JP6332980B2 - 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 - Google Patents

光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 Download PDF

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Publication number
JP6332980B2
JP6332980B2 JP2014012784A JP2014012784A JP6332980B2 JP 6332980 B2 JP6332980 B2 JP 6332980B2 JP 2014012784 A JP2014012784 A JP 2014012784A JP 2014012784 A JP2014012784 A JP 2014012784A JP 6332980 B2 JP6332980 B2 JP 6332980B2
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semiconductor layer
photoconductive element
gaas
element according
substrate
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JP2014197669A (ja
JP2014197669A5 (https=
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佐藤　崇広
崇広 佐藤
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Canon Inc
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Canon Inc
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Priority to US14/199,870 priority patent/US20140252379A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H01Q9/285—Planar dipole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Recrystallisation Techniques (AREA)
JP2014012784A 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 Active JP6332980B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014012784A JP6332980B2 (ja) 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置
US14/199,870 US20140252379A1 (en) 2013-03-08 2014-03-06 Photoconductive antennas, method for producing photoconductive antennas, and terahertz time domain spectroscopy system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013046576 2013-03-08
JP2013046576 2013-03-08
JP2014012784A JP6332980B2 (ja) 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置

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JP2014197669A JP2014197669A (ja) 2014-10-16
JP2014197669A5 JP2014197669A5 (https=) 2017-03-02
JP6332980B2 true JP6332980B2 (ja) 2018-05-30

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Publication number Priority date Publication date Assignee Title
GB2546654B (en) * 2014-10-30 2021-06-02 Mitsubishi Electric Corp Array antenna apparatus and method for manufacturing the same
CN104576785B (zh) * 2014-12-04 2016-08-17 中国科学院上海微系统与信息技术研究所 一种用于高In组分InGaAs探测器的突变弛豫缓冲层
EP3035394A1 (en) 2014-12-17 2016-06-22 Centre National de la Recherche Scientifique Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system
JP2017045802A (ja) * 2015-08-25 2017-03-02 キヤノン株式会社 光伝導素子
JP2017156213A (ja) * 2016-03-02 2017-09-07 パイオニア株式会社 電磁波計測装置
US11469509B2 (en) 2016-09-07 2022-10-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Terahertz transceivers
RU2624612C1 (ru) * 2016-10-07 2017-07-04 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Полупроводниковая структура для фотопроводящих антенн
JP6942006B2 (ja) * 2017-08-25 2021-09-29 パイオニア株式会社 電磁波計測装置
JP6397553B1 (ja) * 2017-10-25 2018-09-26 東芝機械株式会社 転写装置
CN109001834A (zh) * 2018-06-22 2018-12-14 天和防务技术（北京）有限公司 一种基于主动式太赫兹安检方法

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JPS61141116A (ja) * 1984-12-13 1986-06-28 Seiko Epson Corp 半導体基板
WO2003047036A1 (en) * 2001-11-29 2003-06-05 Picometrix, Inc. Amplified photoconductive gate
GB2393037B (en) * 2002-09-11 2007-05-23 Tera View Ltd Method of enhancing the photoconductive properties of a semiconductor and method of producing a seminconductor with enhanced photoconductive properties
US8529698B2 (en) * 2008-11-11 2013-09-10 Arizona Board Of Regents For And On Behalf Of Arizona State University Ingan columnar nano-heterostructures for solar cells
JP2010225981A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光半導体素子、集積素子、光半導体素子の製造方法
JP6062640B2 (ja) * 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
WO2013033671A1 (en) * 2011-09-02 2013-03-07 Amberwave, Inc. Solar cell
WO2013074530A2 (en) * 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells

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US20140252379A1 (en) 2014-09-11

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