CN104471730B - 发光器件和创建发光器件的方法 - Google Patents

发光器件和创建发光器件的方法 Download PDF

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Publication number
CN104471730B
CN104471730B CN201380038655.1A CN201380038655A CN104471730B CN 104471730 B CN104471730 B CN 104471730B CN 201380038655 A CN201380038655 A CN 201380038655A CN 104471730 B CN104471730 B CN 104471730B
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China
Prior art keywords
light
wave length
layer
converter
ceramic
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CN201380038655.1A
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English (en)
Chinese (zh)
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CN104471730A (zh
Inventor
A.D.施里克
K.K.麦
G.巴辛
U.马肯斯
J.P.A.沃格斯
A.L.维杰斯
K.A.兹特维德
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Lumileds Holding BV
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Koninklijke Philips NV
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

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  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
CN201380038655.1A 2012-07-20 2013-07-12 发光器件和创建发光器件的方法 Active CN104471730B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261673810P 2012-07-20 2012-07-20
US61/673810 2012-07-20
PCT/IB2013/055752 WO2014013406A1 (en) 2012-07-20 2013-07-12 Led with ceramic green phosphor and protected red phosphor layer

Publications (2)

Publication Number Publication Date
CN104471730A CN104471730A (zh) 2015-03-25
CN104471730B true CN104471730B (zh) 2018-04-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380038655.1A Active CN104471730B (zh) 2012-07-20 2013-07-12 发光器件和创建发光器件的方法

Country Status (6)

