the through electrode, the metal closing the opening And the organic insulating layer are in contact with each other, which causes a problem of low adhesion.

  In view of the above circumstances, the present disclosure provides a through electrode substrate that prevents the resin on the inner side of the conductive layer disposed on the inner wall having the through hole of the substrate from falling off without closing the opening on one side with metal. There is a place to do.

  According to an embodiment of the present disclosure, a substrate having a through hole that passes through a first surface and a second surface that is the surface opposite to the first surface, and an inner wall of the substrate having the through hole. A through-electrode substrate comprising: a through-electrode having a thickness at both end portions thicker than the thickness of other portions; and a resin layer disposed inside the through-electrode. The

  A first wiring layer disposed on the first surface and connected to the through electrode, and an insulating layer disposed on the upper side of the first wiring layer and in contact with the resin layer may be further provided.

  The insulating layer may be an organic insulating layer.

  The first maximum angle formed by the perpendicular of the first surface of the substrate and the tangent of the through electrode at the end on the first surface side, and the perpendicular of the second surface of the substrate and the second A second maximum angle formed by a tangent to the through electrode at the end on the surface side may be larger than 0 ° and smaller than 90 °.

  The second maximum angle may be larger than the first maximum angle.

  The resin layer may include a thermosetting resin or a photocurable resin.

  According to an embodiment of the present disclosure, a semiconductor device including the through electrode substrate, an LSI substrate connected to the through electrode of the substrate, and a semiconductor chip connected to the through electrode of the substrate. Provided.

  According to one embodiment of the present disclosure, a substrate having a first surface and a second surface that is the surface opposite to the first surface is formed with a through hole from the first surface side, On the inner wall of the substrate where the through hole is located, a through electrode having a thickness at both end portions larger than the thickness of the other part is formed, a resin is filled inside the through electrode, and the resin is cured to form a resin layer. A method of manufacturing a through electrode substrate is provided that includes forming.

  After forming the resin layer, a first wiring layer connected to the through electrode is formed on the first surface, and an insulating layer is formed so as to be in contact with the upper side of the first wiring layer and the resin layer. It may further include.

  The second maximum angle formed by the tangent line between the perpendicular of the second surface of the substrate and the penetrating electrode at the end on the second surface side is perpendicular to the first surface of the substrate and the first When it is formed to be larger than the first maximum angle formed by the tangent line to the through electrode at the end on the surface side, filling the resin inside the through electrode may cause the first electrode to enter the inside of the through electrode. The resin may be filled from the surface side.

  According to the present disclosure, it is possible to provide a through electrode substrate that prevents the resin inside the conductive layer disposed on the side surface having the through hole of the substrate from falling off without blocking the opening on one side with metal. it can.

It is a top view showing an outline of a penetration electrode substrate concerning one embodiment of this indication. FIG. 2 is a cross-sectional view taken along the line A-A ′ of the through electrode substrate in FIG. 1. It is sectional drawing to which B vicinity in FIG. 2 was expanded. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing explaining 1 process of the manufacturing method of the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing of the penetration electrode board | substrate which concerns on the modification of this indication. It is a sectional view showing a semiconductor device using a penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing which shows another example of the semiconductor device using the penetration electrode substrate concerning one embodiment of this indication. It is sectional drawing which shows another example of the semiconductor device using the penetration electrode substrate concerning one embodiment of this indication.

  Hereinafter, a through electrode substrate, a through electrode substrate manufacturing method, and a semiconductor device according to the present disclosure will be described with reference to the drawings. However, the through electrode substrate, the through electrode substrate manufacturing method, and the semiconductor device of the present disclosure can be implemented in many different modes, and should not be construed as being limited to the description of the following embodiments. Absent. Note that in the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted. In addition, for convenience of explanation, the description will be made using the terms “upper” or “lower”, but the vertical direction may be reversed.

<First Embodiment>
[Configuration of Through Electrode Substrate 10]
A through electrode substrate 10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 3. FIG. 1 is a plan view illustrating an outline of a through electrode substrate according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view of the through electrode substrate taken along the line AA ′ in FIG.

