JP6359351B2 - 平面視試料の調製 - Google Patents

平面視試料の調製 Download PDF

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Publication number
JP6359351B2
JP6359351B2 JP2014122959A JP2014122959A JP6359351B2 JP 6359351 B2 JP6359351 B2 JP 6359351B2 JP 2014122959 A JP2014122959 A JP 2014122959A JP 2014122959 A JP2014122959 A JP 2014122959A JP 6359351 B2 JP6359351 B2 JP 6359351B2
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JP
Japan
Prior art keywords
sample
workpiece
ion beam
probe
flake
Prior art date
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Application number
JP2014122959A
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English (en)
Japanese (ja)
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JP2015038469A (ja
JP2015038469A5 (enExample
Inventor
リチャード・ジェイ・ヤング
Original Assignee
エフ・イ−・アイ・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JP2015038469A publication Critical patent/JP2015038469A/ja
Publication of JP2015038469A5 publication Critical patent/JP2015038469A5/ja
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Publication of JP6359351B2 publication Critical patent/JP6359351B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2014122959A 2013-06-28 2014-06-16 平面視試料の調製 Active JP6359351B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/930,911 2013-06-28
US13/930,911 US9040908B2 (en) 2013-06-28 2013-06-28 Plan view sample preparation

Publications (3)

Publication Number Publication Date
JP2015038469A JP2015038469A (ja) 2015-02-26
JP2015038469A5 JP2015038469A5 (enExample) 2017-07-13
JP6359351B2 true JP6359351B2 (ja) 2018-07-18

Family

ID=50979660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014122959A Active JP6359351B2 (ja) 2013-06-28 2014-06-16 平面視試料の調製

Country Status (4)

Country Link
US (2) US9040908B2 (enExample)
EP (1) EP2818844A1 (enExample)
JP (1) JP6359351B2 (enExample)
CN (1) CN104251795B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9040908B2 (en) 2013-06-28 2015-05-26 Fei Company Plan view sample preparation
CN105158516B (zh) * 2015-08-20 2018-10-16 上海华力微电子有限公司 一种集成电路分析中透射电镜平面样品的制备方法
US10546719B2 (en) * 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
US10801926B2 (en) * 2017-07-17 2020-10-13 Expresslo Llc Probe with solid beveled tip and method for using same for specimen extraction
DE102018108974B3 (de) 2018-04-16 2019-05-09 Carl Zeiss Microscopy Gmbh Verfahren zum Herstellen einer TEM-Probe
CN109374663B (zh) * 2018-12-29 2021-05-04 中国工程物理研究院材料研究所 一种柔性高原子序数材料透射电镜样品的制备方法
US12374520B2 (en) * 2020-05-01 2025-07-29 Hitachi High-Tech Corporation Tweezers, conveyance device, and method for conveying sample piece
CN115148568A (zh) * 2021-03-30 2022-10-04 台湾积体电路制造股份有限公司 样品载台及修饰样品的系统及方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435755Y2 (enExample) * 1975-11-29 1979-10-30
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
WO1999005506A1 (fr) * 1997-07-22 1999-02-04 Hitachi, Ltd. Procede et dispositif de preparation d'echantillons
NL1022426C2 (nl) 2003-01-17 2004-07-26 Fei Co Werkwijze voor het vervaardigen en transmissief bestralen van een preparaat alsmede deeltjes optisch systeem.
US20060085978A1 (en) 2004-10-21 2006-04-27 Milidantri Thomas H Jr Turbine component fixture for manufacture or repair
WO2007082380A1 (en) 2006-01-19 2007-07-26 Fibics Incorporated Redeposition technique for membrane attachment
US7423263B2 (en) * 2006-06-23 2008-09-09 Fei Company Planar view sample preparation
US7615745B2 (en) 2006-07-10 2009-11-10 Fei Company Method for separating a minute sample from a work piece
EP2095134B1 (en) * 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
JP5959139B2 (ja) * 2006-10-20 2016-08-02 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを分析する方法
JP2009216534A (ja) * 2008-03-11 2009-09-24 Jeol Ltd 薄膜試料作製方法
US9040908B2 (en) 2013-06-28 2015-05-26 Fei Company Plan view sample preparation

Also Published As

Publication number Publication date
US9368325B2 (en) 2016-06-14
US20150001176A1 (en) 2015-01-01
EP2818844A1 (en) 2014-12-31
US20150325409A1 (en) 2015-11-12
CN104251795B (zh) 2019-04-16
JP2015038469A (ja) 2015-02-26
US9040908B2 (en) 2015-05-26
CN104251795A (zh) 2014-12-31

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