Country Link
US (3) US9379293B2 (enExample)
EP (1) EP2875532B1 (enExample)
JP (1) JP6348491B2 (enExample)
KR (2) KR102131747B1 (enExample)
CN (1) CN104471730B (enExample)
WO (1) WO2014013406A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102204220B1 (ko) * 2012-11-07 2021-01-19 루미리즈 홀딩 비.브이. 필터 및 보호층을 포함하는 발광 디바이스
DE102014100771A1 (de) * 2014-01-23 2015-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines keramischen Konversionselements und Licht emittierendes Bauelement
DE102014107472A1 (de) * 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Beleuchtungsvorrichtung
CN106575693B (zh) 2014-06-19 2020-07-31 亮锐控股有限公司 具有小源尺寸的波长转换发光设备
US20160023242A1 (en) * 2014-07-28 2016-01-28 Osram Sylvania Inc. Method of making wavelength converters for solid state lighting applications
JP6940784B2 (ja) * 2014-09-26 2021-09-29 日亜化学工業株式会社 発光装置の製造方法
DE102014117448A1 (de) * 2014-11-27 2016-06-02 Osram Gmbh Optoelektronischer Halbleiterchip, Verfahren zur Herstellung eines optoelektronischen Halbleiterchips, Konversionselement und Leuchtstoff für ein Konversionselement
DE102015102842A1 (de) 2015-02-27 2016-09-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leuchtstoffkompositkeramik sowie Verfahren zu deren Herstellung
FR3033939B1 (fr) * 2015-03-20 2018-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente
EP3709374B1 (en) * 2015-05-29 2022-08-03 Nichia Corporation Light emitting device
JP6183486B2 (ja) * 2015-05-29 2017-08-23 日亜化学工業株式会社 発光装置、被覆部材の製造方法及び発光装置の製造方法
JP6217705B2 (ja) 2015-07-28 2017-10-25 日亜化学工業株式会社 発光装置及びその製造方法
CN106486585A (zh) * 2015-08-25 2017-03-08 比亚迪股份有限公司 Led荧光膜、led组件、制备方法以及电子器件
US9859477B2 (en) 2016-01-15 2018-01-02 Corning Incorporated Method of forming light emitting diode with high-silica substrate
JP2017174908A (ja) * 2016-03-22 2017-09-28 豊田合成株式会社 発光装置の製造方法
KR102674066B1 (ko) 2016-11-11 2024-06-13 삼성전자주식회사 발광 소자 패키지
DE102016224090B4 (de) * 2016-12-05 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Modul mit mindestens zwei optoelektronischen Bauelementen und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102017101729A1 (de) * 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
CN110556464A (zh) * 2018-06-01 2019-12-10 深圳市绎立锐光科技开发有限公司 发光二极管封装结构及封装方法
JP6760350B2 (ja) * 2018-10-25 2020-09-23 日亜化学工業株式会社 発光装置
CN111640844B (zh) * 2020-06-17 2021-11-30 鸿利智汇集团股份有限公司 一种复合荧光膜及led封装工艺
US12199230B2 (en) 2021-05-06 2025-01-14 Samsung Electronics Co., Ltd. Light emitting device package
US20230178690A1 (en) * 2021-12-06 2023-06-08 Lumileds Llc Monolithic LED Array And Method Of Manufacturing Thereof
CN119968946A (zh) * 2022-09-29 2025-05-09 艾迈斯-欧司朗国际有限责任公司 转换元件、用于制造转换元件的方法以及发光部件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101405646A (zh) * 2006-03-17 2009-04-08 飞利浦拉米尔德斯照明设备有限责任公司 用于背光的具有荧光体片的白光led
DE102010053362A1 (de) * 2010-12-03 2012-06-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291901A (ja) * 2000-04-07 2001-10-19 Yamada Shomei Kk 照明器具及びその製造方法
JP4292794B2 (ja) * 2002-12-04 2009-07-08 日亜化学工業株式会社 発光装置、発光装置の製造方法および発光装置の色度調整方法
US7256483B2 (en) 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US7344902B2 (en) 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP2007266246A (ja) * 2006-03-28 2007-10-11 Mitsubishi Electric Corp Ｌｅｄモジュール
JP2008270144A (ja) * 2007-03-22 2008-11-06 Furukawa Electric Co Ltd:The ライトボックス
JP2009054801A (ja) * 2007-08-27 2009-03-12 Sanyo Electric Co Ltd 放熱部材及びそれを備えた発光モジュール
JP2009070869A (ja) * 2007-09-11 2009-04-02 Panasonic Corp 半導体発光装置
WO2009105581A1 (en) * 2008-02-21 2009-08-27 Nitto Denko Corporation Light emitting device with translucent ceramic plate
JP5025625B2 (ja) * 2008-03-25 2012-09-12 株式会社東芝 発光装置の製造方法
KR101226777B1 (ko) 2008-03-25 2013-01-25 가부시끼가이샤 도시바 발광 장치와, 그 제조 방법 및 장치
EP2297278A1 (en) * 2008-06-02 2011-03-23 Panasonic Corporation Semiconductor light emitting apparatus and light source apparatus using the same
US7973327B2 (en) * 2008-09-02 2011-07-05 Bridgelux, Inc. Phosphor-converted LED
WO2010032179A1 (en) * 2008-09-16 2010-03-25 Koninklijke Philips Electronics N.V. Polymeric wavelength converting elements
WO2010035206A1 (en) * 2008-09-25 2010-04-01 Koninklijke Philips Electronics N.V. Coated light emitting device and method for coating thereof
JP2010100743A (ja) * 2008-10-24 2010-05-06 Mitsubishi Chemicals Corp 蛍光体含有組成物の製造方法
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
EP2412038B1 (en) * 2009-03-19 2019-01-02 Philips Lighting Holding B.V. Illumination device with remote luminescent material
US8227276B2 (en) * 2009-05-19 2012-07-24 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US8803171B2 (en) * 2009-07-22 2014-08-12 Koninklijke Philips N.V. Reduced color over angle variation LEDs
US20110031516A1 (en) 2009-08-07 2011-02-10 Koninklijke Philips Electronics N.V. Led with silicone layer and laminated remote phosphor layer
US20110049545A1 (en) * 2009-09-02 2011-03-03 Koninklijke Philips Electronics N.V. Led package with phosphor plate and reflective substrate
WO2011028033A2 (ko) * 2009-09-02 2011-03-10 엘지이노텍주식회사 형광체, 형광체 제조방법 및 백색 발광 소자
US8203161B2 (en) * 2009-11-23 2012-06-19 Koninklijke Philips Electronics N.V. Wavelength converted semiconductor light emitting device
US8324798B2 (en) * 2010-03-19 2012-12-04 Nitto Denko Corporation Light emitting device using orange-red phosphor with co-dopants
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
JP5622494B2 (ja) * 2010-09-09 2014-11-12 スタンレー電気株式会社 発光装置およびその製造方法
JP5566263B2 (ja) * 2010-11-08 2014-08-06 株式会社小糸製作所 発光モジュール

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101405646A (zh) * 2006-03-17 2009-04-08 飞利浦拉米尔德斯照明设备有限责任公司 用于背光的具有荧光体片的白光led
DE102010053362A1 (de) * 2010-12-03 2012-06-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement

Also Published As

Publication number Publication date
EP2875532A1 (en) 2015-05-27
KR102131747B1 (ko) 2020-07-09
US20190172983A1 (en) 2019-06-06
CN104471730A (zh) 2015-03-25
JP6348491B2 (ja) 2018-06-27
KR20200085912A (ko) 2020-07-15
US20150188001A1 (en) 2015-07-02
JP2015522954A (ja) 2015-08-06
US9379293B2 (en) 2016-06-28
EP2875532B1 (en) 2019-02-27
KR20150038136A (ko) 2015-04-08
US20160276551A1 (en) 2016-09-22
US10205067B2 (en) 2019-02-12
WO2014013406A1 (en) 2014-01-23

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Effective date of registration: 20180330

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Patentee after: LUMILEDS HOLDING B.V.

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Patentee before: Koninkl Philips Electronics NV