  As shown in FIG. 1, the through electrode substrate 10 is provided with a through hole 110 in the substrate 100. As shown in FIG. 2, the through electrode substrate 10 includes a substrate 100 and a through electrode 130. The substrate 100 has an upper surface (first surface) 102 and a lower surface (second surface) 104. The substrate 100 is provided with a through hole 110 that penetrates the upper surface 102 and the lower surface 104. There may be a plurality of through holes 110 and through electrodes 130.

  In this example, the substrate 100 is a glass substrate. In addition to a glass substrate, an insulating substrate such as a quartz substrate, a sapphire substrate, or a resin substrate, a semiconductor substrate such as a silicon substrate, a silicon carbide substrate, or a compound semiconductor substrate, or a conductive substrate such as a stainless steel substrate can be used. . Note that when a silicon substrate or a conductive substrate is used, the periphery of the substrate needs to be covered with an insulating layer. In this case, an insulating film is formed after forming the through hole 110 (see FIG. 8) and before forming the seed layer 162 (see FIG. 9). In addition, as a material used for the substrate, a material having a thermal expansion coefficient in a range of 2 × 10 −6 [/ K] to 17 × 10 −6 [/ K] can be used. Moreover, these may be laminated.

  The thickness of the substrate 100, that is, the distance between the upper surface 102 and the lower surface 104 is not particularly limited, but for example, a substrate having a thickness of 100 μm or more and 800 μm or less can be used. The thickness of the substrate 100 is more preferably 200 μm or more and 400 μm or less. When the substrate becomes thinner than the lower limit of the thickness t of the substrate, the deflection of the substrate increases. As a result, handling in the manufacturing process becomes difficult, and the substrate is warped by an internal stress such as a thin film formed on the substrate.

The through electrode 130 is disposed on the inner wall 112 where the through hole 110 of the substrate 100 is located. The through electrode 130 has a thickness at both end portions that is greater than the thickness at other portions excluding the both end portions. In other words, the through electrode 130 has a first protrusion 130a and a second protrusion 130b. The first protrusion 130 a and the second protrusion 130 b protrude partially from the other part of the through electrode 130. In other words, in the first protrusion 130a, the thickness t1 at _one end (first end) is the thickness at the other portion excluding the end and the other end (second end). thicker than the t _c. Similarly, the second protrusion 130b has a thickness t ₂ at the other end (second end) is greater than the thickness t _c of the other portions. Further, it can be said that the through electrode 130 protrudes on the inner wall 112 near the upper surface (first surface) 102 and protrudes on the inner wall 112 near the lower surface (second surface) 104.

  The through electrode 130 is disposed on the inner wall 112 having the through hole 110 of the substrate 100, and electrically connects the wiring layer (first wiring layer) 160 disposed on the upper surface 102 side and the wiring layer 170 disposed on the lower surface 104 side. Connect. In the through electrode substrate 10, the through electrode 130 has a seed layer 132 and a plating layer 134. Similar to the through electrode 130, the wiring layer 160 includes a seed layer 162 and a plating layer 164. The wiring layer 170 has a seed layer 172 and a plating layer 174. Here, the seed layer and the plating layer included in the first protrusion 130a of the through electrode 130 are referred to as “seed layer 132a” and “plating layer 134a”, respectively, and the second protrusion 130b of the through electrode 130 is described. The seed layer and the plating layer included in are respectively referred to as “seed layer 132b” and “plating layer 134b”.

  The seed layer 162 and the plating layer 164 are formed conformally. The seed layer 172 and the plating layer 174 are also formed conformally. Here, forming conformally means forming the layer so as to have the same shape as the layer to be covered. However, the seed layers 162 and 172 and the plating layers 164 and 174 are not limited to conformal shapes, and may have a function as a wiring layer even if there are irregularities.

