JP6350810B2 - 圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置及び超音波測定装置 - Google Patents
圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置及び超音波測定装置 Download PDFInfo
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- JP6350810B2 JP6350810B2 JP2014117103A JP2014117103A JP6350810B2 JP 6350810 B2 JP6350810 B2 JP 6350810B2 JP 2014117103 A JP2014117103 A JP 2014117103A JP 2014117103 A JP2014117103 A JP 2014117103A JP 6350810 B2 JP6350810 B2 JP 6350810B2
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- piezoelectric
- electrode
- piezoelectric element
- liquid ejecting
- layer
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
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- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
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- B41J2/1629—Manufacturing processes etching wet etching
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/1632—Manufacturing processes machining
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
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- B41J2/164—Manufacturing processes thin film formation
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Description
xBi(Fe,Mn)O 3 −yBaTiO 3 −z(Bi,K)TiO 3 ・・・(1)
(0.35≦x<0.55、0.20≦y≦0.35、0.20<z≦0.40)
かかる態様によれば、菱面体晶構造を有する複合酸化物と、正方晶構造を有する複合酸化物と、によって圧電材料の成分を制御して、リーク電流の低減を図ることができ、繰り返しの電圧印加に対する耐久性の向上をも図ることができる。しかも、圧電材料の成分が好適な範囲とされる。よって、信頼性の向上を図ることができる。その上、鉛の含有量を抑えて環境への負荷も低減できる。
上記の課題を解決する本発明の他の態様は、基板に、第1電極と、上記に記載の圧電材料からなる圧電体層と、第2電極と、が積層されてなることを特徴とする圧電素子にある。かかる態様によれば、リーク電流の低減を図ることができ、繰り返しの電圧印加に対する耐久性の向上をも図ることができるため、信頼性の向上を図ることができる。その上、鉛の含有量を抑えて環境への負荷も低減できる。
上記の課題を解決する本発明の更に他の態様は、上記に記載の圧電素子を具備することを特徴とする液体噴射ヘッドにある。かかる態様によれば、リーク電流の低減を図ることができ、繰り返しの電圧印加に対する耐久性の向上をも図ることができるため、信頼性の向上を図ることができ、優れた噴射特性を長期に亘って維持できる液体噴射ヘッドとなる。その上、鉛の含有量を抑えて環境への負荷も低減できる。
上記の課題を解決する本発明の更に他の態様は、上記に記載の液体噴射ヘッドを具備することを特徴とする液体噴射装置にある。かかる態様によれば、リーク電流の低減を図ることができ、繰り返しの電圧印加に対する耐久性の向上をも図ることができるため、信頼性の向上を図ることができ、優れた噴射特性を長期に亘って維持できる液体噴射装置となる。その上、鉛の含有量を抑えて環境への負荷も低減できる。
上記の課題を解決する本発明の更に他の態様は、上記に記載の圧電素子と、前記圧電素子により発信される超音波、及び前記圧電素子により受信される超音波の少なくとも一方に基づく信号を利用して対象物を測定する制御手段と、を具備することを特徴とする超音波測定装置にある。かかる態様によれば、リーク電流の低減を図ることができ、繰り返しの電圧印加に対する耐久性の向上をも図ることができるため、信頼性の向上を図ることができ、優れた超音波送受信特性を長期に亘って維持できる超音波測定装置となる。その上、鉛の含有量を抑えて環境への負荷も低減できる。
また、他の態様は、ペロブスカイト構造を有していて菱面体晶構造を有する複合酸化物と、ペロブスカイト構造を有していて正方晶構造を有する複合酸化物と、を含む混晶として表され、前記菱面体晶構造を有する複合酸化物と前記正方晶構造を有する複合酸化物とのモル比(菱面体晶/正方晶)は、0.54以上1.20未満であることを特徴とする圧電材料にある。
かかる態様によれば、菱面体晶構造を有する複合酸化物と、正方晶構造を有する複合酸化物と、によって圧電材料の成分を制御して、リーク電流の低減を図ることができ、繰り返しの電圧印加に対する耐久性の向上をも図ることができる。よって、信頼性の向上を図ることができる。その上、鉛の含有量を抑えて環境への負荷も低減できる。
