JP6325620B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6325620B2 JP6325620B2 JP2016185520A JP2016185520A JP6325620B2 JP 6325620 B2 JP6325620 B2 JP 6325620B2 JP 2016185520 A JP2016185520 A JP 2016185520A JP 2016185520 A JP2016185520 A JP 2016185520A JP 6325620 B2 JP6325620 B2 JP 6325620B2
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- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Description
12 基板
12A 前面
12B 背面
14 グリッド
16 カラーフィルター
18 プラズマ強化酸化層(PEOx)
20 反射防止膜(ARC)
22 裏面照射(BSI)膜
24 第1の誘電体層
26 シャロートレンチアイソレーション(STI)領域
28 炭化ケイ素層
28A 上側炭化ケイ素層
28B 下側炭化ケイ素層
30 メタライズ層
32 第2の誘電体層
34 上側金属
36 非ドープの珪酸ガラス(USG)層
38 金属
40 グリッドの壁
42 キャビティ
44 画素領域
46 フォトダイオード
48 カラーフィルターの上表面
50 グリッドの壁の上表面
52 方法
54 グリッド層
56 フォトレジスト
58 マイクロレンズ
60 アレイ
62 黒レベル補正(BLC)コンポーネンツ
64 ボンディングパッド
Claims (10)
- フォトダイオードが組み込まれた画素領域およびボンディングパッド構造の上に垂直に整列されたボンディングパッド領域を有する基板であって前記基板の前記ボンディングパッド領域がシャロートレンチアイソレーション(STI)を有している基板と、
前記基板の前記フォトダイオードの受光側に設けられ、キャビティが区画される壁を有し、前記キャビティが前記基板に垂直な方向に前記画素領域と整列して並べられるグリッドと、
前記グリッドの前記壁間の前記キャビティ中に設けられるカラーフィルターと、
前記基板の前記フォトダイオードの前記受光側と反対側の上方で前記画素領域から前記ボンディングパッド領域に連続的に延びている上側金属
とを含むことを特徴とする半導体装置。 - 前記グリッドは、金属または低屈折率材料で形成されていることを特徴とする請求項1記載の半導体装置。
- 前記グリッドが、タングステン、アルミニウムおよび銅のいずれか一つからなる金属、または、低屈折率材料の酸化物で形成されていることを特徴とする請求項2記載の半導体装置。
- 前記グリッドは、裏面照射膜上に設けられることを特徴とする請求項1記載の半導体装置。
- マイクロレンズが、前記カラーフィルターの上表面および前記カラーフィルターに隣接する前記グリッドの前記壁の上表面に設けられることを特徴とする請求項1記載の半導体装置。
- フォトダイオードがそれぞれ組み込まれた複数の画素領域およびボンディングパッド構造の上に垂直に整列されたボンディングパッド領域を有する基板であって前記基板の前記ボンディングパッド領域がシャロートレンチアイソレーション(STI)を有している基板と、
前記基板の前記フォトダイオードの受光側に設けられ、複数のキャビティが区画される壁を有し、前記複数のキャビティのそれぞれが、前記基板に垂直な方向に前記複数の画素領域のひとつと整列して並べられるグリッドと、
前記複数のキャビティのそれぞれに設けられるカラーフィルターと、
各カラーフィルター上に設けられるマイクロレンズと、
前記基板の前記フォトダイオードの前記受光側と反対側の上方で前記画素領域から前記ボンディングパッド領域に連続的に延びている上側金属
とを含むことを特徴とする半導体装置。 - 前記グリッドは、金属または低屈折率誘電材料により形成されることを特徴とする請求項6記載の半導体装置。
- 前記カラーフィルターの上表面は、前記カラーフィルターに隣接する前記グリッドの前記壁の上表面と共平面であることを特徴とする請求項6記載の半導体装置。
- フォトダイオードがそれぞれ組み込まれた複数の画素領域およびボンディングパッド構造の上に垂直に整列されたボンディングパッド領域を有する基板であって前記基板の前記ボンディングパッド領域がシャロートレンチアイソレーション(STI)を有している基板と、
前記基板上に設けられ、プラズマ強化酸化層および反射防止膜を含む裏面照射膜と、
前記裏面照射膜上に設けられ、複数のキャビティが区画される壁を有し、前記複数のキャビティのそれぞれが、前記基板に垂直な方向に前記複数の画素領域のひとつと整列して並べられるグリッドと、
前記複数のキャビティのそれぞれに設けられるカラーフィルターと、
各カラーフィルター上に設けられるマイクロレンズと、
前記基板の下方で前記画素領域から前記ボンディングパッド領域に連続的に延びている上側金属
とを含むことを特徴とする半導体装置。 - 前記基板は、さらに、隣接した黒レベル補正領域(BLC)を含んでいる請求項9記載の半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/476,785 US9455288B2 (en) | 2012-05-21 | 2012-05-21 | Image sensor structure to reduce cross-talk and improve quantum efficiency |
US13/476,785 | 2012-05-21 |
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JP2013106163A Division JP2013243364A (ja) | 2012-05-21 | 2013-05-20 | 半導体装置およびその製造方法 |
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JP2016225660A JP2016225660A (ja) | 2016-12-28 |
JP6325620B2 true JP6325620B2 (ja) | 2018-05-16 |
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JP2016185520A Active JP6325620B2 (ja) | 2012-05-21 | 2016-09-23 | 半導体装置およびその製造方法 |
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US (1) | US9455288B2 (ja) |
JP (2) | JP2013243364A (ja) |
CN (2) | CN107482028B (ja) |
TW (1) | TWI520317B (ja) |
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2012
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- 2012-08-27 CN CN201710859812.5A patent/CN107482028B/zh active Active
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