JP6348491B2 - セラミック緑色蛍光体と保護された赤色蛍光体層とを有するled - Google Patents
セラミック緑色蛍光体と保護された赤色蛍光体層とを有するled Download PDFInfo
- Publication number
- JP6348491B2 JP6348491B2 JP2015522216A JP2015522216A JP6348491B2 JP 6348491 B2 JP6348491 B2 JP 6348491B2 JP 2015522216 A JP2015522216 A JP 2015522216A JP 2015522216 A JP2015522216 A JP 2015522216A JP 6348491 B2 JP6348491 B2 JP 6348491B2
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- Prior art keywords
- light
- layer
- light emitting
- converter
- ceramic
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
Landscapes
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261673810P | 2012-07-20 | 2012-07-20 | |
| US61/673,810 | 2012-07-20 | ||
| PCT/IB2013/055752 WO2014013406A1 (en) | 2012-07-20 | 2013-07-12 | Led with ceramic green phosphor and protected red phosphor layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015522954A JP2015522954A (ja) | 2015-08-06 |
| JP2015522954A5 JP2015522954A5 (enExample) | 2017-10-12 |
| JP6348491B2 true JP6348491B2 (ja) | 2018-06-27 |
Family
ID=49226224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015522216A Active JP6348491B2 (ja) | 2012-07-20 | 2013-07-12 | セラミック緑色蛍光体と保護された赤色蛍光体層とを有するled |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9379293B2 (enExample) |
| EP (1) | EP2875532B1 (enExample) |
| JP (1) | JP6348491B2 (enExample) |
| KR (2) | KR102131747B1 (enExample) |
| CN (1) | CN104471730B (enExample) |
| WO (1) | WO2014013406A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102204220B1 (ko) * | 2012-11-07 | 2021-01-19 | 루미리즈 홀딩 비.브이. | 필터 및 보호층을 포함하는 발광 디바이스 |
| DE102014100771A1 (de) * | 2014-01-23 | 2015-07-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines keramischen Konversionselements und Licht emittierendes Bauelement |
| DE102014107472A1 (de) * | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Beleuchtungsvorrichtung |
| CN106575693B (zh) | 2014-06-19 | 2020-07-31 | 亮锐控股有限公司 | 具有小源尺寸的波长转换发光设备 |
| US20160023242A1 (en) * | 2014-07-28 | 2016-01-28 | Osram Sylvania Inc. | Method of making wavelength converters for solid state lighting applications |
| JP6940784B2 (ja) * | 2014-09-26 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| DE102014117448A1 (de) * | 2014-11-27 | 2016-06-02 | Osram Gmbh | Optoelektronischer Halbleiterchip, Verfahren zur Herstellung eines optoelektronischen Halbleiterchips, Konversionselement und Leuchtstoff für ein Konversionselement |
| DE102015102842A1 (de) | 2015-02-27 | 2016-09-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Leuchtstoffkompositkeramik sowie Verfahren zu deren Herstellung |
| FR3033939B1 (fr) * | 2015-03-20 | 2018-04-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diode electroluminescente |
| EP3709374B1 (en) * | 2015-05-29 | 2022-08-03 | Nichia Corporation | Light emitting device |
| JP6183486B2 (ja) * | 2015-05-29 | 2017-08-23 | 日亜化学工業株式会社 | 発光装置、被覆部材の製造方法及び発光装置の製造方法 |
| JP6217705B2 (ja) | 2015-07-28 | 2017-10-25 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| CN106486585A (zh) * | 2015-08-25 | 2017-03-08 | 比亚迪股份有限公司 | Led荧光膜、led组件、制备方法以及电子器件 |
| US9859477B2 (en) | 2016-01-15 | 2018-01-02 | Corning Incorporated | Method of forming light emitting diode with high-silica substrate |
| JP2017174908A (ja) * | 2016-03-22 | 2017-09-28 | 豊田合成株式会社 | 発光装置の製造方法 |
| KR102674066B1 (ko) | 2016-11-11 | 2024-06-13 | 삼성전자주식회사 | 발광 소자 패키지 |
| DE102016224090B4 (de) * | 2016-12-05 | 2024-03-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement, Modul mit mindestens zwei optoelektronischen Bauelementen und Verfahren zum Herstellen eines optoelektronischen Bauelements |
| DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
| CN110556464A (zh) * | 2018-06-01 | 2019-12-10 | 深圳市绎立锐光科技开发有限公司 | 发光二极管封装结构及封装方法 |
| JP6760350B2 (ja) * | 2018-10-25 | 2020-09-23 | 日亜化学工業株式会社 | 発光装置 |
| CN111640844B (zh) * | 2020-06-17 | 2021-11-30 | 鸿利智汇集团股份有限公司 | 一种复合荧光膜及led封装工艺 |
| US12199230B2 (en) | 2021-05-06 | 2025-01-14 | Samsung Electronics Co., Ltd. | Light emitting device package |
| US20230178690A1 (en) * | 2021-12-06 | 2023-06-08 | Lumileds Llc | Monolithic LED Array And Method Of Manufacturing Thereof |
| CN119968946A (zh) * | 2022-09-29 | 2025-05-09 | 艾迈斯-欧司朗国际有限责任公司 | 转换元件、用于制造转换元件的方法以及发光部件 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001291901A (ja) * | 2000-04-07 | 2001-10-19 | Yamada Shomei Kk | 照明器具及びその製造方法 |
| JP4292794B2 (ja) * | 2002-12-04 | 2009-07-08 | 日亜化学工業株式会社 | 発光装置、発光装置の製造方法および発光装置の色度調整方法 |
