CN104812504B - 电容性微加工换能器和制造所述电容性微加工换能器的方法 - Google Patents

电容性微加工换能器和制造所述电容性微加工换能器的方法 Download PDF

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Publication number
CN104812504B
CN104812504B CN201380060566.7A CN201380060566A CN104812504B CN 104812504 B CN104812504 B CN 104812504B CN 201380060566 A CN201380060566 A CN 201380060566A CN 104812504 B CN104812504 B CN 104812504B
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CN
China
Prior art keywords
layer
dielectric
deposited
dielectric film
cavity
Prior art date
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Application number
CN201380060566.7A
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English (en)
Chinese (zh)
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CN104812504A (zh
Inventor
J·H·克鲁特威克
M·米尔德
N·M·A·德维尔德
K·卡拉卡亚
C·A·范登赫费尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
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Publication of CN104812504A publication Critical patent/CN104812504A/zh
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Classifications

    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/18—Methods or devices for transmitting, conducting or directing sound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Micromachines (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
CN201380060566.7A 2012-11-20 2013-11-06 电容性微加工换能器和制造所述电容性微加工换能器的方法 Active CN104812504B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261728339P 2012-11-20 2012-11-20
US61/728,339 2012-11-20
PCT/IB2013/059932 WO2014080310A2 (en) 2012-11-20 2013-11-06 Capacitive micro-machined transducer and method of manufacturing the same

Publications (2)

Publication Number Publication Date
CN104812504A CN104812504A (zh) 2015-07-29
CN104812504B true CN104812504B (zh) 2018-01-26

Family

ID=49596362

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380060566.7A Active CN104812504B (zh) 2012-11-20 2013-11-06 电容性微加工换能器和制造所述电容性微加工换能器的方法

Country Status (5)

Country Link
US (1) US9607606B2 (enExample)
EP (1) EP2922707B1 (enExample)
JP (1) JP6328131B2 (enExample)
CN (1) CN104812504B (enExample)
WO (1) WO2014080310A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112014014911A2 (pt) * 2011-12-20 2017-06-13 Koninklijke Philips Nv dispositivo transdutor de ultrassom; e método de fabricação de um dispositivo transdutor de ultrassom
US10293375B2 (en) * 2013-09-24 2019-05-21 Koninklijke Philips N.V. CMUT device manufacturing method, CMUT device and apparatus
DE102015102300A1 (de) * 2015-02-18 2016-08-18 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektronischen Bauelements
US9957393B2 (en) 2015-03-30 2018-05-01 Enzo Biochem, Inc. Monoazo dyes with cyclic amine as fluorescence quenchers
JP2021522734A (ja) * 2018-05-03 2021-08-30 バタフライ ネットワーク，インコーポレイテッド Ｃｍｏｓセンサ上の超音波トランスデューサ用の圧力ポート
EP4021649A1 (en) * 2019-08-30 2022-07-06 Vermon S.A. Cmut transducer
WO2022006099A1 (en) * 2020-06-30 2022-01-06 Bfly Operations, Inc. Formation of self-assembled monolayer for ultrasonic transducers
CN115367694B (zh) * 2022-08-15 2025-07-18 瑞声声学科技(深圳)有限公司 一种mems器件的制造方法及mems器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578686A (zh) * 2005-05-18 2009-11-11 科隆科技公司 微机电装置的制造方法
CN102159334A (zh) * 2008-09-16 2011-08-17 皇家飞利浦电子股份有限公司 电容性微机械加工的超声换能器
WO2011142850A2 (en) * 2010-01-22 2011-11-17 The Regents Of The University Of California Etchant-free methods of producing a gap between two layers, and devices produced thereby

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Publication number Priority date Publication date Assignee Title
WO2005077012A2 (en) * 2004-02-06 2005-08-25 Georgia Tech Research Corporation Cmut devices and fabrication methods
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
EP1914800A1 (en) * 2006-10-20 2008-04-23 Interuniversitair Microelektronica Centrum Method of manufacturing a semiconductor device with multiple dielectrics
US7733552B2 (en) * 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7892176B2 (en) * 2007-05-02 2011-02-22 General Electric Company Monitoring or imaging system with interconnect structure for large area sensor array
US20090275198A1 (en) * 2008-05-01 2009-11-05 Smuruthi Kamepalli Vapor Phase Methods for Forming Electrodes in Phase Change Memory Devices
JP2011023658A (ja) * 2009-07-17 2011-02-03 Fuji Electric Systems Co Ltd 半導体装置の製造方法
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP2012080095A (ja) * 2010-09-10 2012-04-19 Elpida Memory Inc 半導体装置及びその製造方法
JP5677016B2 (ja) * 2010-10-15 2015-02-25 キヤノン株式会社 電気機械変換装置及びその作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578686A (zh) * 2005-05-18 2009-11-11 科隆科技公司 微机电装置的制造方法
CN102159334A (zh) * 2008-09-16 2011-08-17 皇家飞利浦电子股份有限公司 电容性微机械加工的超声换能器
WO2011142850A2 (en) * 2010-01-22 2011-11-17 The Regents Of The University Of California Etchant-free methods of producing a gap between two layers, and devices produced thereby

Also Published As

Publication number Publication date
CN104812504A (zh) 2015-07-29
EP2922707B1 (en) 2022-04-27
WO2014080310A3 (en) 2014-11-27
JP2015536622A (ja) 2015-12-21
EP2922707A2 (en) 2015-09-30
JP6328131B2 (ja) 2018-05-23
WO2014080310A2 (en) 2014-05-30
US20150294663A1 (en) 2015-10-15
US9607606B2 (en) 2017-03-28

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