図1は、本発明の実施形態1に係る液体噴射装置の一例であるインクジェット式記録装置である。
(0.35≦x<0.55、0.20≦y≦0.35、0.20<z≦0.40)
<電極付き基板の作製>
シリコン基板を酸化して表面に二酸化シリコン膜からなる弾性膜51を形成し、次に、弾性膜51上にZrをスパッタしてそれを酸化炉にて酸化処理を施すことにより、酸化ジルコニウムからなる絶縁体膜52を形成した。そして、絶縁体膜52にチタン膜を形成し、熱酸化することで酸化チタンからなる密着層56を形成した。次に、密着層56上にRFマグネトロンスパッター法により白金膜からなる第1電極60を形成し、これらによって第1電極付き基板を得た。
次いで、第1電極60にシード層65を作製した。その工程は以下のとおりである。まず、2−エチルヘキサン酸ビスマス及び2−エチルヘキサン酸マンガンのn−オクタン溶液を混合してシード層用前駆体溶液を調製した。その後、シード層用前駆体溶液をマイクロピペットに取り、スピンコーターにセットした基板に滴下した。基板を回転させてシード層前駆体膜を形成した後(シード層用前駆体溶液塗布工程)、ホットプレート上で、180℃で3分間乾燥させた(シード層乾燥工程)。次いで、350℃で3分間脱脂を行い(シード層脱脂工程)、アモルファス膜を形成させて、ランプアニール炉を用いて700℃で5分間焼成した(シード層焼成工程)。以上の工程により、マンガン酸ビスマス(BiMnO3)からなるシード層65を形成した。
次いで、シード層65に圧電体層70を作製した。その工程は以下のとおりである。まず、2−エチルヘキサン酸ビスマス、2−エチルヘキサン酸バリウム、2−エチルヘキサン酸鉄、2−エチルヘキサン酸マンガン、2−エチルヘキサン酸マグネシウム及び2−エチルヘキサン酸チタンの各n−オクタン溶液を、表1の組成となるように混合して圧電体層用前駆体溶液を調製した。基板を回転させてシード層65に圧電体膜74を形成した後(塗布工程)、ホットプレート上で、180℃で3分間乾燥させた(乾燥工程)。次いで、350℃で3分間脱脂を行い(脱脂工程)、ランプアニール炉を用いて750℃で5分間焼成した(焼成工程)。以降、同様に、塗布〜脱脂工程を2回繰り返した後、ランプアニール炉を用いて750℃で5分間焼成し、上記の工程を5回繰り返して、Bi(Fe,Mn)O3、BaTiO3及び(Bi,K)TiO3からなる圧電体層70を形成した。
作製した圧電体層70に、RFマグネトロンスパッター法によりイリジウム膜を形成して第2電極80とした。以上の工程により、実施例1の圧電素子300を得た。
実施例1とはBi、Fe、Mn、Ba、K、Tiの組成を表1のように異ならせた圧電材料を用いた以外は実施例1と同様の工程により、実施例2〜5の圧電素子を得た。
Kを含まない、つまりKの含有量が0である表1に記載の圧電材料を用いた以外は実施例1と同様の工程により、比較例1の圧電素子を得た。
xBi(Fe,Mn)O3−yBaTiO3−z(Bi,K)TiO3・・・(1)
<I−V特性>
実施例1〜5及び比較例1の圧電素子について、±100Vの電圧を印加して、電流(I)と電圧(V)との関係を評価した。測定は、ヒューレットパッカード社製「4140B」を用い、測定時の保持時間を2秒として大気下で行った。図8及び表1に測定結果を示す。実施例1〜5の圧電素子は、比較例1よりも電流密度(リーク電流)が小さい傾向を示すことが分かった。すなわち、実施例1〜5によれば、比較例1よりもリーク電流の低減を図ることができることが分かった。表1において確かめられているように、比較例1に対して、実施例1では1桁、実施例2及び4〜5は2桁、実施例3は3桁もリーク電流を低減できることが分かった。
実施例5及び比較例1の圧電素子について、繰り返し電圧印加に対する耐破壊性(耐久性)を評価した。周波数50kHzで0−45Vの矩形パルスを繰り返し印加したときの破壊確率の測定結果を図9に示す。実施例5の圧電素子は、比較例1よりも繰り返し電圧印加に対する耐破壊性に優れることが分かった。すなわち、実施例5及び比較例1ともに初期段階では極めて低い破壊確率を維持するが、比較例1では繰り返し印加につれて破壊確率の上昇が確認されたのに対し、実施例5では、初期段階のような極めて低い破壊確率を維持できることが確認された。
以上、本発明の一実施形態について説明したが、本発明は上述したものに限定されるものではない。例えば、流路形成基板10としてシリコン単結晶基板を例示したが、特にこれに限定されず、例えばSOI基板、ガラス等の材料を用いるようにしてもよい。
Claims (5)
- ペロブスカイト構造を有していて菱面体晶構造を有する複合酸化物と、ペロブスカイト構造を有していて正方晶構造を有する複合酸化物と、を含む混晶として表され、
前記菱面体晶構造を有する複合酸化物と前記正方晶構造を有する複合酸化物とのモル比(菱面体晶/正方晶)は、0.54以上1.20未満であり、
下記一般式(1)で表される組成を有する複合酸化物からなることを特徴とする圧電材料。
xBi(Fe,Mn)O 3 −yBaTiO 3 −z(Bi,K)TiO 3 ・・・(1)
(0.35≦x<0.55、0.20≦y≦0.35、0.20<z≦0.40) - 基板に、第1電極と、請求項1に記載の圧電材料からなる圧電体層と、第2電極と、が積層されてなることを特徴とする圧電素子。
- 請求項2に記載の圧電素子を具備することを特徴とする液体噴射ヘッド。
- 請求項3に記載の液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 請求項2に記載の圧電素子と、
前記圧電素子により発信される超音波、及び前記圧電素子により受信される超音波の少なくとも一方に基づく信号を利用して対象物を測定する制御手段と、を具備することを特徴とする超音波測定装置。
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