JP6328131B2 - 容量性マイクロマシントランスデューサ及びその製造方法 - Google Patents
容量性マイクロマシントランスデューサ及びその製造方法 Download PDFInfo
- Publication number
- JP6328131B2 JP6328131B2 JP2015542385A JP2015542385A JP6328131B2 JP 6328131 B2 JP6328131 B2 JP 6328131B2 JP 2015542385 A JP2015542385 A JP 2015542385A JP 2015542385 A JP2015542385 A JP 2015542385A JP 6328131 B2 JP6328131 B2 JP 6328131B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- dielectric
- cmut
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 238000000034 method Methods 0.000 claims description 99
- 238000000231 atomic layer deposition Methods 0.000 claims description 85
- 238000000059 patterning Methods 0.000 claims description 75
- 238000005530 etching Methods 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 22
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims description 3
- 241000877463 Lanio Species 0.000 claims description 3
- 229910004121 SrRuO Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 468
- 239000010408 film Substances 0.000 description 98
- 238000012545 processing Methods 0.000 description 29
- 230000008569 process Effects 0.000 description 20
- 239000002346 layers by function Substances 0.000 description 18
- 230000008021 deposition Effects 0.000 description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 16
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 238000009413 insulation Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002604 ultrasonography Methods 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 101100163897 Caenorhabditis elegans asic-2 gene Proteins 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- OWJUDUZMAXZIOA-UHFFFAOYSA-N dialuminum hafnium(4+) oxygen(2-) Chemical compound [O--].[O--].[O--].[Al+3].[Al+3].[Hf+4] OWJUDUZMAXZIOA-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 silicon nitride) Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/18—Methods or devices for transmitting, conducting or directing sound
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Multimedia (AREA)
- Micromachines (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261728339P | 2012-11-20 | 2012-11-20 | |
| US61/728,339 | 2012-11-20 | ||
| PCT/IB2013/059932 WO2014080310A2 (en) | 2012-11-20 | 2013-11-06 | Capacitive micro-machined transducer and method of manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015536622A JP2015536622A (ja) | 2015-12-21 |
| JP2015536622A5 JP2015536622A5 (enExample) | 2016-12-22 |
| JP6328131B2 true JP6328131B2 (ja) | 2018-05-23 |
Family
ID=49596362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015542385A Expired - Fee Related JP6328131B2 (ja) | 2012-11-20 | 2013-11-06 | 容量性マイクロマシントランスデューサ及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9607606B2 (enExample) |
| EP (1) | EP2922707B1 (enExample) |
| JP (1) | JP6328131B2 (enExample) |
| CN (1) | CN104812504B (enExample) |
| WO (1) | WO2014080310A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6069798B2 (ja) | 2011-12-20 | 2017-02-01 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 超音波トランスデューサデバイス及びこれを製造する方法 |
| CN105592940B (zh) * | 2013-09-24 | 2018-09-25 | 皇家飞利浦有限公司 | Cmut装置制造方法、cmut装置和设备 |
| DE102015102300A1 (de) * | 2015-02-18 | 2016-08-18 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektronischen Bauelements |
| US9957393B2 (en) | 2015-03-30 | 2018-05-01 | Enzo Biochem, Inc. | Monoazo dyes with cyclic amine as fluorescence quenchers |
| WO2019213388A1 (en) * | 2018-05-03 | 2019-11-07 | Butterfly Network, Inc. | Pressure port for ultrasonic transducer on cmos sensor |
| CN114302774B (zh) * | 2019-08-30 | 2023-05-23 | 维蒙股份公司 | Cmut换能器 |
| US20210403321A1 (en) * | 2020-06-30 | 2021-12-30 | Butterfly Network, Inc. | Formation of self-assembled monolayer for ultrasonic transducers |
| CN115367694B (zh) * | 2022-08-15 | 2025-07-18 | 瑞声声学科技(深圳)有限公司 | 一种mems器件的制造方法及mems器件 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007528153A (ja) * | 2004-02-06 | 2007-10-04 | ジョージア テック リサーチ コーポレイション | Ｃｍｕｔデバイス及び製造方法 |
| EP1883956A4 (en) * | 2005-05-18 | 2011-03-23 | Kolo Technologies Inc | BY-THE-WAFER CONNECTION |
| JP4724505B2 (ja) * | 2005-09-09 | 2011-07-13 | 株式会社日立製作所 | 超音波探触子およびその製造方法 |
| EP1914800A1 (en) * | 2006-10-20 | 2008-04-23 | Interuniversitair Microelektronica Centrum | Method of manufacturing a semiconductor device with multiple dielectrics |
| US7733552B2 (en) * | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
| US7892176B2 (en) * | 2007-05-02 | 2011-02-22 | General Electric Company | Monitoring or imaging system with interconnect structure for large area sensor array |
| US20090275198A1 (en) * | 2008-05-01 | 2009-11-05 | Smuruthi Kamepalli | Vapor Phase Methods for Forming Electrodes in Phase Change Memory Devices |
| US9132693B2 (en) | 2008-09-16 | 2015-09-15 | Koninklijke Philps N.V. | Capacitive micromachine ultrasound transducer |
| JP2011023658A (ja) * | 2009-07-17 | 2011-02-03 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法 |
| US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| WO2011142850A2 (en) * | 2010-01-22 | 2011-11-17 | The Regents Of The University Of California | Etchant-free methods of producing a gap between two layers, and devices produced thereby |
| JP2012080095A (ja) * | 2010-09-10 | 2012-04-19 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| JP5677016B2 (ja) * | 2010-10-15 | 2015-02-25 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
-
2013
- 2013-11-06 CN CN201380060566.7A patent/CN104812504B/zh active Active
- 2013-11-06 WO PCT/IB2013/059932 patent/WO2014080310A2/en not_active Ceased
- 2013-11-06 EP EP13792500.4A patent/EP2922707B1/en active Active
- 2013-11-06 US US14/443,159 patent/US9607606B2/en active Active
- 2013-11-06 JP JP2015542385A patent/JP6328131B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN104812504A (zh) | 2015-07-29 |
| JP2015536622A (ja) | 2015-12-21 |
| WO2014080310A3 (en) | 2014-11-27 |
| WO2014080310A2 (en) | 2014-05-30 |
| US9607606B2 (en) | 2017-03-28 |
| EP2922707A2 (en) | 2015-09-30 |
| EP2922707B1 (en) | 2022-04-27 |
| US20150294663A1 (en) | 2015-10-15 |
| CN104812504B (zh) | 2018-01-26 |
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