JP6329054B2 - スイッチング回路 - Google Patents
スイッチング回路 Download PDFInfo
- Publication number
- JP6329054B2 JP6329054B2 JP2014209138A JP2014209138A JP6329054B2 JP 6329054 B2 JP6329054 B2 JP 6329054B2 JP 2014209138 A JP2014209138 A JP 2014209138A JP 2014209138 A JP2014209138 A JP 2014209138A JP 6329054 B2 JP6329054 B2 JP 6329054B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- mosfet
- gate
- main
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 15
- 210000000746 body region Anatomy 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 108091006146 Channels Proteins 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
本明細書または図面に説明した技術要素は、単独あるいは各種の組み合わせによって技術有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの1つの目的を達成すること自体で技術有用性を持つものである。
12:メインMOSFET
14:制御MOSFET
16:ダイオード
20:高電位配線
22:低電位配線
24:信号配線
26:マイナス配線
Claims (2)
- スイッチング回路であって、
チャネル型が第1導電型であり、SiC半導体層に形成されているメインMOSFETと、
チャネル型が第2導電型であり、ソースが前記メインMOSFETのゲートに接続されている制御MOSFETと、
前記メインMOSFETと前記制御MOSFETのうちのチャネル型がn型である方のMOSFETのゲートにカソードが接続されており、前記メインMOSFETと前記制御MOSFETのうちのチャネル型がp型である方のMOSFETのゲートにアノードが接続されているダイオード、
を有するスイッチング回路。 - 前記制御MOSFETが、シリコン半導体層に形成されている請求項1のスイッチング回路。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014209138A JP6329054B2 (ja) | 2014-10-10 | 2014-10-10 | スイッチング回路 |
US15/508,219 US20170264282A1 (en) | 2014-10-10 | 2015-08-21 | Switching circuit |
PCT/JP2015/004224 WO2016056164A1 (en) | 2014-10-10 | 2015-08-21 | Switching circuit |
DE112015004648.8T DE112015004648T5 (de) | 2014-10-10 | 2015-08-21 | Schaltkreis |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014209138A JP6329054B2 (ja) | 2014-10-10 | 2014-10-10 | スイッチング回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016081963A JP2016081963A (ja) | 2016-05-16 |
JP6329054B2 true JP6329054B2 (ja) | 2018-05-23 |
Family
ID=54064542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014209138A Active JP6329054B2 (ja) | 2014-10-10 | 2014-10-10 | スイッチング回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170264282A1 (ja) |
JP (1) | JP6329054B2 (ja) |
DE (1) | DE112015004648T5 (ja) |
WO (1) | WO2016056164A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI20160183L (fi) * | 2016-07-14 | 2016-07-15 | Artto Mikael Aurola | Parannettu puolijohdekokoonpano |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4837414Y1 (ja) * | 1969-02-03 | 1973-11-07 | ||
US3777216A (en) * | 1972-10-02 | 1973-12-04 | Motorola Inc | Avalanche injection input protection circuit |
US4492883A (en) * | 1982-06-21 | 1985-01-08 | Eaton Corporation | Unpowered fast gate turn-off FET |
US4853563A (en) * | 1987-04-10 | 1989-08-01 | Siliconix Incorporated | Switch interface circuit for power mosfet gate drive control |
JP3180409B2 (ja) * | 1992-02-24 | 2001-06-25 | 日産自動車株式会社 | 半導体装置 |
JPH06244413A (ja) * | 1993-02-22 | 1994-09-02 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
JP3751796B2 (ja) * | 2000-06-02 | 2006-03-01 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
ATE520186T1 (de) * | 2001-03-16 | 2011-08-15 | Sofics Bvba | Strukturen zum schutz vor elektrostatischen entladungen für schnelle technologien mit gemischten und ultraniedrigen spannungsversorgungen |
US7282739B2 (en) * | 2002-04-26 | 2007-10-16 | Nissan Motor Co., Ltd. | Silicon carbide semiconductor device |
JP5560519B2 (ja) * | 2006-04-11 | 2014-07-30 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
WO2009121775A2 (de) * | 2008-04-01 | 2009-10-08 | Bauhaus-Universität Weimar | Verfahren und beleuchtungsvorrichtung zur optischen kontrastverstärkung |
JP2011165749A (ja) * | 2010-02-05 | 2011-08-25 | Panasonic Corp | 半導体装置 |
JP5961865B2 (ja) * | 2010-09-15 | 2016-08-02 | ローム株式会社 | 半導体素子 |
US9453886B2 (en) * | 2011-04-21 | 2016-09-27 | Renesas Electronics Corporation | Switch circuit, selection circuit, and voltage measurement device |
KR101926607B1 (ko) * | 2012-09-28 | 2018-12-07 | 삼성전자 주식회사 | 클램핑 회로, 이를 포함하는 반도체 장치 및 반도체 장치의 클램핑 방법 |
-
2014
- 2014-10-10 JP JP2014209138A patent/JP6329054B2/ja active Active
-
2015
- 2015-08-21 WO PCT/JP2015/004224 patent/WO2016056164A1/en active Application Filing
- 2015-08-21 US US15/508,219 patent/US20170264282A1/en not_active Abandoned
- 2015-08-21 DE DE112015004648.8T patent/DE112015004648T5/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US20170264282A1 (en) | 2017-09-14 |
JP2016081963A (ja) | 2016-05-16 |
WO2016056164A1 (en) | 2016-04-14 |
DE112015004648T5 (de) | 2017-07-06 |
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