  The seed layers 132, 162, and 172 can use a conductive material. For example, it is possible to use titanium (Ti), molybdenum (Mo), tungsten (W), tantalum (Ta), nickel (Ni), chromium (Cr), aluminum (Al), these compounds, or alloys thereof. it can. In particular, when the plating layers 134, 164, and 174 include copper (Cu), the seed layers 132, 162, and 172 can use a material that suppresses the diffusion of Cu, for example, titanium nitride (TiN), molybdenum nitride. (MoN), tantalum nitride (TaN), or the like may be used. Here, the thickness of the seed layers 132, 162, and 172 is not particularly limited, but can be appropriately selected within a range of 300 nm to 1200 nm, for example.

  The plating layers 134, 164, and 174 may be made of a conductive material that has good adhesion to the seed layers 132, 162, and 172, and high electrical conductivity. For example, a metal such as copper (Cu), gold (Au), silver (Ag), platinum (Pt), rhodium (Rh), tin (Sn), aluminum (Al), nickel (Ni), chromium (Cr) or the like It can select from the alloy etc. which used these.

  The resin layer 150 is disposed inside the through electrode 130. The material of the resin layer 150 is a thermosetting resin such as polyimide (PI) or an epoxy resin, or a photocurable resin such as an acrylic resin.

  Here, with reference to FIG. 3, both end portions of the through electrode 130 will be described from the relationship with the resin layer 150. Specifically, the first protrusion 130a of the through electrode 130 will be described as an example, but the same applies to the second protrusion 130b. FIG. 3 is an enlarged cross-sectional view of the vicinity of B in FIG.

As shown in FIG. 3, there is a gap 141 between the through electrode 130 and the resin layer 150. The first protrusion 130a of the through electrode 130 has a certain width. Therefore, there are many places where the angle formed by the tangent line between the perpendicular to the upper surface 102 of the substrate 100 and the first protrusion 130a is 0 ° or more. Of these many, the angle at which the angle formed by the tangent line between the perpendicular to the upper surface 102 of the substrate 100 and the first protrusion 130a is the maximum is referred to as “first maximum angle θ 1 — _max ”. When the angle formed between the perpendicular line to the upper surface 102 of the substrate 100 and the tangent line of the first protrusion 130a is 0 °, the through electrode 130 is formed on the inner wall of the substrate 100 with the through hole 110 in parallel in a cross-sectional view. Means that Similarly, the maximum angle formed by the perpendicular line of the lower surface 104 of the substrate 100 and the tangent line of the through electrode 130 at the end portion on the lower surface 104 side is referred to as “second maximum angle θ 2 — _max ” (not shown).

Here, z represents the amount of displacement of the resin due to shrinkage in length, and c represents the amount of resin shrinkage in length. c depends on the resin material, pore volume, curing conditions, and the like. The following formula is derived from FIG.

When the re-express the above formula in the first maximum angle theta ₁ _ _max, it is shown in the following equation.

First maximum angle theta _{1_Max} and second maximum angle theta _{2_Max} is preferably 0 less than greater than 90 ° °. When the first maximum angle theta _{1_Max} and second maximum angle theta _{2_Max} to 90 ° or more, the becomes difficult embedding resin. Further, for example, if c is 1 μm or less and the positional deviation z of the resin in the thickness direction that is practically acceptable is 6 μm, the first maximum angle θ _{1_max} and the second maximum angle θ _{2_max} are 10 ° or more. Is preferred.

  Returning again to FIG. The insulating layer 180 is disposed on the upper side of the wiring layer 160 and the upper side of the resin layer 150. The insulating layer 180 is also disposed on the lower side of the wiring layer 170 and the lower side of the resin layer 150 when viewed on the paper. The insulating layer 180 is in contact with the resin layer 150. In this example, the insulating layer 180 is an organic insulating layer. As organic insulating layers, polyimide, epoxy resin, polyimide resin, benzocyclobutene resin, polyamide, phenol resin, silicone resin, fluorine resin, liquid crystal polymer, polyamideimide, polybenzoxazole, cyanate resin, aramid, polyolefin, polyester, BT Resin, FR-4, FR-5, polyacetal, polybutylene terephthalate, syndiotactic polystyrene, polyphenylene sulfide, polyether ether ketone, polyether nitrile, polycarbonate, polyphenylene ether polysulfone, polyether sulfone, polyarylate, polyetherimide Etc. can be used. Further, an inorganic filler such as glass, talc, mica, silica, alumina or the like may be used in combination with the above resin.

