JP6347621B2 - 固体撮像素子及び撮像装置 - Google Patents

固体撮像素子及び撮像装置 Download PDF

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Publication number
JP6347621B2
JP6347621B2 JP2014025835A JP2014025835A JP6347621B2 JP 6347621 B2 JP6347621 B2 JP 6347621B2 JP 2014025835 A JP2014025835 A JP 2014025835A JP 2014025835 A JP2014025835 A JP 2014025835A JP 6347621 B2 JP6347621 B2 JP 6347621B2
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Japan
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photoelectric conversion
solid
conversion unit
imaging device
state imaging
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English (en)
Japanese (ja)
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JP2015152739A5 (enExample
JP2015152739A (ja
Inventor
愛彦 沼田
愛彦 沼田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014025835A priority Critical patent/JP6347621B2/ja
Priority to US14/618,798 priority patent/US9443891B2/en
Publication of JP2015152739A publication Critical patent/JP2015152739A/ja
Publication of JP2015152739A5 publication Critical patent/JP2015152739A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Optical Distance (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
JP2014025835A 2014-02-13 2014-02-13 固体撮像素子及び撮像装置 Expired - Fee Related JP6347621B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014025835A JP6347621B2 (ja) 2014-02-13 2014-02-13 固体撮像素子及び撮像装置
US14/618,798 US9443891B2 (en) 2014-02-13 2015-02-10 Solid-state image sensor and imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014025835A JP6347621B2 (ja) 2014-02-13 2014-02-13 固体撮像素子及び撮像装置

Publications (3)

Publication Number Publication Date
JP2015152739A JP2015152739A (ja) 2015-08-24
JP2015152739A5 JP2015152739A5 (enExample) 2017-03-16
JP6347621B2 true JP6347621B2 (ja) 2018-06-27

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JP2014025835A Expired - Fee Related JP6347621B2 (ja) 2014-02-13 2014-02-13 固体撮像素子及び撮像装置

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US (1) US9443891B2 (enExample)
JP (1) JP6347621B2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10132969B2 (en) 2010-04-15 2018-11-20 3M Innovative Properties Company Retroreflective articles including optically active areas and optically inactive areas
US10379271B2 (en) 2010-04-15 2019-08-13 3M Innovative Properties Company Retroreflective articles including optically active areas and optically inactive areas
US10859738B2 (en) 2010-04-15 2020-12-08 3M Innovative Properties Company Retroreflective articles including optically active areas and optically inactive areas
US11435616B2 (en) 2009-04-15 2022-09-06 3M Innovative Properties Company Optical construction and display system incorporating same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI504256B (zh) * 2008-04-07 2015-10-11 Sony Corp 固態成像裝置，其訊號處理方法，及電子設備
JP2016015431A (ja) * 2014-07-03 2016-01-28 ソニー株式会社 固体撮像素子、および電子装置
JP2017054966A (ja) * 2015-09-10 2017-03-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
EP3258493B1 (en) * 2016-06-16 2021-01-27 ams AG System-on-chip camera with integrated light sensor(s) and method of producing a system-on-chip camera
US10128284B2 (en) 2016-06-23 2018-11-13 Qualcomm Incorporated Multi diode aperture simulation
KR102577844B1 (ko) * 2016-08-09 2023-09-15 삼성전자주식회사 이미지 센서
US10204943B2 (en) 2016-08-10 2019-02-12 Canon Kabushiki Kaisha Image sensor, method of manufacturing the same, and camera with pixel including light waveguide and insulation film
JP6862129B2 (ja) * 2016-08-29 2021-04-21 キヤノン株式会社 光電変換装置および撮像システム
JP7061883B2 (ja) * 2018-01-22 2022-05-02 マクセル株式会社 画像表示装置および画像表示方法
JP2020113573A (ja) * 2019-01-08 2020-07-27 キヤノン株式会社 光電変換装置
KR102730016B1 (ko) * 2019-09-06 2024-11-14 에스케이하이닉스 주식회사 이미지 센싱 장치
CN112331684B (zh) * 2020-11-20 2024-02-09 联合微电子中心有限责任公司 图像传感器及其形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101152389B1 (ko) * 2007-09-13 2012-06-05 삼성전자주식회사 이미지 센서와 그 제조 방법
JP5422889B2 (ja) 2007-12-27 2014-02-19 株式会社ニコン 固体撮像素子及びこれを用いた撮像装置
JP2010182765A (ja) 2009-02-04 2010-08-19 Sony Corp 固体撮像装置および電子機器
JP5644057B2 (ja) * 2009-03-12 2014-12-24 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP5812610B2 (ja) * 2011-01-18 2015-11-17 キヤノン株式会社 固体撮像素子及び固体撮像素子を有する撮像システム
JP5737971B2 (ja) * 2011-01-28 2015-06-17 キヤノン株式会社 固体撮像装置およびカメラ
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
JP2012186271A (ja) * 2011-03-04 2012-09-27 Panasonic Corp 固体撮像装置とその製造方法、および撮像モジュール
JP5895355B2 (ja) * 2011-04-25 2016-03-30 株式会社ニコン 撮像装置
JP5955000B2 (ja) * 2012-01-25 2016-07-20 キヤノン株式会社 固体撮像素子、該固体撮像素子を備えた距離検出装置、及びカメラ
US9568606B2 (en) * 2012-03-29 2017-02-14 Canon Kabushiki Kaisha Imaging apparatus for distance detection using high and low sensitivity sensors with inverted positional relations

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11435616B2 (en) 2009-04-15 2022-09-06 3M Innovative Properties Company Optical construction and display system incorporating same
US10132969B2 (en) 2010-04-15 2018-11-20 3M Innovative Properties Company Retroreflective articles including optically active areas and optically inactive areas
US10379271B2 (en) 2010-04-15 2019-08-13 3M Innovative Properties Company Retroreflective articles including optically active areas and optically inactive areas
US10557976B2 (en) 2010-04-15 2020-02-11 3M Innovative Properties Company Retroreflective articles including optically active areas and optically inactive areas
US10859738B2 (en) 2010-04-15 2020-12-08 3M Innovative Properties Company Retroreflective articles including optically active areas and optically inactive areas

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Publication number Publication date
US20150228687A1 (en) 2015-08-13
JP2015152739A (ja) 2015-08-24
US9443891B2 (en) 2016-09-13

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