| US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
| US7344902B2 (en) | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
| US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
| US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
| US7682850B2 (en) * | 2006-03-17 | 2010-03-23 | Philips Lumileds Lighting Company, Llc | White LED for backlight with phosphor plates |
| JP2007266246A (ja) * | 2006-03-28 | 2007-10-11 | Mitsubishi Electric Corp | Ledモジュール |
| JP2008270144A (ja) * | 2007-03-22 | 2008-11-06 | Furukawa Electric Co Ltd:The | ライトボックス |
| JP2009054801A (ja) * | 2007-08-27 | 2009-03-12 | Sanyo Electric Co Ltd | 放熱部材及びそれを備えた発光モジュール |
| JP2009070869A (ja) * | 2007-09-11 | 2009-04-02 | Panasonic Corp | 半導体発光装置 |
| WO2009105581A1 (en) * | 2008-02-21 | 2009-08-27 | Nitto Denko Corporation | Light emitting device with translucent ceramic plate |
| JP5025625B2 (ja) * | 2008-03-25 | 2012-09-12 | 株式会社東芝 | 発光装置の製造方法 |
| KR101226777B1 (ko) | 2008-03-25 | 2013-01-25 | 가부시끼가이샤 도시바 | 발광 장치와, 그 제조 방법 및 장치 |
| EP2297278A1 (en) * | 2008-06-02 | 2011-03-23 | Panasonic Corporation | Semiconductor light emitting apparatus and light source apparatus using the same |
| US7973327B2 (en) * | 2008-09-02 | 2011-07-05 | Bridgelux, Inc. | Phosphor-converted LED |
| WO2010032179A1 (en) * | 2008-09-16 | 2010-03-25 | Koninklijke Philips Electronics N.V. | Polymeric wavelength converting elements |
| WO2010035206A1 (en) * | 2008-09-25 | 2010-04-01 | Koninklijke Philips Electronics N.V. | Coated light emitting device and method for coating thereof |
| JP2010100743A (ja) * | 2008-10-24 | 2010-05-06 | Mitsubishi Chemicals Corp | 蛍光体含有組成物の製造方法 |
| US20100181582A1 (en) * | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
| EP2412038B1 (en) * | 2009-03-19 | 2019-01-02 | Philips Lighting Holding B.V. | Illumination device with remote luminescent material |
| US8227276B2 (en) * | 2009-05-19 | 2012-07-24 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
| US8803171B2 (en) * | 2009-07-22 | 2014-08-12 | Koninklijke Philips N.V. | Reduced color over angle variation LEDs |
| US20110031516A1 (en) | 2009-08-07 | 2011-02-10 | Koninklijke Philips Electronics N.V. | Led with silicone layer and laminated remote phosphor layer |
| US20110049545A1 (en) * | 2009-09-02 | 2011-03-03 | Koninklijke Philips Electronics N.V. | Led package with phosphor plate and reflective substrate |
| WO2011028033A2 (ko) * | 2009-09-02 | 2011-03-10 | 엘지이노텍주식회사 | 형광체, 형광체 제조방법 및 백색 발광 소자 |
| US8203161B2 (en) * | 2009-11-23 | 2012-06-19 | Koninklijke Philips Electronics N.V. | Wavelength converted semiconductor light emitting device |
| US8324798B2 (en) * | 2010-03-19 | 2012-12-04 | Nitto Denko Corporation | Light emitting device using orange-red phosphor with co-dopants |
| TW201208143A (en) * | 2010-08-06 | 2012-02-16 | Semileds Optoelectronics Co | White LED device and manufacturing method thereof |
| JP5622494B2 (ja) * | 2010-09-09 | 2014-11-12 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
| JP5566263B2 (ja) * | 2010-11-08 | 2014-08-06 | 株式会社小糸製作所 | 発光モジュール |
| DE102010053362B4 (de) | 2010-12-03 | 2021-09-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement |
-
2013
- 2013-07-12 KR KR1020157004248A patent/KR102131747B1/ko active Active
- 2013-07-12 JP JP2015522216A patent/JP6348491B2/ja active Active
- 2013-07-12 US US14/414,719 patent/US9379293B2/en active Active
- 2013-07-12 WO PCT/IB2013/055752 patent/WO2014013406A1/en not_active Ceased
- 2013-07-12 CN CN201380038655.1A patent/CN104471730B/zh active Active
- 2013-07-12 EP EP13765788.8A patent/EP2875532B1/en active Active
- 2013-07-12 KR KR1020207019153A patent/KR20200085912A/ko not_active Withdrawn
-
2016
- 2016-06-01 US US15/170,442 patent/US10205067B2/en active Active
-
2019
- 2019-02-11 US US16/272,996 patent/US20190172983A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN104471730B (zh) | 2018-04-17 |
| EP2875532A1 (en) | 2015-05-27 |
| KR102131747B1 (ko) | 2020-07-09 |
| US20190172983A1 (en) | 2019-06-06 |
| CN104471730A (zh) | 2015-03-25 |
| KR20200085912A (ko) | 2020-07-15 |
| US20150188001A1 (en) | 2015-07-02 |
| JP2015522954A (ja) | 2015-08-06 |
| US9379293B2 (en) | 2016-06-28 |
| EP2875532B1 (en) | 2019-02-27 |
| KR20150038136A (ko) | 2015-04-08 |
| US20160276551A1 (en) | 2016-09-22 |
| US10205067B2 (en) | 2019-02-12 |
| WO2014013406A1 (en) | 2014-01-23 |
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