  Note that a wiring layer and an insulating layer (not shown) may be further laminated on the upper and lower sides of the insulating layer 180 when viewed in the paper to form a multilayer wiring board.

  According to the present disclosure, the thickness at both end portions of the through electrode 130 is thicker than the thickness of other portions. Therefore, it is possible to prevent the resin layer 150 inside the through electrode 130 disposed on the inner wall 112 having the through hole 110 of the substrate 100 from falling off without closing the opening on one side with metal. The resin layer 150 is in contact with the insulating layer 180. When the insulating layer 180 is an organic insulating layer, the opening on one side is not blocked with metal as in the conventional technique (the technique disclosed in Patent Document 2). Adhesion increases. The through electrode substrate 10 has been described above.

[Method for Manufacturing Penetration Electrode Substrate 10]
A method for manufacturing the through electrode substrate 10 will be described with reference to FIGS. 4 to 16 are cross-sectional views illustrating one process of the method for manufacturing the through electrode substrate according to the embodiment of the present disclosure. 4 to 16, the same elements as those shown in FIG. 2 are denoted by the same reference numerals.

  First, as shown in FIG. 4, a substrate 100 is prepared. In this example, the substrate 100 is a glass substrate. Next, as shown in FIG. 5, the substrate 100 is irradiated with a femtosecond laser, so that the material of the substrate in the region where the through hole is to be formed is altered. Here, the laser beam 601 emitted from the light source 600 is incident from the upper surface 102 side of the substrate 100 and is focused on a region where a through hole inside the substrate 100 is to be formed. At the position where the laser beam 601 is focused, high energy is supplied to the substrate 100, and the material of the substrate is altered.

  As shown in FIG. 6, the altered region is formed inside the substrate 100 by the laser irradiation described above. Here, the altered region 109 can be appropriately changed in shape according to the desired shape of the through hole. Here, since the region of the altered region 109 becomes the subsequent through hole 110, the altered region may be adjusted in accordance with the desired size of the through hole 110.

  Next, as shown in FIG. 7, the altered region 109 of the substrate 100 is etched using a chemical solution 611. The altered region 109 has a higher etching rate due to the chemical solution than an unmodified region. That is, when the entire substrate 100 is immersed in the chemical solution 611, the altered region 109 is etched at a higher rate than a selectively or unaltered region. FIG. 7 shows a method of performing etching from both the upper surface 102 and the lower surface 104 by immersing the substrate 100 in a chemical solution 611 placed in a container 610. Here, if the substrate 100 is a glass substrate, hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), surfactant-added buffered hydrofluoric acid, or the like can be used as the chemical solution 611 used for etching. The chemical solution used for etching can be appropriately selected depending on the material of the substrate. Further, the etching method may be a spin coat etching method in addition to the immersion method. When performing spin coat etching, the treatment is performed on each side.

  Next, as shown in FIG. 8, the through hole 110 is formed by removing the altered region 109 by etching using the chemical solution 611. Here, there is no restriction | limiting in particular in the shape in planar view of the through-hole 110, For example, a circle may be sufficient and a rectangle and a polygon other than that may be sufficient. Of course, it may be a rectangle or a polygon with rounded corners.

In the above, the method of forming a through hole by irradiating a laser beam to a region where a through hole is to be formed in the substrate 100 to form an altered region and performing wet etching with a chemical solution has been described with reference to FIGS. However, it is not limited to this method. For example, the through hole may be formed by irradiating the substrate 100 with a high-power laser and melting the substrate. For example, a CO ₂ laser or the like can be used as a laser for processing a glass substrate.

  Subsequently, as shown in FIG. 9, a seed layer 162 is formed on the upper surface 102 of the substrate 100 and a seed layer 132 is formed on the side surface 112 of the substrate 100 from the upper surface 102 side of the substrate 100. Similarly, as shown in FIG. 10, a seed layer 172 is formed on the lower surface 104 of the substrate 100 and a seed layer 132 b is formed on the side surface 112 of the substrate 100 from the lower surface 104 side of the substrate 100. Here, it is necessary to adjust the conditions such as the time for forming the seed layer 132 at both ends so that the thickness at the both ends of the seed layer 132 is larger than the thickness of the other portions.

  Next, as shown in FIG. 11, first, after applying a photoresist on the seed layers 162 and 172, a resist pattern 630 is formed by performing exposure and development. The resist pattern 630 is formed so as to expose at least the through hole 110. Next, electroplating is performed by energizing the seed layers 132, 162, and 172 to form plated layers 134, 164, and 174 on the seed layers 132, 162, and 172 exposed from the resist pattern 630, respectively. When the through electrode 130 is formed in this manner, the maximum angle (first maximum angle) formed by the tangent line between the perpendicular of the upper surface 102 of the substrate 100 and the through electrode 130 at the end on the upper surface 100 side is formed to be 10 ° or more. To do. Similarly, the maximum angle (second maximum angle) formed by the tangent line between the perpendicular line of the lower surface 104 of the substrate 100 and the through electrode 130 at the end portion on the lower surface 104 side is formed to be 10 ° or more.

  Next, as shown in FIG. 12, the resist pattern 630 is removed. That is, after forming the plating layers 134, 164 and 174, the photoresist constituting the resist pattern 630 is removed with an organic solvent. Note that ashing by oxygen plasma can be used for removing the photoresist instead of using an organic solvent.

  Next, as shown in FIG. 13, the seed layer exposed from the plating layer is etched. That is, the seed layers 162 and 172 in the region covered with the resist pattern 630 where the plating layers 164 and 174 are not formed are removed.

  Next, as shown in FIG. 14, the resin is filled into the through electrode 130 in the through hole 110 from the upper surface 102 side. In this example, the resin is polyimide. At the time when the resin is filled, the resin has fluidity. Therefore, the resin layer 150 is then formed by curing the resin. In this example, since the resin is polyimide which is a thermosetting resin, the resin is cured by baking at a temperature of 200 ° C. to 300 ° C. Since the resin shrinks when fired, a gap 141 is formed between the through electrode 130 and the first resin, as shown in FIG. Since FIG. 15 is a conceptual diagram, the first resin layer 140 appears to float as a result of the formation of the gap 141. However, in reality, the first resin layer 140 has a fine uneven shape. A part of one resin layer 140 is in contact with the through electrode 130.

  Next, as shown in FIG. 16, an insulating layer 180 is formed on the upper side of the wiring layer 160 and on the upper side of the resin layer 150. Similarly, the insulating layer 180 is also formed on the lower side of the wiring layer 170 and the lower side of the resin layer 150 when viewed on the paper. The insulating layer 180 is formed in contact with the resin layer 150. Note that a wiring layer and an insulating layer (not shown) may be further laminated on the upper and lower sides of the insulating layer 180 when viewed in the paper to form a multilayer wiring board.

  According to the present disclosure, the through electrode 130 having a thickness at both end portions larger than that of the other portion is formed. Therefore, even if the resin is filled inside the through electrode 130 after the through electrode 130 is formed and the resin layer 150 is formed by curing and shrinking the resin, the resin layer 150 is prevented from falling out of the through hole 110. It becomes possible to do. The manufacturing method of the through electrode substrate 10 has been described above.

<Modification>
In the above embodiment, the maximum angle (first maximum angle) formed by the perpendicular line of the upper surface 102 of the substrate 100 and the tangent line between the through electrode 130 at the end on the upper surface 100 side, the perpendicular line of the lower surface 104 of the substrate 100, and the lower surface 104. Although it has been described that the maximum angle (second maximum angle) formed by the tangent to the through electrode 130 at the end on the side is 10 ° or more, the magnitude relationship between the two is not described. FIG. 17 is a cross-sectional view of a through electrode substrate according to a modified example of the present disclosure. The through electrode substrate 20 is substantially the same as the through electrode substrate 10 according to the first embodiment. Therefore, different points will be described in detail, and detailed description of overlapping points will be omitted.

As shown in FIG. 17, the through electrode substrate 20, toward the second maximum angle theta _{2_Max} may be greater than the first maximum angle _θ 1_max. This modification also has the same effect as the first embodiment.

In producing the through electrode substrate 20, toward the second maximum angle theta _{2_Max} is, to be greater than the first maximum angle theta _{1_Max,} in the case of using sputtering, adjusting a sputtering conditions (time, etc.) There is a need to. In addition, when the resin is filled inside the through electrode 230 and cured, the resin layer 150 after curing is more prevented from falling out of the through hole 110 when the lower surface 104 is lower as in the paper surface. Therefore, it is preferable.

Second Embodiment
A semiconductor device using a through electrode substrate according to an embodiment of the present disclosure will be described with reference to FIGS. FIG. 18 is a cross-sectional view illustrating a semiconductor device using a through electrode substrate according to an embodiment or a modification of the present disclosure. In the semiconductor device 1000, three through electrode substrates 1310, 1320, and 1330 are stacked and connected to an LSI substrate 1400 on which a semiconductor element such as a DRAM is formed, for example. The through electrode substrate 1310 has connection terminals 1511 and 1512. These through electrode substrates 1310, 1320, and 1330 may be through electrode substrates formed from substrates of different materials. The connection terminal 1512 is connected to the connection terminal 1500 of the LSI substrate 1400 by the bump 1610. The connection terminal 1511 is connected to the connection terminal 1522 of the through electrode substrate 1320 by the bump 1620. The connection terminals 1521 of the through electrode substrate 1320 and the connection terminals 1532 of the through electrode substrate 1330 are also connected by the bumps 1630. For the bumps 1610, 1620, and 1630, for example, a metal such as indium, copper, or gold is used.

  In addition, when laminating | stacking a through-electrode board | substrate, not only three layers but two layers may be sufficient, and also four or more layers may be sufficient. Further, the connection between the through-electrode substrate and another substrate is not limited to using bumps, and other bonding techniques such as eutectic bonding may be used. Alternatively, polyimide, epoxy resin, or the like may be applied and baked to bond the through electrode substrate and another substrate.

  FIG. 19 is a cross-sectional view illustrating another example of a semiconductor device using a through electrode substrate according to an embodiment of the present disclosure. A semiconductor device 1000 illustrated in FIG. 19 includes semiconductor chips (LSI chips) 1410 and 1420 such as a MEMS device, a CPU, and a memory, and a through electrode substrate 1300 that are stacked and connected to the LSI substrate 1400.

  A through electrode substrate 1300 is disposed between the semiconductor chip 1410 and the semiconductor chip 1420 and connected by bumps 1640 and 1650. A semiconductor chip 1410 is placed on the LSI substrate 1400, and the LSI substrate 1400 and the semiconductor chip 1420 are connected by a wire 1700. In this example, the through electrode substrate 1300 can manufacture a multi-functional semiconductor device by stacking a plurality of semiconductor chips having different functions. For example, by using the semiconductor chip 1410 as a three-axis acceleration sensor and the semiconductor chip 1420 as a two-axis magnetic sensor, a semiconductor device in which a five-axis motion sensor is realized by one module can be manufactured.

  When the semiconductor chip is a sensor formed by a MEMS device, the sensing result may be output as an analog signal. In this case, a low-pass filter, an amplifier, and the like may also be formed on the semiconductor chip or the through electrode substrate 1300.

  FIG. 20 is a cross-sectional view illustrating still another example of the semiconductor device using the through electrode substrate according to the embodiment of the present disclosure. The above two examples (FIGS. 18 and 19) are three-dimensional implementations, but in this example, they are examples applied to a combination of two-dimensional and three-dimensional implementations (sometimes referred to as 2.5 dimensions). . In the example shown in FIG. 20, six through electrode substrates 1310, 1320, 1330, 1340, 1350, and 1360 are stacked and connected to the LSI substrate 1400. However, all the through electrode substrates are not only laminated and arranged, but are also arranged side by side in the in-plane direction of the substrate. These through electrode substrates may be through electrode substrates formed from substrates of different materials.

  In the example of FIG. 20, the through electrode substrates 1310 and 1350 are connected to the LSI substrate 1400, the through electrode substrates 1320 and 1340 are connected to the through electrode substrate 1310, and the through electrode substrate 1330 is connected to the through electrode substrate 1320. The through electrode substrate 1360 is connected to the through electrode substrate 1350. Note that, as in the example shown in FIG. 20, even when the through electrode substrate 1300 is used as an interposer for connecting a plurality of semiconductor chips, such two-dimensional and three-dimensional mounting is possible. For example, the through electrode substrates 1330, 1340, 1360 and the like may be replaced with semiconductor chips.

  The semiconductor device 1000 manufactured as described above includes various devices such as portable terminals (mobile phones, smartphones, notebook personal computers, etc.), information processing devices (desktop personal computers, servers, car navigations, etc.), home appliances, and the like. Installed in electrical equipment.

  Note that the present disclosure is not limited to the above-described embodiment, and can be changed as appropriate without departing from the spirit of the present disclosure.

10, 20: Through electrode substrate 100: Substrate 110: Through hole 102: Upper surface 104: Lower surface 130, 230: Through electrode 130a: First protrusion 130b: Second protrusion 141: Gap 150: Resin layer 180: Insulation layer

Claims (10)

A substrate having a through-hole penetrating a first surface and a second surface that is opposite to the first surface;
A through electrode disposed on an inner wall with the through hole of the substrate, the through electrode having a thickness at both ends thicker than the thickness of the other part;
A resin layer disposed inside the through electrode;
A through electrode substrate. A first wiring layer disposed on the first surface and connected to the through electrode;
An insulating layer disposed on the first wiring layer and in contact with the resin layer;
The through electrode substrate according to claim 1, further comprising:   The through electrode substrate according to claim 2, wherein the insulating layer is an organic insulating layer.   The first maximum angle formed by the perpendicular of the first surface of the substrate and the tangent of the through electrode at the end on the first surface side, and the perpendicular of the second surface of the substrate and the second 2. The through electrode substrate according to claim 1, wherein a second maximum angle formed by a tangent to the through electrode at the end on the surface side is greater than 0 ° and less than 90 °.   The through electrode substrate according to claim 4, wherein the second maximum angle is larger than the first maximum angle.   The through electrode substrate according to claim 1, wherein the resin layer includes a thermosetting resin or a photocurable resin. The through electrode substrate according to any one of claims 1 to 6,
An LSI substrate connected to the through electrode of the substrate;
A semiconductor chip connected to the through electrode of the substrate;
A semiconductor device. A through-hole is formed from the first surface side in a substrate having a first surface and a second surface opposite to the first surface,
On the inner wall with the through hole of the substrate, a through electrode having a thickness at both end portions thicker than the thickness of the other part is formed,
Filling the inside of the through electrode with resin,
A method for producing a through electrode substrate, comprising: curing the resin to form a resin layer. After forming the resin layer, forming a first wiring layer connected to the through electrode on the first surface,
The method of manufacturing a through electrode substrate according to claim 8, further comprising forming an insulating layer so as to contact the upper side of the first wiring layer and the resin layer. The second maximum angle formed by the tangent line between the perpendicular of the second surface of the substrate and the penetrating electrode at the end on the second surface side is perpendicular to the first surface of the substrate and the first When forming larger than the first maximum angle formed by the tangent to the through electrode at the end on the surface side,
9. The method of manufacturing a through electrode substrate according to claim 8, wherein filling the inside of the through electrode with resin is filling the inside of the through electrode with resin from the first surface side. .

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